By Scientia Professor Martin Green

Journal articles

Lee SH; Green MA, 1991, 'Evaluation of binary and ternary melts for the low temperature liquid phase epitaxial growth of silicon', Journal of Electronic Materials, 20, pp. 635 - 641

Healy SA; Young TL; Green MA, 1991, 'Low-temperature growth of silicon on Si1-xGex by liquid phase epitaxy', Journal of Crystal Growth, 112, pp. 287 - 290, http://dx.doi.org/10.1016/0022-0248(91)90930-4

Chin VWL; Storey JWV; Green MA, 1991, 'A note on current-voltage measurements of n-type and p-type Pd2Si Schottky diodes', Solid State Electronics, 34, pp. 215 - 216, http://dx.doi.org/10.1016/0038-1101(91)90091-C

Green M, 1991, 'EEC directive on EMC - implications for manufacturers and users of instrumentation', Measurement and Control, 24, pp. 207 - 209, http://dx.doi.org/10.1177/002029409102400704

Zhengrong S; Young TL; Green MA, 1991, 'Low-temperature liquid phase epitaxy of silicon', Materials Letters, 12, pp. 339 - 343, http://dx.doi.org/10.1016/0167-577X(91)90113-K

Zhao J; Green MA, 1991, 'Optimized Antireflection Coatings for High-Efficiency Silicon Solar Cells', IEEE Transactions on Electron Devices, 38, pp. 1925 - 1934, http://dx.doi.org/10.1109/16.119035

Wang A; Zhao J; Green MA, 1990, '24% efficient silicon solar cells', Applied Physics Letters, 57, pp. 602 - 604, http://dx.doi.org/10.1063/1.103610

Zhao J; Wang A; Green MA, 1990, 'An optimized prismatic cover design for concentrator and nonconcentrator solar cells', Journal of Applied Physics, 68, pp. 1345 - 1350, http://dx.doi.org/10.1063/1.346705

Chin VWL; Storey JWV; Green MA, 1990, 'Characteristics of p-type PtSi Schottky diodes under reverse bias', Journal of Applied Physics, 68, pp. 4127 - 4132, http://dx.doi.org/10.1063/1.346254

Chin VWL; Green MA; Storey JWV, 1990, 'Correlation between current-voltage and capacitance-voltage Schottky barrier height on (100) and (110) GaAs and (110) InP surfaces', Journal of Applied Physics, 68, pp. 3470 - 3474, http://dx.doi.org/10.1063/1.347169

Green MA; Wenham SR, 1990, 'High efficiency silicon solar cells, present status', Optoelectronics Tokyo, 5, pp. 135 - 142

Sproul AB; Green MA; Zhao J, 1990, 'Improved value for the silicon intrinsic carrier concentration at 300 K', Applied Physics Letters, 57, pp. 255 - 257, http://dx.doi.org/10.1063/1.103707

Green MA, 1990, 'Intrinsic concentration, effective densities of states, and effective mass in silicon', Journal of Applied Physics, 67, pp. 2944 - 2954, http://dx.doi.org/10.1063/1.345414

Narayanan S; Wenham SR; Green MA, 1990, '17.8-Percent Efficiency Polycrystalline Silicon Solar Cells', IEEE Transactions on Electron Devices, 37, pp. 382 - 384, http://dx.doi.org/10.1109/16.46370

Green MA; Blakers AW; Zhao J; Milne AM; Wang A; Dai X, 1990, 'Characterization of 23-Percent Efficient Silicon Solar Cells', IEEE Transactions on Electron Devices, 37, pp. 331 - 336, http://dx.doi.org/10.1109/16.46361

Sproul AB; Green MA; Robinson AM, 1990, 'Computer-aided analysis of high efficiency laser-grooved silicon solar cells', Solar Cells, 28, pp. 233 - 240, http://dx.doi.org/10.1016/0379-6787(90)90057-C

Chin VWL; Green MA; Storey JWV, 1990, 'Evidence for multiple barrier heights in P-type PtSi Schottky-barrier diodes from I-V-T and photoresponse measurements', Solid State Electronics, 33, pp. 299 - 308, http://dx.doi.org/10.1016/0038-1101(90)90170-J

Zhao J; Wang A; Willison MR; Green MA, 1990, 'Improved soldering technique for concentrator solar cells', Solar Cells, 28, pp. 193 - 197, http://dx.doi.org/10.1016/0379-6787(90)90053-8

