Select Publications

Preprints

See AM; Klochan O; Micolich AP; Hamilton AR; Aagesen M; Lindelof PE, 2011, Fabrication of undoped AlGaAs/GaAs electron quantum dots, http://dx.doi.org/10.48550/arxiv.1106.5847

Scannell BC; Pilgrim I; See AM; Montgomery RD; Morse PK; Fairbanks MS; Marlow CA; Linke H; Farrer I; Ritchie DA; Hamilton AR; Micolich AP; Eaves L; Taylor RP, 2011, Probing the Sensitivity of Electron Wave Interference to Disorder-Induced Scattering in Solid-State Devices, http://dx.doi.org/10.48550/arxiv.1106.5823

Kernreiter T; Governale M; Hamilton AR; Zuelicke U, 2011, Charge transport by modulating spin-orbit gauge fields for quasi-onedimensional holes, http://dx.doi.org/10.48550/arxiv.1104.4520

Klochan O; Micolich AP; Hamilton AR; Trunov K; Reuter D; Wieck AD, 2011, Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot, http://dx.doi.org/10.48550/arxiv.1103.0320

Ho LH; Taskinen LJ; Micolich AP; Hamilton AR; Atkinson P; Ritchie DA, 2010, Origin of the hysteresis in bilayer 2D systems in the quantum Hall regime, http://dx.doi.org/10.48550/arxiv.1009.5468

Yeoh LA; Srinivasan A; Martin TP; Klochan O; Micolich AP; Hamilton AR, 2010, Piezoelectric rotator for studying quantum effects in semiconductor nanostructures at high magnetic fields and low temperatures, http://dx.doi.org/10.48550/arxiv.1009.2573

Ho LH; Taskinen LJ; Micolich AP; Hamilton AR; Atkinson P; Ritchie DA, 2010, Electrometry using the quantum Hall effect in a bilayer 2D electron system, http://dx.doi.org/10.48550/arxiv.1003.5017

See AM; Klochan O; Hamilton AR; Micolich AP; Aagesen M; Lindelof PE, 2010, AlGaAs/GaAs single electron transistors fabricated without modulation doping, http://dx.doi.org/10.48550/arxiv.1003.0240

Klochan O; Chen JCH; Micolich AP; Hamilton AR; Muraki K; Hirayama Y, 2010, Fabrication and characterization of an induced GaAs single hole transistor, http://dx.doi.org/10.48550/arxiv.1002.2998

Raoux A; Polini M; Asgari R; Hamilton AR; Fazio R; MacDonald AH, 2009, Velocity-modulation control of electron-wave propagation in graphene, http://dx.doi.org/10.48550/arxiv.0912.2608

Chen JCH; Klochan O; Micolich AP; Hamilton AR; Martin TP; Ho LH; Zuelicke U; Reuter D; Wieck AD, 2009, Observation of orientation- and $k$-dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures, http://dx.doi.org/10.48550/arxiv.0909.5295

MacLeod SJ; Chan K; Martin TP; Hamilton AR; See A; Micolich AP; Aagesen M; Lindelof PE, 2009, The role of background impurities in the single particle relaxation lifetime of a two-dimensional electron gas, http://dx.doi.org/10.48550/arxiv.0906.4161

Ho LH; Micolich AP; Hamilton AR; Sushkov OP, 2009, Ground-plane screening of Coulomb interactions in two-dimensional systems: How effectively can one two-dimensional system screen interactions in another?, http://dx.doi.org/10.48550/arxiv.0904.3786

Taskinen LJ; Starrett RP; Martin TP; Micolich AP; Hamilton AR; Simmons MY; Ritchie DA; Pepper M, 2008, Radio-frequency reflectometry on large gated 2-dimensional systems, http://dx.doi.org/10.48550/arxiv.0810.5184

Klochan O; Micolich AP; Ho LH; Hamilton AR; Muraki K; Hirayama Y, 2008, Interplay between one-dimensional confinement and crystallographic anisotropy in ballistic hole quantum wires, http://dx.doi.org/10.48550/arxiv.0809.0969

Martin TP; Szorkovszky A; Micolich AP; Hamilton AR; Marlow CA; Linke H; Taylor RP; Samuelson L, 2008, Enhanced Zeeman splitting in Ga0.25In0.75As quantum point contacts, http://dx.doi.org/10.48550/arxiv.0805.0504

Ho LH; Clarke WR; Micolich AP; Danneau R; Klochan O; Simmons MY; Hamilton AR; Pepper M; Ritchie DA, 2008, The effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.0804.4049

