By Professor Ewa Magdalena Goldys

Journal articles

Subekti A; Paterson MJ; Goldys EM; Tansley TL, 1999, 'The influence of substrate on the self-organised island nucleation and morphology of metalorganic chemical vapour deposited GaSb', Applied Surface Science, 140, pp. 190 - 196, http://dx.doi.org/10.1016/S0169-4332(98)00590-X

Goldys EM; Paskova T; Ivanov IG; Arnaudov B; Monemar B, 1998, 'Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence', Applied Physics Letters, 73, pp. 3583 - 3585, http://dx.doi.org/10.1063/1.122831

Godlewski M; Goldys EM; Phillips MR; Langer R; Barski A, 1998, 'Influence of the surface morphology on the yellow and "edge" emissions in wurtzite GaN', Applied Physics Letters, 73, pp. 3686 - 3688, http://dx.doi.org/10.1063/1.122863

Kinder BM; Goldys EM, 1998, 'Microstructural evolution of GaSb self-assembled islands grown by metalorganic chemical vapor deposition', Applied Physics Letters, 73, pp. 1233 - 1235, http://dx.doi.org/10.1063/1.122137

Subekti A; Tansley TL; Goldys EM, 1998, 'Tunnelling transport in Al-n-GaSb schottky diodes', IEEE Transactions on Electron Devices, 45, pp. 2247 - 2248, http://dx.doi.org/10.1109/16.725261

Goldys EM; Shi JJ, 1998, 'Linear and nonlinear intersubband optical absorption in a strained double barrier quantum well', PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 210, pp. 237 - 248, http://dx.doi.org/10.1002/(SICI)1521-3951(199811)210:1<237::AID-PSSB237>3.0.CO;2-V

Subekti A; Paterson MJ; Goldys E; Tansley TL, 1998, 'Metalorganic chemical vapour deposition of GaSb quantum dots on germanium', Thin Solid Films, 320, pp. 166 - 168, http://dx.doi.org/10.1016/S0040-6090(98)00348-4

Goldys EM; Zuo HY; Tansley TL; Phillips MR; Contessa CM, 1998, 'Band offsets in In0.15Ga0.85As/GaAs and In0.15Ga0.85As/Al0.15Ga0.85As studied by photoluminescence and cathodoluminescence', Superlattices and Microstructures, 23, pp. 1223 - 1226, http://dx.doi.org/10.1006/spmi.1996.0371

Paterson MJ; Goldys EM; Zuo HY; Tansley TL, 1998, 'Characterisation of microcrystalline GaN grown on quartz and on sapphire by laser and microwave plasma enhanced metalorganic chemical vapour deposition', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 37, pp. 426 - 431, http://dx.doi.org/10.1143/jjap.37.426

Sudesh V; Piper JA; Goldys EM; Seymour RS, 1998, 'Growth, characterization, and laser potential of Tm : La2Be2O5', JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 15, pp. 239 - 246, http://dx.doi.org/10.1364/JOSAB.15.000239

Sudesh V; Piper JA; Goldys EM; Seymour RS, 1998, 'Growth, characterization, and laser potential of Tm:La2Be2O5', Journal of the Optical Society of America B: Optical Physics, 15, pp. 239 - 246, http://dx.doi.org/10.1364/JOSAB.15.000239

Godlewski M; Holz PO; Bergman JP; Monemar B; Reginski K; Bugajski A; Goldys EM; Tansley TL, 1998, 'Inter-island energy transfer and in-plane exciton migration in AlGaAs/GaAs quantum wells detected by exciton dynamics', Superlattices and Microstructures, 23, pp. 107 - 111, http://dx.doi.org/10.1006/spmi.1996.0290

Goldys EM; Shi JJ, 1998, 'Linear and Nonlinear Intersubband Optical Absorption in a Strained Double Barrier Quantum Well', Physica Status Solidi (B) Basic Research, 210, pp. 237 - 248, http://dx.doi.org/10.1002/(SICI)1521-3951(199811)210:1<237::AID-PSSB237>3.0.CO;2-V

