By Professor Bram Hoex

Journal articles

Agarwal S; Hoex B; Van De Banden MCM; Maraudas D; Aydil ES, 2004, 'Hydrogen in Si-Si bond center and platelet-like defect configurations in amorphous hydrogenated silicon', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 22, pp. 2719 - 2726, http://dx.doi.org/10.1116/1.1824191

Aarts IMP; Hoex B; Smets AHM; Engeln R; Kessels WMM; Van de Sanden MCM, 2004, 'Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy', Applied Physics Letters, 84, pp. 3079 - 3081, http://dx.doi.org/10.1063/1.1713047

Agarwal S; Hoex B; Van De Sanden MCM; Maroudas D; Aydil ES, 2003, 'Absolute densities of N and excited N2 in a N2 plasma', Applied Physics Letters, 83, pp. 4918 - 4920, http://dx.doi.org/10.1063/1.1630843

LeClair P; Hoex B; Wieldraaijer H; Kohlhepp JT; Swagten HJM; De Jonge WJM, 2001, 'Sign reversal of spin polarization in Co/Ru/Al2O3/Co magnetic tunnel junctions', Physical Review B - Condensed Matter and Materials Physics, 64, pp. 1004061 - 1004064

LeClair P; Hoex B; Wieldraaijer H; Kohlhepp JT; Swagten HJM; de Jonge WJM, 2001, 'Sign reversal of spin polarization in (formula presented) magnetic tunnel junctions', Physical Review B - Condensed Matter and Materials Physics, 64, http://dx.doi.org/10.1103/PhysRevB.64.100406

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