Select Publications
Journal articles
2023, 'Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform', Nano Letters, 23, pp. 1261 - 1266, http://dx.doi.org/10.1021/acs.nanolett.2c04417
,2023, 'On-demand electrical control of spin qubits', Nature Nanotechnology, 18, pp. 131 - 136, http://dx.doi.org/10.1038/s41565-022-01280-4
,2023, 'Jellybean Quantum Dots in Silicon for Qubit Coupling and On-Chip Quantum Chemistry', Advanced Materials, http://dx.doi.org/10.1002/adma.202208557
,2022, 'Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits', Advanced Functional Materials, 32, http://dx.doi.org/10.1002/adfm.202105488
,2021, 'A High-Sensitivity Charge Sensor for Silicon Qubits above 1 K', Nano Letters, 21, pp. 6328 - 6335, http://dx.doi.org/10.1021/acs.nanolett.1c01003
,2020, 'Single-electron operation of a silicon-CMOS 2 × 2 quantum dot array with integrated charge sensing', Nano Letters, 20, pp. 7882 - 7888, http://dx.doi.org/10.1021/acs.nanolett.0c02397
,2010, 'Electron tunnel rates in a donor-silicon single electron transistor hybrid', Physical Review - Section B - Condensed Matter, 81, pp. 235318, http://dx.doi.org/10.1103/PhysRevB.81.235318
,2010, 'Resonant tunnelling features in quantum dots', Nanotechnology, 21, pp. 274018, http://dx.doi.org/10.1088/0957-4484/21/27/274018
,2010, 'Single-shot readout of an electron spin in silicon', Nature, 467, pp. 687 - 691, http://dx.doi.org/10.1038/nature09392
,2009, 'Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon', Physical Review - Section B - Condensed Matter, 80, pp. 081307-1 - 081307-4, http://dx.doi.org/10.1103/PhysRevB.80.081307
,2008, 'Gate-controlled charge transfer in Si:P Double quantum dots', Nanotechnology, 19, pp. 195402 - 195496
,2007, 'Charge state control and relaxation in an atomically doped silicon device', Nano Letters, 7, pp. 2000 - 2003, http://dx.doi.org/10.1021/nl070797t
,2007, 'Scaling of ion implanted Si:P single electron devices', Nanotechnology, 18, pp. 235401 - 235405, http://dx.doi.org/10.1088/0957-4484/18/23/235401
,2005, 'Modelling single electron transfer in Si : P double quantum dots', Nanotechnology, 16, pp. 74 - 81
,Conference Papers
2011, 'Independent control of dot occupancy and reservoir electron density in a one-electron quantum dot', in AIP Conference Proceedings, pp. 349 - 350, http://dx.doi.org/10.1063/1.3666397
,Patents
2019, Control and Readout of Electron or Hole Spin, Patent No. 2248157
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