By Scientia Professor Alexander Hamilton

Preprints

Rendell MJ; Liles SD; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Hamilton AR, 2022, Gate voltage dependent Rashba spin splitting in hole transverse magnetic focussing, http://dx.doi.org/10.1103/PhysRevB.105.245305

Tosato A; Ferrari BM; Sammak A; Hamilton AR; Veldhorst M; Virgilio M; Scappucci G, 2022, A high-mobility hole bilayer in a germanium double quantum well, http://dx.doi.org/10.48550/arxiv.2201.06862

Lodari M; Kong O; Rendell M; Tosato A; Sammak A; Veldhorst M; Hamilton AR; Scappucci G, 2021, Lightly-strained germanium quantum wells with hole mobility exceeding one million, http://dx.doi.org/10.48550/arxiv.2112.11860

Keser AC; Wang DQ; Klochan O; Ho DYH; Tkachenko OA; Tkachenko VA; Culcer D; Adam S; Farrer I; Ritchie DA; Sushkov OP; Hamilton AR, 2021, Geometric control of universal hydrodynamic flow in a two dimensional electron fluid, http://dx.doi.org/10.48550/arxiv.2103.09463

Shetty A; Sfigakis F; Mak WY; Gupta KD; Buonacorsi B; Tam MC; Kim HS; Farrer I; Croxall AF; Beere HE; Hamilton AR; Pepper M; Austing DG; Studenikin SA; Sachrajda A; Reimer ME; Wasilewski ZR; Ritchie DA; Baugh J, 2020, Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs, http://dx.doi.org/10.48550/arxiv.2012.14370

Conti S; Pouya SS; Perali A; Virgilio M; Peeters FM; Hamilton AR; Scappucci G; Neilson D, 2020, Electron-hole superfluidity in strained Si/Ge type II heterojunctions, http://dx.doi.org/10.48550/arxiv.2012.05631

Liles SD; Martins F; Miserev DS; Kiselev AA; Thorvaldson ID; Rendell MJ; Jin IK; Hudson FE; Veldhorst M; Itoh KM; Sushkov OP; Ladd TD; Dzurak AS; Hamilton AR, 2020, Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot, http://dx.doi.org/10.1103/PhysRevB.104.235303

Cullen JH; Bhalla P; Marcellina E; Hamilton AR; Culcer D, 2020, Generating a topological anomalous Hall effect in a non-magnetic conductor, http://dx.doi.org/10.1103/PhysRevLett.126.256601

Srinivasan A; Farrer I; Ritchie DA; Hamilton AR, 2020, Improving reproducibility of quantum devices with completely undoped architectures, http://dx.doi.org/10.48550/arxiv.2011.04119

Tan C; Deng M-X; Xiang F; Zheng G; Albarakati S; Algarni M; Partridge J; Hamilton AR; Wang R-Q; Wang L, 2020, Determination of the spin orientation of helical electrons in monolayer WTe2, http://dx.doi.org/10.48550/arxiv.2010.15717

Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2019, Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits, http://dx.doi.org/10.48550/arxiv.1911.11143

Van der Donck M; Conti S; Perali A; Hamilton AR; Partoens B; Peeters FM; Neilson D, 2019, Three-dimensional electron-hole superfluidity in a superlattice close to room temperature, http://dx.doi.org/10.48550/arxiv.1911.01123

Saberi-Pouya S; Conti S; Perali A; Croxall AF; Hamilton AR; Peeters FM; Neilson D, 2019, Experimental conditions for observation of electron-hole superfluidity in GaAs heterostructures, http://dx.doi.org/10.48550/arxiv.1910.06631

Marcellina E; Srinivasan A; Nichele F; Stano P; Ritchie DA; Farrer I; Culcer D; Hamilton AR, 2019, Non-linear spin filter for non-magnetic materials at zero magnetic field, http://dx.doi.org/10.48550/arxiv.1907.01312

Marcellina E; Bhalla P; Hamilton AR; Culcer D, 2019, Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes, http://dx.doi.org/10.48550/arxiv.1906.11439

Albarakati S; Tan C; Chen Z-J; Partridge JG; Zheng G; Farrar L; Mayes ELH; Field MR; Lee C; Wang Y; Xiong Y; Tian M; Xiang F; Hamilton AR; Tretiakov OA; Culcer D; Zhao Y-J; Wang L, 2019, Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures, http://dx.doi.org/10.48550/arxiv.1904.10588

