By Dr Chris Escott

Journal articles

Jin IK; Kumar K; Rendell MJ; Huang JY; Escott CC; Hudson FE; Lim WH; Dzurak AS; Hamilton AR; Liles SD, 2023, 'Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform', Nano Letters, 23, pp. 1261 - 1266, http://dx.doi.org/10.1021/acs.nanolett.2c04417

Gilbert W; Tanttu T; Lim WH; Feng MK; Huang JY; Cifuentes JD; Serrano S; Mai PY; Leon RCC; Escott CC; Itoh KM; Abrosimov NV; Pohl HJ; Thewalt MLW; Hudson FE; Morello A; Laucht A; Yang CH; Saraiva A; Dzurak AS, 2023, 'On-demand electrical control of spin qubits', Nature Nanotechnology, 18, pp. 131 - 136, http://dx.doi.org/10.1038/s41565-022-01280-4

Wang Z; Feng MK; Serrano S; Gilbert W; Leon RCC; Tanttu T; Mai P; Liang D; Huang JY; Su Y; Lim WH; Hudson FE; Escott CC; Morello A; Yang CH; Dzurak AS; Saraiva A; Laucht A, 2023, 'Jellybean Quantum Dots in Silicon for Qubit Coupling and On-Chip Quantum Chemistry', Advanced Materials, http://dx.doi.org/10.1002/adma.202208557

Saraiva A; Lim WH; Yang CH; Escott CC; Laucht A; Dzurak AS, 2022, 'Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits', Advanced Functional Materials, 32, http://dx.doi.org/10.1002/adfm.202105488

Huang JY; Lim WH; Leon RCC; Yang CH; Hudson FE; Escott CC; Saraiva A; Dzurak AS; Laucht A, 2021, 'A High-Sensitivity Charge Sensor for Silicon Qubits above 1 K', Nano Letters, 21, pp. 6328 - 6335, http://dx.doi.org/10.1021/acs.nanolett.1c01003

Gilbert W; Saraiva A; Lim WH; Yang CH; Laucht A; Bertrand B; Rambal N; Hutin L; Escott CC; Vinet M; Dzurak AS, 2020, 'Single-electron operation of a silicon-CMOS 2 × 2 quantum dot array with integrated charge sensing', Nano Letters, 20, pp. 7882 - 7888, http://dx.doi.org/10.1021/acs.nanolett.0c02397

Huebl H; Nugroho C; Morello A; Escott CC; Eriksson M; Yang C; Jamieson DN; Clark RG; Dzurak A, 2010, 'Electron tunnel rates in a donor-silicon single electron transistor hybrid', Physical Review - Section B - Condensed Matter, 81, pp. 235318, http://dx.doi.org/10.1103/PhysRevB.81.235318

Escott CC; Zwanenburg FA; Morello A, 2010, 'Resonant tunnelling features in quantum dots', Nanotechnology, 21, pp. 274018, http://dx.doi.org/10.1088/0957-4484/21/27/274018

Morello A; Pla J; Zwanenburg FA; Chan KW; Tan K; Huebl H; Mottonen M; Nugroho C; Yang C; Van donkeelar J; Alves A; Jamieson DN; Escott CC; Hollenberg L; Clark RG; Dzurak A, 2010, 'Single-shot readout of an electron spin in silicon', Nature, 467, pp. 687 - 691, http://dx.doi.org/10.1038/nature09392

Morello A; Escott CC; Huebl H; Willems Van Beveren LH; Hollenberg L; Jamieson DN; Dzurak A; Clark RG, 2009, 'Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon', Physical Review - Section B - Condensed Matter, 80, pp. 081307-1 - 081307-4, http://dx.doi.org/10.1103/PhysRevB.80.081307

Hudson FE; Ferguson AJ; Escott CC; Yang C; Jamieson DN; Clark RG; Dzurak A, 2008, 'Gate-controlled charge transfer in Si:P Double quantum dots', Nanotechnology, 19, pp. 195402 - 195496

Andresen SE; Brenner R; Wellard CJ; Yang C; Hopf T; Escott CC; Dzurak A; Jamieson DN; Hollenberg L; Clark RG, 2007, 'Charge state control and relaxation in an atomically doped silicon device', Nano Letters, 7, pp. 2000 - 2003, http://dx.doi.org/10.1021/nl070797t

Escott CC; Hudson FE; Chan VC; Petersson KD; Dzurak A; Clark RG, 2007, 'Scaling of ion implanted Si:P single electron devices', Nanotechnology, 18, pp. 235401 - 235405, http://dx.doi.org/10.1088/0957-4484/18/23/235401

Lee KH; Greentree AD; Escott CC; Dzurak A; Clark RG; Dinale J, 2005, 'Modelling single electron transfer in Si : P double quantum dots', Nanotechnology, 16, pp. 74 - 81

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