By Professor Ewa Magdalena Goldys

Journal articles

Ramelan AH; Butcher KSA; Goldys EM; Tansley TL, 2004, 'High-resolution X-ray photoelectron spectroscopy of Al x Ga 1-x Sb', Applied Surface Science, 229, pp. 263 - 267, http://dx.doi.org/10.1016/j.apsusc.2004.02.001

Gelhausen O; Phillips MR; Goldys EM; Paskova T; Monemar B; Strassburg M; Hoffmann A, 2004, 'Dissociation of H-related defect complexes in Mg-doped GaN', Physical Review B - Condensed Matter and Materials Physics, 69, http://dx.doi.org/10.1103/PhysRevB.69.125210

Godlewski M; Łusakowska E; Goldys EM; Phillips MR; Böttcher T; Figge S; Hommel D; Prystawko P; Leszczynski M; Grzegory I; Porowski S, 2004, 'Diffusion length of carriers and excitons in GaN - Influence of epilayer microstructure', Applied Surface Science, 223, pp. 294 - 302, http://dx.doi.org/10.1016/j.apsusc.2003.09.012

Motlan ; Goldys EM; Butcher KSA; Tansley TL, 2004, 'Cathodoluminescence of GaSb/GaAs self-assembled quantum dots grown by MOCVD', Materials Letters, 58, pp. 80 - 83, http://dx.doi.org/10.1016/S0167-577X(03)00419-1

Shi JJ; Chu XL; Goldys EM, 2004, 'Propagating optical-phonon modes and their electron-phonon interactions in wurtzite GaN/AlxGa1-xN quantum wells', Physical Review B - Condensed Matter and Materials Physics, 70, http://dx.doi.org/10.1103/PhysRevB.70.115318

Gelhausen O; Phillips MR; Goldys EM, 2003, 'A method to improve the light emission efficiency of Mg-doped GaN', Journal of Physics D: Applied Physics, 36, pp. 2976 - 2979, http://dx.doi.org/10.1088/0022-3727/36/23/018

Gelhausen O; Klein HN; Phillips MR; Goldys EM, 2003, 'Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN', Applied Physics Letters, 83, pp. 3293 - 3295, http://dx.doi.org/10.1063/1.1619210

Gelhausen O; Klein HN; Phillips MR; Goldys EM, 2003, 'Electron irradiation-induced electro-migration and diffusion of defects in Mg-doped GaN', Physica Status Solidi (B) Basic Research, 239, pp. 310 - 315, http://dx.doi.org/10.1002/pssb.200301844

Motlan ; Butcher KSA; Goldys EM; Tansley TL, 2003, 'Multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition', Materials Chemistry and Physics, 81, pp. 8 - 10, http://dx.doi.org/10.1016/S0254-0584(03)00163-9

Butcher KA; Godlewski M; Godlewski MM; Goldys EM; Kopalko K; Phillips MR; Szczerbakow A; Łusakowska E, 2003, 'Atomic layer deposition of ZnO thin films and dot structures', Proceedings of the Estonian Academy of Sciences. Physics. Mathematics, 52, pp. 277 - 277, http://dx.doi.org/10.3176/phys.math.2003.3.04

Motlan ; Goldys EM; Tansley TL, 2002, 'The effect of target nitridation on structural properties of InN grown by radio-frequency reactive sputtering', Thin Solid Films, 422, pp. 28 - 32, http://dx.doi.org/10.1016/S0040-6090(02)00772-1

Ramelan AH; Goldys EM, 2002, 'Hole mobility in Al xGa 1-xSb grown by metalorganic chemical vapor deposition', Journal of Applied Physics, 92, pp. 6051 - 6056, http://dx.doi.org/10.1063/1.1506192

Gelhausen O; Klein HN; Phillips MR; Goldys EM, 2002, 'Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN', Applied Physics Letters, 81, pp. 3747 - 3749, http://dx.doi.org/10.1063/1.1519358

Butcher KSA; Timmers H; Afifuddin ; Chen PPT; Weijers TDM; Goldys EM; Tansley TL; Elliman RG; Freitas JA, 2002, 'Crystal size and oxygen segregation for polycrystalline GaN', Journal of Applied Physics, 92, pp. 3397 - 3403, http://dx.doi.org/10.1063/1.1499232

Solov’ev VA; Toropov AA; Meltser BY; Terent’ev YA; Kyutt RN; Sitnikova AA; Semenov AN; Ivanov SV; Motlan M; Goldys EM; Kop’ev PS, 2002, 'GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics', Semiconductors, 36, pp. 816 - 820, http://dx.doi.org/10.1134/1.1493755

Valcheva E; Paskova T; Abrashev MV; Paskov PP; Persson POA; Goldys EM; Beccard R; Heuken M; Monemar B, 2002, 'Erratum: Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates (Journal of Applied Physics (2001) 90 (6011))', Journal of Applied Physics, 91, pp. 6778, http://dx.doi.org/10.1063/1.1471940

