By Scientia Professor Michelle Yvonne Simmons

Journal articles

Schofield SR; Fisher AJ; Ginossar E; Lyding JW; Silver RM; Fei F; Namboodiri P; Wyrick J; Masteghin MG; Cox DC; Murdin BN; Clowes SK; Keizer JG; Simmons MY; Stemp H; Morello A; Voisin B; Rogge S; Wolkow RA; Livadaru L; Pitters J; Stock T; Curson NJ; Butera RE; Pavlova T; Jakob AMM; Spemann D; Räcke P; Schmidt-Kaler F; Jamieson DN; Pratiush U; Duscher G; Kalinin SV; Kazazis D; Constantinou P; Aeppli G; Ekinci Y; Owen JHG; Fowler E; Moheimani R; Randall J; Misra S; Ivie JA; Allemang C; Anderson EM; Bussmann E; Campbell Q; Gao X; Lu T-M; Schmucker SW, 2025, 'Roadmap on Atomic-scale Semiconductor Devices', Nano Futures, http://dx.doi.org/10.1088/2399-1984/ada901

Thorvaldson I; Poulos D; Moehle CM; Misha SH; Edlbauer H; Reiner J; Geng H; Voisin B; Jones MT; Donnelly MB; Peña LF; Hill CD; Myers CR; Keizer JG; Chung Y; Gorman SK; Kranz L; Simmons MY, 2025, 'Grover’s algorithm in a four-qubit silicon processor above the fault-tolerant threshold', Nature Nanotechnology, http://dx.doi.org/10.1038/s41565-024-01853-5

Krishnan R; Gan BY; Hsueh YL; Huq AMSE; Kenny J; Rahman R; Koh TS; Simmons MY; Weber B, 2024, 'Measurement of Enhanced Spin-Orbit Coupling Strength for Donor-Bound Electron Spins in Silicon', Advanced Materials, 36, http://dx.doi.org/10.1002/adma.202405916

Hsueh YL; Keith D; Chung Y; Gorman SK; Kranz L; Monir S; Kembrey Z; Keizer JG; Rahman R; Simmons MY, 2024, 'Engineering Spin-Orbit Interactions in Silicon Qubits at the Atomic-Scale', Advanced Materials, 36, http://dx.doi.org/10.1002/adma.202312736

Reiner J; Chung Y; Misha SH; Lehner C; Moehle C; Poulos D; Monir S; Charde KJ; Macha P; Kranz L; Thorvaldson I; Thorgrimsson B; Keith D; Hsueh YL; Rahman R; Gorman SK; Keizer JG; Simmons MY, 2024, 'High-fidelity initialization and control of electron and nuclear spins in a four-qubit register', Nature Nanotechnology, 19, pp. 605 - 611, http://dx.doi.org/10.1038/s41565-023-01596-9

Gorman SK; Simmons MY, 2024, 'High-fidelity initialization and control of multiple nuclear spin qubits in silicon', Nature Nanotechnology, 19, pp. 584 - 585, http://dx.doi.org/10.1038/s41565-024-01603-7

Kranz L; Osika EN; Monir S; Hsueh YL; Fricke L; Hile SJ; Chung Y; Keizer JG; Rahman R; Simmons MY, 2024, 'Exploiting Atomic Control to Show When Atoms Become Molecules', Advanced Functional Materials, 34, http://dx.doi.org/10.1002/adfm.202307285

Monir S; Osika EN; Gorman SK; Thorvaldson I; Hsueh YL; Macha P; Kranz L; Reiner J; Simmons MY; Rahman R, 2024, 'Impact of measurement backaction on nuclear spin qubits in silicon', Physical Review B, 109, http://dx.doi.org/10.1103/PhysRevB.109.035157

Tranter AD; Kranz L; Sutherland S; Keizer JG; Gorman SK; Buchler BC; Simmons MY, 2024, 'Machine Learning-Assisted Precision Manufacturing of Atom Qubits in Silicon', ACS Nano, http://dx.doi.org/10.1021/acsnano.4c00080

Munia MM; Monir S; Osika EN; Simmons MY; Rahman R, 2024, 'Superexchange coupling of donor qubits in silicon', Physical Review Applied, 21, http://dx.doi.org/10.1103/PhysRevApplied.21.014038

Jones MT; Monir MS; Krauth FN; Macha P; Hsueh YL; Worrall A; Keizer JG; Kranz L; Gorman SK; Chung Y; Rahman R; Simmons MY, 2023, 'Atomic Engineering of Molecular Qubits for High-Speed, High-Fidelity Single Qubit Gates', ACS Nano, 17, pp. 22601 - 22610, http://dx.doi.org/10.1021/acsnano.3c06668

Hogg MR; House MG; Pakkiam P; Simmons MY, 2023, 'Semiconductor-Quantum-Dot Modulator for Cryogenic Operation of Quantum Circuitry', Physical Review Applied, 20, http://dx.doi.org/10.1103/PhysRevApplied.20.034066

