By Scientia Professor Alexander Hamilton

Book Chapters

Andresen SE; McCamey DR; Brenner R; Ahrens MA; Mitic M; Chan VC; Gauja E; Hudson FE; Ferguson AJ; Buehler TM; Reilly DJ; Clark RG; Dzurak A; Hamilton AR; Wellard CJ; Yang C; Hopf T; Mccallum J; Jamieson DN; Hollenberg LC; Hutchison WD; Huebl H; Brandt MS; Hollenberg , 2009, 'Measuring the Charge and Spin States of Electrons on Individual Dopant Atoms in Silicon', in Electron Spin Resonance and Related Phenomena in Low-Dimensional Structures, Springer, Germany, pp. 169 - 182, http://dx.doi.org/10.1007/978-3-540-79365-6_9

Journal articles

Liles SD; Halverson DJ; Wang Z; Shamim A; Eggli RS; Jin IK; Hillier J; Kumar K; Vorreiter I; Rendell MJ; Huang JY; Escott CC; Hudson FE; Lim WH; Culcer D; Dzurak AS; Hamilton AR, 2024, 'A singlet-triplet hole-spin qubit in MOS silicon', Nature Communications, 15, http://dx.doi.org/10.1038/s41467-024-51902-9

Wang Z; Sarkar A; Liles SD; Saraiva A; Dzurak AS; Hamilton AR; Culcer D, 2024, 'Electrical operation of hole spin qubits in planar MOS silicon quantum dots', Physical Review B, 109, http://dx.doi.org/10.1103/PhysRevB.109.075427

Sarkar A; Wang Z; Rendell M; Hendrickx NW; Veldhorst M; Scappucci G; Khalifa M; Salfi J; Saraiva A; Dzurak AS; Hamilton AR; Culcer D, 2023, 'Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field', Physical Review B, 108, http://dx.doi.org/10.1103/PhysRevB.108.245301

Xiang F; Gupta A; Chaves A; Krix ZE; Watanabe K; Taniguchi T; Fuhrer MS; Peeters FM; Neilson D; Milošević MV; Hamilton AR, 2023, 'Intra-Zero-Energy Landau Level Crossings in Bilayer Graphene at High Electric Fields', Nano Letters, 23, pp. 9683 - 9689, http://dx.doi.org/10.1021/acs.nanolett.3c01456

Yang G; Sang L; Zhang C; Ye N; Hamilton A; Fuhrer MS; Wang X, 2023, 'The role of spin in thermoelectricity', Nature Reviews Physics, 5, pp. 466 - 482, http://dx.doi.org/10.1038/s42254-023-00604-0

Nguyen A; Akhgar G; Cortie DL; Bake A; Pastuovic Z; Zhao W; Liu C; Chen YH; Suzuki K; Fuhrer MS; Culcer D; Hamilton AR; Edmonds MT; Karel J, 2023, 'Increased phase coherence length in a porous topological insulator', Physical Review Materials, 7, http://dx.doi.org/10.1103/PhysRevMaterials.7.064202

Wang DQ; Krix Z; Sushkov OP; Farrer I; Ritchie DA; Hamilton AR; Klochan O, 2023, 'Formation of Artificial Fermi Surfaces with a Triangular Superlattice on a Conventional Two-Dimensional Electron Gas', Nano Letters, 23, pp. 1705 - 1710, http://dx.doi.org/10.1021/acs.nanolett.2c04358

Jin IK; Kumar K; Rendell MJ; Huang JY; Escott CC; Hudson FE; Lim WH; Dzurak AS; Hamilton AR; Liles SD, 2023, 'Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform', Nano Letters, 23, pp. 1261 - 1266, http://dx.doi.org/10.1021/acs.nanolett.2c04417

Conti S; Perali A; Hamilton AR; Milošević MV; Peeters FM; Neilson D, 2023, 'Chester Supersolid of Spatially Indirect Excitons in Double-Layer Semiconductor Heterostructures', Physical Review Letters, 130, http://dx.doi.org/10.1103/PhysRevLett.130.057001

Rendell MJ; Liles SD; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Hamilton AR, 2023, 'Spin polarization and spin-dependent scattering of holes observed in transverse magnetic focusing', Physical Review B, 107, http://dx.doi.org/10.1103/PhysRevB.107.045304

