Select Publications

Books

Butcher MJ; Simmons MY, 2006, Basic properties of silicon surfaces, http://dx.doi.org/10.1142/9781860948053_0002

Simmons MY, 2002, Nanotechnology, Small things, Big Science, Original, Chapman and Hall

Wilson M; Kannangara K; Smith G; Simmons MY; Raguse B, 2002, Nanotechnology: Basic Science and Emerging Technologies, Original, University of New South Wales Press, Australia

Book Chapters

Tettamanzi GC, 2013, 'Orbital Structure and transport characteristics of single donors.', in Prati E; Shinada T (ed.), Single-Atom Nanoelectronics, CRC Press, http://dx.doi.org/10.4032/9789814316699

Fuechsle M; Simmons M, 2013, 'Using Scanning Tunneling Microscopy to Realize Atomic- Scale Silicon Devices', in Single-Atom Nanoelectronics, Pan Stanford Publishing, http://dx.doi.org/10.1201/b14792-5

Fuechsle M; Simmons MY, 2013, 'Using Scanning Tunneling Microscopy to Realize Atomic-Scale Silicon Devices', in Prati E; Shinada T (ed.), Single Atom Nanoelectronics, PAN STANFORD PUBLISHING PTE LTD, pp. 61 - 88, http://dx.doi.org/10.4032/9789814316699

Miwa JA; Simmons MY, 2012, 'Atomic-Scale Devices in Silicon by Scanning Tunneling Microscopy', in Advances in Atom and Single Molecule Machines, Springer Berlin Heidelberg, pp. 181 - 196, http://dx.doi.org/10.1007/978-3-642-28172-3_14

Clarke WR; Simmons MY; Liang CT, 2011, 'Ballistic Transport in 1D GaAs/AlGaAs Heterostructures', in Comprehensive Semiconductor Science and Technology, pp. 279 - 325, http://dx.doi.org/10.1016/B978-0-44-453153-7.00082-1

Clarke WR; Simmons MY; Liang CT, 2011, 'Ballistic Transport in 1D GaAs/AlGaAs Heterostructures.', in Bhattacharya P (ed.), Comprehensive Semiconductor Science and Technology, Six-Volume Set, 1st Edition, edn. 1st, Elsevier Science, Amsterdam, pp. 281 - 325

Clarke WR; Liang CT; Simmons MY, 2010, 'Ballistic transport in 1D GaAs/AlGaAs heterostructures', in Bhattacharya P; Kamimura H; Fornari R (ed.), Comprehensive Semiconductor Science and Technology Volume 1: Semiconductors, edn. 1, Elsevier Science, pp. 4 - 47

Simmons MY; Barlow TW, 2009, 'Nanotechnology in Australia', in Emerging Nanotechnology Power: Nanotechnology R and D and Business Trends in the Asia Pacific Rim, pp. 37 - 57, http://dx.doi.org/10.1142/9789814261555_0002

Simmons MY; Butcher M, 2006, 'Basic properties of semiconductor surfaces', in Grutter P; Hofer W; Rosei F (ed.), Properties of Single Organic Molecules on Crystal Surfaces, edn. 1, Imperial College Press, UK, pp. 29 - 60

Wiegers S; Bibow E; Lévy LP; Bayot V; Simmons M; Shayegan M, 2002, 'Magnetization and Orbital Properties of the Two-Dimensional Electron Gas in the Quantum Limit', in Exotic States in Quantum Nanostructures, Springer Netherlands, pp. 99 - 138, http://dx.doi.org/10.1007/978-94-015-9974-0_3

Simmons MY, 2001, 'Nanotechnology: Physics, Chemistry and Biology Unite at the Ultra-Small Scale', in Impact Science, edn. Original, Science Foundation for Physics, Australia, pp. 53 - 62

Simmons MY, 2001, 'Quantum Computing', in Impact Science, edn. Original, Science Foundation for Physics, Australia, pp. 43 - 52

Galaktionov EA; Savchenko AK; Safonov SS; Proskuryakov YY; Li L; Pepper M; Simmons MY; Ritchie DA; Linfield EH; Kvon ZD, 'Interactions in High-Mobility 2D Electron and Hole Systems', in NATO Science Series II: Mathematics, Physics and Chemistry, Kluwer Academic Publishers, pp. 349 - 370, http://dx.doi.org/10.1007/1-4020-2193-3_21

