By Mr Matthew John Rendell

Journal articles

Sarkar A; Wang Z; Rendell M; Hendrickx NW; Veldhorst M; Scappucci G; Khalifa M; Salfi J; Saraiva A; Dzurak AS; Hamilton AR; Culcer D, 2023, 'Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field', Physical Review B, 108, http://dx.doi.org/10.1103/PhysRevB.108.245301

Jin IK; Kumar K; Rendell MJ; Huang JY; Escott CC; Hudson FE; Lim WH; Dzurak AS; Hamilton AR; Liles SD, 2023, 'Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform', Nano Letters, 23, pp. 1261 - 1266, http://dx.doi.org/10.1021/acs.nanolett.2c04417

Rendell MJ; Liles SD; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Hamilton AR, 2023, 'Spin polarization and spin-dependent scattering of holes observed in transverse magnetic focusing', Physical Review B, 107, http://dx.doi.org/10.1103/PhysRevB.107.045304

Rendell MJ; Liles SD; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Hamilton AR, 2022, 'Gate voltage dependent Rashba spin splitting in hole transverse magnetic focusing', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.245305

Lodari M; Kong O; Rendell M; Tosato A; Sammak A; Veldhorst M; Hamilton AR; Scappucci G, 2022, 'Lightly strained germanium quantum wells with hole mobility exceeding one million', Applied Physics Letters, 120, http://dx.doi.org/10.1063/5.0083161

Liles SD; Martins F; Miserev DS; Kiselev AA; Thorvaldson ID; Rendell MJ; Jin IK; Hudson FE; Veldhorst M; Itoh KM; Sushkov OP; Ladd TD; Dzurak AS; Hamilton AR, 2021, 'Electrical control of the g tensor of the first hole in a silicon MOS quantum dot', Physical Review B, 104, http://dx.doi.org/10.1103/PhysRevB.104.235303

Rendell M; Klochan O; Srinivasan A; Farrer I; Ritchie DA; Hamilton AR, 2015, 'Transverse magnetic focussing of heavy holes in a (100) GaAs quantum well', Semiconductor Science and Technology, 30, http://dx.doi.org/10.1088/0268-1242/30/10/102001

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