Johnson BC; Stuiber M; Creedon DL; Bose M; Berhane A; Willems Van Beveren LH; Rubanov S; Cole JH; Mourik V; Hamilton AR; Duty TL; Mccallum JC, 2023, 'Silicon-Aluminum Phase-Transformation-Induced Superconducting Rings', Nano Letters, 23, pp. 17 - 24, http://dx.doi.org/10.1021/acs.nanolett.2c02814

Chen YH; Xing K; Liu S; Holtzman LN; Creedon DL; Mccallum JC; Watanabe K; Taniguchi T; Barmak K; Hone J; Hamilton AR; Chen SY; Fuhrer MS, 2022, 'P-Type Ohmic Contact to Monolayer WSe2Field-Effect Transistors Using High-Electron Affinity Amorphous MoO3', ACS Applied Electronic Materials, 4, pp. 5379 - 5386, http://dx.doi.org/10.1021/acsaelm.2c01053

Ma Z; Zhang Q; Tao L; Wang Y; Sando D; Zhou J; Guo Y; Lord M; Zhou P; Ruan Y; Wang Z; Hamilton A; Gruverman A; Tsymbal EY; Zhang T; Valanoor N, 2022, 'A Room-Temperature Ferroelectric Resonant Tunneling Diode', Advanced Materials, 34, http://dx.doi.org/10.1002/adma.202205359

Rendell MJ; Liles SD; Srinivasan A; Klochan O; Farrer I; Ritchie DA; Hamilton AR, 2022, 'Gate voltage dependent Rashba spin splitting in hole transverse magnetic focusing', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.245305

Sang L; Li Z; Yang G; Nadeem M; Wang L; Xue Q; Hamilton AR; Wang X, 2022, 'Majorana zero modes in iron-based superconductors', Matter, 5, pp. 1734 - 1759, http://dx.doi.org/10.1016/j.matt.2022.04.021

Tosato A; Ferrari B; Sammak A; Hamilton AR; Veldhorst M; Virgilio M; Scappucci G, 2022, 'A High-Mobility Hole Bilayer in a Germanium Double Quantum Well', Advanced Quantum Technologies, 5, http://dx.doi.org/10.1002/qute.202100167

Wong JC; Cheng X; Musavigharavi P; Xiang F; Hamilton AR; Valanoor N; Sando D, 2022, 'Understanding the Role of Defective Phases on the Conductivity Behavior of Strained Epitaxial LaNiO3 Thin Films', ACS Applied Electronic Materials, 4, pp. 1196 - 1205, http://dx.doi.org/10.1021/acsaelm.1c01259

Lodari M; Kong O; Rendell M; Tosato A; Sammak A; Veldhorst M; Hamilton AR; Scappucci G, 2022, 'Lightly strained germanium quantum wells with hole mobility exceeding one million', Applied Physics Letters, 120, http://dx.doi.org/10.1063/5.0083161

Nadeem M; Zhang C; Culcer D; Hamilton AR; Fuhrer MS; Wang X, 2022, 'Optimizing topological switching in confined 2D-Xene nanoribbons via finite-size effects', Applied Physics Reviews, 9, http://dx.doi.org/10.1063/5.0076625

Shetty A; Sfigakis F; Mak WY; Das Gupta K; Buonacorsi B; Tam MC; Kim HS; Farrer I; Croxall AF; Beere HE; Hamilton AR; Pepper M; Austing DG; Studenikin SA; Sachrajda A; Reimer ME; Wasilewski ZR; Ritchie DA; Baugh J, 2022, 'Effects of biased and unbiased illuminations on two-dimensional electron gases in dopant-free GaAs/AlGaAs', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.075302

Ashlea Alava Y; Wang DQ; Chen C; Ritchie DA; Ludwig A; Ritzmann J; Wieck AD; Klochan O; Hamilton AR, 2022, 'Ultra-Shallow All-Epitaxial Aluminum Gate GaAs/AlxGa1−xAs Transistors with High Electron Mobility', Advanced Functional Materials, 32, http://dx.doi.org/10.1002/adfm.202104213

Tosato A; Ferrari B; Sammak A; Hamilton AR; Veldhorst M; Virgilio M; Scappucci G, 2022, 'Front Cover: A High‐Mobility Hole Bilayer in a Germanium Double Quantum Well (Adv. Quantum Technol. 5/2022)', Advanced Quantum Technologies, 5, http://dx.doi.org/10.1002/qute.202270051