Simmons MY, 2023, 'Engineering Qubits in Silicon with Atomic Precision', Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 29, pp. 1362, http://dx.doi.org/10.1093/micmic/ozad067.698

Voisin B; Salfi J; St Médar DD; Johnson BC; McCallum JC; Simmons MY; Rogge S; St Medar DD, 2023, 'A solid-state quantum microscope for wavefunction control of an atom-based quantum dot device in silicon', Nature Electronics, 6, pp. 409 - 416, http://dx.doi.org/10.1038/s41928-023-00979-z

Donnelly MB; Munia MM; Keizer JG; Chung Y; Huq AMSE; Osika EN; Hsueh YL; Rahman R; Simmons MY, 2023, 'Multi-Scale Modeling of Tunneling in Nanoscale Atomically Precise Si:P Tunnel Junctions', Advanced Functional Materials, 33, http://dx.doi.org/10.1002/adfm.202214011

Hsueh YL; Kranz L; Keith D; Monir S; Chung Y; Gorman SK; Rahman R; Simmons MY, 2023, 'Hyperfine-mediated spin relaxation in donor-atom qubits in silicon', Physical Review Research, 5, http://dx.doi.org/10.1103/PhysRevResearch.5.023043

Kranz L; Gorman SK; Thorgrimsson B; Monir S; He Y; Keith D; Charde K; Keizer JG; Rahman R; Simmons MY, 2023, 'The Use of Exchange Coupled Atom Qubits as Atomic-Scale Magnetic Field Sensors', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202201625

Kranz L; Roche S; Gorman SK; Keizer JG; Simmons MY, 2023, 'High-Fidelity CNOT Gate for Donor Electron Spin Qubits in Silicon', Physical Review Applied, 19, http://dx.doi.org/10.1103/PhysRevApplied.19.024068

Hogg MR; Pakkiam P; Gorman SK; Timofeev AV; Chung Y; Gulati GK; House MG; Simmons MY, 2023, 'Single-Shot Readout of Multiple Donor Electron Spins with a Gate-Based Sensor', PRX Quantum, 4, http://dx.doi.org/10.1103/PRXQuantum.4.010319

Kranz L; Gorman SK; Thorgrimsson B; Monir S; He Y; Keith D; Charde K; Keizer JG; Rahman R; Simmons MY, 2023, 'The Use of Exchange Coupled Atom Qubits as Atomic‐Scale Magnetic Field Sensors (Adv. Mater. 6/2023)', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202370039

Keith D; Gorman SK; He Y; Kranz L; Simmons MY, 2022, 'Impact of charge noise on electron exchange interactions in semiconductors', npj Quantum Information, 8, http://dx.doi.org/10.1038/s41534-022-00523-5

Sarkar A; Hochstetter J; Kha A; Hu X; Simmons MY; Rahman R; Culcer D, 2022, 'Optimisation of electron spin qubits in electrically driven multi-donor quantum dots', npj Quantum Information, 8, http://dx.doi.org/10.1038/s41534-022-00646-9

Keith D; Chung Y; Kranz L; Thorgrimsson B; Gorman SK; Simmons MY, 2022, 'Ramped measurement technique for robust high-fidelity spin qubit readout', Science Advances, 8, http://dx.doi.org/10.1126/sciadv.abq0455

Osika EN; Gorman SK; Monir S; Hsueh YL; Borscz M; Geng H; Thorgrimsson B; Simmons MY; Rahman R, 2022, 'Shelving and latching spin readout in atom qubits in silicon', Physical Review B, 106, http://dx.doi.org/10.1103/PhysRevB.106.075418

Kiczynski M; Gorman SK; Geng H; Donnelly MB; Chung Y; He Y; Keizer JG; Simmons MY, 2022, 'Engineering topological states in atom-based semiconductor quantum dots', Nature, 606, pp. 694 - 699, http://dx.doi.org/10.1038/s41586-022-04706-0

Keith D; Gorman SK; Kranz L; He Y; Keizer JG; Broome MA; Simmons MY, 2022, 'Erratum: Benchmarking high fidelity single-shot readout of semiconductor qubits (New J. Phys. (2019) 21 (063011) DOI: 10.1088/1367-2630/ab242c/meta)', New Journal of Physics, 24, http://dx.doi.org/10.1088/1367-2630/ac7479

Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2022, 'Valley population of donor states in highly strained silicon', MATERIALS FOR QUANTUM TECHNOLOGY, 2, http://dx.doi.org/10.1088/2633-4356/ac5d1d

Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2022, 'Flopping-Mode Electric Dipole Spin Resonance in Phosphorus Donor Qubits in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054006

Osika EN; Kocsis S; Hsueh YL; Monir S; Chua C; Lam H; Voisin B; Simmons MY; Rogge S; Rahman R, 2022, 'Spin-Photon Coupling for Atomic Qubit Devices in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054007