Journal articles

Keith D; Gorman SK; He Y; Kranz L; Simmons MY, 2022, 'Impact of charge noise on electron exchange interactions in semiconductors', npj Quantum Information, vol. 8, http://dx.doi.org/10.1038/s41534-022-00523-5

Kiczynski M; Gorman SK; Geng H; Donnelly MB; Chung Y; He Y; Keizer JG; Simmons MY, 2022, 'Engineering topological states in atom-based semiconductor quantum dots', Nature, vol. 606, pp. 694 - 699, http://dx.doi.org/10.1038/s41586-022-04706-0

Keith D; Gorman SK; Kranz L; He Y; Keizer JG; Broome MA; Simmons MY, 2022, 'Erratum: Benchmarking high fidelity single-shot readout of semiconductor qubits (New J. Phys. (2019) 21 (063011) DOI: 10.1088/1367-2630/ab242c/meta)', New Journal of Physics, vol. 24, http://dx.doi.org/10.1088/1367-2630/ac7479

Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2022, 'Valley population of donor states in highly strained silicon', Materials for Quantum Technology, vol. 2, pp. 025002 - 025002, http://dx.doi.org/10.1088/2633-4356/ac5d1d

Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2022, 'Flopping-Mode Electric Dipole Spin Resonance in Phosphorus Donor Qubits in Silicon', Physical Review Applied, vol. 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054006

Osika EN; Kocsis S; Hsueh YL; Monir S; Chua C; Lam H; Voisin B; Simmons MY; Rogge S; Rahman R, 2022, 'Spin-Photon Coupling for Atomic Qubit Devices in Silicon', Physical Review Applied, vol. 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054007

Donnelly MB; Keizer JG; Chung Y; Simmons MY, 2021, 'Monolithic Three-Dimensional Tuning of an Atomically Defined Silicon Tunnel Junction', Nano Letters, vol. 21, pp. 10092 - 10098, http://dx.doi.org/10.1021/acs.nanolett.1c03879

Fricke L; Hile SJ; Kranz L; Chung Y; He Y; Pakkiam P; House MG; Keizer JG; Simmons MY, 2021, 'Coherent control of a donor-molecule electron spin qubit in silicon', Nature Communications, vol. 12, http://dx.doi.org/10.1038/s41467-021-23662-3

Kobayashi T; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov NV; Becker P; Pohl HJ; Simmons MY; Rogge S, 2021, 'Engineering long spin coherence times of spin–orbit qubits in silicon', Nature Materials, vol. 20, pp. 38 - 42, http://dx.doi.org/10.1038/s41563-020-0743-3

Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2020, 'Valley interference and spin exchange at the atomic scale in silicon', Nature Communications, vol. 11, pp. 6124, http://dx.doi.org/10.1038/s41467-020-19835-1

Kranz L; Gorman SK; Thorgrimsson B; He Y; Keith D; Keizer JG; Simmons MY, 2020, 'Exploiting a Single-Crystal Environment to Minimize the Charge Noise on Qubits in Silicon', Advanced Materials, vol. 32, http://dx.doi.org/10.1002/adma.202003361

Kranz L; Gorman SK; Thorgrimsson B; He Y; Keith D; Keizer JG; Simmons MY, 2020, 'Quantum Computing: Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon (Adv. Mater. 40/2020)', Advanced Materials, vol. 32, pp. 2070298 - 2070298, http://dx.doi.org/10.1002/adma.202070298

Keith D; House MG; Donnelly MB; Watson TF; Weber B; Simmons MY, 2019, 'Single-Shot Spin Readout in Semiconductors Near the Shot-Noise Sensitivity Limit', Physical Review X, vol. 9, http://dx.doi.org/10.1103/PhysRevX.9.041003

嵩 小; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov N; Becker P; Pohl H-J; Simmons MY; Rogge S, 2019, 'シリコン中のアクセプタ不純物スピン状態の制御による長いコヒーレンス時間の実現', , pp. 265 - 265, http://dx.doi.org/10.11316/jpsgaiyo.73.2.0_265

He Y; Gorman SK; Keith D; Kranz L; Keizer JG; Simmons MY, 2019, 'A two-qubit gate between phosphorus donor electrons in silicon', Nature, vol. 571, pp. 371 - 375, http://dx.doi.org/10.1038/s41586-019-1381-2

