Select Publications

Journal articles

Nguyen HT; Rougieux FE; Baker-Finch SC; MacDonald D, 2015, 'Impact of carrier profile and rear-side reflection on photoluminescence spectra in planar crystalline silicon wafers at different temperatures', IEEE Journal of Photovoltaics, 5, pp. 77 - 81, http://dx.doi.org/10.1109/JPHOTOV.2014.2359737

Sun C; Rougieux FE; Macdonald D, 2014, 'Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon', Journal of Applied Physics, 115, http://dx.doi.org/10.1063/1.4881497

Rougieux FE; MacDonald D, 2014, 'Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.4870002

Zheng P; Rougieux FE; MacDonald D; Cuevas A, 2014, 'Measurement and parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level', IEEE Journal of Photovoltaics, 4, pp. 560 - 565, http://dx.doi.org/10.1109/JPHOTOV.2013.2294755

Hameiri Z; Rougieux F; Sinton R; Trupke T, 2014, 'Contactless determination of the carrier mobility sum in silicon wafers using combined photoluminescence and photoconductance measurements', Applied Physics Letters, 104, pp. 073506, http://dx.doi.org/10.1063/1.4865804

Nguyen HT; Rougieux FE; Mitchell B; Macdonald D, 2014, 'Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence', Journal of Applied Physics, 115, pp. 043710, http://dx.doi.org/10.1063/1.4862912

Forster M; Wagner P; Degoulange J; Einhaus R; Galbiati G; Rougieux FE; Cuevas A; Fourmond E, 2014, 'Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells', Solar Energy Materials and Solar Cells, 120, pp. 390 - 395, http://dx.doi.org/10.1016/j.solmat.2013.06.014

Rougieux FE; Grant NE; Macdonald D, 2013, 'Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers', Physica Status Solidi - Rapid Research Letters, 7, pp. 616 - 618, http://dx.doi.org/10.1002/pssr.201308053

Lim SY; Rougieux FE; Macdonald D, 2013, 'Boron-oxygen defect imaging in p-type Czochralski silicon', Applied Physics Letters, 103, http://dx.doi.org/10.1063/1.4819096

Forster M; Rougieux FE; Cuevas A; Dehestru B; Thomas A; Fourmond E; Lemiti M, 2013, 'Incomplete Ionization and Carrier Mobility in Compensated $p$-Type and $n$-Type Silicon', 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, pp. 1 - 6

Forster M; Rougieux FE; Cuevas A; Dehestru B; Thomas A; Fourmond E; Lemiti M, 2013, 'Incomplete ionization and carrier mobility in compensated p-type and n-type silicon', IEEE Journal of Photovoltaics, 3, pp. 108 - 113, http://dx.doi.org/10.1109/JPHOTOV.2012.2210032

MacDonald D; Phang SP; Rougieux FE; Lim SY; Paterson D; Howard DL; De Jonge MD; Ryan CG, 2012, 'Iron-rich particles in heavily contaminated multicrystalline silicon wafers and their response to phosphorus gettering', Semiconductor Science and Technology, 27, http://dx.doi.org/10.1088/0268-1242/27/12/125016

Forster M; Cuevas A; Fourmond E; Rougieux FE; Lemiti M, 2012, 'Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon', Journal of Applied Physics, 111, http://dx.doi.org/10.1063/1.3686151

Forster M; Fourmond E; Rougieux FE; Cuevas A; Gotoh R; Fujiwara K; Uda S; Lemiti M, 2012, 'Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron', Applied Physics Letters, 100, http://dx.doi.org/10.1063/1.3680205

Rougieux FE; Zheng P; Thiboust M; Tan J; Grant NE; MacDonald DH; Cuevas A, 2012, 'A contactless method for determining the carrier mobility sum in silicon wafers', IEEE Journal of Photovoltaics, 2, pp. 41 - 46, http://dx.doi.org/10.1109/JPHOTOV.2011.2175705

Rougieux FE; Forster M; MacDonald D; Cuevas A; Lim B; Schmidt J, 2011, 'Recombination activity and impact of the boron-oxygen-related defect in compensated N-type silicon', IEEE Journal of Photovoltaics, 1, pp. 54 - 58, http://dx.doi.org/10.1109/JPHOTOV.2011.2165698

Rougieux FE; Lim B; Schmidt J; Forster M; MacDonald D; Cuevas A, 2011, 'Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon', Journal of Applied Physics, 110, http://dx.doi.org/10.1063/1.3633492

Tan J; MacDonald D; Rougieux F; Cuevas A, 2011, 'Accurate measurement of the formation rate of iron-boron pairs in silicon', Semiconductor Science and Technology, 26, http://dx.doi.org/10.1088/0268-1242/26/5/055019

MacDonald D; Rougieux F; Mansoulie Y; Tan J; Paterson D; Howard DL; De Jonge MD; Ryan CG, 2010, 'Scanning X-ray fluorescence microspectroscopy of metallic impurities in solar-grade silicon', Physica Status Solidi (A) Applications and Materials Science, 207, pp. 1807 - 1810, http://dx.doi.org/10.1002/pssa.201026137

