ORCID as entered in ROS

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Dehollain JP; Pla JJ; Siew E; Tan KY; Dzurak AS; Morello A, 2012, Nanoscale broadband transmission lines for spin qubit control, http://dx.doi.org/10.48550/arxiv.1208.2421
Zwanenburg FA; Dzurak AS; Morello A; Simmons MY; Hollenberg LCL; Klimeck G; Rogge S; Coppersmith SN; Eriksson MA, 2012, Silicon Quantum Electronics, http://dx.doi.org/10.48550/arxiv.1206.5202
Yang CH; Lim WH; Lai NS; Rossi A; Morello A; Dzurak AS, 2012, Orbital and valley state spectra of a few-electron silicon quantum dot, http://dx.doi.org/10.48550/arxiv.1204.0843
Van Beveren LHW; Tan KY; Lai N-S; Klochan O; Dzurak AS; Hamilton AR, 2011, Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime, http://dx.doi.org/10.48550/arxiv.1110.1418
Yang CH; Lim WH; Zwanenburg FA; Dzurak AS, 2011, Dynamically controlled charge sensing of a few-electron silicon quantum dot, http://dx.doi.org/10.48550/arxiv.1107.1557
Chan KW; Mottonen M; Kemppinen A; Lai NS; Tan KY; Lim WH; Dzurak AS, 2011, Single-electron shuttle based on a silicon quantum dot, http://dx.doi.org/10.48550/arxiv.1103.5891
Lim WH; Yang CH; Zwanenburg FA; Dzurak AS, 2011, Spin filling of valley-orbit states in a silicon quantum dot, http://dx.doi.org/10.48550/arxiv.1103.2895
Lai NS; Lim WH; Yang CH; Zwanenburg FA; Coish WA; Qassemi F; Morello A; Dzurak AS, 2010, Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot, http://dx.doi.org/10.48550/arxiv.1012.1410
van Beveren LHW; Tan KY; Lai N-S; Dzurak AS; Hamilton AR, 2010, Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime, http://dx.doi.org/10.48550/arxiv.1009.3109
Morello A; Pla JJ; Zwanenburg FA; Chan KW; Huebl H; Mottonen M; Nugroho CD; Yang C; van Donkelaar JA; Alves ADC; Jamieson DN; Escott CC; Hollenberg LCL; Clark RG; Dzurak AS, 2010, Single-shot readout of an electron spin in silicon, http://dx.doi.org/10.48550/arxiv.1003.2679
Huebl H; Nugroho CD; Morello A; Escott CC; Eriksson MA; Yang C; Jamieson DN; Clark RG; Dzurak AS, 2009, Electron tunnel rates in a donor-silicon single electron transistor hybrid, http://dx.doi.org/10.48550/arxiv.0912.2431
Mottonen M; Tan KY; Chan KW; Zwanenburg FA; Lim WH; Escott CC; Pirkkalainen J-M; Morello A; Yang C; van Donkelaar JA; Alves ADC; Jamieson DN; Hollenberg LCL; Dzurak AS, 2009, Probe and Control of the Reservoir Density of States in Single-Electron Devices, http://dx.doi.org/10.48550/arxiv.0910.0731
Lim WH; Zwanenburg FA; Huebl H; Mottonen M; Chan KW; Morello A; Dzurak AS, 2009, Observation of the single-electron regime in a highly tunable silicon quantum dot, http://dx.doi.org/10.48550/arxiv.0910.0576
Cassidy MC; Dzurak AS; Clark RG; Petersson KD; Farrer I; Ritchie DA; Smith CG, 2009, Single Shot Charge Detection Using A Radio-Frequency Quantum Point Contact, http://dx.doi.org/10.48550/arxiv.0907.1010
Tan KY; Chan KW; Möttönen M; Morello A; Yang C; van Donkelaar J; Alves A; Pirkkalainen J-M; Jamieson DN; Clark RG; Dzurak AS, 2009, Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor, http://dx.doi.org/10.48550/arxiv.0905.4358
Morello A; Escott CC; Huebl H; van Beveren LHW; Hollenberg LCL; Jamieson DN; Dzurak AS; Clark RG, 2009, Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon, http://dx.doi.org/10.48550/arxiv.0904.1271
Lim WH; Huebl H; van Beveren LHW; Rubanov S; Spizzirri PG; Angus SJ; Clark RG; Dzurak AS, 2009, Electrostically defined few-electron double quantum dot in silicon, http://dx.doi.org/10.48550/arxiv.0904.0311
Mitic M; Petersson KD; Cassidy MC; Starrett RP; Gauja E; Ferguson AJ; Yang C; Jamieson DN; Clark RG; Dzurak AS, 2008, Bias spectroscopy and simultaneous SET charge state detection of Si:P double dots, http://dx.doi.org/10.48550/arxiv.0802.0375
Hudson FE; Ferguson AJ; Escott CC; Dzurak AS; Clark RG; Jamieson DN; Yang C, 2006, Gate-controlled charge transfer in Si:P double quantum dots, http://dx.doi.org/10.48550/arxiv.cond-mat/0612507
Chan VC; Buehler TM; Ferguson AJ; McCamey DR; Reilly DJ; Dzurak AS; Clark RG; Yang C; Jamieson DN, 2006, Ion implanted Si:P double-dot with gate tuneable interdot coupling, http://dx.doi.org/10.48550/arxiv.cond-mat/0602538
Hudson FE; Ferguson AJ; Yang C; Jamieson DN; Dzurak AS; Clark RG, 2005, Coulomb blockade in a nanoscale phosphorus-in-silicon island, http://dx.doi.org/10.48550/arxiv.cond-mat/0510488
