By Professor Bram Hoex

Journal articles

Heinrich M; Kluska S; Hameiri Z; Hoex B; Aberle AG, 2013, 'Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors', Applied Physics Letters, 103, pp. 262103, http://dx.doi.org/10.1063/1.4856796

Lin F; Hoex B; Koh YH; Lin J; Aberle AG, 2013, 'Low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide films', Ecs Journal of Solid State Science and Technology, 2, pp. N11 - N14, http://dx.doi.org/10.1149/2.026301jss

Liu L; Lin F; Heinrich M; Aberle AG; Hoex B, 2013, 'Unexpectedly high etching rate of highly doped n-type crystalline silicon in hydrofluoric acid', Ecs Journal of Solid State Science and Technology, 2, pp. P380 - P383, http://dx.doi.org/10.1149/2.026309jss

Hoex B; Bosman M; Nandakumar N; Kessels WMM, 2013, 'Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy', Physica Status Solidi Rapid Research Letters, 7, pp. 937 - 941, http://dx.doi.org/10.1002/pssr.201308081

Siah SC; Hoex B; Aberle AG, 2013, 'Accurate characterization of thin films on rough surfaces by spectroscopic ellipsometry', Thin Solid Films, 545, pp. 451 - 457, http://dx.doi.org/10.1016/j.tsf.2013.07.067

Liao B; Stangl R; Ma F; Mueller T; Lin F; Aberle AG; Bhatia CS; Hoex B, 2013, 'Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activation', Journal of Physics D Applied Physics, 46, http://dx.doi.org/10.1088/0022-3727/46/38/385102

Virasawmy S; Palina N; Widenborg PI; Kumar A; Dalapati GK; Tan HR; Tay AAO; Hoex B, 2013, 'Direct laser doping of poly-silicon thin films via laser chemical processing', IEEE Journal of Photovoltaics, 3, pp. 1259 - 1264, http://dx.doi.org/10.1109/JPHOTOV.2013.2278662

Law F; Yi Y; Hidayat ; Widenborg PI; Luther J; Hoex B, 2013, 'Identification of geometrically necessary dislocations in solid phase crystallized poly-Si', Journal of Applied Physics, 114, http://dx.doi.org/10.1063/1.4816563

Khanna A; Mueller T; Stangl RA; Hoex B; Basu PK; Aberle AG, 2013, 'A fill factor loss analysis method for silicon wafer solar cells', IEEE Journal of Photovoltaics, 3, pp. 1170 - 1177, http://dx.doi.org/10.1109/JPHOTOV.2013.2270348

Kumar A; Dalapati GK; Hidayat H; Law F; Tan HR; Widenborg PI; Hoex B; Tan CC; Chi DZ; Aberle AG, 2013, 'Integration of β-FeSi2 with poly-Si on glass for thin-film photovoltaic applications', Rsc Advances, 3, pp. 7733 - 7738, http://dx.doi.org/10.1039/c3ra41156g

Duttagupta S; Lin F; Shetty KD; Aberle AG; Hoex B, 2013, 'Excellent boron emitter passivation for high-efficiency Si wafer solar cells using AlOx/SiNx dielectric stacks deposited in an industrial inline plasma reactor', Progress in Photovoltaics Research and Applications, 21, pp. 760 - 764, http://dx.doi.org/10.1002/pip.1259

Law F; Widenborg PI; Luther J; Hoex B, 2013, 'Medium range order engineering in amorphous silicon thin films for solid phase crystallization', Journal of Applied Physics, 113, http://dx.doi.org/10.1063/1.4807166

Chen J; Tey ZHJ; Du ZR; Lin F; Hoex B; Aberle AG, 2013, 'Investigation of screen-printed rear contacts for aluminum local back surface field silicon wafer solar cells', IEEE Journal of Photovoltaics, 3, pp. 690 - 696, http://dx.doi.org/10.1109/JPHOTOV.2013.2239701

Law F; Hidayat H; Kumar A; Widenborg P; Luther J; Hoex B, 2013, 'On the transient amorphous silicon structures during solid phase crystallization', Journal of Non Crystalline Solids, 363, pp. 172 - 177, http://dx.doi.org/10.1016/j.jnoncrysol.2012.12.034

Liao B; Stangl R; Mueller T; Lin F; Bhatia CS; Hoex B, 2013, 'The effect of light soaking on crystalline silicon surface passivation by atomic layer deposited Al2O3', Journal of Applied Physics, 113, http://dx.doi.org/10.1063/1.4775595

Liao B; Stangl R; Ma F-J; Hameiri Z; Mueller T; Chi D; Aberle AG; Bhatia CS; Hoex B, 2013, 'Deposition temperature independent excellent passivation of highly boron doped silicon emitters by thermal atomic layer deposited Al2O3', Journal of Applied Physics, 114, pp. 094505, http://dx.doi.org/10.1063/1.4819970

Duttagupta S; Ma F-J; Lin SF; Mueller T; Aberle AG; Hoex B, 2013, 'Progress in Surface Passivation of Heavily Doped n-Type and p-Type Silicon by Plasma-Deposited AlOx/SiNx Dielectric Stacks', IEEE Journal of Photovoltaics, 3, pp. 1163 - 1169, http://dx.doi.org/10.1109/JPHOTOV.2013.2270350

