By Scientia Professor Sven Rogge

Preprints

Gasseller M; Loo R; Harrison JF; Caymax M; Rogge S; Tessmer SH, 2009, Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon, http://dx.doi.org/10.48550/arxiv.0904.2617

Craciun MF; Giovannetti G; Rogge S; Brocks G; Morpurgo AF; Brink JVD, 2008, Evidence for the formation of a Mott state in potassium-intercalated pentacene, http://dx.doi.org/10.48550/arxiv.0802.2813

Sellier H; Lansbergen GP; Caro J; Collaert N; Ferain I; Jurczak M; Biesemans S; Rogge S, 2006, Transport spectroscopy of a single dopant in a gated silicon nanowire, http://dx.doi.org/10.48550/arxiv.cond-mat/0608159

Sellier H; Lansbergen GP; Caro J; Collaert N; Ferain I; Jurczak M; Biesemans S; Rogge S, 2006, Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors, http://dx.doi.org/10.48550/arxiv.cond-mat/0603430

Craciun MF; Rogge S; Morpurgo AF, 2006, Evolution of the conductivity of potassium-doped pentacene films, http://dx.doi.org/10.48550/arxiv.cond-mat/0603261

Craciun MF; Rogge S; Morpurgo AF, 2006, Correlation between molecular orbitals and doping dependence of the electrical conductivity in electron-doped Metal-Phthalocyanine compounds, http://dx.doi.org/10.48550/arxiv.cond-mat/0602329

Snijders PC; Rogge S; Weitering HH, 2005, Competing periodicities in fractionally filled one-dimensional bands, http://dx.doi.org/10.48550/arxiv.cond-mat/0510574

Snijders PC; Gonzalez C; Rogge S; Perez R; Ortega J; Flores F; Weitering HH, 2005, Ga-induced atom wire formation and passivation of stepped Si(112), http://dx.doi.org/10.48550/arxiv.cond-mat/0505343

de Boer RWI; Stassen AF; Craciun MF; Mulder CL; Molinari A; Rogge S; Morpurgo AF, 2005, Ambipolar Cu- and Fe-Phthalocyanine single-crystal field-effect transistors, http://dx.doi.org/10.48550/arxiv.cond-mat/0503282

Gonzalez C; Snijders PC; Ortega J; Perez R; Flores F; Rogge S; Weitering HH, 2004, Formation of atom wires on vicinal silicon, http://dx.doi.org/10.48550/arxiv.cond-mat/0404285

Craciun MF; Rogge S; Boer MJLD; Margadonna S; Prassides K; Iwasa Y; Morpurgo AF, 2004, Electronic transport through electron-doped Metal-Phthalocyanine Materials, http://dx.doi.org/10.48550/arxiv.cond-mat/0401036

Smit GDJ; Rogge S; Caro J; Klapwijk TM, 2003, Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics, http://dx.doi.org/10.48550/arxiv.cond-mat/0309137

Caro J; Vink ID; Smit GDJ; Rogge S; Klapwijk TM, 2003, Direct observation by resonant tunneling of the B^+ level in a delta-doped silicon barrier, http://dx.doi.org/10.48550/arxiv.cond-mat/0309139

Smit GDJ; Rogge S; Caro J; Klapwijk TM, 2003, Gate-induced ionization of single dopant atoms, http://dx.doi.org/10.48550/arxiv.cond-mat/0309134

Smit GDJ; Rogge S; Caro J; Klapwijk TM, 2003, Group theoretical analysis of double acceptors in a magnetic field: identification of the Si:B^+ ground state, http://dx.doi.org/10.48550/arxiv.cond-mat/0309136

Rogge S; Durkut M; Klapwijk TM, 2002, Single domain transport measurements of C60 films, http://dx.doi.org/10.48550/arxiv.cond-mat/0206221

Smit GDJ; Rogge S; Klapwijk TM, 2002, Scaling of nano-Schottky-diodes, http://dx.doi.org/10.48550/arxiv.cond-mat/0202401

Smit GDJ; Rogge S; Klapwijk TM, 2001, Enhanced tunneling across nanometer-scale metal-semiconductor interfaces, http://dx.doi.org/10.48550/arxiv.cond-mat/0110256

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