By Scientia Professor Sven Rogge

Book Chapters

Verduijn J; Tettamanzi GC; Roggea S, 2013, 'Orbital structure and transport characteristics of single donors', in Prati E; Shinada T (ed.), Single-Atom Nanoelectronics, Pan Stanford Publishing, Stanford, pp. 211 - 230, http://dx.doi.org/10.1201/b14792-10

Mol J; Rogge S, 2013, 'Circuits with Single-Atom Devices', in Single-Atom Nanoelectronics, Pan Stanford Publishing, http://dx.doi.org/10.1201/b14792-15

Verduijn J; Tettamanzi G; Rogge S, 2013, 'Orbital Structure and Transport Characteristics of Single Donors', in Single-Atom Nanoelectronics, Pan Stanford Publishing, http://dx.doi.org/10.1201/b14792-10

Mol JA; Rogge S, 2013, 'Circuits with Single-Atom Devices', in Prati E; Shinada T (ed.), Single Atom Nanoelectronics, PAN STANFORD PUBLISHING PTE LTD, pp. 329 - 343, http://dx.doi.org/10.4032/9789814316699

, 2012, 'Dopant Metrology in Advanced FinFETs', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 417 - 443, http://dx.doi.org/10.1201/b13063-16

, 2012, 'New Tools for the Direct Characterisation of FinFETS', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 379 - 416, http://dx.doi.org/10.1201/b13063-15

Tettamanzi GC; Paul A; Lee S; Klimeck G; Rogge S, 2012, 'New tools for the direct characterisation of FinFETS', in CMOS Nanoelectronics: Innovative Devices, Architectures, and Applications, pp. 361

Tettamanzi G, 2012, 'Dopant Metrology in Advanced FinFETs', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 399 - 412, http://dx.doi.org/10.4032/9789814364034

Tettamanzi G, 2012, 'New Tools for the Direct Characterisation of FinFETS', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 361 - 398, http://dx.doi.org/10.4032/9789814364034

Journal articles

Villegas-Aguilar L; Polino E; Ghafari F; Quintino MT; Laverick KT; Berkman IR; Rogge S; Shalm LK; Tischler N; Cavalcanti EG; Slussarenko S; Pryde GJ, 2024, 'Nonlocality activation in a photonic quantum network', Nature Communications, 15, http://dx.doi.org/10.1038/s41467-024-47354-w

Zhang Y; Guan H; Sheng T; Chen R; Rogge S; Du J; Yin C, 2024, 'Fast Thermodynamic Study on a Silicon Nanotransistor at Cryogenic Temperatures', Nano Letters, 24, pp. 8859 - 8865, http://dx.doi.org/10.1021/acs.nanolett.4c01424

Voisin B; Salfi J; St Médar DD; Johnson BC; McCallum JC; Simmons MY; Rogge S, 2023, 'A solid-state quantum microscope for wavefunction control of an atom-based quantum dot device in silicon', Nature Electronics, 6, pp. 409 - 416, http://dx.doi.org/10.1038/s41928-023-00979-z

Zhang Y; Fan W; Yang J; Guan H; Zhang Q; Qin X; Duan C; de Boo GG; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2023, 'Photoionisation detection of a single Er3+ ion with sub-100-ns time resolution', National Science Review, 11, http://dx.doi.org/10.1093/nsr/nwad134

Berkman IR; Lyasota A; De Boo GG; Bartholomew JG; Johnson BC; McCallum JC; Xu BB; Xie S; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2023, 'Observing Er3+ Sites in Si with an in Situ Single-Photon Detector', Physical Review Applied, 19, http://dx.doi.org/10.1103/PhysRevApplied.19.014037

Mikhail D; Voisin B; St Medar DD; Buchs G; Rogge S; Rachel S, 2022, 'Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation', Physical Review B, 106, http://dx.doi.org/10.1103/PhysRevB.106.195408

Joch DJ; Slussarenko S; Wang Y; Pepper A; Xie S; Xu BB; Berkman IR; Rogge S; Pryde GJ, 2022, 'Certified random-number generation from quantum steering', Physical Review A, 106, http://dx.doi.org/10.1103/PhysRevA.106.L050401

