Select Publications
Journal articles
2015, 'Impact of carrier profile and rear-side reflection on photoluminescence spectra in planar crystalline silicon wafers at different temperatures', IEEE Journal of Photovoltaics, 5, pp. 77 - 81, http://dx.doi.org/10.1109/JPHOTOV.2014.2359737
,2014, 'Reassessment of the recombination parameters of chromium in n- and p-type crystalline silicon and chromium-boron pairs in p-type crystalline silicon', Journal of Applied Physics, 115, http://dx.doi.org/10.1063/1.4881497
,2014, 'Reading data stored in the state of metastable defects in silicon using band-band photoluminescence: Proof of concept and physical limits to the data storage density', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.4870002
,2014, 'Measurement and parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level', IEEE Journal of Photovoltaics, 4, pp. 560 - 565, http://dx.doi.org/10.1109/JPHOTOV.2013.2294755
,2014, 'Contactless determination of the carrier mobility sum in silicon wafers using combined photoluminescence and photoconductance measurements', Applied Physics Letters, 104, pp. 073506, http://dx.doi.org/10.1063/1.4865804
,2014, 'Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence', Journal of Applied Physics, 115, pp. 043710, http://dx.doi.org/10.1063/1.4862912
,2014, 'Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells', Solar Energy Materials and Solar Cells, 120, pp. 390 - 395, http://dx.doi.org/10.1016/j.solmat.2013.06.014
,2013, 'Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers', Physica Status Solidi - Rapid Research Letters, 7, pp. 616 - 618, http://dx.doi.org/10.1002/pssr.201308053
,2013, 'Boron-oxygen defect imaging in p-type Czochralski silicon', Applied Physics Letters, 103, http://dx.doi.org/10.1063/1.4819096
,2013, 'Incomplete Ionization and Carrier Mobility in Compensated $p$-Type and $n$-Type Silicon', 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2, pp. 1 - 6
,2013, 'Incomplete ionization and carrier mobility in compensated p-type and n-type silicon', IEEE Journal of Photovoltaics, 3, pp. 108 - 113, http://dx.doi.org/10.1109/JPHOTOV.2012.2210032
,2012, 'Iron-rich particles in heavily contaminated multicrystalline silicon wafers and their response to phosphorus gettering', Semiconductor Science and Technology, 27, http://dx.doi.org/10.1088/0268-1242/27/12/125016
,2012, 'Impact of incomplete ionization of dopants on the electrical properties of compensated p-type silicon', Journal of Applied Physics, 111, http://dx.doi.org/10.1063/1.3686151
,2012, 'Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron', Applied Physics Letters, 100, http://dx.doi.org/10.1063/1.3680205
,2012, 'A contactless method for determining the carrier mobility sum in silicon wafers', IEEE Journal of Photovoltaics, 2, pp. 41 - 46, http://dx.doi.org/10.1109/JPHOTOV.2011.2175705
,2011, 'Recombination activity and impact of the boron-oxygen-related defect in compensated N-type silicon', IEEE Journal of Photovoltaics, 1, pp. 54 - 58, http://dx.doi.org/10.1109/JPHOTOV.2011.2165698
,2011, 'Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon', Journal of Applied Physics, 110, http://dx.doi.org/10.1063/1.3633492
,2011, 'Accurate measurement of the formation rate of iron-boron pairs in silicon', Semiconductor Science and Technology, 26, http://dx.doi.org/10.1088/0268-1242/26/5/055019
,2010, 'Scanning X-ray fluorescence microspectroscopy of metallic impurities in solar-grade silicon', Physica Status Solidi (A) Applications and Materials Science, 207, pp. 1807 - 1810, http://dx.doi.org/10.1002/pssa.201026137
,2010, 'Electron and hole mobility reduction and Hall factor in phosphorus-compensated p -type silicon', Journal of Applied Physics, 108, http://dx.doi.org/10.1063/1.3456076
,2010, 'Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon', Semiconductor Science and Technology, 25, http://dx.doi.org/10.1088/0268-1242/25/5/055009
,2009, 'Light-induced boron-oxygen defect generation in compensated p -type Czochralski silicon', Journal of Applied Physics, 105, http://dx.doi.org/10.1063/1.3121208
,Conference Papers
2023, 'Density functional theory to calculate accurate defect energy levels in silicon', in AIP Conference Proceedings, http://dx.doi.org/10.1063/5.0141286
,2022, 'Deep Level Transient Spectroscopy Study of Float-zone Silicon Degradation under Light and Elevated Temperature', in AIP Conference Proceedings, http://dx.doi.org/10.1063/5.0089221
,2021, 'Electronic Properties of the Boron-oxygen Defect Precursor in Silicon', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 269 - 271, http://dx.doi.org/10.1109/PVSC43889.2021.9519027
,2020, 'Boron-oxygen-related traps in Czochralski grown silicon', Online, presented at Asia Pacific Solar Research Conference, Online, 30 November 2020
,2020, 'Boron-oxygen related light-induced degradation of Si solar cells: Transformation between minority carrier trapping and recombination active centers', in Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers (IEEE), Virtual, pp. 0689 - 0692, presented at 47th IEEE Photovoltaics Specialists Conference, Virtual, 15 June 2020 - 21 August 2020, http://dx.doi.org/10.1109/PVSC45281.2020.9300371
,2020, 'Defect luminescence from thermal donors in silicon: Impact of dopant type and thermal donor concentration', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2652 - 2654, http://dx.doi.org/10.1109/PVSC45281.2020.9300685
