Select Publications

Journal articles

Tettamanzi GC;Hile SJ;House MG;Fuechsle M;Rogge S;Simmons MY, 2017, 'Correction to Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies.', ACS Nano, vol. 11, pp. 3420, http://dx.doi.org/10.1021/acsnano.6b08154

Gorman SK;He Y;House MG;Keizer JG;Keith D;Fricke L;Hile SJ;Broome MA;Simmons MY, 2017, 'Tunneling Statistics for Analysis of Spin-Readout Fidelity', Physical Review Applied, vol. 8, http://dx.doi.org/10.1103/PhysRevApplied.8.034019

Broome MA;Watson TF;Keith D;Gorman SK;House MG;Keizer JG;Hile SJ;Baker W;Simmons MY, 2017, 'High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon', Physical Review Letters, vol. 119, http://dx.doi.org/10.1103/PhysRevLett.119.046802

Shamim S;Mahapatra S;Scappucci G;Klesse WM;Simmons MY;Ghosh A, 2017, 'Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P ω-layers', Scientific Reports, vol. 7, http://dx.doi.org/10.1038/srep46670

Tettamanzi GC;Hile SJ;House MG;Fuechsle M;Rogge S;Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies', ACS Nano, vol. 11, pp. 2444 - 2451, http://dx.doi.org/10.1021/acsnano.6b06362

Cooil SP;Mazzola F;Klemm HW;Peschel G;Niu YR;Zakharov AA;Simmons MY;Schmidt T;Evans DA;Miwa JA;Wells JW, 2017, 'In Situ Patterning of Ultrasharp Dopant Profiles in Silicon', ACS Nano, vol. 11, pp. 1683 - 1688, http://dx.doi.org/10.1021/acsnano.6b07359

House MG;Bartlett I;Pakkiam P;Koch M;Peretz E;Van Der Heijden J;Kobayashi T;Rogge S;Simmons MY, 2016, 'High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation', Physical Review Applied, vol. 6, http://dx.doi.org/10.1103/PhysRevApplied.6.044016

Weber B;Simmons MY, 2016, 'Determining the quantum-coherent to semiclassical transition in atomic-scale quasi-one-dimensional metals', Physical Review B, vol. 94, http://dx.doi.org/10.1103/PhysRevB.94.081412

Shamim S;Weber B;Thompson DW;Simmons MY;Ghosh A, 2016, 'Ultralow-Noise Atomic-Scale Structures for Quantum Circuitry in Silicon', Nano Letters, vol. 16, pp. 5779 - 5784, http://dx.doi.org/10.1021/acs.nanolett.6b02513

Broome MA;Gorman SK;Keizer JG;Watson TF;Hile SJ;Baker WJ;Simmons MY, 2016, 'Mapping the chemical potential landscape of a triple quantum dot', Physical Review B, vol. 94, http://dx.doi.org/10.1103/PhysRevB.94.054314

Wang Y;Chen CY;Klimeck G;Simmons MY;Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques', Scientific Reports, vol. 6, http://dx.doi.org/10.1038/srep31830

Usman M;Bocquel J;Salfi J;Voisin B;Tankasala A;Rahman R;Simmons MY;Rogge S;Hollenberg LC L, 2016, 'Spatial metrology of dopants in silicon with exact lattice site precision', Nature Nanotechnology, vol. 11, pp. 763 - 768, http://dx.doi.org/10.1038/nnano.2016.83

Li T;Yeoh LA;Srinivasan A;Klochan O;Ritchie DA;Simmons MY;Sushkov OP;Hamilton AR, 2016, 'Erratum: Manifestation of a non-Abelian Berry phase in a p -type semiconductor system (Physical Review B - Condensed Matter and Materials Physics (2016) 93 (205424) DOI: 10.1103/PhysRevB.93.205424)', Physical Review B, vol. 93, http://dx.doi.org/10.1103/PhysRevB.93.239903

Gorman SK;Broome MA;Keizer JG;Watson TF;Hile SJ;Baker WJ;Simmons MY, 2016, 'Extracting inter-dot tunnel couplings between few donor quantum dots in silicon', New Journal of Physics, vol. 18, http://dx.doi.org/10.1088/1367-2630/18/5/053041

Li T;Yeoh LA;Srinavasan A;Klochan O;Ritchie DA;Simmons MY;Sushkov OP;Hamilton AR, 2016, 'Manifestation of a non-Abelian Berry phase in a p -type semiconductor system', Physical Review B, vol. 93, http://dx.doi.org/10.1103/PhysRevB.93.205424

Salfi J;Mol JA;Rahman R;Klimeck G;Simmons MY;Hollenberg LC L;Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, vol. 7, http://dx.doi.org/10.1038/ncomms11342

