By Scientia Professor Sven Rogge

Book Chapters

Verduijn J; Tettamanzi GC; Roggea S, 2013, 'Orbital structure and transport characteristics of single donors', in Prati E; Shinada T (ed.), Single-Atom Nanoelectronics, Pan Stanford Publishing, Stanford, pp. 211 - 230, http://dx.doi.org/10.1201/b14792-10

Verduijn J; Tettamanzi G; Rogge S, 2013, 'Orbital Structure and Transport Characteristics of Single Donors', in Single-Atom Nanoelectronics, Pan Stanford Publishing, http://dx.doi.org/10.1201/b14792-10

Mol JA; Rogge S, 2013, 'Circuits with Single-Atom Devices', in Prati E; Shinada T (ed.), Single Atom Nanoelectronics, PAN STANFORD PUBLISHING PTE LTD, pp. 329 - 343, http://dx.doi.org/10.4032/9789814316699

2012, 'New Tools for the Direct Characterisation of FinFETS', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 379 - 416, http://dx.doi.org/10.1201/b13063-15

Tettamanzi GC; Paul A; Lee S; Klimeck G; Rogge S, 2012, 'New tools for the direct characterisation of FinFETS', in CMOS Nanoelectronics: Innovative Devices, Architectures, and Applications, pp. 361

Tettamanzi G, 2012, 'Dopant Metrology in Advanced FinFETs', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 399 - 412, http://dx.doi.org/10.4032/9789814364034

Tettamanzi G, 2012, 'New Tools for the Direct Characterisation of FinFETS', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 361 - 398, http://dx.doi.org/10.4032/9789814364034

Journal articles

Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2021, 'Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits', npj Quantum Information, vol. 7, http://dx.doi.org/10.1038/s41534-021-00386-2

Voisin B; Salfi J; Rahman R; Rogge S, 2021, 'Novel characterization of dopant-based qubits', MRS Bulletin, vol. 46, pp. 616 - 622, http://dx.doi.org/10.1557/s43577-021-00136-x

Xu BB; De Boo GG; Johnson BC; Rančić M; Bedoya AC; Morrison B; McCallum JC; Eggleton BJ; Sellars MJ; Yin C; Rogge S, 2021, 'Ultrashallow Junction Electrodes in Low-Loss Silicon Microring Resonators', Physical Review Applied, vol. 15, http://dx.doi.org/10.1103/PhysRevApplied.15.044014

Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2021, 'Isotopic enrichment of silicon by high fluence 28Si- ion implantation', Physical Review Materials, vol. 5, http://dx.doi.org/10.1103/PhysRevMaterials.5.014601

Kobayashi T; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov NV; Becker P; Pohl HJ; Simmons MY; Rogge S, 2021, 'Engineering long spin coherence times of spin–orbit qubits in silicon', Nature Materials, vol. 20, pp. 38 - 42, http://dx.doi.org/10.1038/s41563-020-0743-3

Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2020, 'Valley interference and spin exchange at the atomic scale in silicon', Nature Communications, vol. 11, pp. 6124, http://dx.doi.org/10.1038/s41467-020-19835-1

De Boo GG; Yin C; Rančić M; Johnson BC; McCallum JC; Sellars MJ; Rogge S, 2020, 'High-resolution spectroscopy of individual erbium ions in strong magnetic fields', Physical Review B, vol. 102, http://dx.doi.org/10.1103/PhysRevB.102.155309

Ng KSH; Voisin B; Johnson BC; McCallum JC; Salfi J; Rogge S, 2020, 'Scanned Single-Electron Probe inside a Silicon Electronic Device', ACS Nano, vol. 14, pp. 9449 - 9455, http://dx.doi.org/10.1021/acsnano.0c00736

Rogge S, 2020, 'The role of science in the international response to COVID-19 and the imminent cuts to stem education', Australian Physics, vol. 57, pp. 7

Everts JR; King GGG; Lambert NJ; Kocsis S; Rogge S; Longell JJ, 2020, 'Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare-earth ion spins', Physical Review B, vol. 101, http://dx.doi.org/10.1103/PhysRevB.101.214414

