By Professor Ewa Magdalena Goldys

Journal articles

Godlewski M; Goldys EM; Pozina G; Monemar B; Pakula K; Baranowski JM; Prystawko P; Leszczynski M, 2001, 'In-plane and in-depth nonuniformities in defect distribution in GaN and InGaN epilayers', Physica B: Condensed Matter, 308-310, pp. 102 - 105, http://dx.doi.org/10.1016/S0921-4526(01)00671-8

Buyanova IA; Chen WM; Goldys EM; Phillips MR; Xin HP; Tu CW, 2001, 'Strain relaxation in GaNxP1-x alloy: Effect on optical properties', Physica B: Condensed Matter, 308-310, pp. 106 - 109, http://dx.doi.org/10.1016/S0921-4526(01)00708-6

Godlewski M; Goldys EM; Butcher KSA; Phillips MR; Pakula K; Baranowski JM, 2001, 'Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures', Physica Status Solidi (B) Basic Research, 228, pp. 179 - 182, http://dx.doi.org/10.1002/1521-3951(200111)228:1<179::AID-PSSB179>3.0.CO;2-3

Paskova T; Paskov PP; Goldys EM; Darakchieva V; Södervall U; Godlewski M; Zielinski M; Valcheva E; Carlström CF; Wahab Q; Monemar B, 2001, 'Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN', Physica Status Solidi (A) Applied Research, 188, pp. 447 - 451, http://dx.doi.org/10.1002/1521-396X(200111)188:1<447::AID-PSSA447>3.0.CO;2-9

Butcher KSA; Afifuddin ; Chen PPT; Goldys EM; Tansley TL, 2001, 'UV Moderation of Nitride Films during Remote Plasma Enhanced Chemical Vapour Deposition', Physica Status Solidi (A) Applied Research, 188, pp. 667 - 671, http://dx.doi.org/10.1002/1521-396X(200112)188:2<667::AID-PSSA667>3.0.CO;2-S

Motlan ; Goldys EM, 2001, 'Photoluminescence of multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition at atmospheric pressure', Applied Physics Letters, 79, pp. 2976 - 2978, http://dx.doi.org/10.1063/1.1415351

Arnaudov B; Paskova T; Goldys EM; Evtimova S; Monemar B, 2001, 'Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN', Physical Review B - Condensed Matter and Materials Physics, 64, pp. 452131 - 4521312

Paskova T; Goldys EM; Paskov PP; Wahab Q; Wilzen L; De Jong MP; Monemar B, 2001, 'Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN', Applied Physics Letters, 78, pp. 4130 - 4132, http://dx.doi.org/10.1063/1.1381421

Buyanova IA; Chen WM; Goldys EM; Xin HP; Tu CW, 2001, 'Structural properties of a GaNxP1-x alloy: Raman studies', Applied Physics Letters, 78, pp. 3959 - 3961, http://dx.doi.org/10.1063/1.1380244

Godlewski M; Mackowski S; Karczewski G; Goldys EM; Phillips MR, 2001, 'Cathodolfiminescence studies of self-organized cdTe/ZnTe quantum dot structure grown by MBE: In-plane and in-depth properties of the system', Semiconductor Science and Technology, 16, pp. 493 - 496, http://dx.doi.org/10.1088/0268-1242/16/6/314

Godlewski M; Goldys EM; Phillips MR; Pakula K; Baranowski JM, 2001, 'Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layer', Applied Surface Science, 177, pp. 22 - 31, http://dx.doi.org/10.1016/S0169-4332(01)00188-X

Shi JJ; Sanders BC; Pan SH; Goldys EM, 2001, 'Improving performance of resonant tunneling devices in asymmetric structures', Physica E: Low-Dimensional Systems and Nanostructures, 10, pp. 535 - 543, http://dx.doi.org/10.1016/S1386-9477(01)00147-3

Valcheva E; Paskova T; Abrashev MV; Persson PAO; Paskov PP; Goldys EM; Beccard R; Heuken M; Monemar B, 2001, 'Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN', Materials Science and Engineering: B, 82, pp. 35 - 38, http://dx.doi.org/10.1016/S0921-5107(00)00676-0

Goldys EM; Godlewski M; Paskova T; Pozina G; Monemar B, 2001, 'Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN', MRS Internet Journal of Nitride Semiconductor Research, 6, http://dx.doi.org/10.1557/S1092578300000132

Monemar B; Arnaudov B; Evtimova S; Paskova T; Goldys EM, 2001, 'Modeling of the free-electron recombination band in emission spectra of highly conducting (formula presented)', Physical Review B - Condensed Matter and Materials Physics, 64, http://dx.doi.org/10.1103/PhysRevB.64.045213

Goldys EM; Godlewski M; Phillips MR; Toropov AA, 2001, 'Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum wells', Materials Research Society Symposium - Proceedings, 639, pp. G6.12.1 - G6.12.5