Marcellina E; Srinivasan A; Miserev D; Croxall A; Ritchie D; Farrer I; Sushkov O; Culcer D; Hamilton A, 2018, Electrical control of the Zeeman spin splitting in two-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.1806.10817

Zarenia M; Hamilton AR; Peeters FM; Neilson D, 2018, Multiband Mechanism for the Sign Reversal of Coulomb Drag Observed in Double Bilayer Graphene Heterostructures, http://dx.doi.org/10.48550/arxiv.1806.10732

Terrazos LA; Marcellina E; Wang Z; Coppersmith SN; Friesen M; Hamilton AR; Hu X; Koiller B; Saraiva AL; Culcer D; Capaz RB, 2018, Theory of Hole-Spin Qubits in Strained Germanium Quantum Dots, http://dx.doi.org/10.48550/arxiv.1803.10320

Liles SD; Li R; Yang CH; Hudson FE; Veldhorst M; Dzurak AS; Hamilton AR, 2018, Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot, http://dx.doi.org/10.48550/arxiv.1801.04494

Liu H; Marcellina E; Hamilton AR; Culcer D, 2017, Strong influence of spin-orbit coupling on magnetotransport in two-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.1708.07247

Srinivasan A; Miserev DS; Hudson KL; Klochan O; Muraki K; Hirayama Y; Reuter D; Wieck AD; Sushkov OP; Hamilton AR, 2017, Detection and control of spin-orbit interactions in a GaAs hole quantum point contact, http://dx.doi.org/10.48550/arxiv.1703.04233

Suominen HJ; Kjaergaard M; Hamilton AR; Shabani J; Palmstrøm CJ; Marcus CM; Nichele F, 2017, Zero-Energy Modes from Coalescing Andreev States in a Two-Dimensional Semiconductor-Superconductor Hybrid Platform, http://dx.doi.org/10.48550/arxiv.1703.03699

Xiang F-X; Srinivasan A; Klochan O; Dou S-X; Hamilton AR; Wang X-L, 2017, Thickness dependent electronic structure in WTe$_2$ thin films, http://dx.doi.org/10.48550/arxiv.1703.02741

Srinivasan A; Hudson KL; Miserev DS; Yeoh LA; Klochan O; Muraki K; Hirayama Y; Sushkov OP; Hamilton AR, 2017, Electrical control of the sign of the g-factor in a GaAs hole quantum point contact, http://dx.doi.org/10.48550/arxiv.1702.08135

Wang DQ; Klochan O; Hung J-T; Culcer D; Farrer I; Ritchie DA; Hamilton AR, 2016, Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot, http://dx.doi.org/10.48550/arxiv.1612.01062

Miserev DS; Srinivasan A; Tkachenko OA; Tkachenko VA; Farrer I; Ritchie DA; Hamilton AR; Sushkov OP, 2016, Mechanisms for strong anisotropy of in-plane g-factors in hole based quantum point contacts, http://dx.doi.org/10.48550/arxiv.1612.00572

Hung J-T; Marcellina E; Wang B; Hamilton AR; Culcer D, 2016, Spin blockade as a probe of Zeeman interactions in hole quantum dots, http://dx.doi.org/10.48550/arxiv.1610.02119

Marcellina E; Hamilton AR; Winkler R; Culcer D, 2016, Spin-orbit interactions in inversion-asymmetric 2D hole systems: a variational analysis, http://dx.doi.org/10.48550/arxiv.1604.08759

Li T; Yeoh LA; Srinivasan A; Klochan O; Ritchie DA; Simmons MY; Sushkov OP; Hamilton AR, 2016, Manifestation of a non-abelian gauge field in a p-type semiconductor system, http://dx.doi.org/10.48550/arxiv.1604.06149

Li R; Hudson FE; Dzurak AS; Hamilton AR, 2015, Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot, http://dx.doi.org/10.48550/arxiv.1509.00553

Scappucci G; Klesse WM; Yeoh LA; Carter DJ; Warschkow O; Marks NA; Jaeger DL; Capellini G; Simmons MY; Hamilton AR, 2015, Bottom-up assembly of metallic germanium, http://dx.doi.org/10.48550/arxiv.1503.05994

Smith LW; Al-Taie H; Lesage AAJ; Sfigakis F; See P; Griffiths JP; Beere HE; Jones GAC; Ritchie DA; Hamilton AR; Kelly MJ; Smith CG, 2015, Dependence of the 0.7 anomaly on the curvature of the potential barrier in quantum wires, http://dx.doi.org/10.48550/arxiv.1503.01490

