By Scientia Professor Alexander Hamilton

Journal articles

Yeoh LA; Srinivasan A; Martin TP; Klochan O; Micolich AP; Hamilton AR, 2010, 'Piezoelectric rotator for studying quantum effects in semiconductor nanostructures at high magnetic fields and low temperatures', Review of Scientific Instruments, 81, http://dx.doi.org/10.1063/1.3502645

Raoux ; Polini M; Asgari R; Hamilton AR; Fazio R; MacDonald AH, 2010, 'Velocity-modulation control of electron-wave propagation in graphene', Physical Review - Section B - Condensed Matter, 81, pp. 073407-1 - 073407-4, http://dx.doi.org/10.1103/PhysRevB.81.073407

Ho L; Micolich AP; Hamilton AR; Sushkov OP, 2009, 'Ground plane screening of Coulomb interactions in two-dimensional systems: How effectively can one two-dimensional system screen interactions in another', Physical Review B: Condensed Matter and Materials Physics, 80, http://dx.doi.org/10.1103/PhysRevB.80.155412

Neilson D; Hamilton AR, 2009, 'Quantum tunnelling and hopping between metallic domains in disordered two-dimensional mesoscopic electron systems', JOURNAL OF PHYSICS A-MATHEMATICAL AND THEORETICAL, 42, pp. 214012-1 - 214012-8, http://dx.doi.org/10.1088/1751-8113/42/21/214012

MacLeod S; Chan KC; Martin TP; Hamilton AR; See A; Micolich AP; Aagesen M; Lindelof PE, 2009, 'Role of background impurities in the single-particle relaxation lifetime of a two-dimensional electron gas', Physical Review B: Condensed Matter and Materials Physics, 80, http://dx.doi.org/10.1103/PhysRevB.80.035310

Klochan O; Micolich AP; Ho L; Hamilton AR; Muraki K; Hirayama Y, 2009, 'The interplay between one-dimensional confinement and two-dimensional crystallographic anisotropy effects in ballistic hole quantum wires', New Journal of Physics, 11, http://dx.doi.org/10.1088/1367-2630/11/4/043018

Danneau RJ; Klochan O; Clarke WR; Ho L; Micolich AP; Simmons MY; Hamilton AR; Pepper M; Ritchie DA, 2008, '0.7 Structure and zero bias anomaly in ballistic hole quantum wires', Physical Review Letters, 100

Marlow C; Samuelson L; Hamilton AR; Linke H; Taylor RP; Martin TP, 2008, 'Confinement properties of a Ga0.25In0.75As/InP quantum point contact', Physical Review - Section B - Condensed Matter, 77, pp. 155309 - 155313, http://dx.doi.org/10.1103/PhysRevB.77.155309

Ho L; Clarke WR; Micolich AP; Danneau RJ; Klochan O; Simmons MY; Hamilton AR; Pepper M; Ritchie DA, 2008, 'Effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems', Physical Review B: Condensed Matter and Materials Physics, 77

Goh KE; Simmons MY; Hamilton AR, 2008, 'Electron-electron interactions in highly disordered two-dimensional systems', Physical Review - Section B - Condensed Matter, 77, pp. 235410 - 235418

Martin TP; Szorkovsky A; Micolich AP; Hamilton AR; Marlow C; Linke H; Taylor RP; Samuelson L, 2008, 'Enhanced Zeeman splitting in Ga0.25 In0.75 As quantum point contacts', Applied Physics Letters, 93, http://dx.doi.org/10.1063/1.2957033

Clarke WR; Yasin CE; Hamilton AR; Micolich AP; Simmons MY; Muraki K; Hirayama Y; Pepper M; Ritchie DA, 2008, 'Impact of long- and short-range disorder on the metallic behaviour of two-dimensional systems', Nature Physics, 4, pp. 55 - 59

Ruess FJ; Micolich AP; Pok W; Goh KE; Hamilton AR; Simmons MY, 2008, 'Ohmic conduction of sub- 10 nm P-doped silicon nanowires at cryogenic temperatures', Applied Physics Letters, 92, http://dx.doi.org/10.1063/1.2840182

Hamilton AR; Klochan O; Danneau RJ; Clarke WR; Ho L; Micolich AP; Simmons MY; Pepper M; Ritchie DA; Muraki K; Hirayama Y, 2008, 'Quantum transport in one-dimensional GaAs hole systems', INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 5, pp. 318 - 330, http://dx.doi.org/10.1504/IJNT.2008.016921

Taskinen L; Starrett RP; Martin TP; Micolich AP; Hamilton AR; Simmons MY; Ritchie DA; Pepper M, 2008, 'Radio-frequency reflectometry on large gated two-dimensional systems', Review of Scientific Instruments, 79

Hamilton AR; Danneau RJ; Klochan O; Clarke WR; Micolich AP; Ho L; Simmons MY; Ritchie DA; Pepper M; Muraki K; Hirayama Y, 2008, 'The 0.7 anomaly in one-dimensional hole quantum wires', Journal of Physics: Condensed Matter, 20, http://dx.doi.org/10.1088/0953-8984/20/16/164205