Soo Hong Lee ; Healy SA; Young TL; Green MA, 1990, 'Very-low-temperature liquid-phase epitaxial growth of silicon', Materials Letters, 9, pp. 53 - 56, http://dx.doi.org/10.1016/0167-577X(90)90150-K

Zolper JC; Narayanan S; Wenham SR; Green MA, 1989, '16.7% efficient, laser textured, buried contact polycrystalline silicon solar cell', Applied Physics Letters, 55, pp. 2363 - 2365, http://dx.doi.org/10.1063/1.102019

Blakers AW; Wang A; Milne AM; Zhao J; Green MA, 1989, '22.8% efficient silicon solar cell', Applied Physics Letters, 55, pp. 1363 - 1365, http://dx.doi.org/10.1063/1.101596

Green MA, 1989, 'Highlights of the Fourth International Photovoltaic Science and Engineering Conference (PVSEC-4)', Solar Cells, 27, pp. 3 - 10, http://dx.doi.org/10.1016/0379-6787(89)90012-4

Narayanan S; Green MA, 1989, 'Improvement in the open-circuit voltage and efficiency of silicon solar cells by rear aluminium treatment', Solar Cells, 26, pp. 329 - 334, http://dx.doi.org/10.1016/0379-6787(89)90092-6

Kuriański JM; Shanahan ST; Theden U; Green MA; Storey JWV, 1989, 'Optimization of the cavity for silicide Schottky infrared detectors', Solid State Electronics, 32, pp. 97 - 101, http://dx.doi.org/10.1016/0038-1101(89)90174-3

Chin VWL; Storey JWV; Green MA, 1989, 'P-type PtSi Schottky-diode barrier height determined from I-V measurement', Solid State Electronics, 32, pp. 475 - 478, http://dx.doi.org/10.1016/0038-1101(89)90029-4

Green MA, 1989, 'Solar cell research and development in Australia', Solar Cells, 26, pp. 1 - 11, http://dx.doi.org/10.1016/0379-6787(89)90062-8

Green MA; Zhao J; King DL, 1988, 'Sublinear current response in high-efficiency, high-resistivity silicon solar cells: Theory and experiment', Applied Physics Letters, 52, pp. 1361 - 1363, http://dx.doi.org/10.1063/1.99118

Guo WL; Moravvej-Farshi MK; Green MA, 1988, 'High temperature lifetesting of silicon metal-thin insulator-semiconductor heterojunction emitter bipolar transistors', Solid State Electronics, 31, pp. 1071 - 1075, http://dx.doi.org/10.1016/0038-1101(88)90407-8

Chong CM; Wenham SR; Green MA, 1988, 'High-efficiency, laser grooved, buried contact silicon solar cells', Applied Physics Letters, 52, pp. 407 - 409, http://dx.doi.org/10.1063/1.99453

Kurianski JM; Theden U; Green MA; Storey JWV, 1988, 'Novel 896-Element Infrared Schottky Detector Line Array', IEEE Electron Device Letters, 9, pp. 436 - 438, http://dx.doi.org/10.1109/55.6937

Chong CM; Green MA, 1987, 'LIMITING EFFICIENCY OF SILICON SOLAR CELLS UNDER HIGHLY CONCENTRATED SUNLIGHT.', IEEE Transactions on Electron Devices, ED-34

Green MA, 1987, 'HIGH EFFICIENCY SILICON SOLAR CELLS.', Journal of Electrical and Electronics Engineering, Australia, 7, pp. 184 - 189

Moravvej-Farshi MK; Green MA, 1987, 'Effects of Interfacial Oxide Layer on Short-Channel Polycrystalline Source and Drain MOSFET's', IEEE Electron Device Letters, 8, pp. 165 - 167, http://dx.doi.org/10.1109/EDL.1987.26589

Kuriański JM; Theden U; Green MA; Storey JWV, 1987, 'Full Schottky high density 2-D infrared charge coupled detector array', Solid State Electronics, 30, pp. 1341 - 1343, http://dx.doi.org/10.1016/0038-1101(87)90061-X

Campbell P; Green MA, 1987, 'Light trapping properties of pyramidally textured surfaces', Journal of Applied Physics, 62, pp. 243 - 249, http://dx.doi.org/10.1063/1.339189