Peloso MP; Palina N; Banas K; Banas A; Hidayat H; Hoex B; Breese MBH; Aberle AG, 2012, 'Investigation of defect luminescence from multicrystalline Si wafer solar cells using X-ray fluorescence and luminescence imaging', Physica Status Solidi Rapid Research Letters, 6, pp. 460 - 462, http://dx.doi.org/10.1002/pssr.201206412

Du ZR; Palina N; Chen J; Aberle AG; Hoex B; Hong MH, 2012, 'Enhancement of laser-induced rear surface spallation by pyramid textured structures on silicon wafer solar cells', Optics Express, 20, pp. A984 - A990, http://dx.doi.org/10.1364/OE.20.00A984

Du ZR; Palina N; Chen J; Aberle AG; Hoex B; Hong MH, 2012, 'Enhancement of laser-induced rear surface spallation by pyramid textured structures on silicon wafer solar cells.', Opt Express, 20, pp. A984 - A990, https://www.ncbi.nlm.nih.gov/pubmed/23326846

Lin F; Duttagupta S; Shetty KD; Boreland M; Aberle AG; Hoex B, 2012, 'Excellent Passivation of p + Silicon Surfaces by Inline Plasma Enhanced Chemical Vapor Deposited SiO x /AlO x Stacks', Japanese Journal of Applied Physics, 51, pp. 10na17, http://dx.doi.org/10.7567/jjap.51.10na17

Lin F; Duttagupta S; Shetty KD; Boreland M; Aberle AG; Hoex B, 2012, 'Excellent passivation of p + silicon surfaces by inline plasma enhanced chemical vapor deposited SiO x/AlO x stacks', Japanese Journal of Applied Physics, 51, http://dx.doi.org/10.1143/JJAP.51.10NA17

Ma FJ; Samudra GG; Peters M; Aberle AG; Werner F; Schmidt J; Hoex B, 2012, 'Advanced modeling of the effective minority carrier lifetime of passivated crystalline silicon wafers', Journal of Applied Physics, 112, pp. 054508, http://dx.doi.org/10.1063/1.4749572

Law F; Hoex B; Wang J; Luther J; Sharma K; Creatore M; Van De Sanden MCM, 2012, 'Kinetic study of solid phase crystallisation of expanding thermal plasma deposited a-Si:H', Thin Solid Films, 520, pp. 5820 - 5825, http://dx.doi.org/10.1016/j.tsf.2012.04.056

Basu PK; Shetty KD; Vinodh S; Sarangi D; Palina N; Duttagupta S; Lin F; Du Z; Chen J; Hoex B; Boreland MB; Aberle AG, 2012, '19% efficient inline-diffused large-area screen-printed Al-LBSF silicon wafer solar cells', Energy Procedia, 27, pp. 444 - 448, http://dx.doi.org/10.1016/j.egypro.2012.07.091

Aberle AG; Boreland MB; Hoex B; Mueller T, 2012, 'Review industrial silicon wafer solar cells-Status and trends', Green, 2, pp. 135 - 148, http://dx.doi.org/10.1515/green-2012-0007

Hoex B; van de Sanden MCM; Schmidt J; Brendel R; Kessels WMM, 2012, 'Surface passivation of phosphorus-diffused n +-type emitters by plasma-assisted atomic-layer deposited Al 2O 3', Physica Status Solidi Rapid Research Letters, 6, pp. 4 - 6, http://dx.doi.org/10.1002/pssr.201105445

Peters M; Ma F-J; Guo S; Hoex B; Blaesi B; Glunz S; Aberle A; Luther J, 2012, 'Advanced modelling of silicon wafer solar cells', Japanese Journal of Applied Physics, 51, http://dx.doi.org/10.1143/JJAP.51.10NA06

Peloso MP; Hoex B; Aberle AG, 2011, 'Polarization analysis of luminescence for the characterization of silicon wafer solar cells', Applied Physics Letters, 98, http://dx.doi.org/10.1063/1.3584857

Bock R; Schmidt J; Mau S; Hoex B; Brendel R, 2010, 'The ALU+ concept: N-type silicon solar cells with surface-passivated screen-printed aluminum-alloyed rear emitter', IEEE Transactions on Electron Devices, 57, pp. 1966 - 1971, http://dx.doi.org/10.1109/TED.2010.2050953

He S; Wong J; Inn D; Hoex B; Aberle AG; Sproul AB, 2010, 'Influences of oxygen contamination on evaporated poly-Si thin-film solar cells by solid-phase epitaxy', Thin Solid Films, 518, pp. 4351 - 4355, http://dx.doi.org/10.1016/j.tsf.2010.01.017

Dingemans G; Engelhart P; Seguin R; Einsele F; Hoex B; Van De Sanden MCM; Kessels WMM, 2009, 'Stability of Al2O3 and Al2O3/a- SiNx:H stacks for surface passivation of crystalline silicon', Journal of Applied Physics, 106, http://dx.doi.org/10.1063/1.3264572