Goldys EM; Paterson MJ; Zuo HY; Tansley TL, 1998, 'Low temperature growth of gallium nitride on quartz and sapphire substrates', Materials Science Forum, 264-268, pp. 1205 - 1208, http://dx.doi.org/10.4028/www.scientific.net/msf.264-268.1205

Godlewski M; Suski T; Grzegory I; Porowski S; Langer R; Barski A; Bergman JP; Monemar B; Goldys EM; Phillips MR, 1998, 'Mechanisms of yellow and red photoluminescence in wurtzite and cubic GaN', Acta Physica Polonica A, 94, pp. 326 - 330, http://dx.doi.org/10.12693/APhysPolA.94.326

Godlewski M; Goldys EM; Philips MR; Bergman JP; Monemar B; Langer R; Barski A, 1998, 'Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si', MRS Internet Journal of Nitride Semiconductor Research, 3, http://dx.doi.org/10.1557/S109257830000123X

Goldys EM; Godlewski M; Tansley TL, 1998, 'Morphology and optical properties of laser-assisted chemical vapour deposited GaN', Acta Physica Polonica A, 94, pp. 331 - 335, http://dx.doi.org/10.12693/APhysPolA.94.331

Godlewski M; Holtz PO; Bergman JP; Monemar B; Regiński K; Bugajski M; Goldys EM; Tansley TL, 1997, 'Interisland exciton migration and enhanced bound exciton recombination in an AlGaAs/GaAs quantum well structure grown by molecular beam epitaxy without growth interruptions at interfaces', Semiconductor Science and Technology, 12, pp. 1416 - 1421, http://dx.doi.org/10.1088/0268-1242/12/11/014

Goldys EM; Zuo HY; Phillips MR; Contessa CM; Vaughan MR; Tansley TL, 1997, 'Type I and type II alignment of the light hole band in In0.15Ga0.85As/GaAs and in In0.15Ga0.85As/Al0.15Ga0.85As strained quantum wells', JOURNAL OF ELECTRONIC MATERIALS, 26, pp. 922 - 927, http://dx.doi.org/10.1007/s11664-997-0275-5

Goldys EM; Nott G; Tansley TL; Henini M; Pate MA; Hill G, 1997, 'Operation and theoretical analysis of the multiple asymmetric coupled quantum-well light modulator in the n-i-n configuration', IEEE Journal of Quantum Electronics, 33, pp. 1084 - 1088, http://dx.doi.org/10.1109/3.594869

Arifin P; Tansley TL; Goldys EM, 1997, 'Conduction mechanism in a metal-insulator-semiconductor structure with a low temperature GaAs insulating layer', Solid-State Electronics, 41, pp. 1075 - 1078, http://dx.doi.org/10.1016/S0038-1101(97)00061-0

Godlewski M; Ivanov VY; Kamińska A; Zuo HY; Goldys EM; Tansley TL; Barski A; Rossner U; Rouvicre JL; Arlery M; Grzegory I; Suski T; Porowski S; Bergman JP; Monemar B, 1997, 'On the origin of the yellow donor-acceptor pair emission in GaN', Materials Science Forum, 258-263, pp. 1149 - 1154, http://dx.doi.org/10.4028/www.scientific.net/msf.258-263.1149

Goldys EM; Zuo HY; Phillips MR; Contessa CM; Vaughan MR; Tansley TL, 1997, 'Type I and type II alignment of the light hole band in In0.15Ga0.85As/GaAs and in In0.15Ga0.85As/Al0.15Ga0.85As strained quantum wells', Journal of Electronic Materials, 26, pp. 922 - 927, http://dx.doi.org/10.1007/s11664-997-0275-5

Goldys EM; Mitchell A; Tansley TL; Egan RJ; Clark A, 1996, 'Photoreflectance of AlxGa1-xAs/GaAs and GaAs/GaAs interfaces at high light intensities', Optics Communications, 124, pp. 392 - 399, http://dx.doi.org/10.1016/0030-4018(95)00694-X

