Select Publications
Journal articles
2014, 'An accurate single-electron pump based on a highly tunable silicon quantum dot', Nano Letters, 14, pp. 3405 - 3411, http://dx.doi.org/10.1021/nl500927q
,2014, 'Single-shot readout and relaxation of singlet and triplet states in exchange-coupled P 31 electron spins in silicon', Physical Review Letters, 112, http://dx.doi.org/10.1103/PhysRevLett.112.236801
,2014, 'High-fidelity adiabatic inversion of a 31P electron spin qubit in natural silicon', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.4867905
,2014, 'An addressable quantum dot qubit with fault-tolerant control-fidelity', Nature Nanotechnology, 9, pp. 981 - 985, http://dx.doi.org/10.1038/nnano.2014.216
,2014, 'Storing quantum information for 30 seconds in a nanoelectronic device', Nature Nanotechnology, 9, pp. 986 - 991, http://dx.doi.org/10.1038/nnano.2014.211
,2013, 'Single hole transport in a silicon metal-oxide-semiconductor quantum dot', Applied Physics Letters, 103, http://dx.doi.org/10.1063/1.4826183
,2013, 'Silicon Quantum Electronics', Reviews of Modern Physics, 85, pp. 961 - 1019, http://dx.doi.org/10.1103/RevModPhys.85.961
,2013, 'Coulomb interaction and valley-orbit coupling in Si quantum dots', Physical Review - Section B - Condensed Matter, 88, pp. 085311-1 - 085311-6, http://dx.doi.org/10.1103/PhysRevB.88.085311
,2013, 'High-fidelity readout and control of a nuclear spin qubit in silicon', Nature, 496, pp. 334 - 338, http://dx.doi.org/10.1038/nature12011
,2013, 'Nanoscale broadband transmission lines for spin qubit control', Nanotechnology, 24, pp. Article number015202, http://dx.doi.org/10.1088/0957-4484/24/1/015202
,2013, 'Noninvasive spatial metrology of single-atom devices', Nano Letters, 13, pp. 1903 - 1909, http://dx.doi.org/10.1021/nl303863s
,2013, 'Printed circuit board metal powder filters for low electron temperatures', Review of Scientific Instruments, 84, http://dx.doi.org/10.1063/1.4802875
,2013, 'Quantum spintronics: Engineering and manipulating atom-like spins in semiconductors', Science, 339, pp. 1174 - 1179, http://dx.doi.org/10.1126/science.1231364
,2013, 'Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting', Nature communications, 4, http://dx.doi.org/10.1038/ncomms3069
,2012, 'A single-atom electron spin qubit in silicon', Nature, 489, pp. 541 - 544, http://dx.doi.org/10.1038/nature11449
,2012, 'Orbital and valley state spectra of a few-electron silicon quantum dot', Physical Review B, 86, pp. 115319, http://dx.doi.org/10.1103/PhysRevB.86.115319
,2012, 'Overlapping-Gate Architecture for Silicon Hall Bar MOSFET Devices in the Low Electron Density and High Magnetic Field Regime', Materials Science Forum, 700, pp. 93 - 95
,2011, 'Charge sharing in multi-electrode devices for deterministic doping studied by IBIC', Nuclear Instruments and Methods in Physics Research Section B - Beam Interactions With Materials and Atoms, 269, pp. 2336 - 2339, http://dx.doi.org/10.1016/j.nimb.2011.02.044
,2011, 'Dynamically controlled charge sensing of a few-electron silicon quantum dot', AIP Advances, 1, http://dx.doi.org/10.1063/1.3654496
,2011, 'Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot', Scientific Reports, 1, http://dx.doi.org/10.1038/srep00110
,2011, 'Quantum computing: Diamond and silicon converge', Nature, 479, pp. 47 - 48, http://dx.doi.org/10.1038/479047a
,2011, 'Single-electron shuttle based on a silicon quantum dot', Applied Physics Letters, 98, pp. Article number: 212103, http://dx.doi.org/10.1063/1.3593491
,2011, 'Spin filling of valley-orbit states in a silicon quantum dot', Nanotechnology, 22, pp. Article number: 335704, http://dx.doi.org/10.1088/0957-4484/22/33/335704
,2010, 'Single Dopant Implantation into a Nanoscale MOSFET Devices', ECS Meeting Abstracts, MA2010-02, pp. 1570 - 1570, http://dx.doi.org/10.1149/ma2010-02/23/1570
,2010, 'Characterization of SOS-CMOS FETs at Low Temperatures for the Design of Integrated Circuits for Quantum Bit Control and Readout', IEEE Transactions on Electron Devices, 57, pp. 539 - 547, http://dx.doi.org/10.1109/TED.2009.2037381
