Select Publications

Books

Butcher MJ;Simmons MY, 2006, Basic properties of silicon surfaces, http://dx.doi.org/10.1142/9781860948053_0002

Simmons MY, 2002, Nanotechnology, Small things, Big Science, Original, Chapman and Hall

Wilson M;Kannangara K;Smith G;Simmons MY;Raguse B, 2002, Nanotechnology: Basic Science and Emerging Technologies, Original, University of New South Wales Press, Australia

Book Chapters

Fuechsle M;Simmons MY, 2013, 'Using scanning tunneling microscopy to realize atomic-scale silicon devices', in Single-Atom Nanoelectronics, pp. 61 - 88, http://dx.doi.org/10.4032/9789814316699

Fuechsle M;Simmons MY, 2013, 'Using Scanning Tunneling Microscopy to Realize Atomic-Scale Silicon Devices', in Prati E;Shinada T (ed.), SINGLE-ATOM NANOELECTRONICS, PAN STANFORD PUBLISHING PTE LTD, pp. 61 - 88, http://dx.doi.org/10.4032/9789814316699

Clarke WR;Simmons MY;Liang CT, 2011, 'Ballistic Transport in 1D GaAs/AlGaAs Heterostructures', in Comprehensive Semiconductor Science and Technology, pp. 279 - 325, http://dx.doi.org/10.1016/B978-0-44-453153-7.00082-1

Clarke WR;Simmons MY;Liang CT, 2011, 'Ballistic Transport in 1D GaAs/AlGaAs Heterostructures.', in Bhattacharya P (ed.), Comprehensive Semiconductor Science and Technology, Six-Volume Set, 1st Edition, edn. 1st, Elsevier Science, Amsterdam, pp. 281 - 325

Clarke WR;Liang CT;Simmons MY, 2010, 'Ballistic transport in 1D GaAs/AlGaAs heterostructures', in Bhattacharya P;Kamimura H;Fornari R (ed.), Comprehensive Semiconductor Science and Technology Volume 1: Semiconductors, edn. 1, Elsevier Science, pp. 4 - 47

Simmons MY;Barlow TW, 2009, 'Nanotechnology in Australia', in Emerging Nanotechnology Power: Nanotechnology R and D and Business Trends in the Asia Pacific Rim, pp. 37 - 57, http://dx.doi.org/10.1142/9789814261555_0002

Simmons MY;Butcher M, 2006, 'Basic properties of semiconductor surfaces', in Grutter P;Hofer W;Rosei F (ed.), Properties of Single Organic Molecules on Crystal Surfaces, edn. 1, Imperial College Press, UK, pp. 29 - 60

Simmons MY, 2001, 'Nanotechnology: Physics, Chemistry and Biology Unite at the Ultra-Small Scale', in Impact Science, edn. Original, Science Foundation for Physics, Australia, pp. 53 - 62

Simmons MY, 2001, 'Quantum Computing', in Impact Science, edn. Original, Science Foundation for Physics, Australia, pp. 43 - 52

Journal articles

Watson TF;Weber B;Hsueh YL;Hollenberg LC L;Rahman R;Simmons MY, 2017, 'Atomically engineered electron spin lifetimes of 30 s in silicon', Science Advances, vol. 3, http://dx.doi.org/10.1126/sciadv.1602811

Tettamanzi GC;Hile SJ;House MG;Fuechsle M;Rogge S;Simmons MY, 2017, 'Correction to Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies.', ACS Nano, vol. 11, pp. 3420, http://dx.doi.org/10.1021/acsnano.6b08154

Gorman SK;He Y;House MG;Keizer JG;Keith D;Fricke L;Hile SJ;Broome MA;Simmons MY, 2017, 'Tunneling Statistics for Analysis of Spin-Readout Fidelity', Physical Review Applied, vol. 8, http://dx.doi.org/10.1103/PhysRevApplied.8.034019

Broome MA;Watson TF;Keith D;Gorman SK;House MG;Keizer JG;Hile SJ;Baker W;Simmons MY, 2017, 'High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon', Physical Review Letters, vol. 119, http://dx.doi.org/10.1103/PhysRevLett.119.046802

Shamim S;Mahapatra S;Scappucci G;Klesse WM;Simmons MY;Ghosh A, 2017, 'Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P ω-layers', Scientific Reports, vol. 7, http://dx.doi.org/10.1038/srep46670

Tettamanzi GC;Hile SJ;House MG;Fuechsle M;Rogge S;Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies', ACS Nano, vol. 11, pp. 2444 - 2451, http://dx.doi.org/10.1021/acsnano.6b06362