Bayat A; Voisin B; Buchs G; Salfi J; Rogge S; Bose S, 2020, 'Certification of spin-based quantum simulators', Physical Review A, vol. 101, http://dx.doi.org/10.1103/PhysRevA.101.052344

嵩 小; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov N; Becker P; Pohl H-J; Simmons MY; Rogge S, 2019, 'シリコン中のアクセプタ不純物スピン状態の制御による長いコヒーレンス時間の実現', , pp. 265 - 265, http://dx.doi.org/10.11316/jpsgaiyo.73.2.0_265

Philippopoulos P; Chesi S; Salfi J; Rogge S; Coish WA, 2019, 'Hole spin echo envelope modulations', Physical Review B, vol. 100, http://dx.doi.org/10.1103/PhysRevB.100.125402

Zhang Q; Hu G; De Boo GG; Rančić M; Johnson BC; McCallum JC; Du J; Sellars MJ; Yin C; Rogge S, 2019, 'Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors', Nano Letters, vol. 19, pp. 5025 - 5030, http://dx.doi.org/10.1021/acs.nanolett.9b01281

Zhang Y; Shi L; Hu D; Chen S; Xie S; Lu Y; Cao Y; Zhu Z; Jin L; Guan BO; Rogge S; Li X, 2019, 'Full-visible multifunctional aluminium metasurfaces by: In situ anisotropic thermoplasmonic laser printing', Nanoscale Horizons, vol. 4, pp. 601 - 609, http://dx.doi.org/10.1039/c9nh00003h

van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Laviéville R; Simmons MY; Rogge S, 2018, 'Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor', Science Advances, vol. 4, pp. eaat9199, http://dx.doi.org/10.1126/sciadv.aat9199

Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, 'Single-Shot Single-Gate rf Spin Readout in Silicon', Physical Review X, vol. 8, http://dx.doi.org/10.1103/PhysRevX.8.041032

嵩 小; van der Heijden J; Salfi J; House MG; Johnson BC; McCallum JC; Riemann H; Abrosimov N; Becker P; Pohl H-J; Simmons MY; Rogge S, 2018, 'Spin Echo Study of Boron in 28Si at Millikelvin Temperature', , pp. 1023 - 1023, http://dx.doi.org/10.11316/jpsgaiyo.72.2.0_1023

Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2018, 'Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots', Physical Review X, vol. 8, http://dx.doi.org/10.1103/PhysRevX.8.031049

Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, 'Gigahertz Single-Electron Pumping Mediated by Parasitic States', Nano Letters, vol. 18, pp. 4141 - 4147, http://dx.doi.org/10.1021/acs.nanolett.8b00874

Abadillo-Uriel JC; Salfi J; Hu X; Rogge S; Calderón MJ; Culcer D, 2018, 'Entanglement control and magic angles for acceptor qubits in Si', Applied Physics Letters, vol. 113, http://dx.doi.org/10.1063/1.5036521

Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2018, 'Two-electron states of a group-V donor in silicon from atomistic full configuration interactions', Physical Review B, vol. 97, http://dx.doi.org/10.1103/PhysRevB.97.195301

Usman M; Voisin B; Salfi J; Rogge S; Hollenberg LCL, 2017, 'Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon', Nanoscale, vol. 9, pp. 17013 - 17019, http://dx.doi.org/10.1039/c7nr05081j

Fresch B; Bocquel J; Hiluf D; Rogge S; Levine RD; Remacle F, 2017, 'Implementation of Multivariable Logic Functions in Parallel by Electrically Addressing a Molecule of Three Dopants in Silicon', ChemPhysChem, vol. 18, pp. 1790 - 1797, http://dx.doi.org/10.1002/cphc.201700222

Klymenko MV; Rogge S; Remacle F, 2017, 'Electronic states and valley-orbit coupling in linear and planar molecules formed by coupled P donors in silicon', Physical Review B, vol. 95, http://dx.doi.org/10.1103/PhysRevB.95.205301

Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies', ACS Nano, vol. 11, pp. 2444 - 2451, http://dx.doi.org/10.1021/acsnano.6b06362