Yang J; Wang J; Fan W; Zhang Y; Duan C; Hu G; De Boo GG; Johnson BC; McCallum JC; Rogge S; Yin C; Du J, 2022, 'Spectral Broadening of a Single Er3+ Ion in a Si Nanotransistor', Physical Review Applied, 18, http://dx.doi.org/10.1103/PhysRevApplied.18.034018

Yang J; Fan W; Zhang Y; Duan C; De Boo GG; Ahlefeldt RL; Longdell JJ; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, 'Zeeman and hyperfine interactions of a single Er 3+ 167 ion in Si', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.235306

Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2022, 'Valley population of donor states in highly strained silicon', Materials for Quantum Technology, 2, pp. 025002 - 025002, http://dx.doi.org/10.1088/2633-4356/ac5d1d

Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2022, 'Flopping-Mode Electric Dipole Spin Resonance in Phosphorus Donor Qubits in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054006

Osika EN; Kocsis S; Hsueh YL; Monir S; Chua C; Lam H; Voisin B; Simmons MY; Rogge S; Rahman R, 2022, 'Spin-Photon Coupling for Atomic Qubit Devices in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054007

Tankasala A; Voisin B; Kembrey Z; Salfi J; Hsueh YL; Osika EN; Rogge S; Rahman R, 2022, 'Shallow dopant pairs in silicon: An atomistic full configuration interaction study', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.155158

Hu G; Ahlefeldt RL; De Boo GG; Lyasota A; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2022, 'Single site optical spectroscopy of coupled Er³⁺ion pairs in silicon', Quantum Science and Technology, 7, http://dx.doi.org/10.1088/2058-9565/ac56c7

Hu G; De Boo GG; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2022, 'Erratum: Time-Resolved Photoionization Detection of a Single Er³⁺Ion in Silicon (Nano Letters (2022) 22:1 (396-401) DOI: 10.1021/acs.nanolett.1c04072)', Nano Letters, 22, pp. 1456 - 1456, http://dx.doi.org/10.1021/acs.nanolett.2c00173

Hu G; De Boo GG; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2022, 'Time-Resolved Photoionization Detection of a Single Er³⁺Ion in Silicon', Nano Letters, 22, pp. 396 - 401, http://dx.doi.org/10.1021/acs.nanolett.1c04072

Rogge S, 2022, 'From the Executive', Australian Physics, 59, pp. 7

Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2021, 'Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits', npj Quantum Information, 7, http://dx.doi.org/10.1038/s41534-021-00386-2

Voisin B; Salfi J; Rahman R; Rogge S, 2021, 'Novel characterization of dopant-based qubits', MRS Bulletin, 46, pp. 616 - 622, http://dx.doi.org/10.1557/s43577-021-00136-x

Xu BB; De Boo GG; Johnson BC; Rančić M; Bedoya AC; Morrison B; McCallum JC; Eggleton BJ; Sellars MJ; Yin C; Rogge S, 2021, 'Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators', Physical Review Applied, 15, http://dx.doi.org/10.1103/PhysRevApplied.15.044014

Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2021, 'Isotopic enrichment of silicon by high fluence 28Si- ion implantation', Physical Review Materials, 5, http://dx.doi.org/10.1103/PhysRevMaterials.5.014601

Kobayashi T; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov NV; Becker P; Pohl HJ; Simmons MY; Rogge S, 2021, 'Engineering long spin coherence times of spin–orbit qubits in silicon', Nature Materials, 20, pp. 38 - 42, http://dx.doi.org/10.1038/s41563-020-0743-3

Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2020, 'Valley interference and spin exchange at the atomic scale in silicon', Nature Communications, 11, http://dx.doi.org/10.1038/s41467-020-19835-1

Rogge S; Schiopu I; Munteanu A, 2020, 'Depth Estimation for Light-Field Images Using Stereo Matching and Convolutional Neural Networks', SENSORS, 20, http://dx.doi.org/10.3390/s20216188