Chong CM; Green MA, 1987, 'Limiting Efficiency of Silicon Solar Cells Under Highly Concentrated Sunlight', IEEE Transactions on Electron Devices, 34, pp. 2351 - 2352, http://dx.doi.org/10.1109/T-ED.1987.23243

Moravvej-Farshi MK; Green MA, 1987, 'Novel self-aligned polysilicon-gate MOSFETs with polysilicon source and drain', Solid State Electronics, 30, pp. 1053 - 1062, http://dx.doi.org/10.1016/0038-1101(87)90099-2

Green MA; Taouk M; Blakers AW; Narayanan S; Zhao J; Campbell P, 1986, '23.6% efficient low resistivity silicon concentrator solar cell', Applied Physics Letters, 49, pp. 194 - 195, http://dx.doi.org/10.1063/1.97167

Narayanan S; Wenham SR; Green MA, 1986, 'High efficiency polycrystalline silicon solar cells using phosphorus pretreatment', Applied Physics Letters, 48, pp. 873 - 875, http://dx.doi.org/10.1063/1.96644

MORAVVEJFARSHI MK; GUO WL; GREEN MA, 1986, 'IMPROVEMENTS IN CURRENT GAIN AND BREAKDOWN VOLTAGE OF SILICON MIS HETEROJUNCTION EMITTER TRANSISTORS', IEEE ELECTRON DEVICE LETTERS, 7, pp. 632 - 634, http://dx.doi.org/10.1109/EDL.1986.26500

MORAVVEJFARSHI MK; GREEN MA, 1986, 'NOVEL NMOS TRANSISTORS WITH NEAR-ZERO DEPTH CONDUCTOR THIN INSULATOR SEMICONDUCTOR (CIS) SOURCE AND DRAIN JUNCTIONS', IEEE ELECTRON DEVICE LETTERS, 7, pp. 474 - 476, http://dx.doi.org/10.1109/EDL.1986.26444

Blakers AW; Green MA, 1986, '20% efficiency silicon solar cells', Applied Physics Letters, 48, pp. 215 - 217, http://dx.doi.org/10.1063/1.96799

Green MA; Jianhua Z; Blakers AW; Taouk M; Narayanan S, 1986, '25-Percent efficient low-resistivity silicon concentrator solar cells', IEEE Electron Device Letters, 7, pp. 583 - 585, http://dx.doi.org/10.1109/EDL.1986.26481

Green MA, 1986, 'Crystalline and polycrystalline silicon tandem junction solar cells: Theoretical advantages', Solar Cells, 18, pp. 31 - 40, http://dx.doi.org/10.1016/0379-6787(86)90005-0

Moravvej-Farshi MK; Guo WL; Green MA, 1986, 'IMPROVEMENTS IN CURRENT GAIN AND BREAKDOWN VOLTAGE OF SILICON MIS HETEROJUNCTION EMITTER TRANSISTORS.', Electron device letters, EDL-7, pp. 632 - 634, http://dx.doi.org/10.1109/edl.1986.26500

Green MA; Blakers AW; Narayanan S; Taouk M, 1986, 'Improvements in silicon solar cell efficiency', Solar Cells, 17, pp. 75 - 83, http://dx.doi.org/10.1016/0379-6787(86)90060-8

Green MA; Rychcik M; Robins RG; Fane AG, 1986, 'New All-Vanadium Redox Flow Cell', Journal of the Electrochemical Society, 133, pp. 1057 - 1058, http://dx.doi.org/10.1149/1.2108706

Kuriański JM; Storey JWV, 1986, 'Novel High-Density Infrared Schottky Charge-Coupled Detector Array', IEEE Electron Device Letters, 7, pp. 140 - 141, http://dx.doi.org/10.1109/EDL.1986.26321

Moravvej-Farshi MK; Green MA, 1986, 'NOVEL NMOS TRANSISTORS WITH NEAR-ZERO DEPTH CONDUCTOR/THIN INSULATOR/SEMICONDUCTOR (CIS) SOURCE AND DRAIN JUNCTIONS.', Electron device letters, EDL-7, pp. 474 - 476, http://dx.doi.org/10.1109/edl.1986.26444

Campbell PR; Green MA, 1986, 'On “Intensity Enhancement in Textured Optical Sheets for Solar Cells”', IEEE Transactions on Electron Devices, 33, pp. 1834 - 1835, http://dx.doi.org/10.1109/T-ED.1986.22753

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