Liles SD; Martins F; Miserev DS; Kiselev AA; Thorvaldson ID; Rendell MJ; Jin IK; Hudson FE; Veldhorst M; Itoh KM; Sushkov OP; Ladd TD; Dzurak AS; Hamilton AR, 2021, 'Electrical control of the g tensor of the first hole in a silicon MOS quantum dot', Physical Review B, 104, http://dx.doi.org/10.1103/PhysRevB.104.235303

Conti S; Saberi-Pouya S; Perali A; Virgilio M; Peeters FM; Hamilton AR; Scappucci G; Neilson D, 2021, 'Electron–hole superfluidity in strained Si/Ge type II heterojunctions', npj Quantum Materials, 6, http://dx.doi.org/10.1038/s41535-021-00344-3

Hudson KL; Srinivasan A; Goulko O; Adam J; Wang Q; Yeoh LA; Klochan O; Farrer I; Ritchie DA; Ludwig A; Wieck AD; von Delft J; Hamilton AR, 2021, 'New signatures of the spin gap in quantum point contacts', Nature Communications, 12, http://dx.doi.org/10.1038/s41467-020-19895-3

Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2021, 'Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits', npj Quantum Information, 7, http://dx.doi.org/10.1038/s41534-021-00386-2

Tan C; Deng MX; Zheng G; Xiang F; Albarakati S; Algarni M; Farrar L; Alzahrani S; Partridge J; Yi JB; Hamilton AR; Wang RQ; Wang L, 2021, 'Spin-Momentum Locking Induced Anisotropic Magnetoresistance in Monolayer WTe2', Nano Letters, 21, pp. 9005 - 9011, http://dx.doi.org/10.1021/acs.nanolett.1c02329

Keser AC; Wang DQ; Klochan O; Ho DYH; Tkachenko OA; Tkachenko VA; Culcer D; Adam S; Farrer I; Ritchie DA; Sushkov OP; Hamilton AR, 2021, 'Geometric Control of Universal Hydrodynamic Flow in a Two-Dimensional Electron Fluid', Physical Review X, 11, pp. 031030, http://dx.doi.org/10.1103/PhysRevX.11.031030

Ashlea Alava Y; Wang DQ; Chen C; Ritchie DA; Klochan O; Hamilton AR, 2021, 'High electron mobility and low noise quantum point contacts in an ultra-shallow all-epitaxial metal gate GaAs/AlxGa1−xAs heterostructure', Applied Physics Letters, 119, http://dx.doi.org/10.1063/5.0053816

Cullen JH; Bhalla P; Marcellina E; Hamilton AR; Culcer D, 2021, 'Generating a Topological Anomalous Hall Effect in a Nonmagnetic Conductor: An In-Plane Magnetic Field as a Direct Probe of the Berry Curvature', Physical Review Letters, 126, http://dx.doi.org/10.1103/PhysRevLett.126.256601

Yang J; Krix ZE; Kim S; Tang J; Mayyas M; Wang Y; Watanabe K; Taniguchi T; Li LH; Hamilton AR; Aharonovich I; Sushkov OP; Kalantar-Zadeh K, 2021, 'Near-Field Excited Archimedean-like Tiling Patterns in Phonon-Polaritonic Crystals', ACS Nano, 15, pp. 9134 - 9142, http://dx.doi.org/10.1021/acsnano.1c02507

Terrazos LA; Marcellina E; Wang Z; Coppersmith SN; Friesen M; Hamilton AR; Hu X; Koiller B; Saraiva AL; Culcer D; Capaz RB, 2021, 'Theory of hole-spin qubits in strained germanium quantum dots', Physical Review B, 103, http://dx.doi.org/10.1103/PhysRevB.103.125201

Drachmann ACC; Diaz RE; Thomas C; Suominen HJ; Whiticar AM; Fornieri A; Gronin S; Wang T; Gardner GC; Hamilton AR; Nichele F; Manfra MJ; Marcus CM, 2021, 'Anodic oxidation of epitaxial superconductor-semiconductor hybrids', Physical Review Materials, 5, http://dx.doi.org/10.1103/PhysRevMaterials.5.013805

Srinivasan A; Farrer I; Ritchie DA; Hamilton AR, 2020, 'Improving reproducibility of quantum devices with completely undoped architectures', Applied Physics Letters, 117, http://dx.doi.org/10.1063/5.0024923