De Boo GG; Yin C; Rančić M; Johnson BC; McCallum JC; Sellars MJ; Rogge S, 2020, 'High-resolution spectroscopy of individual erbium ions in strong magnetic fields', Physical Review B, 102, http://dx.doi.org/10.1103/PhysRevB.102.155309

Ng KSH; Voisin B; Johnson BC; McCallum JC; Salfi J; Rogge S, 2020, 'Scanned Single-Electron Probe inside a Silicon Electronic Device', ACS Nano, 14, pp. 9449 - 9455, http://dx.doi.org/10.1021/acsnano.0c00736

Rogge S, 2020, 'The role of science in the international response to COVID-19 and the imminent cuts to stem education', Australian Physics, 57, pp. 7

Everts JR; King GGG; Lambert NJ; Kocsis S; Rogge S; Longell JJ, 2020, 'Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare-earth ion spins', Physical Review B, 101, http://dx.doi.org/10.1103/PhysRevB.101.214414

Bayat A; Voisin B; Buchs G; Salfi J; Rogge S; Bose S, 2020, 'Certification of spin-based quantum simulators', Physical Review A, 101, http://dx.doi.org/10.1103/PhysRevA.101.052344

嵩 小; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov N; Becker P; Pohl H-J; Simmons MY; Rogge S, 2019, 'シリコン中のアクセプタ不純物スピン状態の制御による長いコヒーレンス時間の実現', , pp. 265 - 265, http://dx.doi.org/10.11316/jpsgaiyo.73.2.0_265

Philippopoulos P; Chesi S; Salfi J; Rogge S; Coish WA, 2019, 'Hole spin echo envelope modulations', Physical Review B, 100, http://dx.doi.org/10.1103/PhysRevB.100.125402

Zhang Q; Hu G; De Boo GG; Rančić M; Johnson BC; McCallum JC; Du J; Sellars MJ; Yin C; Rogge S, 2019, 'Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors', Nano Letters, 19, pp. 5025 - 5030, http://dx.doi.org/10.1021/acs.nanolett.9b01281

Zhang Y; Shi L; Hu D; Chen S; Xie S; Lu Y; Cao Y; Zhu Z; Jin L; Guan BO; Rogge S; Li X, 2019, 'Full-visible multifunctional aluminium metasurfaces by: In situ anisotropic thermoplasmonic laser printing', Nanoscale Horizons, 4, pp. 601 - 609, http://dx.doi.org/10.1039/c9nh00003h

van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Laviéville R; Simmons MY; Rogge S, 2018, 'Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor', Science Advances, 4, http://dx.doi.org/10.1126/sciadv.aat9199

Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, 'Single-Shot Single-Gate rf Spin Readout in Silicon', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.041032

嵩 小; van der Heijden J; Salfi J; House MG; Johnson BC; McCallum JC; Riemann H; Abrosimov N; Becker P; Pohl H-J; Simmons MY; Rogge S, 2018, 'Spin Echo Study of Boron in 28Si at Millikelvin Temperature', , pp. 1023 - 1023, http://dx.doi.org/10.11316/jpsgaiyo.72.2.0_1023

Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2018, 'Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.031049

Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, 'Gigahertz Single-Electron Pumping Mediated by Parasitic States', Nano Letters, 18, pp. 4141 - 4147, http://dx.doi.org/10.1021/acs.nanolett.8b00874

Abadillo-Uriel JC; Salfi J; Hu X; Rogge S; Calderón MJ; Culcer D, 2018, 'Entanglement control and magic angles for acceptor qubits in Si', Applied Physics Letters, 113, http://dx.doi.org/10.1063/1.5036521

Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2018, 'Two-electron states of a group-V donor in silicon from atomistic full configuration interactions', Physical Review B, 97, pp. 195301, http://dx.doi.org/10.1103/PhysRevB.97.195301

Usman M; Voisin B; Salfi J; Rogge S; Hollenberg LCL, 2017, 'Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon', Nanoscale, 9, pp. 17013 - 17019, http://dx.doi.org/10.1039/c7nr05081j

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