Van Der Heijden J; Tettamanzi GC; Rogge S, 2017, 'Dynamics of a single-atom electron pump', Scientific Reports, vol. 7, http://dx.doi.org/10.1038/srep44371

Fresch B; Bocquel J; Rogge S; Levine RD; Remacle F, 2017, 'A Probabilistic Finite State Logic Machine Realized Experimentally on a Single Dopant Atom', Nano Letters, vol. 17, pp. 1846 - 1852, http://dx.doi.org/10.1021/acs.nanolett.6b05149

Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies (vol 11, pg 2444, 2017)', ACS NANO, vol. 11, pp. 3420 - 3420, http://dx.doi.org/10.1021/acsnano.6b08154

Agundez RR; Hill CD; Hollenberg LCL; Rogge S; Blaauboer M, 2017, 'Superadiabatic quantum state transfer in spin chains', Physical Review A, vol. 95, http://dx.doi.org/10.1103/PhysRevA.95.012317

House MG; Bartlett I; Pakkiam P; Koch M; Peretz E; Van Der Heijden J; Kobayashi T; Rogge S; Simmons MY, 2016, 'High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation', Physical Review Applied, vol. 6, http://dx.doi.org/10.1103/PhysRevApplied.6.044016

Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LCL, 2016, 'Spatial metrology of dopants in silicon with exact lattice site precision', Nature Nanotechnology, vol. 11, pp. 763 - 768, http://dx.doi.org/10.1038/nnano.2016.83

Salfi J; Mol JA; Culcer D; Rogge S, 2016, 'Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon', Physical Review Letters, vol. 116, http://dx.doi.org/10.1103/PhysRevLett.116.246801

Salfi J; Tong M; Rogge S; Culcer D, 2016, 'Quantum computing with acceptor spins in silicon', Nanotechnology, vol. 27, http://dx.doi.org/10.1088/0957-4484/27/24/244001

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, vol. 7, http://dx.doi.org/10.1038/ncomms11342

Kobayashi T; Van Der Heijden J; House MG; Hile SJ; Asshoff P; Gonzalez-Zalba MF; Vinet M; Simmons MY; Rogge S, 2016, 'Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system', Applied Physics Letters, vol. 108, http://dx.doi.org/10.1063/1.4945736

Saraiva AL; Salfi J; Bocquel J; Voisin B; Rogge S; Capaz RB; Calderón MJ; Koiller B, 2016, 'Donor wave functions in Si gauged by STM images', Physical Review B, vol. 93, http://dx.doi.org/10.1103/PhysRevB.93.045303

Fernandez-Gonzalvo X; Chen YH; Yin C; Rogge S; Longdell JJ, 2015, 'Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal', Physical Review A - Atomic, Molecular, and Optical Physics, vol. 92, http://dx.doi.org/10.1103/PhysRevA.92.062313

House MG; Kobayashi T; Weber B; Hile SJ; Watson TF; Van Der Heijden J; Rogge S; Simmons MY, 2015, 'Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots', Nature Communications, vol. 6, http://dx.doi.org/10.1038/ncomms9848

Klymenko MV; Rogge S; Remacle F, 2015, 'Multivalley envelope function equations and effective potentials for phosphorus impurity in silicon', Physical Review B - Condensed Matter and Materials Physics, vol. 92, http://dx.doi.org/10.1103/PhysRevB.92.195302

Hill CD; Peretz E; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY; Hollenberg LCL, 2015, 'Quantum Computing: A surface code quantum computer in silicon', Science Advances, vol. 1, http://dx.doi.org/10.1126/sciadv.1500707

Hile SJ; House MG; Peretz E; Verduijn J; Widmann D; Kobayashi T; Rogge S; Simmons MY, 2015, 'Radio frequency reflectometry and charge sensing of a precision placed donor in silicon', Applied Physics Letters, vol. 107, http://dx.doi.org/10.1063/1.4929827

Purches WE; Rossi A; Zhao R; Kafanov S; Duty TL; Dzurak AS; Rogge S; Tettamanzi GC, 2015, 'A planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures', Applied Physics Letters, vol. 107, http://dx.doi.org/10.1063/1.4928589

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