Gielis JJH; Hoex B; van den Oever PJ; van de Sanden MCM; Kessels WMM, 2009, 'Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy', Thin Solid Films, 517, pp. 3456 - 3460, http://dx.doi.org/10.1016/j.tsf.2009.01.076

He S; Hoex B; Inns D; Brazil IC; Widenborg P; Aberle AG, 2009, 'Crystal quality improvement of solid-phase crystallized evaporated silicon films by in-situ densification anneal', Solar Energy Materials and Solar Cells, pp. 1116 - 1119

Hoex B; Gielis JJH; Van De Sanden MCM; Kessels WMM, 2008, 'On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2 O3', Journal of Applied Physics, 104, http://dx.doi.org/10.1063/1.3021091

Gielis JJH; Hoex B; Van De Sanden MCM; Kessels WMM, 2008, 'Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation', Journal of Applied Physics, 104, http://dx.doi.org/10.1063/1.2985906

Hoex B; Schmidt J; Pohl P; Van De Sanden MCM; Kessels WMM, 2008, 'Silicon surface passivation by atomic layer deposited Al2 O 3', Journal of Applied Physics, 104, http://dx.doi.org/10.1063/1.2963707

Schmidt J; Merkle A; Brendel R; Hoex B; Van De Sanden MCM; Kessels WMM, 2008, 'Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3', Progress in Photovoltaics Research and Applications, 16, pp. 461 - 466, http://dx.doi.org/10.1002/pip.823

Karouta F; Krämer M; Kwaspen JJ; Grzegorczyk A; Hageman P; Hoex B; Kessels WM; Klootwijk J; Timmering E; Smit M, 2008, 'Influence of the Structural and Compositional Properties of PECVD Silicon Nitride as a Passivation Layer for AlGaN HEMTs', ECS Meeting Abstracts, MA2008-02, pp. 2079 - 2079, http://dx.doi.org/10.1149/ma2008-02/29/2079

Benick J; Hoex B; Van De Sanden MCM; Kessels WMM; Schultz O; Glunz SW, 2008, 'High efficiency n-type Si solar cells on Al2O 3-passivated boron emitters', Applied Physics Letters, 92, http://dx.doi.org/10.1063/1.2945287

Gielis JJH; Van Den Oever PJ; Hoex B; Van De Sanden MCM; Kessels WMM, 2008, 'Real-time study of a-Si:H/c-Si heterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generation', Physical Review B Condensed Matter and Materials Physics, 77, http://dx.doi.org/10.1103/PhysRevB.77.205329

Hoex B; Schmidt J; Bock R; Altermatt PP; Van De Sanden MCM; Kessels WMM, 2007, 'Excellent passivation of highly doped p -type Si surfaces by the negative-charge-dielectric Al2 O3', Applied Physics Letters, 91, http://dx.doi.org/10.1063/1.2784168

Hoang J; Van TT; Sawkar-Mathur M; Hoex B; Van De Sanden MCM; Kessels WMM; Ostroumov R; Wang KL; Bargar JR; Chang JP, 2007, 'Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer deposition', Journal of Applied Physics, 101, http://dx.doi.org/10.1063/1.2748629

Hoex B; Peeters FJJ; Creatore M; Blauw MA; Kessels WMM; Van De Sanden MCM, 2006, 'High-rate plasma-deposited SiO2 films for surface passivation of crystalline silicon', Journal of Vacuum Science and Technology A Vacuum Surfaces and Films, 24, pp. 1823 - 1830, http://dx.doi.org/10.1116/1.2232580

Hoex B; Heil SBS; Langereis E; Van De Banden MCM; Kessels WMM, 2006, 'Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3', Applied Physics Letters, 89, http://dx.doi.org/10.1063/1.2240736

Agarwal S; Valipa MS; Hoex B; Van De Sanden MCM; Maroudas D; Aydil ES, 2005, 'Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfaces', Surface Science, 598, pp. 35 - 44, http://dx.doi.org/10.1016/j.susc.2005.09.026

Hoex B; Van Erven AJM; Bosch RCM; Stals WTM; Bijker MD; Van Den Oever PJ; Kessels WMM; Van De Sanden MCM, 2005, 'Industrial high-rate (∼5nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions', Progress in Photovoltaics Research and Applications, 13, pp. 705 - 712, http://dx.doi.org/10.1002/pip.628

Agarwal S; Hoex B; Van De Banden MCM; Maraudas D; Aydil ES, 2004, 'Hydrogen in Si-Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon', Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures, 22, pp. 2719 - 2726, http://dx.doi.org/10.1116/1.1824191

Aarts IMP; Hoex B; Smets AHM; Engeln R; Kessels WMM; Van de Sanden MCM, 2004, 'Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy', Applied Physics Letters, 84, pp. 3079 - 3081, http://dx.doi.org/10.1063/1.1713047

Agarwal S; Hoex B; Van De Sanden MCM; Maroudas D; Aydil ES, 2003, 'Absolute densities of N and excited N2 in a N2 plasma', Applied Physics Letters, 83, pp. 4918 - 4920, http://dx.doi.org/10.1063/1.1630843

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