Marcellina E; Srinivasan A; Nichele F; Stano P; Ritchie DA; Farrer I; Culcer D; Hamilton AR, 2020, 'Nonlinear spin filter for nonmagnetic materials at zero magnetic field', Physical Review B, 102, http://dx.doi.org/10.1103/PhysRevB.102.140406

Nadeem M; Hamilton AR; Fuhrer MS; Wang X, 2020, 'Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin-Gapless Semiconductors—A Perspective Review', Small, 16, http://dx.doi.org/10.1002/smll.201904322

Van Der Donck M; Conti S; Perali A; Hamilton AR; Partoens B; Peeters FM; Neilson D, 2020, 'Three-dimensional electron-hole superfluidity in a superlattice close to room temperature', Physical Review B, 102, http://dx.doi.org/10.1103/PhysRevB.102.060503

Wang DQ; Reuter D; Wieck AD; Hamilton AR; Klochan O, 2020, 'Two-dimensional lateral surface superlattices in GaAs heterostructures with independent control of carrier density and modulation potential', Applied Physics Letters, 117, http://dx.doi.org/10.1063/5.0009462

Saberi-Pouya S; Conti S; Perali A; Croxall AF; Hamilton AR; Peeters FM; Neilson D, 2020, 'Experimental conditions for the observation of electron-hole superfluidity in GaAs heterostructures', Physical Review B, 101, http://dx.doi.org/10.1103/PhysRevB.101.140501

Marcellina E; Bhalla P; Hamilton AR; Culcer D, 2020, 'Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-32 holes', Physical Review B, 101, http://dx.doi.org/10.1103/PhysRevB.101.121302

Akhgar G; Ley L; Creedon DL; Stacey A; McCallum JC; Hamilton AR; Pakes CI, 2019, 'G -factor and well-width fluctuations as a function of carrier density in the two-dimensional hole accumulation layer of transfer-doped diamond', Physical Review B, 99, http://dx.doi.org/10.1103/PhysRevB.99.035159

Sharma P; Xiang FX; Shao DF; Zhang D; Tsymbal EY; Hamilton AR; Seidel J, 2019, 'A room-temperature ferroelectric semimetal', Science Advances, 5, http://dx.doi.org/10.1126/sciadv.aax5080

Albarakati S; Tan C; Chen ZJ; Partridge JG; Zheng G; Farrar L; Mayes ELH; Field MR; Lee C; Wang Y; Xiong Y; Tian M; Xiang F; Hamilton AR; Tretiakov OA; Culcer D; Zhao YJ; Wang L, 2019, 'Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 trilayer heterostructures', Science Advances, 5, http://dx.doi.org/10.1126/sciadv.aaw0409

Liles SD; Li R; Yang CH; Hudson FE; Veldhorst M; Dzurak AS; Hamilton AR, 2018, 'Spin and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot', Nature Communications, 9, http://dx.doi.org/10.1038/s41467-018-05700-9

Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2018, 'Spin–orbit coupling in silicon for electrons bound to donors', npj Quantum Information, 4, http://dx.doi.org/10.1038/s41534-018-0111-1

Liu H; Marcellina E; Hamilton AR; Culcer D, 2018, 'Strong Spin-Orbit Contribution to the Hall Coefficient of Two-Dimensional Hole Systems', Physical Review Letters, 121, http://dx.doi.org/10.1103/PhysRevLett.121.087701

Marcellina E; Srinivasan A; Miserev DS; Croxall AF; Ritchie DA; Farrer I; Sushkov OP; Culcer D; Hamilton AR, 2018, 'Electrical Control of the Zeeman Spin Splitting in Two-Dimensional Hole Systems', Physical Review Letters, 121, http://dx.doi.org/10.1103/PhysRevLett.121.077701

Zarenia M; Hamilton AR; Peeters FM; Neilson D, 2018, 'Multiband Mechanism for the Sign Reversal of Coulomb Drag Observed in Double Bilayer Graphene Heterostructures', Physical Review Letters, 121, http://dx.doi.org/10.1103/PhysRevLett.121.036601

Xiang FX; Srinivasan A; Du ZZ; Klochan O; Dou SX; Hamilton AR; Wang XL, 2018, 'Thickness-dependent electronic structure in WTe2 thin films', Physical Review B, 98, http://dx.doi.org/10.1103/PhysRevB.98.035115

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