Rougieux FE; MacDonald D; Cuevas A; Ruffell S; Schmidt J; Lim B; Knights AP, 2010, 'Electron and hole mobility reduction and Hall factor in phosphorus-compensated p -type silicon', Journal of Applied Physics, 108, http://dx.doi.org/10.1063/1.3456076

Rougieux FE; MacDonald D; McIntosh KR; Cuevas A, 2010, 'Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon', Semiconductor Science and Technology, 25, http://dx.doi.org/10.1088/0268-1242/25/5/055009

MacDonald D; Rougieux F; Cuevas A; Lim B; Schmidt J; Di Sabatino M; Geerligs LJ, 2009, 'Light-induced boron-oxygen defect generation in compensated p -type Czochralski silicon', Journal of Applied Physics, 105, http://dx.doi.org/10.1063/1.3121208

Conference Papers

Rougieux FE; Hossain MA; Hoex B, 2023, 'Density functional theory to calculate accurate defect energy levels in silicon', in AIP Conference Proceedings, http://dx.doi.org/10.1063/5.0141286

Zhou Z; Juhl MK; Vaqueiro-Contreras M; Rougieux F; Coletti G, 2022, 'Deep Level Transient Spectroscopy Study of Float-zone Silicon Degradation under Light and Elevated Temperature', in AIP Conference Proceedings, http://dx.doi.org/10.1063/5.0089221

Zhou Z; Vaqueiro-Contreras M; Juhl MK; Rougieux F, 2021, 'Electronic Properties of the Boron-oxygen Defect Precursor in Silicon', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 269 - 271, http://dx.doi.org/10.1109/PVSC43889.2021.9519027

Jafari S; Zhu Y; Rougieux F; De Guzman JA; Markevich V; Peaker A; Hameiri Z, 2020, 'Boron-oxygen-related traps in Czochralski grown silicon', Online, presented at Asia Pacific Solar Research Conference, Online, 30 November 2020

Jafari S; Zhu Y; Rougieux F; De Guzman JAT; Markevich VP; Peaker AR; Hameiri Z, 2020, 'Boron-oxygen related light-induced degradation of Si solar cells: Transformation between minority carrier trapping and recombination active centers', in Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers (IEEE), Virtual, pp. 0689 - 0692, presented at 47th IEEE Photovoltaics Specialists Conference, Virtual, 15 June 2020 - 21 August 2020, http://dx.doi.org/10.1109/PVSC45281.2020.9300371

Siriwardhana M; Rougieux FE; MacDonald D, 2020, 'Defect luminescence from thermal donors in silicon: Impact of dopant type and thermal donor concentration', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2652 - 2654, http://dx.doi.org/10.1109/PVSC45281.2020.9300685

Rougieux F; Sun C; Juhl M, 2020, 'The Boron-Oxygen Defect: Does its Concentration Really Depends on the Boron/Dopant Concentration?', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2522 - 2524, http://dx.doi.org/10.1109/PVSC45281.2020.9300431

Jafari S; Zhu Y; Rougieux F; Hameiri Z, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Canberra, presented at Asia-Pacific Solar Research Conference, Canberra, 03 December 2019

Jafari S; Zhu Y; Rougieux F; Hameiri Z, 2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Marseille, France, presented at European Photovoltaic Solar Energy Conference and Exhibition, Marseille, France, 09 September 2019 - 13 September 2019

Chen D; Hamer P; Kim M; Mullins J; Sen C; Khan M; Oshima T; Abe H; Liu S; Ciesla A; Chan C; Chen R; Rougieux F; Zhou Z; Wright B; Varshney U; Vicari Stefani B; Soeriyadi A; Vargas Castrillon C; Samadi A; Hameiri Z; zhang X; Jin H; Qi W; Abbott M; Chong C; Peaker A; Hallam B, 2019, 'Will LeTID remain a commercial problem? Evaluating the solutions and a possible root cause. (LeTID仍是一个商业难题吗?根源分析和问题解决)', Wuxi, China, presented at 18th Issue PV WE CLASS-Crystalline Silicon Advanced Technology and Materials Forum, Wuxi, China, 24 April 2019 - 24 May 2019, http://dx.doi.org/10.26190/unsworks/27317

Zhu Y; Rougieux F; Grant N; Mullins J; Ann De Guzman J; Murphy J; Markevich V; Coletti G; Peaker A; Hameiri Z, 2019, 'New insights into the thermally activated defects in n-type float-zone silicon', Leuven, presented at 9th International Conference on Silicon Photovoltaics, Leuven, 08 April 2019 - 10 April 2019

Chen D; Hamer P; Ciesla A; Chan C; Chen R; Rougieux F; Liu S; Kim M; Samadi A; Wright B; Vargas C; Zhang X; Hameiri Z; Hao J; Wenham S; Abbott M; Hallam B, 2019, 'Hydrogen-Induced Degradation: An explanation of Light-and Elevated Temperature-Induced Degradation Mechanisms in n-and p-type Silicon', Leuven, Belgium, presented at 9thInternational Conference on Crystalline Silicon Photovoltaics 2019, Leuven, Belgium, 08 April 2019, http://dx.doi.org/10.26190/unsworks/27902

