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Preprints

Zhang L; Luo J-W; Saraiva AL; Koiller B; Zunger A, 2013, Genetic Design of Enhanced Valley Splitting towards a Spin Qubit in Silicon, http://dx.doi.org/10.48550/arxiv.1303.4932

Baena A; Saraiva AL; Koiller B; Calderón MJ, 2012, Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface, http://dx.doi.org/10.48550/arxiv.1203.6245

Culcer D; Saraiva AL; Koiller B; Hu X; Sarma SD, 2012, Valley-based noise-resistant quantum computation using Si quantum dots, http://dx.doi.org/10.48550/arxiv.1107.0003

Saraiva AL; Calderón MJ; Capaz RB; Hu X; Sarma SD; Koiller B, 2011, Intervalley coupling for interface-bound electrons in silicon: An effective mass study, http://dx.doi.org/10.48550/arxiv.1006.3338

Saraiva AL; Koiller B; Friesen M, 2010, Extended interface states enhance valley splitting in Si/SiO2, http://dx.doi.org/10.48550/arxiv.1009.4842

Saraiva AL; Calderón MJ; Hu X; Sarma SD; Koiller B, 2009, Physical mechanisms of interface-mediated intervalley coupling in Si, http://dx.doi.org/10.48550/arxiv.0901.4702

Calderon MJ; Saraiva A; Koiller B; Sarma SD, 2009, Quantum control and manipulation of donor electrons in Si-based quantum computing, http://dx.doi.org/10.48550/arxiv.0809.3660

Saraiva AL; Calderon MJ; Koiller B, 2007, Reliability of the Heitler-London approach for the exchange coupling between electrons in semiconductor nanostructures, http://dx.doi.org/10.48550/arxiv.0706.3354

Rahman MM; Vahapoglu E; Chan KW; Tanttu T; Dash A; Huang JY; Yianni S; Chenniappan V; Cifuentes JD; Hudson F; Escott CC; Lee YK; Stuyck ND; Laucht A; Morello A; Saraiva A; Cole JH; Dzurak AS; Lim WH, Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices, http://dx.doi.org/10.21203/rs.3.rs-9297493/v1


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