Cooil SP;Mazzola F;Klemm HW;Peschel G;Niu YR;Zakharov AA;Simmons MY;Schmidt T;Evans DA;Miwa JA;Wells JW, 2017, 'In Situ Patterning of Ultrasharp Dopant Profiles in Silicon', ACS Nano, vol. 11, pp. 1683 - 1688, http://dx.doi.org/10.1021/acsnano.6b07359

House MG;Bartlett I;Pakkiam P;Koch M;Peretz E;Van Der Heijden J;Kobayashi T;Rogge S;Simmons MY, 2016, 'High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation', Physical Review Applied, vol. 6, http://dx.doi.org/10.1103/PhysRevApplied.6.044016

Weber B;Simmons MY, 2016, 'Determining the quantum-coherent to semiclassical transition in atomic-scale quasi-one-dimensional metals', Physical Review B, vol. 94, http://dx.doi.org/10.1103/PhysRevB.94.081412

Shamim S;Weber B;Thompson DW;Simmons MY;Ghosh A, 2016, 'Ultralow-Noise Atomic-Scale Structures for Quantum Circuitry in Silicon', Nano Letters, vol. 16, pp. 5779 - 5784, http://dx.doi.org/10.1021/acs.nanolett.6b02513

Broome MA;Gorman SK;Keizer JG;Watson TF;Hile SJ;Baker WJ;Simmons MY, 2016, 'Mapping the chemical potential landscape of a triple quantum dot', Physical Review B, vol. 94, http://dx.doi.org/10.1103/PhysRevB.94.054314

Wang Y;Chen CY;Klimeck G;Simmons MY;Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques', Scientific Reports, vol. 6, http://dx.doi.org/10.1038/srep31830

Usman M;Bocquel J;Salfi J;Voisin B;Tankasala A;Rahman R;Simmons MY;Rogge S;Hollenberg LC L, 2016, 'Spatial metrology of dopants in silicon with exact lattice site precision', Nature Nanotechnology, vol. 11, pp. 763 - 768, http://dx.doi.org/10.1038/nnano.2016.83

Li T;Yeoh LA;Srinivasan A;Klochan O;Ritchie DA;Simmons MY;Sushkov OP;Hamilton AR, 2016, 'Erratum: Manifestation of a non-Abelian Berry phase in a p -type semiconductor system (Physical Review B - Condensed Matter and Materials Physics (2016) 93 (205424) DOI: 10.1103/PhysRevB.93.205424)', Physical Review B, vol. 93, http://dx.doi.org/10.1103/PhysRevB.93.239903

Gorman SK;Broome MA;Keizer JG;Watson TF;Hile SJ;Baker WJ;Simmons MY, 2016, 'Extracting inter-dot tunnel couplings between few donor quantum dots in silicon', New Journal of Physics, vol. 18, http://dx.doi.org/10.1088/1367-2630/18/5/053041

Li T;Yeoh LA;Srinavasan A;Klochan O;Ritchie DA;Simmons MY;Sushkov OP;Hamilton AR, 2016, 'Manifestation of a non-Abelian Berry phase in a p -type semiconductor system', Physical Review B, vol. 93, http://dx.doi.org/10.1103/PhysRevB.93.205424

Salfi J;Mol JA;Rahman R;Klimeck G;Simmons MY;Hollenberg LC L;Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, vol. 7, http://dx.doi.org/10.1038/ncomms11342

Kobayashi T;Van Der Heijden J;House MG;Hile SJ;Asshoff P;Gonzalez-Zalba MF;Vinet M;Simmons MY;Rogge S, 2016, 'Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system', Applied Physics Letters, vol. 108, http://dx.doi.org/10.1063/1.4945736

Warschkow O;Curson NJ;Schofield SR;Marks NA;Wilson HF;Radny MW;Smith PV;Reusch TC G;McKenzie DR;Simmons MY, 2016, 'Reaction paths of phosphine dissociation on silicon (001)', Journal of Chemical Physics, vol. 144, http://dx.doi.org/10.1063/1.4939124

Hill CD;Peretz E;Hile SJ;House MG;Fuechsle M;Rogge S;Simmons MY;Hollenberg LC L, 2015, 'Quantum Computing: A surface code quantum computer in silicon', Science Advances, vol. 1, http://dx.doi.org/10.1126/sciadv.1500707

Simmons M, 2015, 'A new horizon for quantum information', npj Quantum Information, vol. 1, http://dx.doi.org/10.1038/npjqi.2015.13

