Select Publications
Preprints
2023, Fabrication of electronically conductive protein-heme nanowires for power harvesting, http://dx.doi.org/10.48550/arxiv.2310.10042
,2023, The effect of direct electron beam patterning on the water uptake and ionic conductivity of Nafion thin films, http://dx.doi.org/10.1002/aelm.202300199
,2023, Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion, http://dx.doi.org/10.1039/d0mh01070g
,2023, Post-growth shaping and transport anisotropy in 2D InAs nanofins, http://dx.doi.org/10.1021/acsnano.1c00483
,2021, Prospects for single-molecule electrostatic detection in molecular motor gliding motility assays, http://dx.doi.org/10.1088/1367-2630/abfdf5
,2020, Impact of invasive metal probes on Hall measurements in semiconductor nanostructures, http://dx.doi.org/10.48550/arxiv.2010.09883
,2020, Flexible complementary logic circuit built from two identical organic electrochemical transistors, http://arxiv.org/abs/2006.15525v1
,2019, A parylene coating system specifically designed for producing ultra-thin films for nanoscale device applications, http://dx.doi.org/10.48550/arxiv.1909.05595
,2019, Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy, http://dx.doi.org/10.48550/arxiv.1907.00134
,2018, Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors, http://dx.doi.org/10.48550/arxiv.1810.03359
,2018, p-GaAs nanowire MESFETs with near-thermal limit gating, http://dx.doi.org/10.48550/arxiv.1809.10479
,2018, Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors, http://dx.doi.org/10.48550/arxiv.1809.10471
,2017, Near-thermal limit gating in heavily-doped III-V semiconductor nanowires using polymer electrolytes, http://dx.doi.org/10.48550/arxiv.1710.06950
,2017, The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors, http://dx.doi.org/10.48550/arxiv.1706.04826
,2017, Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry, http://dx.doi.org/10.48550/arxiv.1705.00611
,2017, Towards low-dimensional hole systems in Be-doped GaAs nanowires, http://dx.doi.org/10.48550/arxiv.1704.03957
,2015, InAs nanowire transistors with multiple, independent wrap-gate segments, http://dx.doi.org/10.48550/arxiv.1505.01689
,2014, Using polymer electrolyte gates to set-and-freeze threshold voltage and local potential in nanowire-based devices and thermoelectrics, http://dx.doi.org/10.48550/arxiv.1411.2727
,2014, Using light and heat to controllably switch and reset disorder configuration in nanoscale devices, http://dx.doi.org/10.48550/arxiv.1408.4845
,2014, Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors, http://dx.doi.org/10.48550/arxiv.1404.1975
,2014, Is thermal annealing a viable alternative for crystallization in triethylsilylethynyl anthradithiophene organic transistors?, http://dx.doi.org/10.48550/arxiv.1404.1632
,2013, Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor, http://dx.doi.org/10.48550/arxiv.1312.5410
,2013, Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot, http://dx.doi.org/10.48550/arxiv.1312.1754
,2013, A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor, http://dx.doi.org/10.48550/arxiv.1310.4889
,2013, Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors, http://dx.doi.org/10.48550/arxiv.1306.4394
,2013, Scaling of the Kondo zero bias peak in a hole quantum dot at finite temperatures, http://dx.doi.org/10.48550/arxiv.1305.1381
,2013, Using a tunable quantum wire to measure the large out-of-plane spin splitting of quasi two-dimensional holes in a GaAs nanostructure, http://dx.doi.org/10.48550/arxiv.1301.7493
,2012, The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices, http://dx.doi.org/10.48550/arxiv.1212.0930
,2012, Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devices, http://dx.doi.org/10.48550/arxiv.1208.4745
,2012, The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures, http://dx.doi.org/10.48550/arxiv.1207.2851
,2012, Is it the boundaries or disorder that dominates electron transport in semiconductor `billiards'?, http://dx.doi.org/10.48550/arxiv.1204.4882
,2012, Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure, http://dx.doi.org/10.48550/arxiv.1204.0827
,2012, The Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots, http://dx.doi.org/10.48550/arxiv.1204.0158
,2012, Realizing lateral wrap-gated nanowire FETs: Controlling gate length with chemistry rather than lithography, http://dx.doi.org/10.48550/arxiv.1201.3682
,2011, Tracking the energies of one-dimensional subband edges in quantum point contacts using dc conductance measurements, http://dx.doi.org/10.48550/arxiv.1110.3475
,2011, What lurks below the last plateau: Experimental studies of the 0.7 x 2e^2/h conductance anomaly in one-dimensional systems, http://dx.doi.org/10.48550/arxiv.1110.3474
,2011, Fabrication of undoped AlGaAs/GaAs electron quantum dots, http://dx.doi.org/10.48550/arxiv.1106.5847
,2011, Probing the Sensitivity of Electron Wave Interference to Disorder-Induced Scattering in Solid-State Devices, http://dx.doi.org/10.48550/arxiv.1106.5823
,2011, Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot, http://dx.doi.org/10.48550/arxiv.1103.0320
,2010, Origin of the hysteresis in bilayer 2D systems in the quantum Hall regime, http://dx.doi.org/10.48550/arxiv.1009.5468
,2010, Piezoelectric rotator for studying quantum effects in semiconductor nanostructures at high magnetic fields and low temperatures, http://dx.doi.org/10.48550/arxiv.1009.2573
,2010, Electrometry using the quantum Hall effect in a bilayer 2D electron system, http://dx.doi.org/10.48550/arxiv.1003.5017
,2010, AlGaAs/GaAs single electron transistors fabricated without modulation doping, http://dx.doi.org/10.48550/arxiv.1003.0240
,2010, Fabrication and characterization of an induced GaAs single hole transistor, http://dx.doi.org/10.48550/arxiv.1002.2998
,2009, Competition between Superconductivity and Weak Localization in Metal-Mixed Ion-Implanted Polymers, http://dx.doi.org/10.48550/arxiv.0910.4445
,2009, Observation of orientation- and $k$-dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures, http://dx.doi.org/10.48550/arxiv.0909.5295
,2009, The role of background impurities in the single particle relaxation lifetime of a two-dimensional electron gas, http://dx.doi.org/10.48550/arxiv.0906.4161
,2009, Ground-plane screening of Coulomb interactions in two-dimensional systems: How effectively can one two-dimensional system screen interactions in another?, http://dx.doi.org/10.48550/arxiv.0904.3786
,2008, Radio-frequency reflectometry on large gated 2-dimensional systems, http://dx.doi.org/10.48550/arxiv.0810.5184
,2008, Preparation of Metal Mixed Plastic Superconductors: Electrical Properties of Tin-Antimony Thin Films on Plastic Substrates, http://dx.doi.org/10.48550/arxiv.0809.4096
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