Kobayashi T;Van Der Heijden J;House MG;Hile SJ;Asshoff P;Gonzalez-Zalba MF;Vinet M;Simmons MY;Rogge S, 2016, 'Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system', Applied Physics Letters, vol. 108, http://dx.doi.org/10.1063/1.4945736

Warschkow O;Curson NJ;Schofield SR;Marks NA;Wilson HF;Radny MW;Smith PV;Reusch TC G;McKenzie DR;Simmons MY, 2016, 'Reaction paths of phosphine dissociation on silicon (001)', Journal of Chemical Physics, vol. 144, http://dx.doi.org/10.1063/1.4939124

Hill CD;Peretz E;Hile SJ;House MG;Fuechsle M;Rogge S;Simmons MY;Hollenberg LC L, 2015, 'A surface code quantum computer in silicon.', Sci Adv, vol. 1, pp. e1500707, http://dx.doi.org/10.1126/sciadv.1500707

Simmons M, 2015, 'A new horizon for quantum information', npj Quantum Information, vol. 1, http://dx.doi.org/10.1038/npjqi.2015.13

Watson TF;Weber B;Büch H;Fuechsle M;Simmons MY, 2015, 'Charge sensing of a few-donor double quantum dot in silicon', Applied Physics Letters, vol. 107, http://dx.doi.org/10.1063/1.4937576

Büch H;Fuechsle M;Baker W;House MG;Simmons MY, 2015, 'Quantum dot spectroscopy using a single phosphorus donor', Physical Review B - Condensed Matter and Materials Physics, vol. 92, http://dx.doi.org/10.1103/PhysRevB.92.235309

Keizer JG;Koelling S;Koenraad PM;Simmons MY, 2015, 'Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers', ACS Nano, vol. 9, pp. 12537 - 12541, http://dx.doi.org/10.1021/acsnano.5b06299

House MG;Kobayashi T;Weber B;Hile SJ;Watson TF;Van Der Heijden J;Rogge S;Simmons MY, 2015, 'Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots', Nature Communications, vol. 6, http://dx.doi.org/10.1038/ncomms9848

Watson TF;Weber B;House MG;Büch H;Simmons MY, 2015, 'High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D- Charge State', Physical Review Letters, vol. 115, http://dx.doi.org/10.1103/PhysRevLett.115.166806

Gorman SK;Broome MA;Baker WJ;Simmons MY, 2015, 'Impact of nuclear spin dynamics on electron transport through donors', Physical Review B - Condensed Matter and Materials Physics, vol. 92, http://dx.doi.org/10.1103/PhysRevB.92.125413

Hile SJ;House MG;Peretz E;Verduijn J;Widmann D;Kobayashi T;Rogge S;Simmons MY, 2015, 'Radio frequency reflectometry and charge sensing of a precision placed donor in silicon', Applied Physics Letters, vol. 107, http://dx.doi.org/10.1063/1.4929827

Scappucci G;Klesse WM;Yeoh LA;Carter DJ;Warschkow O;Marks NA;Jaeger DL;Capellini G;Simmons MY;Hamilton AR, 2015, 'Bottom-up assembly of metallic germanium', Scientific Reports, vol. 5, http://dx.doi.org/10.1038/srep12948

Keizer JG;McKibbin SR;Simmons MY, 2015, 'The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers', ACS Nano, vol. 9, pp. 7080 - 7084, http://dx.doi.org/10.1021/acsnano.5b01638

Usman M;Hill CD;Rahman R;Klimeck G;Simmons MY;Rogge S;Hollenberg LC L, 2015, 'Strain and electric field control of hyperfine interactions for donor spin qubits in silicon', Physical Review B - Condensed Matter and Materials Physics, vol. 91, http://dx.doi.org/10.1103/PhysRevB.91.245209

Mol JA;Salfi J;Rahman R;Hsueh Y;Miwa JA;Klimeck G;Simmons MY;Rogge S, 2015, 'Interface-induced heavy-hole/light-hole splitting of acceptors in silicon', Applied Physics Letters, vol. 106, http://dx.doi.org/10.1063/1.4921640

Ryu H;Lee S;Fuechsle M;Miwa JA;Mahapatra S;Hollenberg LC L;Simmons MY;Klimeck G, 2015, 'A tight-binding study of single-atom transistors', Small, vol. 11, pp. 374 - 381, http://dx.doi.org/10.1002/smll.201400724

Oberbeck L;Reusch TC G;Hallam T;Schofield SR;Curson NJ;Simmons MY, 2014, 'Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy', Applied Physics Letters, vol. 104, http://dx.doi.org/10.1063/1.4884654

Oberbeck L;Reusch TC G;Hallam T;Schofield SR;Curson NJ;Simmons MY, 2014, 'Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy', Applied Physics Letters, vol. 104, http://dx.doi.org/10.1063/1.48846541