Watson TF;Weber B;Büch H;Fuechsle M;Simmons MY, 2015, 'Charge sensing of a few-donor double quantum dot in silicon', Applied Physics Letters, vol. 107, http://dx.doi.org/10.1063/1.4937576

Büch H;Fuechsle M;Baker W;House MG;Simmons MY, 2015, 'Quantum dot spectroscopy using a single phosphorus donor', Physical Review B - Condensed Matter and Materials Physics, vol. 92, http://dx.doi.org/10.1103/PhysRevB.92.235309

Keizer JG;Koelling S;Koenraad PM;Simmons MY, 2015, 'Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers', ACS Nano, vol. 9, pp. 12537 - 12541, http://dx.doi.org/10.1021/acsnano.5b06299

House MG;Kobayashi T;Weber B;Hile SJ;Watson TF;Van Der Heijden J;Rogge S;Simmons MY, 2015, 'Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots', Nature Communications, vol. 6, http://dx.doi.org/10.1038/ncomms9848

Watson TF;Weber B;House MG;Büch H;Simmons MY, 2015, 'High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D- Charge State', Physical Review Letters, vol. 115, http://dx.doi.org/10.1103/PhysRevLett.115.166806

Gorman SK;Broome MA;Baker WJ;Simmons MY, 2015, 'Impact of nuclear spin dynamics on electron transport through donors', Physical Review B - Condensed Matter and Materials Physics, vol. 92, http://dx.doi.org/10.1103/PhysRevB.92.125413

Hile SJ;House MG;Peretz E;Verduijn J;Widmann D;Kobayashi T;Rogge S;Simmons MY, 2015, 'Radio frequency reflectometry and charge sensing of a precision placed donor in silicon', Applied Physics Letters, vol. 107, http://dx.doi.org/10.1063/1.4929827

Scappucci G;Klesse WM;Yeoh LA;Carter DJ;Warschkow O;Marks NA;Jaeger DL;Capellini G;Simmons MY;Hamilton AR, 2015, 'Bottom-up assembly of metallic germanium', Scientific Reports, vol. 5, http://dx.doi.org/10.1038/srep12948

Keizer JG;McKibbin SR;Simmons MY, 2015, 'The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers', ACS Nano, vol. 9, pp. 7080 - 7084, http://dx.doi.org/10.1021/acsnano.5b01638

Usman M;Hill CD;Rahman R;Klimeck G;Simmons MY;Rogge S;Hollenberg LC L, 2015, 'Strain and electric field control of hyperfine interactions for donor spin qubits in silicon', Physical Review B - Condensed Matter and Materials Physics, vol. 91, http://dx.doi.org/10.1103/PhysRevB.91.245209

Mol JA;Salfi J;Rahman R;Hsueh Y;Miwa JA;Klimeck G;Simmons MY;Rogge S, 2015, 'Interface-induced heavy-hole/light-hole splitting of acceptors in silicon', Applied Physics Letters, vol. 106, http://dx.doi.org/10.1063/1.4921640

Ryu H;Lee S;Fuechsle M;Miwa JA;Mahapatra S;Hollenberg LC L;Simmons MY;Klimeck G, 2015, 'A tight-binding study of single-atom transistors', Small, vol. 11, pp. 374 - 381, http://dx.doi.org/10.1002/smll.201400724

Oberbeck L;Reusch TC G;Hallam T;Schofield SR;Curson NJ;Simmons MY, 2014, 'Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy', Applied Physics Letters, vol. 104, http://dx.doi.org/10.1063/1.4884654

Oberbeck L;Reusch TC G;Hallam T;Schofield SR;Curson NJ;Simmons MY, 2014, 'Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy', Applied Physics Letters, vol. 104, http://dx.doi.org/10.1063/1.48846541

Hsueh Y-L;Büch H;Tan Y;Wang Y;Hollenberg LC L;Klimeck G;Simmons MY;Rahman R, 2014, 'Spin-Lattice Relaxation Times of Single Donors and Donor Clusters in Silicon', Physical Review Letters, vol. 113, http://dx.doi.org/10.1103/PhysRevLett.113.246406

Weber B;Ryu H;Tan YH M;Klimeck G;Simmons MY, 2014, 'Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon Wires', Physical Review Letters, vol. 113, http://dx.doi.org/10.1103/PhysRevLett.113.246802

Yeoh LA;Srinivasan A;Klochan O;Winkler R;Zülicke U;Simmons MY;Ritchie DA;Pepper M;Hamilton AR, 2014, 'Noncollinear paramagnetism of a GaAs two-dimensional hole system', Physical Review Letters, vol. 113, http://dx.doi.org/10.1103/PhysRevLett.113.236401


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