Goldys EM; Nott G; Tansley TL; Henini M; Pate MA; Hill G, 1995, 'Current-voltage nonlinearity in the multiquantum well nin modulator structure', Electronics Letters, 31, pp. 2040 - 2041, http://dx.doi.org/10.1049/el:19951366

Arifin P; Goldys EM; Tansley TL, 1995, 'Electron mobility in low temperature grown gallium arsenide', Materials Science and Engineering B, 35, pp. 330 - 333, http://dx.doi.org/10.1016/0921-5107(95)01347-4

Galiev VI; Goldys EM; Novak MG; Polupanov AF; Tansley TL, 1995, 'Exact hole-bound states for semiconductor quantum wells with arbitrary potential profiles', Superlattices and Microstructures, 17, pp. 421 - 429, http://dx.doi.org/10.1006/spmi.1995.1075

Arifin P; Goldys E; Tansley TL, 1995, 'Monte Carlo simulation of electron drift velocity in low-temperature-grown gallium arsenide in a Schottky-barrier model', Physical Review B, 52, pp. 5708 - 5713, http://dx.doi.org/10.1103/PhysRevB.52.5708

Goldys EM; Chin VWL; Tansley TL; Vaughan MR, 1994, 'Photoluminescence excitation interpreted by photon recycling in GaAs/GaAlAs multiple-quantum-well structure', Journal of Applied Physics, 75, pp. 4194 - 4200, http://dx.doi.org/10.1063/1.356004

Osotchan T; Chin VWL; Vaughan MR; Tansley TL; Goldys EM, 1994, 'Electronic band structure of AlxGa1-xAs/AlyGa1-yAs/GaAs double-barrier superlattices', Physical Review B, 50, pp. 2409 - 2419, http://dx.doi.org/10.1103/PhysRevB.50.2409

Goldys EM; Tansley TL, 1994, 'Quantum confined light modulators', Microelectronics Journal, 25, pp. 697 - 712, http://dx.doi.org/10.1016/0026-2692(94)90135-X

Goldys EM; Barczynska J; Godlewski M; Sienkiewicz A; Heijmink Liesert BJ, 1993, 'Germanium-doped gallium phosphide obtained by neutron irradiation', Journal of Applied Physics, 74, pp. 2287 - 2293, http://dx.doi.org/10.1063/1.354712

Davies AG; Brown SA; Dunford RB; Goldys EM; Newbury R; Clark RG; Simmonds PE; Harris JJ; Foxon CT, 1993, 'High-field photoluminescence in GaAs single heterojunctions. Mapping of an optically determined phase boundary correlated with the electron liquid-solid transition', Physica B: Physics of Condensed Matter, 184, pp. 56 - 65, http://dx.doi.org/10.1016/0921-4526(93)90321-V

Goldys EM; Brown SA; Dunford RB; Davies AG; Newbury R; Clark RG; Simmonds PE; Harris JJ; Foxon CT, 1992, 'Magneto-optical probe of two-dimensional electron liquid and solid phases', Physical Review B, 46, pp. 7957 - 7960, http://dx.doi.org/10.1103/PhysRevB.46.7957

Brown SA; Davies AG; Dunford RB; Goldys EM; Newbury R; Clark RG; Simmonds PE; Harris JJ; Foxon CT, 1992, 'Magneto-photoluminescence studies of a 2D electron system: Signatures of the fractional quantum Hall effect and Wigner solid', Superlattices and Microstructures, 12, pp. 433 - 442, http://dx.doi.org/10.1016/0749-6036(92)90296-H

LIESERT BJH; GODLEWSKI M; GREGORKIEWICZ T; AMMERLAAN CAJ; GOLDYS E, 1991, 'NEUTRON TRANSMUTATION DOPED GAP - OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES', ACTA PHYSICA POLONICA A, 79, pp. 401 - 404, http://dx.doi.org/10.12693/APhysPolA.79.401

BABINSKI A; GOLDYS E, 1991, 'PASSIVATION OF A BULK DEFECT EC-0.22 EV IN GAAS BY CONTACT WITH PHOSPHORIC-ACID', ACTA PHYSICA POLONICA A, 79, pp. 277 - 280, http://dx.doi.org/10.12693/APhysPolA.79.277

