By Associate Professor Rajib Rahman

Preprints

Ilatikhameneh H; Ameen TA; Klimeck G; Appenzeller J; Rahman R, 2015, Dielectric Engineered Tunnel Field-Effect Transistor, http://dx.doi.org/10.48550/arxiv.1508.00453

Wang YE; Tankasala A; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2015, Engineering inter-qubit exchange coupling between donor bound electrons in silicon, http://dx.doi.org/10.48550/arxiv.1507.08009

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2015, Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon, http://dx.doi.org/10.48550/arxiv.1507.06125

Salazar RB; Ilatikhameneh H; Rahman R; Klimeck G; Appenzeller J, 2015, A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations, http://dx.doi.org/10.48550/arxiv.1506.00077

Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon, http://dx.doi.org/10.48550/arxiv.1504.06370

Ilatikhameneh H; Klimeck G; Appenzeller J; Rahman R, 2015, Scaling Theory of Electrically Doped 2D Transistors, http://dx.doi.org/10.48550/arxiv.1504.03387

Laucht A; Muhonen JT; Mohiyaddin FA; Kalra R; Dehollain JP; Freer S; Hudson FE; Veldhorst M; Rahman R; Klimeck G; Itoh KM; Jamieson DN; McCallum JC; Dzurak AS; Morello A, 2015, Electrically controlling single spin qubits in a continuous microwave field, http://dx.doi.org/10.48550/arxiv.1503.05985

Ameen T; Ilatikhameneh H; Hsueh Y; Charles J; Fonseca J; Povolotskyi M; Kim JO; Krishna S; Allen MS; Allen JW; Wenner BR; Rahman R; Klimeck G, 2015, Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots, http://dx.doi.org/10.48550/arxiv.1502.07726

Ilatikhameneh H; Tan Y; Novakovic B; Klimeck G; Rahman R; Appenzeller J, 2015, Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials, http://dx.doi.org/10.48550/arxiv.1502.01760

Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, Interface-induced heavy-hole/light-hole splitting of acceptors in silicon, http://dx.doi.org/10.48550/arxiv.1501.05669

Voisin B; Salfi J; Bocquel J; Rahman R; Rogge S, 2015, Spatially resolved resonant tunneling on single atoms in silicon, http://dx.doi.org/10.48550/arxiv.1501.05042

Hsueh Y-L; Büch H; Tan Y; Wang Y; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2015, Spin-lattice relaxation times of single donors and donor clusters in silicon, http://dx.doi.org/10.48550/arxiv.1501.04089

Usman M; Rahman R; Salfi J; Bocquel J; Voisin B; Rogge S; Klimeck G; Hollenberg LLC, 2014, Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory, http://dx.doi.org/10.48550/arxiv.1410.1951

Pla JJ; Mohiyaddin FA; Tan KY; Dehollain JP; Rahman R; Klimeck G; Jamieson DN; Dzurak AS; Morello A, 2014, Coherent Control of a Single Silicon-29 Nuclear Spin Qubit, http://dx.doi.org/10.48550/arxiv.1408.1347

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, Spatially Resolving Valley Quantum Interference of a Donor in Silicon, http://dx.doi.org/10.48550/arxiv.1403.4648

Nielsen E; Rahman R; Muller RP, 2012, A many-electron tight binding method for the analysis of quantum dot systems, http://dx.doi.org/10.48550/arxiv.1202.4931

Rahman R; Nielsen E; Muller RP; Carroll MS, 2011, Voltage controlled exchange energies of a two electron silicon double quantum dot with and without charge defects in the dielectric, http://dx.doi.org/10.48550/arxiv.1112.4025

Lansbergen GP; Rahman R; Tettamanzi GC; Verduijn J; Hollenberg LCL; Klimeck G; Rogge S, 2011, Dopant metrology in advanced FinFETs, http://dx.doi.org/10.48550/arxiv.1111.4238

Witzel WM; Rahman R; Carroll MS, 2011, SiGe/Si quantum dot electron spin decoherence dependence on $^{73}$Ge, http://dx.doi.org/10.48550/arxiv.1110.4143

Rahman R; Lansbergen GP; Verduijn J; Tettamanzi GC; Park SH; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2011, Electric field reduced charging energies and two-electron bound excited states of single donors in silicon, http://dx.doi.org/10.48550/arxiv.1107.2701

Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, Engineered valley-orbit splittings in quantum confined nanostructures in silicon, http://dx.doi.org/10.48550/arxiv.1102.5311

Lansbergen GP; Rahman R; Verduijn J; Tettamanzi GC; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2010, Lifetime enhanced transport in silicon due to spin and valley blockade, http://dx.doi.org/10.48550/arxiv.1008.1381

Rahman R; Muller RP; Levy JE; Carroll MS; Klimeck G; Greentree AD; Hollenberg LCL, 2010, Coherent electron transport by adiabatic passage in an imperfect donor chain, http://dx.doi.org/10.48550/arxiv.1008.1494

Rahman R; Park SH; Klimeck G; Hollenberg LCL, 2009, Stark tuning of the charge states of a two-donor molecule in silicon, http://dx.doi.org/10.48550/arxiv.0907.3929

Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg LCL, 2009, Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors, http://dx.doi.org/10.48550/arxiv.0905.3200

Rahman R; Lansbergen GP; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg LCL, 2009, Orbital Stark effect and quantum confinement transition of donors in silicon, http://dx.doi.org/10.48550/arxiv.0904.4281

Rahman R; Park SH; Cole JH; Greentree AD; Muller RP; Klimeck G; Hollenberg LCL, 2009, Atomistic simulations of adiabatic coherent electron transport in triple donor systems, http://dx.doi.org/10.48550/arxiv.0903.1142

Park SH; Rahman R; Klimeck G; Hollenberg LCL, 2009, Mapping donor electron wave function deformations at sub-Bohr orbit resolution, http://dx.doi.org/10.48550/arxiv.0902.1515

Ahmed S; Kharche N; Rahman R; Usman M; Lee S; Ryu H; Bae H; Clark S; Haley B; Naumov M; Saied F; Korkusinski M; Kennel R; McLennan M; Boykin TB; Klimeck G, 2009, Multimillion Atom Simulations with NEMO 3-D, http://dx.doi.org/10.48550/arxiv.0901.1890

Rahman R; Wellard CJ; Bradbury FR; Prada M; Cole JH; Klimeck G; Hollenberg LCL, 2007, High precision quantum control of single donor spins in silicon, http://dx.doi.org/10.48550/arxiv.0705.2079

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