Pok W; Reusch TC; Scappucci G; Ruess FJ; Hamilton AR; Simmons MY, 2007, 'Electrical characterization of ordered SiT dopant arrays', IEEE Transactions on Nanotechnology, 6, pp. 213 - 217

Ruess FJ; Pok W; Goh KE; Hamilton AR; Simmons MY, 2007, 'Electronic properties of atomically abrupt tunnel junctions in silicon', Physical Review - Section B - Condensed Matter, 75, pp. 121303 - 121306

Ruess FJ; Goh KE; Butcher M; Reusch TC; Oberbeck L; Weber B; Hamilton AR; Simmons MY, 2007, 'Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy', Nanotechnology, 18, pp. 44023 - 44028, http://dx.doi.org/10.1088/0957-4484/18/4/044023

Ruess FJ; Weber B; Goh KE; Klochan O; Hamilton AR; Simmons MY, 2007, 'One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy', Physical Review - Section B - Condensed Matter, 76, pp. 85403 - 85410

Ruess FJ; Pok W; Reusch TC; Butcher M; Goh KE; Oberbeck L; Scappucci G; Hamilton AR; Simmons MY, 2007, 'Realization of atomically controlled dopant devices in silicon', Small, 3, pp. 563 - 567, http://dx.doi.org/10.1002/smll.200600680

Goh KE; Simmons MY; Hamilton AR, 2007, 'Use of low-temperature Hall effect to measure dopant activation: Role of electron-electron interactions', Physical Review - Section B - Condensed Matter, 76, pp. 193305 - 193308

Ferguson AJ; Chan VC; Hamilton AR; Clark RG, 2006, 'Electric-field-induced charge noise in doped silicon: Ionization of phosphorus donors', APPLIED PHYSICS LETTERS, 88, http://dx.doi.org/10.1063/1.2198013

Klochan O; Clarke WR; Danneau RJ; Micolich AP; Ho L; Hamilton AR; Muraki K; Hirayama Y, 2006, 'Ballistic transport in induced one-dimensional hole systems', Applied Physics Letters, 89, http://dx.doi.org/10.1063/1.2337525

Danneau RJ; Clarke WR; Klochan O; Micolich AP; Hamilton AR; Simmons MY; Pepper M; Ritchie DA, 2006, 'Conductance quantization and the 0.7×2e2/h conductance anomaly in one-dimensional hole systems', Applied Physics Letters, 88, http://dx.doi.org/10.1063/1.2161814

Buehler TM; Chan VC; Ferguson AJ; Dzurak A; Hudson FE; Reilly DJ; Hamilton AR; Clark RG; Jamieson DN; Pakes CI; Prawer S; Yang C, 2006, 'Controlled single electron transfer between Si:P dots', Applied Physics Letters, 88, pp. 192101 - 192103, http://dx.doi.org/10.1063/1.2203740

Ferguson AJ; Chan VC; Hamilton AR; Clark RG, 2006, 'Electric-field-induced charge noise in doped silicon: Ionization of phosphorus donors', Applied Physics Letters, 88, pp. 162117 - 162119, http://dx.doi.org/10.1063/1.2198013

McCamey DR; Huebl H; Brandt MS; Hutchison WD; McCallum JC; Clark RG; Hamilton AR, 2006, 'Electrically detected magnetic resonance in ion-implanted Si:P nanostructures', Applied Physics Letters, 89, pp. 182115 - 182117

Clarke WR; Micolich AP; Hamilton AR; Simmons MY; Muraki K; Hirayama Y, 2006, 'Fabrication of induced two-dimensional hole systems on (311)A GaAs', Journal of Applied Physics, 99, http://dx.doi.org/10.1063/1.2163998

Goh KE; Oberbeck L; Simmons MY; Hamilton AR; Butcher M, 2006, 'Influence of doping density on electronic transport in degenerate Si : P delta-doped layers', Physical Review - Section B - Condensed Matter, 73, pp. 355401 - 355406

Micolich AP; Tavenner E; Powell B; Hamilton AR; Curry M; Giedd R; Meredith P, 2006, 'Superconductivity in metal-mixed ion-implanted polymer films', Applied Physics Letters, 89, http://dx.doi.org/10.1063/1.2358190

Danneau RJ; Klochan O; Clarke WR; Ho L; Micolich AP; Simmons MY; Hamilton AR; Pepper M; Ritchie DA; Zulicke U, 2006, 'Zeeman spin-splitting anisotropy in ballistic hole quantum wires', Physical Review Letters, 97, http://dx.doi.org/10.1103/PhysRevLett.97.026403

Ferguson AJ; Chan V; Hamilton AR; Clark RG, 2005, 'Electric field induced charge noise in doped silicon: Ionisation of phosphorus dopants', AIP Conference Proceedings, 772, pp. 1449 - 1450, http://dx.doi.org/10.1063/1.1994660

