By Scientia Professor Alexander Hamilton

Preprints

McCamey DR; Francis M; McCallum JC; Hamilton AR; Greentree AD; Clark RG, 2004, The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs, http://dx.doi.org/10.48550/arxiv.cond-mat/0411185

Buehler TM; Reilly DJ; Starrett RP; Chan VC; Hamilton AR; Dzurak AS; Clark RG, 2004, Observing sub-microsecond telegraph noise with the radio frequency single electron transistor, http://dx.doi.org/10.48550/arxiv.cond-mat/0409568

Buehler TM; Reilly DJ; Starrett RP; Greentree AD; Hamilton AR; Dzurak AS; Clark RG, 2004, Single-Shot Readout with the Radio Frequency Single Electron Transistor in the Presence of Charge Noise, http://dx.doi.org/10.48550/arxiv.cond-mat/0304384

Greentree AD; Hamilton AR; Green F, 2004, Charge shelving and bias spectroscopy for the readout of a charge-qubit on the basis of superposition states, http://dx.doi.org/10.48550/arxiv.cond-mat/0308302

Buehler TM; Reilly DJ; Starrett RP; Court NA; Hamilton AR; Dzurak AS; Clark RG, 2004, Development and operation of the twin radio frequency single electron transistor for solid state qubit readout, http://dx.doi.org/10.48550/arxiv.cond-mat/0302085

Clarke WR; Micolich AP; Hamilton AR; Simmons MY; Hanna CB; Rodriguez JR; Pepper M; Ritchie DA, 2004, Evolution of the bilayer nu = 1 quantum Hall state under charge imbalance, http://dx.doi.org/10.48550/arxiv.cond-mat/0403490

Yasin CE; Sobey TL; Micolich AP; Hamilton AR; Simmons MY; Pfeiffer LN; West KW; Linfield EH; Pepper M; Ritchie DA, 2004, Interaction Correction to the Longitudinal Conductivity and Hall Resistivity in High Quality Two-Dimensional GaAs Electron and Hole Systems, http://dx.doi.org/10.48550/arxiv.cond-mat/0403411

Hollenberg LCL; Dzurak AS; Wellard C; Hamilton AR; Reilly DJ; Milburn GJ; Clark RG, 2003, Charge-based quantum computing using single donors in semiconductors, http://dx.doi.org/10.48550/arxiv.cond-mat/0306235

Dzurak AS; Hollenberg LCL; Jamieson DN; Stanley FE; Yang C; Buhler TM; Chan V; Reilly DJ; Wellard C; Hamilton AR; Pakes CI; Ferguson AG; Gauja E; Prawer S; Milburn GJ; Clark RG, 2003, Charge-based silicon quantum computer architectures using controlled single-ion implantation, http://dx.doi.org/10.48550/arxiv.cond-mat/0306265

Brenner R; Greentree AD; Hamilton AR, 2003, Current suppression in a double-island single-electron transistor for detection of degenerate charge configurations of a floating double-dot, http://dx.doi.org/10.48550/arxiv.cond-mat/0310478

Greentree AD; Schirmer SG; Green F; Hollenberg LCL; Hamilton AR; Clark RG, 2003, Maximizing the Hilbert space for a finite number of distinguishable quantum states, http://dx.doi.org/10.48550/arxiv.quant-ph/0304050

Buehler TM; McKinnon RP; Lumpkin NE; Brenner R; Reilly DJ; Macks LD; Hamilton AR; Dzurak AS; Clark RG, 2002, Self-aligned fabrication process for silicon quantum computer devices, http://dx.doi.org/10.48550/arxiv.cond-mat/0208374

O'Brien JL; Hamilton AR; Clark RG; Mielke CH; Smith JL; Cooley JC; Rickel DG; Starrett RP; Reilly DJ; Lumpkin NE; Hanrahan, RJ; Hults WL, 2002, Magnetic susceptibility of the normal-superconducting transition in high-purity single-crystal alpha-uranium, http://dx.doi.org/10.48550/arxiv.cond-mat/0208501

Oberbeck L; Curson NJ; Simmons MY; Brenner R; Hamilton AR; Schofield SR; Clark RG, 2002, Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer, http://dx.doi.org/10.48550/arxiv.cond-mat/0208355

Buehler TM; Reilly DJ; Brenner R; Hamilton AR; Dzurak AS; Clark RG, 2002, Correlated charge detection for read-out of a solid state quantum computer, http://dx.doi.org/10.48550/arxiv.cond-mat/0207597

Yasin CE; Simmons MY; Hamilton AR; Lumpkin NE; Clark RG; Pfeiffer LN; West KW, 2002, Universal behaviour in the floating up of quantum Hall extended states as B -> 0, http://dx.doi.org/10.48550/arxiv.cond-mat/0204519

Reilly DJ; Buehler TM; O'Brien JL; Hamilton AR; Dzurak AS; Clark RG; Kane BE; Pfeiffer LN; West KW, 2002, Density dependent spin polarisation in ultra low-disorder quantum wires, http://dx.doi.org/10.48550/arxiv.cond-mat/0202309

Hamilton AR; Simmons MY; Pepper M; Ritchie DA, 2000, On the metallic behaviour in dilute two-dimensional systems, http://dx.doi.org/10.48550/arxiv.cond-mat/0003295

Simmons MY; Hamilton AR; Pepper M; Linfield EH; Rose PD; Ritchie DA; . , 1999, Weak localisation, hole-hole interactions and the "metal"-insulator transition in two dimensions, http://dx.doi.org/10.48550/arxiv.cond-mat/9910368

Hamilton AR; Simmons MY; Pepper M; Linfield EH; Rose PD; Ritchie DA, 1998, Re-entrant insulator-metal-insulator transition at B=0 in a two dimensional hole gas, http://dx.doi.org/10.48550/arxiv.cond-mat/9808108

Simmons MY; Hamilton AR; Pepper M; Linfield EH; Rose PD; Ritchie DA, 1997, Metal-insulator transition at B=0 in a dilute two dimensional GaAs-AlGaAs hole gas, http://dx.doi.org/10.48550/arxiv.cond-mat/9709240

Simmons MY; Hamilton AR; Griffiths TG; Savchenko AK; Pepper M; Ritchie DA, 1997, Metal-insulator transition at B=0 in an ultra-low density ($r_{s}=23$) two dimensional GaAs/AlGaAs hole gas, http://dx.doi.org/10.48550/arxiv.cond-mat/9710111

Hamilton AR; Simmons MY; Bolton FM; Patel NK; Millard IS; Nicholls JT; Ritchie DA; Pepper M, 1996, Fractional Quantum Hall Effect in Bilayer Two Dimensional Hole Gas Systems, http://dx.doi.org/10.48550/arxiv.cond-mat/9606122

Liles S; Halverson D; Wang Z; Shamim A; Eggli R; Jin IK; Hillier J; Kumar K; Vorreiter I; Rendell M; Huang JY; Escott C; Hudson F; Lim WH; Culcer D; Dzurak A; Hamilton A, A singlet-triplet hole-spin qubit in MOS silicon, http://dx.doi.org/10.21203/rs.3.rs-3603337/v1

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