Donnelly MB; Keizer JG; Chung Y; Simmons MY, 2021, 'Monolithic Three-Dimensional Tuning of an Atomically Defined Silicon Tunnel Junction', Nano Letters, 21, pp. 10092 - 10098, http://dx.doi.org/10.1021/acs.nanolett.1c03879

Fricke L; Hile SJ; Kranz L; Chung Y; He Y; Pakkiam P; House MG; Keizer JG; Simmons MY, 2021, 'Coherent control of a donor-molecule electron spin qubit in silicon', Nature Communications, 12, http://dx.doi.org/10.1038/s41467-021-23662-3

Kobayashi T; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov NV; Becker P; Pohl HJ; Simmons MY; Rogge S, 2021, 'Engineering long spin coherence times of spin–orbit qubits in silicon', Nature Materials, 20, pp. 38 - 42, http://dx.doi.org/10.1038/s41563-020-0743-3

Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2020, 'Valley interference and spin exchange at the atomic scale in silicon', Nature Communications, 11, http://dx.doi.org/10.1038/s41467-020-19835-1

Kranz L; Gorman SK; Thorgrimsson B; He Y; Keith D; Keizer JG; Simmons MY, 2020, 'Exploiting a Single-Crystal Environment to Minimize the Charge Noise on Qubits in Silicon', Advanced Materials, 32, http://dx.doi.org/10.1002/adma.202003361

Simmons M, 2020, 'Ask me anything: Michelle Simmons', PHYSICS WORLD, 33, pp. 55 - 55

Kranz L; Gorman SK; Thorgrimsson B; He Y; Keith D; Keizer JG; Simmons MY, 2020, 'Quantum Computing: Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon (Adv. Mater. 40/2020)', Advanced Materials, 32, http://dx.doi.org/10.1002/adma.202070298

Keith D; House MG; Donnelly MB; Watson TF; Weber B; Simmons MY, 2019, 'Single-Shot Spin Readout in Semiconductors Near the Shot-Noise Sensitivity Limit', Physical Review X, 9, pp. 041003, http://dx.doi.org/10.1103/PhysRevX.9.041003

He Y; Gorman SK; Keith D; Kranz L; Keizer JG; Simmons MY, 2019, 'A two-qubit gate between phosphorus donor electrons in silicon', Nature, 571, pp. 371 - 375, http://dx.doi.org/10.1038/s41586-019-1381-2

Keith D; Gorman SK; Kranz L; He Y; Keizer JG; Broome MA; Simmons MY, 2019, 'Benchmarking high fidelity single-shot readout of semiconductor qubits', New Journal of Physics, 21, pp. 063011, http://dx.doi.org/10.1088/1367-2630/ab242c

Koch M; Keizer JG; Pakkiam P; Keith D; House MG; Peretz E; Simmons MY, 2019, 'Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor', Nature Nanotechnology, 14, pp. 137 - 140, http://dx.doi.org/10.1038/s41565-018-0338-1

van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Laviéville R; Simmons MY; Rogge S, 2018, 'Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor', Science Advances, 4, http://dx.doi.org/10.1126/sciadv.aat9199

Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2018, 'Spin–orbit coupling in silicon for electrons bound to donors', npj Quantum Information, 4, http://dx.doi.org/10.1038/s41534-018-0111-1

Broome MA; Gorman SK; House MG; Hile SJ; Keizer JG; Keith D; Hill CD; Watson TF; Baker WJ; Hollenberg LCL; Simmons MY, 2018, 'Two-electron spin correlations in precision placed donors in silicon', Nature Communications, 9, pp. 980, http://dx.doi.org/10.1038/s41467-018-02982-x

Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, 'Single-Shot Single-Gate rf Spin Readout in Silicon', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.041032

Dooley P; Simmons M, 2018, 'I'll make quantum reign supreme', NEW SCIENTIST, 240, pp. 42 - 43, http://dx.doi.org/10.1016/S0262-4079(18)31998-5

Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2018, 'Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.031049

Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, 'Addressable electron spin resonance using donors and donor molecules in silicon', Science Advances, 4, pp. eaaq1459, http://dx.doi.org/10.1126/sciadv.aaq1459

Pakkiam P; House MG; Koch M; Simmons MY, 2018, 'Characterization of a Scalable Donor-Based Singlet-Triplet Qubit Architecture in Silicon', Nano Letters, 18, pp. 4081 - 4085, http://dx.doi.org/10.1021/acs.nanolett.8b00006

Gorman SK; Broome MA; House MG; Hile SJ; Keizer JG; Keith D; Watson TF; Baker WJ; Simmons MY, 2018, 'Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot', Applied Physics Letters, 112, pp. 243105, http://dx.doi.org/10.1063/1.5021500

Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2018, 'Two-electron states of a group-V donor in silicon from atomistic full configuration interactions', Physical Review B, 97, pp. 195301, http://dx.doi.org/10.1103/PhysRevB.97.195301

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