Select Publications
Journal articles
2011, 'Erratum: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon (Physical Review B - Condensed Matter and Materials Physics (2011) 83 (195323))', Physical Review B - Condensed Matter and Materials Physics, 83, http://dx.doi.org/10.1103/PhysRevB.83.239904
,2011, 'Stark tuning of the charge states of a two-donor molecule in silicon', Nanotechnology, 22, http://dx.doi.org/10.1088/0957-4484/22/22/225202
,2011, 'Electric field reduced charging energies and two-electron bound excited states of single donors in silicon', Physical Review B, 84, pp. 115458-1 - 115458-7, http://dx.doi.org/10.1103/PhysRevB.84.115428
,2011, 'Engineered valley-orbit splittings in quantum-confined nanostructures in silicon', Physical Review B, 83, pp. 195323-1 - 195323-5, http://dx.doi.org/10.1103/PhysRevB.83.195323
,2011, 'Lifetime-enhanced transport in silicon due to spin and valley blockade', Physical Review Letters, 107, pp. 136602-1 - 136602-5, http://dx.doi.org/10.1103/PhysRevLett.107.136602
,2010, 'Coherent electron transport by adiabatic passage in an imperfect donor chain', Physical Review B - Condensed Matter and Materials Physics, 82, http://dx.doi.org/10.1103/PhysRevB.82.155315
,2009, 'Mapping donor electron wave function deformations at a sub-bohr orbit resolution', Physical Review Letters, 103, http://dx.doi.org/10.1103/PhysRevLett.103.106802
,2009, 'Atomistic simulations of adiabatic coherent electron transport in triple donor systems', Physical Review B - Condensed Matter and Materials Physics, 80, http://dx.doi.org/10.1103/PhysRevB.80.035302
,2009, 'Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors', Physical Review - Section B - Condensed Matter, 80, pp. 155301-1 - 155301-5, http://dx.doi.org/10.1103/PhysRevB.80.155301
,2009, 'Orbital Stark effect and quantum confinement transition of donors in silicon', Physical Review - Section B - Condensed Matter, 80, pp. 165314-1 - 165314-10, http://dx.doi.org/10.1103/PhysRevB.80.165314
,2008, 'Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D', Journal of Computational Electronics, 7, pp. 297 - 300, http://dx.doi.org/10.1007/s10825-008-0223-5
,2008, 'Atomistic understanding of a single gated dopant atom in a MOSFET', Materials Research Society Symposium Proceedings, 1067, pp. 12 - 17, http://dx.doi.org/10.1557/proc-1067-b03-07
,2008, 'Level spectrum of a single gated arsenic donor in a three terminal geometry', Materials Research Society Symposium Proceedings, 1117, pp. 1 - 6, http://dx.doi.org/10.1557/proc-1117-j01-03
,2008, 'Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET', Nature Physics, 4, pp. 656 - 661, http://dx.doi.org/10.1038/nphys994
,2007, 'Atomistic simulation of realistically sized nanodevices using NEMO 3-D - Part I: Models and benchmarks', IEEE Transactions on Electron Devices, 54, pp. 2079 - 2089, http://dx.doi.org/10.1109/TED.2007.902879
,2007, 'High precision quantum control of single donor spins in silicon', Physical Review Letters, 99, http://dx.doi.org/10.1103/PhysRevLett.99.036403
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