Keith D; Gorman SK; Kranz L; He Y; Keizer JG; Broome MA; Simmons MY, 2019, 'Benchmarking high fidelity single-shot readout of semiconductor qubits', New Journal of Physics, vol. 21, http://dx.doi.org/10.1088/1367-2630/ab242c

Koch M; Keizer JG; Pakkiam P; Keith D; House MG; Peretz E; Simmons MY, 2019, 'Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor', Nature Nanotechnology, vol. 14, pp. 137 - 140, http://dx.doi.org/10.1038/s41565-018-0338-1

van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Laviéville R; Simmons MY; Rogge S, 2018, 'Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor', Science Advances, vol. 4, pp. eaat9199, http://dx.doi.org/10.1126/sciadv.aat9199

Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2018, 'Spin–orbit coupling in silicon for electrons bound to donors', npj Quantum Information, vol. 4, http://dx.doi.org/10.1038/s41534-018-0111-1

Broome MA; Gorman SK; House MG; Hile SJ; Keizer JG; Keith D; Hill CD; Watson TF; Baker WJ; Hollenberg LCL; Simmons MY, 2018, 'Two-electron spin correlations in precision placed donors in silicon', Nature Communications, vol. 9, http://dx.doi.org/10.1038/s41467-018-02982-x

Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, 'Single-Shot Single-Gate rf Spin Readout in Silicon', Physical Review X, vol. 8, http://dx.doi.org/10.1103/PhysRevX.8.041032

嵩 小; van der Heijden J; Salfi J; House MG; Johnson BC; McCallum JC; Riemann H; Abrosimov N; Becker P; Pohl H-J; Simmons MY; Rogge S, 2018, 'Spin Echo Study of Boron in 28Si at Millikelvin Temperature', , pp. 1023 - 1023, http://dx.doi.org/10.11316/jpsgaiyo.72.2.0_1023

Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2018, 'Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots', Physical Review X, vol. 8, http://dx.doi.org/10.1103/PhysRevX.8.031049

Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, 'Addressable electron spin resonance using donors and donor molecules in silicon', Science Advances, vol. 4, http://dx.doi.org/10.1126/sciadv.aaq1459

Pakkiam P; House MG; Koch M; Simmons MY, 2018, 'Characterization of a Scalable Donor-Based Singlet-Triplet Qubit Architecture in Silicon', Nano Letters, vol. 18, pp. 4081 - 4085, http://dx.doi.org/10.1021/acs.nanolett.8b00006

Gorman SK; Broome MA; House MG; Hile SJ; Keizer JG; Keith D; Watson TF; Baker WJ; Simmons MY, 2018, 'Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot', Applied Physics Letters, vol. 112, http://dx.doi.org/10.1063/1.5021500

Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2018, 'Two-electron states of a group-V donor in silicon from atomistic full configuration interactions', Physical Review B, vol. 97, http://dx.doi.org/10.1103/PhysRevB.97.195301

Simmons M, 2018, 'We must set the bar high and tell students we expect them to jump over it', Journal and Proceedings of the Royal Society of New South Wales, vol. 151, pp. 14 - 21

Gorman SK; He Y; House MG; Keizer JG; Keith D; Fricke L; Hile SJ; Broome MA; Simmons MY, 2017, 'Tunneling Statistics for Analysis of Spin-Readout Fidelity', Physical Review Applied, vol. 8, http://dx.doi.org/10.1103/PhysRevApplied.8.034019

Broome MA; Watson TF; Keith D; Gorman SK; House MG; Keizer JG; Hile SJ; Baker W; Simmons MY, 2017, 'High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon', Physical Review Letters, vol. 119, http://dx.doi.org/10.1103/PhysRevLett.119.046802

Shamim S; Mahapatra S; Scappucci G; Klesse WM; Simmons MY; Ghosh A, 2017, 'Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P ω-layers', Scientific Reports, vol. 7, http://dx.doi.org/10.1038/srep46670

Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies', ACS Nano, vol. 11, pp. 2444 - 2451, http://dx.doi.org/10.1021/acsnano.6b06362

Watson TF; Weber B; Hsueh YL; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Atomically engineered electron spin lifetimes of 30 s in silicon', Science Advances, vol. 3, http://dx.doi.org/10.1126/sciadv.1602811

Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies (vol 11, pg 2444, 2017)', ACS NANO, vol. 11, pp. 3420 - 3420, http://dx.doi.org/10.1021/acsnano.6b08154


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