Ullah AR; Micolich AP; Cochrane JW; Hamilton AR, 2007, The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs, http://dx.doi.org/10.48550/arxiv.0711.1690

Micolich AP; Bell LL; Hamilton AR, 2007, An Improved Process for Fabricating High-Mobility Organic Molecular Crystal Field-Effect Transistors, http://dx.doi.org/10.48550/arxiv.0706.3099

Danneau R; Klochan O; Clarke WR; Ho LH; Micolich AP; Simmons MY; Hamilton AR; Pepper M; Ritchie DA, 2007, 0.7 Structure and Zero Bias Anomaly in Ballistic Hole Quantum Wires, http://dx.doi.org/10.48550/arxiv.cond-mat/0702210

Klochan O; Clarke WR; Danneau R; Micolich AP; Ho LH; Hamilton AR; Muraki K; Hirayama Y, 2006, Ballistic transport in induced one-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.cond-mat/0607509

Danneau R; Klochan O; Clarke WR; Ho LH; Micolich AP; Simmons MY; Hamilton AR; Pepper M; Ritchie DA; Zuelicke U, 2006, Anisotropic Zeeman splitting in ballistic one-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.cond-mat/0607357

Danneau R; Klochan O; Clarke WR; Ho LH; Micolich AP; Simmons MY; Hamilton AR; Pepper M; Ritchie DA; Zuelicke U, 2006, Zeeman splitting in ballistic hole quantum wires, http://dx.doi.org/10.48550/arxiv.cond-mat/0607355

McCamey DR; Huebl H; Brandt MS; Hutchison WD; McCallum JC; Clark RG; Hamilton AR, 2006, Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures, http://dx.doi.org/10.48550/arxiv.cond-mat/0605516

Micolich AP; Tavenner E; Powell BJ; Hamilton AR; Curry MT; Giedd RE; Meredith P, 2005, Superconductivity in Metal-mixed Ion-Implanted Polymer Films, http://dx.doi.org/10.48550/arxiv.cond-mat/0509278

Danneau R; Clarke WR; Klochan O; Micolich AP; Hamilton AR; Simmons MY; Pepper M; Ritchie DA, 2005, Conductance quantization and the 0.7x2e2/h conductance anomaly in one-dimensional hole systems, http://dx.doi.org/10.48550/arxiv.cond-mat/0507592

Buehler TM; Chan V; Ferguson AJ; Dzurak AS; Hudson FE; Reilly DJ; Hamilton AR; Clark RG; Jamieson DN; Yang C; Pakes CI; Prawer S, 2005, Controlled single electron transfer between Si:P dots, http://dx.doi.org/10.48550/arxiv.cond-mat/0506594

McCamey DR; Francis M; McCallum JC; Hamilton AR; Greentree AD; Clark RG, 2004, The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs, http://dx.doi.org/10.48550/arxiv.cond-mat/0411185

Ferguson AJ; Chan VC; Hamilton AR; Clark RG, 2004, Electric field induced charge noise in doped silicon: ionization of phosphorus donors, http://dx.doi.org/10.48550/arxiv.cond-mat/0410663

Buehler TM; Reilly DJ; Starrett RP; Chan VC; Hamilton AR; Dzurak AS; Clark RG, 2004, Observing sub-microsecond telegraph noise with the radio frequency single electron transistor, http://dx.doi.org/10.48550/arxiv.cond-mat/0409568

Clarke WR; Micolich AP; Hamilton AR; Simmons MY; Hanna CB; Rodriguez JR; Pepper M; Ritchie DA, 2004, Evolution of the bilayer nu = 1 quantum Hall state under charge imbalance, http://dx.doi.org/10.48550/arxiv.cond-mat/0403490

Greentree AD; Hamilton AR; Hollenberg LCL; Clark RG, 2004, Electrical readout of a spin qubit without double occupancy, http://dx.doi.org/10.48550/arxiv.cond-mat/0403449

Yasin CE; Sobey TL; Micolich AP; Hamilton AR; Simmons MY; Pfeiffer LN; West KW; Linfield EH; Pepper M; Ritchie DA, 2004, Interaction Correction to the Longitudinal Conductivity and Hall Resistivity in High Quality Two-Dimensional GaAs Electron and Hole Systems, http://dx.doi.org/10.48550/arxiv.cond-mat/0403411

Brenner R; Greentree AD; Hamilton AR, 2003, Current suppression in a double-island single-electron transistor for detection of degenerate charge configurations of a floating double-dot, http://dx.doi.org/10.48550/arxiv.cond-mat/0310478