,2020, 'The Boron-Oxygen Defect: Does its Concentration Really Depends on the Boron/Dopant Concentration?', in Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 2522 - 2524, http://dx.doi.org/10.1109/PVSC45281.2020.9300431
,2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Canberra, presented at Asia-Pacific Solar Research Conference, Canberra, 03 December 2019
,2019, 'Trapping in multi-crystalline silicon wafers: Impact of laser treatment and firing', Marseille, France, presented at European Photovoltaic Solar Energy Conference and Exhibition, Marseille, France, 09 September 2019 - 13 September 2019
,2019, 'Will LeTID remain a commercial problem? Evaluating the solutions and a possible root cause. (LeTID仍是一个商业难题吗?根源分析和问题解决)', Wuxi, China, presented at 18th Issue PV WE CLASS-Crystalline Silicon Advanced Technology and Materials Forum, Wuxi, China, 24 April 2019 - 24 May 2019, http://dx.doi.org/10.26190/unsworks/27317
,2019, 'New insights into the thermally activated defects in n-type float-zone silicon', Leuven, presented at 9th International Conference on Silicon Photovoltaics, Leuven, 08 April 2019 - 10 April 2019
,2019, 'Hydrogen-Induced Degradation: An explanation of Light-and Elevated Temperature-Induced Degradation Mechanisms in n-and p-type Silicon', Leuven, Belgium, presented at 9thInternational Conference on Crystalline Silicon Photovoltaics 2019, Leuven, Belgium, 08 April 2019, http://dx.doi.org/10.26190/unsworks/27902
,2018, 'Accurate defect recombination parameters: What are the limitations of current analyses?', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 2520 - 2523, http://dx.doi.org/10.1109/PVSC.2018.8547585
,2018, 'Impact of Tabula Rasa and Phosphorus Diffusion Gettering on 21% Heterojunction Solar Cells Based on n-Type Czochralski-Grown Upgrade Metallurgical-Grade Silicon', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 1687 - 1691, http://dx.doi.org/10.1109/PVSC.2018.8548218
,2018, 'Slow minority carrier trapping and de-trapping in Czochralski silicon: Influence of thermal donors and the doping density', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, pp. 3312 - 3314, http://dx.doi.org/10.1109/PVSC.2018.8547946
,2018, 'An Open Source Based Repository for Defects in Silicon', in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers (IEEE), pp. 328 - 332, presented at 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 10 June 2018 - 15 June 2018, http://dx.doi.org/10.1109/PVSC.2018.8547621
,2018, 'An Open Source Based Repository For Defects in Silicon', in 2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC), IEEE, HI, Waikoloa, pp. 0328 - 0332, presented at 7th IEEE World Conference on Photovoltaic Energy Conversion (WCPEC) / A Joint Conference of 45th IEEE PVSC / 28th PVSEC / 34th EU PVSEC, HI, Waikoloa, 10 June 2018 - 15 June 2018, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000469200400077&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1
,2017, 'Growth of oxygen precipitates and dislocation in Cz silicon: Impact on the minority carrier lifetime', WIP-Renewable Energies, Munich, Germany, Amsterdam, presented at 35th European Photovoltaic Solar Energy Conference, Amsterdam, 24 September 2017 - 28 September 2017
,2016, 'Carrier induced degradation in compensated n-type silicon solar cells', Singapore, presented at 26th Photovoltaic Science and Engineering Conference, Singapore, 24 October 2016 - 28 October 2016
,2016, 'Characterization of Cu and Ni Precipitates in n- and p-type Czochralski-grown Silicon by Photoluminescence', in Energy Procedia, pp. 880 - 885, http://dx.doi.org/10.1016/j.egypro.2016.07.097
,2016, 'Simulation of 20.96% Efficiency n-type Czochralski UMG Silicon Solar Cell', in Energy Procedia, pp. 434 - 442, http://dx.doi.org/10.1016/j.egypro.2016.07.124
,2016, 'Low temperature activation of grown-in defects limiting the lifetime of high purity n-type float-zone silicon wafers', in Solid State Phenomena, pp. 120 - 125, http://dx.doi.org/10.4028/www.scientific.net/SSP.242.120
,2015, 'Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?', in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, http://dx.doi.org/10.1109/PVSC.2015.7355687
,2015, 'Physical Modelling of Luminescence Spectra from Crystalline Silicon', WIP-Renewable Energies, Munich, Germany, Hamburg, presented at 31st European Photovoltaic Solar Energy Conference, Hamburg, Germany, Hamburg, 14 September 2015 - 18 September 2015
,2015, 'Effects of Solar Cell Processing Steps on Dislocation Luminescence in Multicrystalline Silicon', in Energy Procedia, pp. 619 - 625, http://dx.doi.org/10.1016/j.egypro.2015.07.089
,2015, 'Lifetime Spectroscopy and Hydrogenation of Chromium in n- and p-type Cz Silicon', in Energy Procedia, pp. 646 - 650, http://dx.doi.org/10.1016/j.egypro.2015.07.092
,2014, 'Towards high efficiency UMG silicon solar cells', Kyoto, presented at 24th Photovoltaic Science and Engineering Conference, Kyoto, Japan,, Kyoto, 23 October 2014 - 27 October 2014
,2014, 'Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon', in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, pp. 129 - 134, http://dx.doi.org/10.1109/PVSC.2014.6925391
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