Select Publications

Journal articles

Ali M; Nurdin H; Fletcher JE, 2021, 'Dispatchable Virtual Oscillator Control for Single-Phase Islanded Inverters: Analysis and Experiments', IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, vol. 68, pp. 4812 - 4826, http://dx.doi.org/10.1109/TIE.2020.2991996

Ali M; Nurdin HI; Fletcher JE, 2021, 'Dispatchable Virtual Oscillator Control for Single-Phase Islanded Inverters: Analysis and Experiments', IEEE Transactions on Industrial Electronics, vol. 68, pp. 4812 - 4826, http://dx.doi.org/10.1109/TIE.2020.2991996

Ali M; Nurdin HI; Fletcher JE, 2020, 'Synthesizing Averaged Virtual Oscillator Dynamics to Control Inverters with an Output LCL Filter', IECON Proceedings (Industrial Electronics Conference), vol. 2020-October, pp. 3265 - 3270, http://dx.doi.org/10.1109/IECON43393.2020.9254592

Ali M; Li J; Callegaro L; Nurdin HI; Fletcher JE, 2020, 'Regulation of active and reactive power of a virtual oscillator controlled inverter', IET Generation, Transmission and Distribution, vol. 14, pp. 62 - 69, http://dx.doi.org/10.1049/iet-gtd.2018.5752

Conference Papers

Ali M; Sahoo A; Nurdin HI; Ravishankar J; Fletcher JE, 2019, 'On the Power Sharing Dynamics of Parallel-Connected Virtual Oscillator-Controlled and Droop-Controlled Inverters in an AC Microgrid', in IECON Proceedings (Industrial Electronics Conference), pp. 3931 - 3936, http://dx.doi.org/10.1109/IECON.2019.8927510

Ali M; Nurdin HI; Fletcher JE, 2018, 'Simultaneous regulation of active and reactive output power of parallel-connected virtual oscillator controlled inverters', in Proceedings: IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society, pp. 4051 - 4056, http://dx.doi.org/10.1109/IECON.2018.8592839

Ali M; Nurdin HI; Fletcher JE, 2018, 'Output Power Regulation of a Virtual Oscillator Controlled Inverter', in Proceedings - 2018 IEEE 18th International Conference on Power Electronics and Motion Control, PEMC 2018, pp. 1085 - 1090, http://dx.doi.org/10.1109/EPEPEMC.2018.8521907

Ali M; Saeed J, 2016, 'A High Current Enhancement Type N-Channel InGaAs MOSFET on InP Substrate with A Maximum Drain Current of 1.3 A/mm', in Mustafa G; Gul ST; Nadeem S (eds.), 2016 INTERNATIONAL CONFERENCE ON EMERGING TECHNOLOGIES (ICET), IEEE, Islamabad, PAKISTAN, presented at International Conference on Emerging Technologies (ICET), Islamabad, PAKISTAN, 18 October 2016 - 19 October 2016, http://dx.doi.org/10.1109/icet.2016.7813206


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