By Associate Professor Rajib Rahman

Journal articles

Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2018, 'Two-electron states of a group-V donor in silicon from atomistic full configuration interactions', Physical Review B, 97, pp. 195301, http://dx.doi.org/10.1103/PhysRevB.97.195301

Ameen TA; Ilatikhameneh H; Tankasala A; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Rahman R; Klimeck G, 2018, 'Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot', Beilstein Journal of Nanotechnology, 9, pp. 1075 - 1084, http://dx.doi.org/10.3762/bjnano.9.99

Ilatikhameneh H; Ameen TA; Chen C; Klimeck G; Rahman R, 2018, 'Sensitivity Challenge of Steep Transistors', IEEE Transactions on Electron Devices, 65, pp. 1633 - 1639, http://dx.doi.org/10.1109/TED.2018.2808040

Ilatikhameneh H; Ameen T; Chen F; Sahasrabudhe H; Klimeck G; Rahman R, 2018, 'Dramatic impact of dimensionality on the electrostatics of P-N junctions and its sensing and switching applications', IEEE Transactions on Nanotechnology, 17, pp. 293 - 298, http://dx.doi.org/10.1109/TNANO.2018.2799960

Sahasrabudhe H; Novakovic B; Nakamura J; Fallahi S; Povolotskyi M; Klimeck G; Rahman R; Manfra MJ, 2018, 'Optimization of edge state velocity in the integer quantum Hall regime', Physical Review B, 97, http://dx.doi.org/10.1103/PhysRevB.97.085302

Huang JZ; Long P; Povolotskyi M; Ilatikhameneh H; Ameen TA; Rahman R; Rodwell MJW; Klimeck G, 2017, 'A Multiscale Modeling of Triple-Heterojunction Tunneling FETs', IEEE Transactions on Electron Devices, 64, pp. 2728 - 2735, http://dx.doi.org/10.1109/TED.2017.2690669

Ameen TA; Ilatikhameneh H; Huang JZ; Povolotskyi M; Rahman R; Klimeck G, 2017, 'Combination of Equilibrium and Nonequilibrium Carrier Statistics into an Atomistic Quantum Transport Model for Tunneling Heterojunctions', IEEE Transactions on Electron Devices, 64, pp. 2512 - 2518, http://dx.doi.org/10.1109/TED.2017.2690626

Rahman R; Ilatikhameneh H; Ameen T; Klimeck G, 2017, '(Invited) Energy Efficient Transistors with 2D Materials', ECS Meeting Abstracts, MA2017-01, pp. 990 - 990, http://dx.doi.org/10.1149/ma2017-01/16/990

Zheng C; Zhang Q; Weber B; Ilatikhameneh H; Chen F; Sahasrabudhe H; Rahman R; Li S; Chen Z; Hellerstedt J; Zhang Y; Duan WH; Bao Q; Fuhrer MS, 2017, 'Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures', ACS Nano, 11, pp. 2785 - 2793, http://dx.doi.org/10.1021/acsnano.6b07832

Watson TF; Weber B; Hsueh YL; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Atomically engineered electron spin lifetimes of 30 s in silicon', Science Advances, 3, http://dx.doi.org/10.1126/sciadv.1602811

Chen FW; Ilatikhameneh H; Ameen TA; Klimeck G; Rahman R, 2017, 'Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene', IEEE Electron Device Letters, 38, pp. 130 - 133, http://dx.doi.org/10.1109/LED.2016.2627538

Wang Y; Chen C-Y; Klimeck G; Simmons MY; Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques (vol 6, 31830, 2016)', SCIENTIFIC REPORTS, 6, http://dx.doi.org/10.1038/srep38120

Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LCL, 2016, 'Spatial metrology of dopants in silicon with exact lattice site precision', Nature Nanotechnology, 11, pp. 763 - 768, http://dx.doi.org/10.1038/nnano.2016.83

Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2016, 'Design rules for high performance tunnel transistors from 2-D materials', IEEE Journal of the Electron Devices Society, 4, pp. 260 - 265, http://dx.doi.org/10.1109/JEDS.2016.2568219

Wang Y; Chen CY; Klimeck G; Simmons MY; Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques', Scientific Reports, 6, http://dx.doi.org/10.1038/srep31830