,2010, 'Electron tunnel rates in a donor-silicon single electron transistor hybrid', Physical Review - Section B - Condensed Matter, 81, pp. 235318, http://dx.doi.org/10.1103/PhysRevB.81.235318
,2010, 'Overlapping-gate architecture for silicon Hall bar field-effect transistors in the low electron density regime', Applied Physics Letters, 97, pp. 152102 - 152104, http://dx.doi.org/10.1063/1.3501136
,2010, 'Probe and control of the reservoir density of states in single-electron devices', Physical Review - Section B - Condensed Matter, 81, pp. 161304, http://dx.doi.org/10.1103/PhysRevB.81.161304
,2010, 'Single-shot readout of an electron spin in silicon', Nature, 467, pp. 687 - 691, http://dx.doi.org/10.1038/nature09392
,2010, 'Tailoring spectral position and width of field enhancement by focused ion-beam patterning of plasmonic nanoparticles', Physica Status Solidi-Rapid Research Letters, 4, pp. 262 - 264, http://dx.doi.org/10.1002/pssr.201004239
,2010, 'Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor', Nano Letters, 10, pp. 11 - 15, http://dx.doi.org/10.1021/nl901635j
,2009, 'Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon', Physical Review - Section B - Condensed Matter, 80, pp. 081307-1 - 081307-4, http://dx.doi.org/10.1103/PhysRevB.80.081307
,2009, 'Cylindrical silicon-on-insulator microdosimeter: Design, fabrication and TCAD modeling', IEEE Transactions on Nuclear Science, 56, pp. 424 - 428
,2009, 'Electrostatically defined few-electron double quantum dot in silicon', Applied Physics Letters, 94, pp. 173502-1 - 173502-3, http://dx.doi.org/10.1063/1.3124242
,2009, 'Observation of the single-electron regime in a highly tunable silicon quantum dot', Applied Physics Letters, 95, pp. 242102-1 - 242102-3, http://dx.doi.org/10.1063/1.3272858
,2008, 'A Cylindrical Silicon-on-Insulator Microdosimeter: Charge Collection Characteristics', IEEE Transactions on Nuclear Science, 55, pp. 3414 - 3420
,2008, 'A silicon radio-frequency single electron transistor', Applied Physics Letters, 92, pp. 112103 - 112105, http://dx.doi.org/10.1063/1.2831664
,2008, 'Bias spectroscopy and simultaneous single-electron transistor charge state detection of Si:P double dots', Nanotechnology, 19, pp. 265201 - 265205
,2008, 'Gate-controlled charge transfer in Si:P Double quantum dots', Nanotechnology, 19, pp. 195402 - 195496
,2008, 'Low-Noise Detection System for the Counted Implantation of Single Ions in Silicon', IEEE Transactions on Nuclear Science, 55, pp. 812 - 816
,2008, 'Tissue equivalence correction in silicon microdosimetry for protons characteristic of the LEO space environment.', IEEE Transactions on Nuclear Science, 55, pp. 3407 - 3413
,2007, 'Charge state control and relaxation in an atomically doped silicon device', Nano Letters, 7, pp. 2000 - 2003, http://dx.doi.org/10.1021/nl070797t
,2007, 'Gate-defined quantum dots in intrinsic silicon', Nano Letters, 7, pp. 2051 - 2055, http://dx.doi.org/10.1021/nl070949k
,2007, 'Scaling of ion implanted Si:P single electron devices', Nanotechnology, 18, pp. 235401 - 235405, http://dx.doi.org/10.1088/0957-4484/18/23/235401
,2007, 'Single shot charge detection using a radio-frequency quantum point contact', Applied Physics Letters, 91, pp. 222104 - 222106, http://dx.doi.org/10.1063/1.2809370
,2006, 'Controlled single electron transfer between Si:P dots', Applied Physics Letters, 88, pp. 192101 - 192103, http://dx.doi.org/10.1063/1.2203740
,2006, 'Coulomb blockade in a nanoscale phosphorus-in-silicon island', Microelectronic Engineering, 83, pp. 1809 - 1813, http://dx.doi.org/10.1016/j.mee.2006.01.173
,2006, 'Demonstration of a silicon-based quantum cellular automata cell', Applied Physics Letters, 89, pp. 13503 - 13505, http://dx.doi.org/10.1063/1.2219128
,2006, 'Ion implanted Si:P double dot with gate tunable interdot coupling', Journal of Applied Physics, 100, pp. 106104 - 106106
,2006, 'Quantum effects in ion implanted devices', Nuclear Instruments and Methods in Physics Research Section B - Beam Interactions With Materials and Atoms, 249, pp. 221 - 225
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