By Mr Matthew John Rendell

Preprints

Liles S; Halverson D; Wang Z; Shamim A; Eggli R; Jin IK; Hillier J; Kumar K; Vorreiter I; Rendell M; Huang JY; Escott C; Hudson F; Lim WH; Culcer D; Dzurak A; Hamilton A, 2024, A singlet-triplet hole-spin qubit in MOS silicon, http://dx.doi.org/10.21203/rs.3.rs-3603337/v1

Liles SD; Halverson DJ; Wang Z; Shamim A; Eggli RS; Jin IK; Hillier J; Kumar K; Vorreiter I; Rendell M; Huang JH; Escott CC; Hudson FE; Lim WH; Culcer D; Dzurak AS; Hamilton AR, 2023, A singlet-triplet hole-spin qubit in MOS silicon, http://dx.doi.org/10.1038/s41467-024-51902-9

Rendell MJ; Liles SD; Bladwell S; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Sushkov OP; Hamilton AR, 2023, Probing Fermi surface parity with spin resolved transverse magnetic focussing, http://arxiv.org/abs/2310.04005v2

Jin IK; Kumar K; Rendell MJ; Huang JY; Escott CC; Hudson FE; Lim WH; Dzurak AS; Hamilton AR; Liles SD, 2022, Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform, http://dx.doi.org/10.1021/acs.nanolett.2c04417

Rendell MJ; Liles SD; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Hamilton AR, 2022, Spin polarisation and spin dependent scattering of holes in transverse magnetic focussing, http://dx.doi.org/10.1103/PhysRevB.107.045304

Rendell MJ; Liles SD; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Hamilton AR, 2022, Gate voltage dependent Rashba spin splitting in hole transverse magnetic focussing, http://dx.doi.org/10.1103/PhysRevB.105.245305

Lodari M; Kong O; Rendell M; Tosato A; Sammak A; Veldhorst M; Hamilton AR; Scappucci G, 2021, Lightly-strained germanium quantum wells with hole mobility exceeding one million, http://dx.doi.org/10.48550/arxiv.2112.11860

Liles SD; Martins F; Miserev DS; Kiselev AA; Thorvaldson ID; Rendell MJ; Jin IK; Hudson FE; Veldhorst M; Itoh KM; Sushkov OP; Ladd TD; Dzurak AS; Hamilton AR, 2020, Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot, http://dx.doi.org/10.1103/PhysRevB.104.235303

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