Galiev VI; Kruglov AN; Polupanov AF; Goldys EM; Tansley TL, 2002, 'Multichannel carrier scattering at quantum-well heterostructures', Semiconductors, 36, pp. 546 - 551, http://dx.doi.org/10.1134/1.1478546

Motlan ; Goldys EM; Tansley TL, 2002, 'Optical and electrical properties of InN grown by radio-frequency reactive sputtering', Journal of Crystal Growth, 241, pp. 165 - 170, http://dx.doi.org/10.1016/S0022-0248(02)01155-7

Motlan ; Goldys EM; Tansley TL, 2002, 'Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD', Journal of Crystal Growth, 236, pp. 621 - 626, http://dx.doi.org/10.1016/S0022-0248(02)00845-X

Toropov AA; Solov'ev VA; Mel'tser BY; Terent'ev YV; Kyutt RN; Semenov AN; Ivanov SV; Kop'ev PS; Motlan ; Goldys EM, 2002, 'GaAs in gaSb: A new type of heterostructure emitting at 2 μm wavelength', Journal of Materials Chemistry, 12, pp. 309 - 311, http://dx.doi.org/10.1039/b104183p

Buyanova IA; Chen WM; Goldys EM; Xin HP; Tu CW, 2002, 'Raman studies of GaNP alloy', Materials Research Society Symposium - Proceedings, 693, pp. 303 - 308

Valcheva E; Paskova T; Abrashev MV; Paskov PP; Persson POA; Goldys EM; Beccard R; Heuken M; Monemar B, 2001, 'Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates', Journal of Applied Physics, 90, pp. 6011 - 6016, http://dx.doi.org/10.1063/1.1415363

Godlewski M; Goldys EM; Pozina G; Monemar B; Pakula K; Baranowski JM; Prystawko P; Leszczynski M, 2001, 'In-plane and in-depth nonuniformities in defect distribution in GaN and InGaN epilayers', Physica B: Condensed Matter, 308-310, pp. 102 - 105, http://dx.doi.org/10.1016/S0921-4526(01)00671-8

Buyanova IA; Chen WM; Goldys EM; Phillips MR; Xin HP; Tu CW, 2001, 'Strain relaxation in GaNxP1-x alloy: Effect on optical properties', Physica B: Condensed Matter, 308-310, pp. 106 - 109, http://dx.doi.org/10.1016/S0921-4526(01)00708-6

Godlewski M; Goldys EM; Butcher KSA; Phillips MR; Pakula K; Baranowski JM, 2001, 'Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures', Physica Status Solidi (B) Basic Research, 228, pp. 179 - 182, http://dx.doi.org/10.1002/1521-3951(200111)228:1<179::AID-PSSB179>3.0.CO;2-3

Paskova T; Paskov PP; Goldys EM; Darakchieva V; Södervall U; Godlewski M; Zielinski M; Valcheva E; Carlström CF; Wahab Q; Monemar B, 2001, 'Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN', Physica Status Solidi (A) Applied Research, 188, pp. 447 - 451, http://dx.doi.org/10.1002/1521-396X(200111)188:1<447::AID-PSSA447>3.0.CO;2-9

Butcher KSA; Afifuddin ; Chen PPT; Goldys EM; Tansley TL, 2001, 'UV Moderation of Nitride Films during Remote Plasma Enhanced Chemical Vapour Deposition', Physica Status Solidi (A) Applied Research, 188, pp. 667 - 671, http://dx.doi.org/10.1002/1521-396X(200112)188:2<667::AID-PSSA667>3.0.CO;2-S

Motlan ; Goldys EM, 2001, 'Photoluminescence of multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition at atmospheric pressure', Applied Physics Letters, 79, pp. 2976 - 2978, http://dx.doi.org/10.1063/1.1415351

Arnaudov B; Paskova T; Goldys EM; Evtimova S; Monemar B, 2001, 'Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN', Physical Review B - Condensed Matter and Materials Physics, 64, pp. 452131 - 4521312

Paskova T; Goldys EM; Paskov PP; Wahab Q; Wilzen L; De Jong MP; Monemar B, 2001, 'Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN', Applied Physics Letters, 78, pp. 4130 - 4132, http://dx.doi.org/10.1063/1.1381421

Buyanova IA; Chen WM; Goldys EM; Xin HP; Tu CW, 2001, 'Structural properties of a GaNxP1-x alloy: Raman studies', Applied Physics Letters, 78, pp. 3959 - 3961, http://dx.doi.org/10.1063/1.1380244

Godlewski M; Mackowski S; Karczewski G; Goldys EM; Phillips MR, 2001, 'Cathodolfiminescence studies of self-organized cdTe/ZnTe quantum dot structure grown by MBE: In-plane and in-depth properties of the system', Semiconductor Science and Technology, 16, pp. 493 - 496, http://dx.doi.org/10.1088/0268-1242/16/6/314

Godlewski M; Goldys EM; Phillips MR; Pakula K; Baranowski JM, 2001, 'Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: Role of GaN buffer layer', Applied Surface Science, 177, pp. 22 - 31, http://dx.doi.org/10.1016/S0169-4332(01)00188-X