Chan VC; McCamey DR; Buehler TM; Ferguson AJ; Reilly DJ; Dzurak AS; Clark RG; Yang C; Jamieson DN, 2005, An ion-implanted silicon single-electron transistor, http://dx.doi.org/10.48550/arxiv.cond-mat/0510373
Buehler TM; Chan V; Ferguson AJ; Dzurak AS; Hudson FE; Reilly DJ; Hamilton AR; Clark RG; Jamieson DN; Yang C; Pakes CI; Prawer S, 2005, Controlled single electron transfer between Si:P dots, http://dx.doi.org/10.48550/arxiv.cond-mat/0506594
Buehler TM; Reilly DJ; Starrett RP; Chan VC; Hamilton AR; Dzurak AS; Clark RG, 2004, Observing sub-microsecond telegraph noise with the radio frequency single electron transistor, http://dx.doi.org/10.48550/arxiv.cond-mat/0409568
Lee KH; Greentree AD; Dinale JP; Escott CC; Dzurak AS; Clark RG, 2004, Modeling Single Electron Transfer in Si:P Double Quantum Dots, http://dx.doi.org/10.48550/arxiv.quant-ph/0409077
Dzurak AS; Hollenberg LCL; Jamieson DN; Stanley FE; Yang C; Buhler TM; Chan V; Reilly DJ; Wellard C; Hamilton AR; Pakes CI; Ferguson AG; Gauja E; Prawer S; Milburn GJ; Clark RG, 2003, Charge-based silicon quantum computer architectures using controlled single-ion implantation, http://dx.doi.org/10.48550/arxiv.cond-mat/0306265
Hollenberg LCL; Dzurak AS; Wellard C; Hamilton AR; Reilly DJ; Milburn GJ; Clark RG, 2003, Charge-based quantum computing using single donors in semiconductors, http://dx.doi.org/10.48550/arxiv.cond-mat/0306235
Buehler TM; Reilly DJ; Starrett RP; Greentree AD; Hamilton AR; Dzurak AS; Clark RG, 2003, Single-Shot Readout with the Radio Frequency Single Electron Transistor in the Presence of Charge Noise, http://dx.doi.org/10.48550/arxiv.cond-mat/0304384
Buehler TM; Reilly DJ; Starrett RP; Court NA; Hamilton AR; Dzurak AS; Clark RG, 2003, Development and operation of the twin radio frequency single electron transistor for solid state qubit readout, http://dx.doi.org/10.48550/arxiv.cond-mat/0302085
Buehler TM; McKinnon RP; Lumpkin NE; Brenner R; Reilly DJ; Macks LD; Hamilton AR; Dzurak AS; Clark RG, 2002, Self-aligned fabrication process for silicon quantum computer devices, http://dx.doi.org/10.48550/arxiv.cond-mat/0208374
Buehler TM; Reilly DJ; Brenner R; Hamilton AR; Dzurak AS; Clark RG, 2002, Correlated charge detection for read-out of a solid state quantum computer, http://dx.doi.org/10.48550/arxiv.cond-mat/0207597
Reilly DJ; Buehler TM; O'Brien JL; Hamilton AR; Dzurak AS; Clark RG; Kane BE; Pfeiffer LN; West KW, 2002, Density dependent spin polarisation in ultra low-disorder quantum wires, http://dx.doi.org/10.48550/arxiv.cond-mat/0202309
O'Brien JL; Schofield SR; Simmons MY; Clark RG; Dzurak AS; Curson NJ; Kane BE; McAlpine NS; Hawley ME; Brown GW, 2001, Towards the fabrication of phosphorus qubits for a silicon quantum computer, http://dx.doi.org/10.48550/arxiv.cond-mat/0104569
Wiseman HM; Utami DW; Sun HB; Milburn GJ; Kane BE; Dzurak A; Clark RG, 2000, Quantum measurement of coherence in coupled quantum dots, http://dx.doi.org/10.48550/arxiv.cond-mat/0002279
Reilly DJ; Facer GR; Dzurak AS; Kane BE; Clark RG; Stiles PJ; O'Brien JL; Lumpkin NE; Pfeiffer LN; West KW, 2000, Many-body spin related phenomena in ultra-low-disorder quantum wires, http://dx.doi.org/10.48550/arxiv.cond-mat/0001174
Kane BE; McAlpine NS; Dzurak AS; Clark RG; Milburn GJ; Sun HB; Wiseman H, 1999, Single Spin Measurement using Single Electron Transistors to Probe Two Electron Systems, http://dx.doi.org/10.48550/arxiv.cond-mat/9903371
O'Brien JL; Nakagawa H; Dzurak AS; Clark RG; Kane BE; Lumpkin NE; Miura N; Mitchell EE; Goettee JD; Brooks JS; Rickel DG; Starrett RP, 1999, Experimental determination of B-T phase diagram of YBa_2Cu_3O_7-d to 150T for B perpendicular to c, http://dx.doi.org/10.48550/arxiv.cond-mat/9901341
Facer GR; Kane BE; Dzurak AS; Heron RJ; Lumpkin NE; Clark RG; Pfeiffer LN; West KW, 1998, Ballistic electron transport exceeding 160 microns in an undoped GaAs/AlGaAs FET, http://dx.doi.org/10.48550/arxiv.cond-mat/9805197
McKenzie RH; Athas GJ; Brooks JS; Clark RG; Dzurak AS; Newbury R; Starrett RP; Skougarevsky A; Tokumoto M; Kinoshita N; Kinoshita T; Tanaka Y, 1996, Magnetoresistance and magnetic breakdown in the quasi-two-dimensional conductors (BEDT-TTF)$_2$MHg(SCN)$_4$[M=K,Rb,Tl], http://dx.doi.org/10.48550/arxiv.cond-mat/9608041