GOLDYS E; GODLEWSKI M; SIENKIEWICZ A, 1991, 'THE LUMINESCENCE AND EPR CHARACTERIZATION OF NEUTRON TRANSMUTATION DOPED GALLIUM-PHOSPHIDE', ACTA PHYSICA POLONICA A, 79, pp. 259 - 262, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1991FQ50500024&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

BARCZYNSKA J; GOLDYS E, 1990, 'NEW, GERMANIUM-RELATED DEFECT IN NEUTRON-IRRADIATED GALLIUM-PHOSPHIDE', IMPURITIES, DEFECTS AND DIFFUSION IN SEMICONDUCTORS : BULK AND LAYERED STRUCTURES, 163, pp. 179 - 184, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1990BR53C00028&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

Goldys E, 1989, 'Photoionisation and Inter (Conduction) Band Absorption in S and Te Doped Gallium Phosphide', physica status solidi (b), 154, pp. 397 - 404, http://dx.doi.org/10.1002/pssb.2221540141

Khanh DN; Goldys E; Grynberg M, 1989, 'Resonance scattering of photoexcited electrons in n-GaP', Solid State Communications, 72, pp. 959 - 962, http://dx.doi.org/10.1016/0038-1098(89)90436-5

Goldys E; Galtier P; Martinez G; Gorczyca I, 1987, 'Low-temperature infrared absorption of n-type GaP', Physical Review B, 36, pp. 9662 - 9670, http://dx.doi.org/10.1103/PhysRevB.36.9662

Pastor K; Gołdys E, 1985, 'Observation of cyclotron resonance halfwidth in pure n-CdTe', Solid State Communications, 55, pp. 671 - 674, http://dx.doi.org/10.1016/0038-1098(85)90230-3

Goldys EM, 1984, 'The Donor Wave Functions in Gallium Phosphide and the Real Band Structure', physica status solidi (b), 124, pp. K79 - K82, http://dx.doi.org/10.1002/pssb.2221240165

Goldys E; Gortel ZW; Kreuzer HJ, 1982, 'Desorption kinetics mediated by surface phonon modes', Surface Science, 116, pp. 33 - 65, http://dx.doi.org/10.1016/0039-6028(82)90678-1

Goldys E; Gortel ZW; Kreuzer HJ, 1982, 'Desorption kinetics mediated by surface phonon modes', Surface Science Letters, 116, pp. A148 - A148, http://dx.doi.org/10.1016/0167-2584(82)90370-x

Goldys E; Gortel ZW; Kreuzer HJ, 1981, 'Surface Debye temperature in desorption kinetics', Solid State Communications, 40, pp. 963 - 965, http://dx.doi.org/10.1016/0038-1098(81)90044-2

Conference Papers

Li Y; Deng F; Li Y; Goldys E; Zhang C, 2023, 'Integrated RPA-CRISPR/Cas12a system towards Point-of-Care H. pylori detection', in Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS, Institute of Electrical and Electronics Engineers (IEEE), Sydney, pp. 1 - 4, presented at 45th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, 2023, Sydney, 24 July 2023 - 27 July 2023, http://dx.doi.org/10.1109/EMBC40787.2023.10340749

Zhang C; Deng F; Goldys E; Hall T; Li Y, 2023, 'Paper-based lateral flow assay for the point-of-care detection of neurofilament light chain', in Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS, Institute of Electrical and Electronics Engineers (IEEE), Sydney, pp. 1 - 4, presented at 45th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, 2023, Sydney, 24 July 2023 - 27 July 2023, http://dx.doi.org/10.1109/EMBC40787.2023.10340109

Deng F; Kaur J; Goldys E; Morris M, 2023, 'QDs-based fluorescent lateral flow assays for Point-of-care testing of insulin', in Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBS, Institute of Electrical and Electronics Engineers (IEEE), Sydney, pp. 1 - 4, presented at 45th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, 2023, Sydney, 24 July 2023 - 27 July 2023, http://dx.doi.org/10.1109/EMBC40787.2023.10340110

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