Greentree AD; Cole JH; Hamilton AR; Hollenberg LCL, 2005, 'Scaling of coherent tunneling adiabatic passage in solid-state coherent quantum systems', Proceedings of SPIE - The International Society for Optical Engineering, 5650, pp. 72 - 80, http://dx.doi.org/10.1117/12.583193

Buehler TM; Reilly DJ; Starrett RP; Greentree AD; Hamilton AR; Dzurak AS; Clark RG, 2005, 'Single-shot readout with the radio-frequency single-electron transistor in the presence of charge noise', Applied Physics Letters, 86, pp. 1 - 3, http://dx.doi.org/10.1063/1.1897423

McCamey DR; Francis M; McCallum JC; Hamilton R; Greentree AD; Clark RG, 2005, 'Donor activation and damage in Si-SiO2 from low-dose, low-energy ion implantation studied via electrical transport in MOSFETs', Semiconductor Science and Technology, 20, pp. 363 - 368

Greentree AD; Hamilton AR; Clark RG; Hollenberg L, 2005, 'Electrical readout of a spin qubit without double occupancy', Physical Review - Section B - Condensed Matter, 71, pp. 113310 - 113313

Clarke WR; Micolich AP; Hamilton AR; Simmons MY; Hanna CB; Rodriguez J; Pepper M; Ritchie DA, 2005, 'Evolution of the bilayer v=1 quantum Hall state under charge imbalance', Physical Review B: Condensed Matter and Materials Physics, 71

Yasin CE; Sobey T; Micolich AP; Clarke WR; Hamilton AR; Simmons MY; Pfeiffer LN; West KW; Linfield EH; Pepper M; Ritchie DA, 2005, 'Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems', Physical Review B: Condensed Matter and Materials Physics, 72

Simmons MY; Ruess FJ; Goh KE; Hallam T; Schofield SR; Oberbeck L; Curson NJ; Hamilton AR; Butcher M; Clark RG; Reusch TC, 2005, 'Scanning probe microscopy for silicon device fabrication', Molecular Simulation, 31, pp. 505 - 514

Buehler TM; Reilly DJ; Starrett RP; Greentree AD; Hamilton AR; Dzurak A; Clark RG, 2005, 'Single-shot readout with the radio-frequency single-electron transistor in the presence of charge noise', Applied Physics Letters, 86, pp. 143117-1 - 143117-3

Ruess FJ; Oberbeck L; Simmons MY; Goh KE; Hamilton AR; Hallam T; Curson NJ; Clark RG, 2005, 'The fabrication of devices in silicon using scanning probe microscopy', Proceedings of SPIE Volume 7503, 5649, pp. 306 - 310, http://dx.doi.org/10.1117/12.582283

Ruess FJ; Oberbeck L; Goh KE; Butcher M; Gauja E; Hamilton AR; Simmons MY, 2005, 'The use of etched registration markers to make four-terminal electrical contacts to STM-patterned nanostructures', Nanotechnology, 16, pp. 2446 - 2449

Hollenberg LCL; Dzurak AS; Wellard C; Hamilton AR; Reilly DJ; Milburn GJ; Clark RG, 2004, 'Charge-based quantum computing using single donors in semiconductors', Physical Review B - Condensed Matter and Materials Physics, 69, http://dx.doi.org/10.1103/PhysRevB.69.113301

Greentree AD; Cole JH; Hamilton AR; Hollenberg LCL, 2004, 'Coherent electronic transfer in quantum dot systems using adiabatic passage', Physical Review B - Condensed Matter and Materials Physics, 70, pp. 1 - 6, http://dx.doi.org/10.1103/PhysRevB.70.235317

Greentree AD; Hamilton AR; Green F, 2004, 'Charge shelving and bias spectroscopy for the readout of a charge qubiton the basis of superposition states', Physical Review - Section B - Condensed Matter, 70, pp. 413051 - 413054

Dzurak A; Hamilton AR; Reilly DJ; Clark RG; Hollenberg L; Wellard CJ; Milburn GY, 2004, 'Charge-based quantum computing using single donors in semiconductors', Physical Review - Section B - Condensed Matter, 69, pp. 1 - 4

Greentree AD; Cole J; Hamilton AR; Hollenberg LC; Hollenberg , 2004, 'Coherent electronic transfer in quantum dot systems using adiabatic passage', Physical Review - Section B - Condensed Matter, 70, pp. 2353171 - 2353176

Buehler TM; Reilly DJ; Starrett RP; Court NA; Hamilton AR; Dzurak A; Clark RG, 2004, 'Development and operation of the twin radio frequency single electron transistor for cross-correlated charge detection', Journal of Applied Physics, 96, pp. 4508 - 4513

Goh KE; Oberbeck L; Simmons MY; Hamilton AR; Clark RG, 2004, 'Effect of encapsulation temperature on Si : P delta-doped layers', Applied Physics Letters, 85, pp. 4953 - 4955

Back to profile page