Godlewski M; Goldys EM, 2001, 'Role of localisation effects in GaN and InGaN', Proceedings of SPIE-The International Society for Optical Engineering, 4318, pp. 99 - 108, http://dx.doi.org/10.1117/12.417584

Ramelan AH; Drozdowicz-Tomsia K; Goldys EM; Tansley TL, 2001, 'Study of optical and electrical properties of AlxGa1-xSb grown by metalorganic chemical vapor deposition', Journal of Electronic Materials, 30, pp. 965 - 971, http://dx.doi.org/10.1007/BF02657718

Buyanova IA; Chen WM; Goldys EM; Xin HP; Tu CW, 2001, 'Raman Studies of GaNP Alloy', MRS Proceedings, 693, http://dx.doi.org/10.1557/proc-693-i5.4.1

Goldys EM; Godlewski M; Kaminska E; Piotrowska A; Butcher KSA, 2001, 'Spatial Fluctuations and Localisation Effects in Optical Characteristics of p-Doped GaN Films', physica status solidi (b), 228, pp. 365 - 369, http://dx.doi.org/10.1002/1521-3951(200111)228:2<365::aid-pssb365>3.0.co;2-e

Goldys EM; Godlewski M, 2000, 'Nonuniform defect distribution in GaN thin films examined by cathodoluminescence', Applied Physics A: Materials Science and Processing, 70, pp. 329 - 331, http://dx.doi.org/10.1007/s003390050055

Godlewski M; Goldys EM; Phillips MR; Langer R; Barski A, 2000, 'Cathodoluminescence depth-profiling studies of GaN/AlGaN quantum-well structures', Journal of Materials Research, 15, pp. 495 - 501, http://dx.doi.org/10.1557/JMR.2000.0074

Godlewski M; Goldys EM; Phillips MR, 2000, 'Cathodoluminescence studies of in-plane and in-depth properties of GaN epilayers', Journal of Luminescence, 87, pp. 1155 - 1157, http://dx.doi.org/10.1016/S0022-2313(99)00577-3

Subekti A; Goldys EM; Tansley TL, 2000, 'Characterization of undoped gallium antimonide grown by metalorganic chemical vapour deposition', Journal of Physics and Chemistry of Solids, 61, pp. 537 - 544, http://dx.doi.org/10.1016/S0022-3697(99)00248-6

Paskova T; Goldys EM; Yakimova R; Svedberg EB; Henry A; Monemar B, 2000, 'Influence of growth rate on the structure of thick GaN layers grown by HVPE', Journal of Crystal Growth, 208, pp. 18 - 26, http://dx.doi.org/10.1016/S0022-0248(99)00487-X

Goldys E; La Rocca G; Bassani F, 2000, 'Signatures of excitonic dark states in the time-resolved coherent response of a quantum well microcavity', Physical Review B - Condensed Matter and Materials Physics, 61, pp. 10346 - 10360, http://dx.doi.org/10.1103/PhysRevB.61.10346

Sudesh V; Goldys EM, 2000, 'Spectroscopic properties of thulium-doped crystalline materials including a novel host, La2Be2O5: A comparative study', Journal of the Optical Society of America B: Optical Physics, 17, pp. 1068 - 1076, http://dx.doi.org/10.1364/JOSAB.17.001068

Goldys EM; Godlewski M; Langer R; Barski A, 2000, 'Surface morphology of cubic and wurtzite GaN films', Applied Surface Science, 153, pp. 143 - 149, http://dx.doi.org/10.1016/S0169-4332(99)00342-6

Kaminska E; Piotrowska A; Barcz A; Jasinski J; Zielinski M; Golaszewska K; Davis RF; Goldys E; Tomsia K, 2000, 'Zirconium mediated hydrogen outdiffusion from p-GaN', Materials Research Society Symposium - Proceedings, 595, pp. W1091 - W1096

Muensit S; Goldys EM; Guy IL, 1999, 'Shear piezoelectric coefficients of gallium nitride and aluminum nitride', Applied Physics Letters, 75, pp. 3965 - 3967, http://dx.doi.org/10.1063/1.125508

Guy IL; Muensit S; Goldys EM, 1999, 'Electrostriction in gallium nitride', Applied Physics Letters, 75, pp. 3641 - 3643, http://dx.doi.org/10.1063/1.125414

Guy IL; Muensit S; Goldys EM, 1999, 'Extensional piezoelectric coefficients of gallium nitride and aluminum nitride', Applied Physics Letters, 75, pp. 4133 - 4135, http://dx.doi.org/10.1063/1.125560

Shi JJ; Goldys EM, 1999, 'Intersubband optical absorption in strained double barrier quantum well infrared photodetectors', IEEE Transactions on Electron Devices, 46, pp. 83 - 88, http://dx.doi.org/10.1109/16.737445

