ORCID as entered in ROS
https://orcid.org/0000-0003-1389-5096
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Preprints
, 2018, High-fidelity and robust two-qubit gates for quantum-dot spin qubits in silicon, http://dx.doi.org/10.48550/arxiv.1806.02858
, 2018, Fidelity benchmarks for two-qubit gates in silicon, http://dx.doi.org/10.48550/arxiv.1805.05027
, 2018, Assessment of a silicon quantum dot spin qubit environment via noise spectroscopy, http://dx.doi.org/10.48550/arxiv.1803.01609
, 2018, Impact of valley phase and splitting on readout of silicon spin qubits, http://dx.doi.org/10.48550/arxiv.1803.01811
, 2018, Gigahertz Single-Electron Pumping Mediated by Parasitic States, http://dx.doi.org/10.48550/arxiv.1803.00791
, 2018, Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot, http://dx.doi.org/10.48550/arxiv.1801.04494
, 2017, Electron g-factor of valley states in realistic silicon quantum dots, http://dx.doi.org/10.48550/arxiv.1708.04555
, 2017, Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout, http://dx.doi.org/10.48550/arxiv.1708.03445
, 2017, Thermal-error regime in high-accuracy gigahertz single-electron pumping, http://dx.doi.org/10.48550/arxiv.1703.04795
, 2017, Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability, http://dx.doi.org/10.48550/arxiv.1703.03840
, 2017, Coherent control via weak measurements in $^{31}$P single-atom electron and nuclear spin qubits, http://dx.doi.org/10.48550/arxiv.1702.07991
, 2016, Interfacing spin qubits in quantum dots and donors - hot, dense and coherent, http://dx.doi.org/10.48550/arxiv.1612.05936
, 2016, Valley splitting of single-electron Si MOS quantum dots, http://dx.doi.org/10.48550/arxiv.1610.03388
, 2016, Dispersive readout of a silicon quantum dot with an accumulation-mode gate sensor, http://dx.doi.org/10.48550/arxiv.1610.00767
, 2016, Silicon CMOS architecture for a spin-based quantum computer, http://dx.doi.org/10.48550/arxiv.1609.09700
, 2016, Impact of g-factors and valleys on spin qubits in a silicon double quantum dot, http://dx.doi.org/10.48550/arxiv.1608.07748
, 2016, A single-atom quantum memory in silicon, http://dx.doi.org/10.48550/arxiv.1608.07109
, 2016, A logical qubit in a linear array of semiconductor quantum dots, http://dx.doi.org/10.48550/arxiv.1608.06335
, 2016, An electrically driven spin qubit based on valley mixing, http://dx.doi.org/10.48550/arxiv.1608.02189
, 2016, Optimization of a solid-state electron spin qubit using Gate Set Tomography, http://dx.doi.org/10.48550/arxiv.1606.02856
, 2016, Breaking the rotating wave approximation for a strongly-driven, dressed, single electron spin, http://dx.doi.org/10.48550/arxiv.1606.02380
, 2016, A Dressed Spin Qubit in Silicon, http://dx.doi.org/10.48550/arxiv.1603.04800
, 2016, Three-waveform bidirectional pumping of single electrons with a silicon quantum dot, http://dx.doi.org/10.48550/arxiv.1603.01225
, 2015, Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot, http://dx.doi.org/10.48550/arxiv.1509.00553
, 2015, A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures, http://dx.doi.org/10.48550/arxiv.1506.01224
, 2015, Spin-orbit coupling and operation of multi-valley spin qubits, http://dx.doi.org/10.48550/arxiv.1505.01213
, 2015, Bell's inequality violation with spins in silicon, http://dx.doi.org/10.48550/arxiv.1504.03112
, 2015, Electrically controlling single spin qubits in a continuous microwave field, http://dx.doi.org/10.48550/arxiv.1503.05985
, 2015, Non-exponential Fidelity Decay in Randomized Benchmarking with Low-Frequency Noise, http://dx.doi.org/10.48550/arxiv.1502.05119
, 2015, Electron counting in a silicon single-electron pump, http://dx.doi.org/10.48550/arxiv.1502.04446
, 2014, A Two Qubit Logic Gate in Silicon, http://dx.doi.org/10.48550/arxiv.1411.5760
, 2014, Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking, http://dx.doi.org/10.48550/arxiv.1410.2338
, 2014, Coherent Control of a Single Silicon-29 Nuclear Spin Qubit, http://dx.doi.org/10.48550/arxiv.1408.1347
, 2014, An addressable quantum dot qubit with fault-tolerant control fidelity, http://dx.doi.org/10.48550/arxiv.1407.1950
, 2014, Charge State Hysteresis in Semiconductor Quantum Dots, http://dx.doi.org/10.48550/arxiv.1407.1625
, 2014, Charge Offset Stability in Si Single Electron Devices with Al Gates, http://dx.doi.org/10.48550/arxiv.1406.7475
, 2014, An accurate single-electron pump based on a highly tunable silicon quantum dot, http://dx.doi.org/10.48550/arxiv.1406.1267
, 2014, Single-shot readout and relaxation of singlet/triplet states in exchange-coupled $^{31}$P electron spins in silicon, http://dx.doi.org/10.48550/arxiv.1402.7148
, 2014, Storing quantum information for 30 seconds in a nanoelectronic device, http://dx.doi.org/10.48550/arxiv.1402.7140
, 2013, High-fidelity adiabatic inversion of a $^{31}\mathrm{P}$ electron spin qubit in natural silicon, http://dx.doi.org/10.48550/arxiv.1312.4647
, 2013, Coulomb interaction and valley-orbit coupling in Si quantum dots, http://dx.doi.org/10.48550/arxiv.1308.2728
, 2013, A single-atom electron spin qubit in silicon, http://dx.doi.org/10.48550/arxiv.1305.4481
, 2013, Printed Circuit Board Metal Powder Filters for Low Electron Temperatures, http://dx.doi.org/10.48550/arxiv.1304.3306
, 2013, Single Hole Transport in a Silicon Metal-Oxide-Semiconductor Quantum Dot, http://dx.doi.org/10.48550/arxiv.1304.2871
, 2013, Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting, http://dx.doi.org/10.48550/arxiv.1302.0983
, 2013, High-fidelity readout and control of a nuclear spin qubit in silicon, http://dx.doi.org/10.48550/arxiv.1302.0047
, 2012, Nanoscale broadband transmission lines for spin qubit control, http://dx.doi.org/10.48550/arxiv.1208.2421
, 2012, Silicon Quantum Electronics, http://dx.doi.org/10.48550/arxiv.1206.5202
, 2012, Orbital and valley state spectra of a few-electron silicon quantum dot, http://dx.doi.org/10.48550/arxiv.1204.0843
, 2011, Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime, http://dx.doi.org/10.48550/arxiv.1110.1418
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