Hsueh Y-L;Büch H;Tan Y;Wang Y;Hollenberg LC L;Klimeck G;Simmons MY;Rahman R, 2014, 'Spin-Lattice Relaxation Times of Single Donors and Donor Clusters in Silicon', Physical Review Letters, vol. 113, http://dx.doi.org/10.1103/PhysRevLett.113.246406

Weber B;Ryu H;Tan YH M;Klimeck G;Simmons MY, 2014, 'Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon Wires', Physical Review Letters, vol. 113, http://dx.doi.org/10.1103/PhysRevLett.113.246802

Yeoh LA;Srinivasan A;Klochan O;Winkler R;Zülicke U;Simmons MY;Ritchie DA;Pepper M;Hamilton AR, 2014, 'Noncollinear paramagnetism of a GaAs two-dimensional hole system', Physical Review Letters, vol. 113, http://dx.doi.org/10.1103/PhysRevLett.113.236401

Mazzola F;Edmonds MT;Høydalsvik K;Carter DJ;Marks NA;Cowie BC C;Thomsen L;Miwa J;Simmons MY;Wells JW, 2014, 'Determining the electronic confinement of a subsurface metallic state', ACS Nano, vol. 8, pp. 10223 - 10228, http://dx.doi.org/10.1021/nn5045239

Calandrini E;Ortolani M;Nucara A;Scappucci G;Klesse WM;Simmons MY;Di Gaspare L;De Seta M;Sabbagh D;Capellini G;Virgilio M;Baldassarre L, 2014, 'Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy', Journal of Optics (United Kingdom), vol. 16, http://dx.doi.org/10.1088/2040-8978/16/9/094010

Weber B;Tan YH M;Mahapatra S;Watson TF;Ryu H;Rahman R;Hollenberg LC L;Klimeck G;Simmons MY, 2014, 'Spin blockade and exchange in Coulomb-confined silicon double quantum dots', Nature Nanotechnology, vol. 9, pp. 430 - 435, http://dx.doi.org/10.1038/nnano.2014.63

Shamim S;Mahapatra S;Scappucci G;Klesse WM;Simmons MY;Ghosh A, 2014, 'Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium', Physical Review Letters, vol. 112, http://dx.doi.org/10.1103/PhysRevLett.112.236602

Salfi J;Mol JA;Rahman R;Klimeck G;Simmons MY;Hollenberg LC L;Rogge S, 2014, 'Spatially resolving valley quantum interference of a donor in silicon', Nature Materials, vol. 13, pp. 605 - 610, http://dx.doi.org/10.1038/nmat3941

Mazzola F;Polley CM;Miwa JA;Simmons MY;Wells JW, 2014, 'Disentangling phonon and impurity interactions in δ-doped Si(001)', Applied Physics Letters, vol. 104, http://dx.doi.org/10.1063/1.4874651

Watson TF;Weber B;Miwa JA;Mahapatra S;Heijnen RM P;Simmons MY, 2014, 'Transport in asymmetrically coupled donor-based silicon triple quantum dots', Nano Letters, vol. 14, pp. 1830 - 1835, http://dx.doi.org/10.1021/nl4045026

House MG;Peretz E;Keizer JG;Hile SJ;Simmons MY, 2014, 'Single-charge detection by an atomic precision tunnel junction', Applied Physics Letters, vol. 104, http://dx.doi.org/10.1063/1.4869032

McKibbin SR;Polley CM;Scappucci G;Keizer JG;Simmons MY, 2014, 'Low resistivity, super-saturation phosphorus-in-silicon monolayer doping', Applied Physics Letters, vol. 104, http://dx.doi.org/10.1063/1.4869111

Miwa JA;Warschkow O;Carter DJ;Marks NA;Mazzola F;Simmons MY;Wells JW, 2014, 'Valley splitting in a silicon quantum device platform', Nano Letters, vol. 14, pp. 1515 - 1519, http://dx.doi.org/10.1021/nl404738j

Lee WC T;McKibbin SR;Thompson DL;Xue K;Scappucci G;Bishop N;Celler GK;Carroll MS;Simmons MY, 2014, 'Lithography and doping in strained Si towards atomically precise device fabrication', Nanotechnology, vol. 25, http://dx.doi.org/10.1088/0957-4484/25/14/145302

Büch H;Mahapatra S;Rahman R;Morello A;Simmons MY, 2013, 'Spin readout and addressability of phosphorus-donor clusters in silicon', Nature Communications, vol. 4, http://dx.doi.org/10.1038/ncomms3017

Mattoni G;Klesse WM;Capellini G;Simmons MY;Scappucci G, 2013, 'Phosphorus Molecules on Ge(001): A Playground for Controlled n-Doping of Germanium at High Densities', ACS Nano, vol. 7, pp. 11310 - 11316, http://dx.doi.org/10.1021/nn4051634


Back to profile page