By Scientia Professor Sven Rogge

Preprints

Lansbergen GP; Rahman R; Verduijn J; Tettamanzi GC; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2011, Lifetime enhanced transport in silicon due to spin and valley blockade, http://dx.doi.org/10.48550/arxiv.1008.1381

Rahman R; Lansbergen GP; Verduijn J; Tettamanzi GC; Park SH; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2011, Electric field reduced charging energies and two-electron bound excited states of single donors in silicon, http://dx.doi.org/10.48550/arxiv.1107.2701

Rahman R; Verduijn J; Kharche N; Lansbergen GP; Klimeck G; Hollenberg LCL; Rogge S, 2011, Engineered valley-orbit splittings in quantum confined nanostructures in silicon, http://dx.doi.org/10.48550/arxiv.1102.5311

Paul A; Tettamanzi GC; Lee S; Mehrotra S; Colleart N; Biesemans S; Rogge S; Klimeck G, 2011, Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs, http://dx.doi.org/10.48550/arxiv.1102.0140

Tettamanzi GC; Paul A; Lee S; Mehrotra SR; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs, http://dx.doi.org/10.48550/arxiv.1011.2582

Johnson BC; Tettamanzi GC; Alves ADC; Thompson S; Yang C; Verduijn J; Mol JA; Wacquez R; Vinet M; Sanquer M; Rogge S; Jamieson DN, 2010, Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation, http://dx.doi.org/10.48550/arxiv.1007.5190

Calderon MJ; Verduijn J; Lansbergen GP; Tettamanzi GC; Rogge S; Koiller B, 2010, Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch, http://dx.doi.org/10.48550/arxiv.1005.1237

Tettamanzi GC; Paul A; Lansbergen GP; Verduijn J; Lee S; Collaert N; Biesemans S; Klimeck G; Rogge S, 2010, Thermionic Emission as a tool to study transport in undoped nFinFETs, http://dx.doi.org/10.48550/arxiv.1003.5441

Verduijn J; Tettamanzi GC; Lansbergen GP; Collaert N; Biesemans S; Rogge S, 2009, Coherent transport through a double donor system in silicon, http://dx.doi.org/10.48550/arxiv.0912.2196

Gasseller M; Loo R; Harrison JF; Caymax M; Rogge S; Tessmer SH, 2009, Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon, http://dx.doi.org/10.48550/arxiv.0904.2617

Lansbergen GP; Tettamanzi GC; Verduijn J; Collaert N; Biesemans S; Blaauboer M; Rogge S, 2009, Tunable Kondo effect in a single donor atom, http://dx.doi.org/10.48550/arxiv.0909.5602

Rahman R; Park SH; Boykin TB; Klimeck G; Rogge S; Hollenberg LCL, 2009, Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors, http://dx.doi.org/10.48550/arxiv.0905.3200

Rahman R; Lansbergen GP; Park SH; Verduijn J; Klimeck G; Rogge S; Hollenberg LCL, 2009, Orbital Stark effect and quantum confinement transition of donors in silicon, http://dx.doi.org/10.48550/arxiv.0904.4281

Craciun MF; Giovannetti G; Rogge S; Brocks G; Morpurgo AF; Brink JVD, 2008, Evidence for the formation of a Mott state in potassium-intercalated pentacene, http://dx.doi.org/10.48550/arxiv.0802.2813

Sellier H; Lansbergen GP; Caro J; Collaert N; Ferain I; Jurczak M; Biesemans S; Rogge S, 2007, Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors, http://dx.doi.org/10.48550/arxiv.cond-mat/0603430

Sellier H; Lansbergen GP; Caro J; Collaert N; Ferain I; Jurczak M; Biesemans S; Rogge S, 2006, Transport spectroscopy of a single dopant in a gated silicon nanowire, http://dx.doi.org/10.48550/arxiv.cond-mat/0608159

Craciun MF; Rogge S; Morpurgo AF, 2006, Evolution of the conductivity of potassium-doped pentacene films, http://dx.doi.org/10.48550/arxiv.cond-mat/0603261

Craciun MF; Rogge S; Morpurgo AF, 2006, Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped Metal-Phthalocyanine compounds, http://dx.doi.org/10.48550/arxiv.cond-mat/0602329

Craciun MF; Rogge S; Boer MJLD; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2006, Electronic transport through electron-doped Metal-Phthalocyanine Materials, http://dx.doi.org/10.48550/arxiv.cond-mat/0401036

Snijders PC; Rogge S; Weitering HH, 2006, Competing periodicities in fractionally filled one-dimensional bands, http://dx.doi.org/10.48550/arxiv.cond-mat/0510574

Snijders PC; Gonzalez C; Rogge S; Perez R; Ortega J; Flores F; Weitering HH, 2005, Ga-induced atom wire formation and passivation of stepped Si(112), http://dx.doi.org/10.48550/arxiv.cond-mat/0505343

de Boer RWI; Stassen AF; Craciun MF; Mulder CL; Molinari A; Rogge S; Morpurgo AF, 2005, Ambipolar Cu- and Fe-Phthalocyanine single-crystal field-effect transistors, http://dx.doi.org/10.48550/arxiv.cond-mat/0503282

Gonzalez C; Snijders PC; Ortega J; Perez R; Flores F; Rogge S; Weitering HH, 2004, Formation of atom wires on vicinal silicon, http://dx.doi.org/10.48550/arxiv.cond-mat/0404285

Smit GDJ; Rogge S; Caro J; Klapwijk TM, 2003, Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics, http://dx.doi.org/10.48550/arxiv.cond-mat/0309137

Caro J; Vink ID; Smit GDJ; Rogge S; Klapwijk TM, 2003, Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier, http://dx.doi.org/10.48550/arxiv.cond-mat/0309139

Smit GDJ; Rogge S; Caro J; Klapwijk TM, 2003, Gate-induced ionization of single dopant atoms, http://dx.doi.org/10.48550/arxiv.cond-mat/0309134

Smit GDJ; Rogge S; Caro J; Klapwijk TM, 2003, Group theoretical analysis of double acceptors in a magnetic field: identification of the Si:B^+ ground state, http://dx.doi.org/10.48550/arxiv.cond-mat/0309136

Smit GDJ; Rogge S; Klapwijk TM, 2002, Scaling of nano-Schottky-diodes, http://dx.doi.org/10.48550/arxiv.cond-mat/0202401

Rogge S; Durkut M; Klapwijk TM, 2002, Single domain transport measurements of C60 films, http://dx.doi.org/10.48550/arxiv.cond-mat/0206221

Smit GDJ; Rogge S; Klapwijk TM, 2002, Enhanced tunneling across nanometer-scale metal-semiconductor interfaces, http://dx.doi.org/10.48550/arxiv.cond-mat/0110256

Castelletto S; Lyasota A; Bader J; Lim SQ; Johnson B; McCallum J; Li Q; Rogge S, Narrow magneto-optical transitions in Erbium implanted silicon carbide-on-insulator, http://dx.doi.org/10.21203/rs.3.rs-7922873/v1

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