Rougieux FE; Sun C; Zhu Y; MacDonald DH, 2018, 'Accurate defect recombination parameters: What are the limitations of current analyses?', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 2520 - 2523, http://dx.doi.org/10.1109/PVSC.2018.8547585

Basnet R; Weigand W; Yu ZJ; Sun C; Phang SP; Rougieux FE; Einhaus R; Degoulange J; Holman Z; Macdonald D, 2018, 'Impact of Tabula Rasa and Phosphorus Diffusion Gettering on 21% Heterojunction Solar Cells Based on n-Type Czochralski-Grown Upgrade Metallurgical-Grade Silicon', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 1687 - 1691, http://dx.doi.org/10.1109/PVSC.2018.8548218

Siriwardhana M; Macdonald D; Heinz FD; Rougieux FE, 2018, 'Slow minority carrier trapping and de-trapping in Czochralski silicon: Influence of thermal donors and the doping density', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 3312 - 3314, http://dx.doi.org/10.1109/PVSC.2018.8547946

Juhl MK; Heinz FD; Coletti G; MacDonald D; Rougieux FE; Schindle F; Niewelt T; Schubert MC, 2018, 'An Open Source Based Repository for Defects in Silicon', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers (IEEE), pp. 328 - 332, presented at 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 10 June 2018 - 15 June 2018, http://dx.doi.org/10.1109/PVSC.2018.8547621

Juhl MK; Heinz FD; Coletti G; Macdonald D; Rougieux FE; Schindle F; Niewelt T; Schubert MC, 2018, 'An Open Source Based Repository For Defects in Silicon', in 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), IEEE, HI, Waikoloa, pp. 0328 - 0332, presented at 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC) / A Joint Conference of 45th IEEE PVSC / 28th PVSEC / 34th EU PVSEC, HI, Waikoloa, 10 June 2018 - 15 June 2018, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000469200400077&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

Rougieux F; Nguyen H; Maconald D; Mitchell B; Falster R, 2017, 'Growth of oxygen precipitates and dislocation in Cz silicon: Impact on the minority carrier lifetime', WIP-Renewable Energies, Munich, Germany, Amsterdam, presented at 35th European Photovoltaic Solar Energy Conference, Amsterdam, 24 September 2017 - 28 September 2017

Shen D; Sun C; Zheng P; Macdonald D; Rougieux F, 2016, 'Carrier induced degradation in compensated n-type silicon solar cells', Singapore, presented at 26th Photovoltaic Science and Engineering Conference, Singapore, 24 October 2016 - 28 October 2016

Sun C; Nguyen HT; Rougieux FE; Macdonald D, 2016, 'Characterization of Cu and Ni Precipitates in n- and p-type Czochralski-grown Silicon by Photoluminescence', in Energy Procedia, pp. 880 - 885, http://dx.doi.org/10.1016/j.egypro.2016.07.097

Zheng P; Rougieux FE; Samundsett C; Yang X; Wan Y; Degoulange J; Einhaus R; Rivat P; MacDonald D, 2016, 'Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell', in Energy Procedia, pp. 434 - 442, http://dx.doi.org/10.1016/j.egypro.2016.07.124

Grant NE; Rougieux FE; Macdonald D, 2016, 'Low temperature activation of grown-in defects limiting the lifetime of high purity n-type float-zone silicon wafers', in Solid State Phenomena, pp. 120 - 125, http://dx.doi.org/10.4028/www.scientific.net/SSP.242.120

Rougieux FE; Grant NE; Macdonald D; Murphy JD, 2015, 'Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?', in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, http://dx.doi.org/10.1109/PVSC.2015.7355687

Macdonald D; Liu A; Nguyen HT; Lim SY; Rougieux F, 2015, 'Physical Modelling of Luminescence Spectra from Crystalline Silicon', WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 31st European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 14 September 2015 - 18 September 2015

Nguyen HT; Rougieux FE; Wang F; Macdonald D, 2015, 'Effects of Solar Cell Processing Steps on Dislocation Luminescence in Multicrystalline Silicon', in Energy Procedia, pp. 619 - 625, http://dx.doi.org/10.1016/j.egypro.2015.07.089

Sun C; Liu A; Rougieux FE; MacDonald D, 2015, 'Lifetime Spectroscopy and Hydrogenation of Chromium in n- and p-type Cz Silicon', in Energy Procedia, pp. 646 - 650, http://dx.doi.org/10.1016/j.egypro.2015.07.092

Rougieux F; Samundsett C; Zheng P; Fong K; Macdonald D, 2014, 'Towards high efficiency UMG silicon solar cells', Kyoto, presented at 24th Photovoltaic Science and Engineering Conference, Kyoto, Japan,, Kyoto, 23 October 2014 - 27 October 2014

Zheng P; Rougieux FE; Macdonald D; Cuevas A, 2014, 'Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon', in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, pp. 129 - 134, http://dx.doi.org/10.1109/PVSC.2014.6925391


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