Shi JJ; Sanders BC; Pan SH; Goldys EM, 2001, 'Improving performance of resonant tunneling devices in asymmetric structures', Physica E: Low-Dimensional Systems and Nanostructures, 10, pp. 535 - 543, http://dx.doi.org/10.1016/S1386-9477(01)00147-3

Valcheva E; Paskova T; Abrashev MV; Persson PAO; Paskov PP; Goldys EM; Beccard R; Heuken M; Monemar B, 2001, 'Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN', Materials Science and Engineering: B, 82, pp. 35 - 38, http://dx.doi.org/10.1016/S0921-5107(00)00676-0

Goldys EM; Godlewski M; Paskova T; Pozina G; Monemar B, 2001, 'Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN', MRS Internet Journal of Nitride Semiconductor Research, 6, http://dx.doi.org/10.1557/S1092578300000132

Monemar B; Arnaudov B; Evtimova S; Paskova T; Goldys EM, 2001, 'Modeling of the free-electron recombination band in emission spectra of highly conducting (formula presented)', Physical Review B - Condensed Matter and Materials Physics, 64, http://dx.doi.org/10.1103/PhysRevB.64.045213

Goldys EM; Godlewski M; Phillips MR; Toropov AA, 2001, 'Photo- and cathodoluminescence investigations of piezoelectric GaN/AlGaN quantum wells', Materials Research Society Symposium - Proceedings, 639, pp. G6.12.1 - G6.12.5

Godlewski M; Goldys EM, 2001, 'Role of localisation effects in GaN and InGaN', Proceedings of SPIE-The International Society for Optical Engineering, 4318, pp. 99 - 108, http://dx.doi.org/10.1117/12.417584

Ramelan AH; Drozdowicz-Tomsia K; Goldys EM; Tansley TL, 2001, 'Study of optical and electrical properties of AlxGa1-xSb grown by metalorganic chemical vapor deposition', Journal of Electronic Materials, 30, pp. 965 - 971, http://dx.doi.org/10.1007/BF02657718

Buyanova IA; Chen WM; Goldys EM; Xin HP; Tu CW, 2001, 'Raman Studies of GaNP Alloy', MRS Proceedings, 693, http://dx.doi.org/10.1557/proc-693-i5.4.1

Goldys EM; Godlewski M; Kaminska E; Piotrowska A; Butcher KSA, 2001, 'Spatial Fluctuations and Localisation Effects in Optical Characteristics of p-Doped GaN Films', physica status solidi (b), 228, pp. 365 - 369, http://dx.doi.org/10.1002/1521-3951(200111)228:2<365::aid-pssb365>3.0.co;2-e

Goldys EM; Godlewski M, 2000, 'Nonuniform defect distribution in GaN thin films examined by cathodoluminescence', Applied Physics A: Materials Science and Processing, 70, pp. 329 - 331, http://dx.doi.org/10.1007/s003390050055

Godlewski M; Goldys EM; Phillips MR; Langer R; Barski A, 2000, 'Cathodoluminescence depth-profiling studies of GaN/AlGaN quantum-well structures', Journal of Materials Research, 15, pp. 495 - 501, http://dx.doi.org/10.1557/JMR.2000.0074

Godlewski M; Goldys EM; Phillips MR, 2000, 'Cathodoluminescence studies of in-plane and in-depth properties of GaN epilayers', Journal of Luminescence, 87, pp. 1155 - 1157, http://dx.doi.org/10.1016/S0022-2313(99)00577-3

Subekti A; Goldys EM; Tansley TL, 2000, 'Characterization of undoped gallium antimonide grown by metalorganic chemical vapour deposition', Journal of Physics and Chemistry of Solids, 61, pp. 537 - 544, http://dx.doi.org/10.1016/S0022-3697(99)00248-6

Paskova T; Goldys EM; Yakimova R; Svedberg EB; Henry A; Monemar B, 2000, 'Influence of growth rate on the structure of thick GaN layers grown by HVPE', Journal of Crystal Growth, 208, pp. 18 - 26, http://dx.doi.org/10.1016/S0022-0248(99)00487-X

Goldys E; La Rocca G; Bassani F, 2000, 'Signatures of excitonic dark states in the time-resolved coherent response of a quantum well microcavity', Physical Review B - Condensed Matter and Materials Physics, 61, pp. 10346 - 10360, http://dx.doi.org/10.1103/PhysRevB.61.10346

Sudesh V; Goldys EM, 2000, 'Spectroscopic properties of thulium-doped crystalline materials including a novel host, La2Be2O5: A comparative study', Journal of the Optical Society of America B: Optical Physics, 17, pp. 1068 - 1076, http://dx.doi.org/10.1364/JOSAB.17.001068

Goldys EM; Godlewski M; Langer R; Barski A, 2000, 'Surface morphology of cubic and wurtzite GaN films', Applied Surface Science, 153, pp. 143 - 149, http://dx.doi.org/10.1016/S0169-4332(99)00342-6

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