Paskova T; Birch J; Tungasmita S; Beccard R; Heuken M; Svedberg EB; Runesson P; Goldys EM; Monemar B, 1999, 'Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers', Physica Status Solidi (A) Applied Research, 176, pp. 415 - 419, http://dx.doi.org/10.1002/(SICI)1521-396X(199911)176:1<415::AID-PSSA415>3.0.CO;2-U

Shi JJ; Sanders BC; Pan SH; Goldys EM, 1999, 'Optical waves in a semiconductor planar microcavity', PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 215, pp. 1157 - 1163, http://dx.doi.org/10.1002/(SICI)1521-3951(199910)215:2<1157::AID-PSSB1157>3.0.CO;2-G

Nott GJ; Goldys EM, 1999, 'Accurate modelling of absorption and refractive index in a GaAs/AlGaAs quantum well', Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 526 - 529

Goldys EM; Barski A, 1999, 'Analysis of the red optical emission in cubic gan grown by molecular-beam epitaxy', Physical Review B - Condensed Matter and Materials Physics, 60, pp. 5464 - 5469, http://dx.doi.org/10.1103/PhysRevB.60.5464

Subekti A; Goldys EM; Paterson MJ; Drozdowicz-Tomsia K; Tansley TL, 1999, 'Atmospheric pressure chemical vapor deposition growth window for undoped gallium antimonide', Journal of Materials Research, 14, pp. 1238 - 1245, http://dx.doi.org/10.1557/JMR.1999.0169

Arnaudov B; Paskova T; Goldys EM; Yakimova R; Evtimova S; Ivanov IG; Henry A; Monemar B, 1999, 'Contribution of free-electron recombination to the luminescence spectra of thick GaN films grown by hydride vapor phase epitaxy', Journal of Applied Physics, 85, pp. 7888 - 7892, http://dx.doi.org/10.1063/1.370602

Paskova T; Goldys EM; Monemar B, 1999, 'Hydride vapour-phase epitaxy growth and cathodoluminescence characterization of thick GaN films', Journal of Crystal Growth, 203, pp. 1 - 11, http://dx.doi.org/10.1016/S0022-0248(99)00088-3

Zuo HY; Paterson MJ; Goldys E; Tansley TL; Afifuddin , 1999, 'Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs', Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 199 - 201

Goldys EM; Godlewski M; Drozdowicz-Tomsia K; Langer R; Barski A, 1999, 'Optical emission bands in cubic GaN grown by MBE', Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 202 - 205

Shi JJ; Sanders BC; Shao-Hua P; Goldys EM, 1999, 'Optical waves in a semiconductor planar microcavity', Physica Status Solidi (B) Basic Research, 215, pp. 1157 - 1163, http://dx.doi.org/10.1002/(SICI)1521-3951(199910)215:2<1157::AID-PSSB1157>3.0.CO;2-G

Shi JJ; Sanders BC; Pan SH; Goldys EM, 1999, 'Optical-phonon modes and electron-phonon interaction in arbitrary semiconductor planar microcavities', Physical Review B - Condensed Matter and Materials Physics, 60, pp. 16031 - 16038, http://dx.doi.org/10.1103/PhysRevB.60.16031

Motlan ; Goldys EM; Drozdowicz-Tomsia K; Tansley TL, 1999, 'Size and density control of MOCVD grown self-organized GaSb islands on GaAs', Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 460 - 463

Subekti A; Paterson MJ; Goldys EM; Tansley TL, 1999, 'The influence of substrate on the self-organised island nucleation and morphology of metalorganic chemical vapour deposited GaSb', Applied Surface Science, 140, pp. 190 - 196, http://dx.doi.org/10.1016/S0169-4332(98)00590-X

Goldys EM; Paskova T; Ivanov IG; Arnaudov B; Monemar B, 1998, 'Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence', Applied Physics Letters, 73, pp. 3583 - 3585, http://dx.doi.org/10.1063/1.122831

Godlewski M; Goldys EM; Phillips MR; Langer R; Barski A, 1998, 'Influence of the surface morphology on the yellow and "edge" emissions in wurtzite GaN', Applied Physics Letters, 73, pp. 3686 - 3688, http://dx.doi.org/10.1063/1.122863

Kinder BM; Goldys EM, 1998, 'Microstructural evolution of GaSb self-assembled islands grown by metalorganic chemical vapor deposition', Applied Physics Letters, 73, pp. 1233 - 1235, http://dx.doi.org/10.1063/1.122137

Subekti A; Tansley TL; Goldys EM, 1998, 'Tunnelling transport in Al-n-GaSb schottky diodes', IEEE Transactions on Electron Devices, 45, pp. 2247 - 2248, http://dx.doi.org/10.1109/16.725261

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