Greentree AD; Hamilton AR; Green F, 2003, Charge shelving and bias spectroscopy for the readout of a charge-qubit on the basis of superposition states, http://dx.doi.org/10.48550/arxiv.cond-mat/0308302

Dzurak AS; Hollenberg LCL; Jamieson DN; Stanley FE; Yang C; Buhler TM; Chan V; Reilly DJ; Wellard C; Hamilton AR; Pakes CI; Ferguson AG; Gauja E; Prawer S; Milburn GJ; Clark RG, 2003, Charge-based silicon quantum computer architectures using controlled single-ion implantation, http://dx.doi.org/10.48550/arxiv.cond-mat/0306265

Hollenberg LCL; Dzurak AS; Wellard C; Hamilton AR; Reilly DJ; Milburn GJ; Clark RG, 2003, Charge-based quantum computing using single donors in semiconductors, http://dx.doi.org/10.48550/arxiv.cond-mat/0306235

Buehler TM; Reilly DJ; Starrett RP; Greentree AD; Hamilton AR; Dzurak AS; Clark RG, 2003, Single-Shot Readout with the Radio Frequency Single Electron Transistor in the Presence of Charge Noise, http://dx.doi.org/10.48550/arxiv.cond-mat/0304384

Greentree AD; Schirmer SG; Green F; Hollenberg LCL; Hamilton AR; Clark RG, 2003, Maximizing the Hilbert space for a finite number of distinguishable quantum states, http://dx.doi.org/10.48550/arxiv.quant-ph/0304050

Buehler TM; Reilly DJ; Starrett RP; Court NA; Hamilton AR; Dzurak AS; Clark RG, 2003, Development and operation of the twin radio frequency single electron transistor for solid state qubit readout, http://dx.doi.org/10.48550/arxiv.cond-mat/0302085

O'Brien JL; Hamilton AR; Clark RG; Mielke CH; Smith JL; Cooley JC; Rickel DG; Starrett RP; Reilly DJ; Lumpkin NE; Hanrahan, RJ; Hults WL, 2002, Magnetic susceptibility of the normal-superconducting transition in high-purity single-crystal alpha-uranium, http://dx.doi.org/10.48550/arxiv.cond-mat/0208501

Buehler TM; McKinnon RP; Lumpkin NE; Brenner R; Reilly DJ; Macks LD; Hamilton AR; Dzurak AS; Clark RG, 2002, Self-aligned fabrication process for silicon quantum computer devices, http://dx.doi.org/10.48550/arxiv.cond-mat/0208374

Oberbeck L; Curson NJ; Simmons MY; Brenner R; Hamilton AR; Schofield SR; Clark RG, 2002, Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer, http://dx.doi.org/10.48550/arxiv.cond-mat/0208355

Buehler TM; Reilly DJ; Brenner R; Hamilton AR; Dzurak AS; Clark RG, 2002, Correlated charge detection for read-out of a solid state quantum computer, http://dx.doi.org/10.48550/arxiv.cond-mat/0207597

Yasin CE; Simmons MY; Hamilton AR; Lumpkin NE; Clark RG; Pfeiffer LN; West KW, 2002, Universal behaviour in the floating up of quantum Hall extended states as B -> 0, http://dx.doi.org/10.48550/arxiv.cond-mat/0204519

Reilly DJ; Buehler TM; O'Brien JL; Hamilton AR; Dzurak AS; Clark RG; Kane BE; Pfeiffer LN; West KW, 2002, Density dependent spin polarisation in ultra low-disorder quantum wires, http://dx.doi.org/10.48550/arxiv.cond-mat/0202309

Hamilton AR; Simmons MY; Pepper M; Ritchie DA, 2000, On the metallic behaviour in dilute two-dimensional systems, http://dx.doi.org/10.48550/arxiv.cond-mat/0003295

Simmons MY; Hamilton AR; Pepper M; Linfield EH; Rose PD; Ritchie DA, 1999, Weak localisation, hole-hole interactions and the "metal"-insulator transition in two dimensions, http://dx.doi.org/10.1103/PhysRevLett.84.2489

Hamilton AR; Simmons MY; Pepper M; Linfield EH; Rose PD; Ritchie DA, 1998, Re-entrant insulator-metal-insulator transition at B=0 in a two dimensional hole gas, http://dx.doi.org/10.48550/arxiv.cond-mat/9808108

Simmons MY; Hamilton AR; Griffiths TG; Savchenko AK; Pepper M; Ritchie DA, 1997, Metal-insulator transition at B=0 in an ultra-low density ($r_{s}=23$) two dimensional GaAs/AlGaAs hole gas, http://dx.doi.org/10.48550/arxiv.cond-mat/9710111


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