Lo S-T; Klochan O; Liu C-H; Wang W-H; Hamilton AR; Liang C-T, 2014, Transport in disordered monolayer molybdenum disulfide nanoflakes: evidence for inhomogeneous charge transport, http://dx.doi.org/10.48550/arxiv.1409.0087

See AM; Aagesen M; Lindelof PE; Hamilton AR; Micolich AP, 2014, Using light and heat to controllably switch and reset disorder configuration in nanoscale devices, http://dx.doi.org/10.48550/arxiv.1408.4845

Klochan O; Hamilton AR; Gupta KD; Sfigakis F; Beere HE; Ritchie DA, 2014, Landau level spin diode in a GaAs two dimensional hole system, http://dx.doi.org/10.48550/arxiv.1406.3883

MacLeod SJ; See AM; Keane ZK; Scriven P; Micolich AP; Aagesen M; Lindelof PE; Hamilton AR, 2013, Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor, http://dx.doi.org/10.48550/arxiv.1312.5410

Carrad DJ; Burke AM; Klochan O; See AM; Hamilton AR; Rai A; Reuter D; Wieck AD; Micolich AP, 2013, Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot, http://dx.doi.org/10.48550/arxiv.1312.1754

See AM; Klochan O; Micolich AP; Aagesen M; Lindelof PE; Hamilton AR, 2013, A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor, http://dx.doi.org/10.48550/arxiv.1310.4889

Klochan O; Micolich AP; Hamilton AR; Reuter D; Wieck AD; Reininghaus F; Pletyukhov M; Schoeller H, 2013, Scaling of the Kondo zero bias peak in a hole quantum dot at finite temperatures, http://dx.doi.org/10.48550/arxiv.1305.1381

Li R; Hudson FE; Dzurak AS; Hamilton AR, 2013, Single Hole Transport in a Silicon Metal-Oxide-Semiconductor Quantum Dot, http://dx.doi.org/10.48550/arxiv.1304.2871

Srinivasan A; Yeoh LA; Klochan O; Martin TP; Chen JCH; Micolich AP; Hamilton AR; Reuter D; Wieck AD, 2013, Using a tunable quantum wire to measure the large out-of-plane spin splitting of quasi two-dimensional holes in a GaAs nanostructure, http://dx.doi.org/10.48550/arxiv.1301.7493

Burke AM; Klochan O; Farrer I; Ritchie DA; Hamilton AR; Micolich AP, 2012, Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devices, http://dx.doi.org/10.48550/arxiv.1208.4745

Burke AM; Waddington D; Carrad D; Lyttleton R; Tan HH; Reece PJ; Klochan O; Hamilton AR; Rai A; Reuter D; Wieck AD; Micolich AP, 2012, The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures, http://dx.doi.org/10.48550/arxiv.1207.2851

Micolich AP; See AM; Scannell BC; Marlow CA; Martin TP; Pilgrim I; Hamilton AR; Linke H; Taylor RP, 2012, Is it the boundaries or disorder that dominates electron transport in semiconductor `billiards'?, http://dx.doi.org/10.48550/arxiv.1204.4882

Chen JCH; Wang DQ; Klochan O; Micolich AP; Gupta KD; Sfigakis F; Ritchie DA; Reuter D; Wieck AD; Hamilton AR, 2012, Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure, http://dx.doi.org/10.48550/arxiv.1204.0827

See AM; Pilgrim I; Scannell BC; Montgomery RD; Klochan O; Burke AM; Aagesen M; Lindelof PE; Farrer I; Ritchie DA; Taylor RP; Hamilton AR; Micolich AP, 2012, The Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots, http://dx.doi.org/10.48550/arxiv.1204.0158

Mak WY; Sfigakis F; Gupta KD; Klochan O; Beere HE; Farrer I; Griffiths JP; Jones GAC; Hamilton AR; Ritchie DA, 2011, Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas, http://dx.doi.org/10.48550/arxiv.1112.5150

Van Beveren LHW; Tan KY; Lai N-S; Klochan O; Dzurak AS; Hamilton AR, 2011, Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime, http://dx.doi.org/10.48550/arxiv.1110.1418

Smith LW; Hamilton AR; Thomas KJ; Pepper M; Farrer I; Griffiths JP; Jones GAC; Ritchie DA, 2011, Compressibility measurements of quasi-one-dimensional quantum wires, http://dx.doi.org/10.48550/arxiv.1108.1268

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