Ilatikhameneh H; Ameen T; Novakovic B; Tan Y; Klimeck G; Rahman R, 2016, 'Saving Moore's Law Down to 1 nm Channels with Anisotropic Effective Mass', Scientific Reports, 6, http://dx.doi.org/10.1038/srep31501

Mohiyaddin FA; Kalra R; Laucht A; Rahman R; Klimeck G; Morello A, 2016, 'Transport of spin qubits with donor chains under realistic experimental conditions', Physical Review B, 94, http://dx.doi.org/10.1103/PhysRevB.94.045314

Ilatikhameneh H; Salazar RB; Klimeck G; Rahman R; Appenzeller J, 2016, 'From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of Tunneling', IEEE Transactions on Electron Devices, 63, pp. 2871 - 2878, http://dx.doi.org/10.1109/TED.2016.2565582

Ilatikhameneh H; Ameen TA; Klimeck G; Rahman R, 2016, 'Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots', IEEE Journal of Quantum Electronics, 52, http://dx.doi.org/10.1109/JQE.2016.2573959

Ameen TA; Ilatikhameneh H; Klimeck G; Rahman R, 2016, 'Few-layer phosphorene: An ideal 2D material for tunnel transistors', Scientific Reports, 6, http://dx.doi.org/10.1038/srep28515

Chen FW; Ilatikhameneh H; Klimeck G; Chen Z; Rahman R, 2016, 'Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET', IEEE Journal of the Electron Devices Society, 4, pp. 124 - 128, http://dx.doi.org/10.1109/JEDS.2016.2539919

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, 7, http://dx.doi.org/10.1038/ncomms11342

Ilatikhameneh H; Klimeck G; Rahman R, 2016, 'Can Homojunction Tunnel FETs Scale below 10 nm?', IEEE Electron Device Letters, 37, pp. 115 - 118, http://dx.doi.org/10.1109/LED.2015.2501820

Wang Y; Tankasala A; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2016, 'Highly tunable exchange in donor qubits in silicon', npj Quantum Information, 2, http://dx.doi.org/10.1038/npjqi.2016.8

Chu T; Ilatikhameneh H; Klimeck G; Rahman R; Chen Z, 2015, 'Electrically Tunable Bandgaps in Bilayer MoS2', Nano Letters, 15, pp. 8000 - 8007, http://dx.doi.org/10.1021/acs.nanolett.5b03218

Li W; Sharmin S; Ilatikhameneh H; Rahman R; Lu Y; Wang J; Yan X; Seabaugh A; Klimeck G; Jena D; Fay P, 2015, 'Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors', IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 1, pp. 28 - 34, http://dx.doi.org/10.1109/JXCDC.2015.2426433

Ilatikhameneh H; Tan Y; Novakovic B; Klimeck G; Rahman R; Appenzeller J, 2015, 'Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials', IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 1, pp. 12 - 18, http://dx.doi.org/10.1109/JXCDC.2015.2423096

Salazar RB; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2015, 'A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations', Journal of Applied Physics, 118, http://dx.doi.org/10.1063/1.4934682

Ilatikhameneh H; Ameen TA; Klimeck G; Appenzeller J; Rahman R, 2015, 'Dielectric Engineered Tunnel Field-Effect Transistor', IEEE Electron Device Letters, 36, pp. 1097 - 1100, http://dx.doi.org/10.1109/LED.2015.2474147

Tosi G; Mohiyaddin FA; Tenberg S; Rahman R; Klimeck G; Morello A, 2015, 'Silicon quantum processor with robust long-distance qubit couplings', arxiv, http://arxiv.org/pdf/1509.08538v1.pdf

Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2015, 'Scaling Theory of Electrically Doped 2D Transistors', IEEE Electron Device Letters, 36, pp. 726 - 728, http://dx.doi.org/10.1109/LED.2015.2436356

Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, 'Strain and electric field control of hyperfine interactions for donor spin qubits in silicon', Physical Review B - Condensed Matter and Materials Physics, 91, pp. 245209, http://dx.doi.org/10.1103/PhysRevB.91.245209

Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, 'Interface-induced heavy-hole/light-hole splitting of acceptors in silicon', Applied Physics Letters, 106, pp. 203110, http://dx.doi.org/10.1063/1.4921640

Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2015, 'Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/154207

Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, 'Spatially resolved resonant tunneling on single atoms in silicon', Journal of Physics Condensed Matter, 27, http://dx.doi.org/10.1088/0953-8984/27/15/154203

Laucht A; Muhonen J; Mohiyaddin F; Kalra R; Dehollain JP; Freer S; Hudson FE; Veldhorst M; Rahman R; Klimeck G; Itoh KM; Jamieson DN; McCallum JC; Dzurak A; Morello A, 2015, 'Electrically controlling single-spin qubits in a continuous microwave field', Science Advances, http://dx.doi.org/10.1126/sciadv.1500022

Neupane MR; Rahman R; Lake RK, 2015, 'Effect of strain on the electronic and optical properties of Ge-Si dome shaped nanocrystals', Physical Chemistry Chemical Physics, 17, pp. 2484 - 2493, http://dx.doi.org/10.1039/c4cp03711a

Hsueh Y-L; Büch H; Tan Y; Wang Y; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R; Buch H, 2014, 'Spin-Lattice Relaxation Times of Single Donors and Donor Clusters in Silicon', Physical Review Letters, 113, pp. 246406, http://dx.doi.org/10.1103/PhysRevLett.113.246406

Pla JJ; Mohiyaddin FA; Tan KY; Dehollain JP; Rahman R; Klimeck G; Jamieson DN; Dzurak AS; Morello A, 2014, 'Coherent control of a single Si 29 nuclear spin qubit', Physical Review Letters, 113, http://dx.doi.org/10.1103/PhysRevLett.113.246801

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, 'Spatially resolving valley quantum interference of a donor in silicon', Nature Materials, 13, pp. 605 - 610, http://dx.doi.org/10.1038/nmat3941

Weber B; Tan YHM; Mahapatra S; Watson TF; Ryu H; Rahman R; Hollenberg LCL; Klimeck G; Simmons MY, 2014, 'Spin blockade and exchange in Coulomb-confined silicon double quantum dots', Nature Nanotechnology, 9, pp. 430 - 435, http://dx.doi.org/10.1038/nnano.2014.63

Nguyen KT; Lilly MP; Nielsen E; Bishop N; Rahman R; Young R; Wendt J; Dominguez J; Pluym T; Stevens J; Lu TM; Muller R; Carroll MS, 2013, 'Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot', Nano Letters, 13, pp. 5785 - 5790, http://dx.doi.org/10.1021/nl4020759

Tettamanzi G, 2013, 'Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade (vol 107, 136602, 2011)', Physical Review Letters, 110, pp. 49901 - 049901, http://dx.doi.org/10.1103/PhysRevLett.110.049901

Mohiyaddin FA; Rahman R; Kalra R; Klimeck ; Hollenberg ; Pla JJ; Dzurak AS; Morello A, 2013, 'Noninvasive spatial metrology of single-atom devices', Nano Letters, 13, pp. 1903 - 1909, http://dx.doi.org/10.1021/nl303863s

Buch H; Mahapatra S; Rahman R; Morello A; Simmons MY, 2013, 'Spin readout and addressability of phosphorus-donor clusters in silicon', Nature communications, 4, pp. Article number: 2017, http://dx.doi.org/10.1038/ncomms3017

Nielsen E; Rahman R; Muller RP, 2012, 'A many-electron tight binding method for the analysis of quantum dot systems', Journal of Applied Physics, 112, http://dx.doi.org/10.1063/1.4759256

Neupane MR; Lake RK; Rahman R, 2012, 'Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores', Journal of Applied Physics, 112, http://dx.doi.org/10.1063/1.4739715

Witzel WM; Rahman R; Carroll MS, 2012, 'Nuclear spin induced decoherence of a quantum dot in Si confined at a SiGe interface: Decoherence dependence on 73Ge', Physical Review B - Condensed Matter and Materials Physics, 85, http://dx.doi.org/10.1103/PhysRevB.85.205312

Rahman R; Nielsen E; Muller RP; Carroll MS, 2012, 'Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric', Physical Review B - Condensed Matter and Materials Physics, 85, http://dx.doi.org/10.1103/PhysRevB.85.125423

Neupane MR; Lake RK; Rahman R, 2011, 'Core size dependence of the confinement energies, barrier heights, and hole lifetimes in Ge-core/Si-shell nanocrystals', Journal of Applied Physics, 110, http://dx.doi.org/10.1063/1.3642970

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