By Scientia Professor Sven Rogge

Conference Papers

Verduijn J; Lansbergen GP; Tettamanzi GC; Rahman R; Biesemans S; Colleart N; Klimeck G; L. Hollenberg LC; Rogge S, 2009, 'From Single-atom Spectroscopy to Lifetime Enhanced Triplet Transport in MOSFETs', in Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, The Japan Society of Applied Physics, presented at 2009 International Conference on Solid State Devices and Materials, 06 October 2009 - 09 October 2009, http://dx.doi.org/10.7567/ssdm.2009.k-1-1

Lansbergen GP; Rahman R; Wellard CJ; Caro J; Collaert N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Transport-based dopant metrology in advanced FinFETs', in Technical Digest - International Electron Devices Meeting, IEDM, http://dx.doi.org/10.1109/IEDM.2008.4796794

Lansbergen GP; Rahman R; Wellard CJ; Rutten PE; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Determination of the eigenstates and wavefunctions of a single gated As donor', in Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008, pp. 164 - 167, http://dx.doi.org/10.1109/ICONN.2008.4639272

Lansbergen P; Rahman R; Caro J; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Transport spectroscopy of a single atom in a FinFET', in Journal of Physics: Conference Series, http://dx.doi.org/10.1088/1742-6596/109/1/012003

Nguyen MH; Rogge S; Caro J; van der Drift E; Salemink H, 2008, 'Mach-Zehnder interferometer based on collimation effect of photonic crystal', in Optics InfoBase Conference Papers, http://dx.doi.org/10.1364/ipnra.2008.ima5

Lansbergen GP; Sellier H; Caro J; Collaert N; Ferain I; Jurczak M; Biesemans S; Rogge S, 2007, 'One-dimensional sub-threshold channels in nanoscale triple-gate silicon transistors', in AIP Conference Proceedings, pp. 1397 - 1398, http://dx.doi.org/10.1063/1.2730426

Lansbergen GP; Sellier H; Collaer N; Ferain I; Jurczak M; Biesemans S; Caro J; Rogge S, 2006, 'Single-dopant spectroscopy and sub-threshold channels at the corners of triple-gate FinFETs', in 2006 INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY, VOLS 1 AND 2, IEEE, AUSTRALIA, Brisbane, pp. 675 - +, presented at International Conference on Nanoscience and Nanotechnology, AUSTRALIA, Brisbane, 03 July 2006 - 07 July 2006, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000249051500174&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

Caro J; Smit GDJ; Sellier H; Loo R; Caymax M; Rogge S; Klapwijk TM, 2005, 'Towards tunneling through a single dopant atom', in AIP Conference Proceedings, pp. 1587 - 1588, http://dx.doi.org/10.1063/1.1994725

Vranken H; Hapke F; Rogge S; Chindamo D; Volkerink E, 2003, 'ATPG padding and ATE vector repeat per port for reducing test data volume', in INTERNATIONAL TEST CONFERENCE 2003, PROCEEDINGS, IEEE, NC, CHARLOTTE, pp. 1069 - 1078, presented at 34th International Test Conference, NC, CHARLOTTE, 28 September 2003 - 03 October 2003, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000186386600123&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

Bisch C; Rogge S; Mélin T; Janssen GCAM, 2000, 'Selective aluminum CVD on Si(100) from DMAH', in Materials Research Society Symposium - Proceedings, pp. 141 - 146, http://dx.doi.org/10.1557/PROC-580-141

Palasantzas G; Ilge B; Rogge S; Geerligs LJ, 1999, 'Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface', in Microelectronic Engineering, pp. 133 - 136, http://dx.doi.org/10.1016/S0167-9317(99)00035-0

TIGNER B; SALVINO DJ; ROGGE S; OSHEROFF DD, 1992, 'LOW-TEMPERATURE HISTORY-DEPENDENT DIELECTRIC-CONSTANT IN AMORPHOUS SIO2 AND SIO1.8 FILMS', in Meissner M; Pohl RO (ed.), PHONON SCATTERING IN CONDENSED MATTER VII, SPRINGER-VERLAG BERLIN, NY, CORNELL UNIV, ITHACA, pp. 285 - 286, presented at 7th International Conference on Phonon Scattering in Condensed Matter, NY, CORNELL UNIV, ITHACA, 03 August 1992 - 07 August 1992, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993BB68D00112&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

ROGGE SM, 1959, 'SENSITOMETRIC EVALUATION WITH BASIC DATA PROCESSING EQUIPMENT', in PHOTOGRAPHIC SCIENCE AND ENGINEERING, I S & T - SOC IMAGING SCIENCE TECHNOLOGY, pp. 250 - 250, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1959XG21500026&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

Patents

Voisin B; Salfi J; Rogge S, 2023, A quantum processing system, Patent No. Australia - 2019304104; Taiwan - I811402; United States - 11610985

Simmons M; Hollenberg L; Rogge S; Hile S; House M; Fuechsle M; Peretz E; Hill C, 2021, Advanced processing apparatus, Patent No. Australian 2021 pat no.2015252051

Simmons M; Hollenberg L; Hill C; Peretz E; Hile S; Fuechsle M; Rogge S, 2019, A Quantum Processor, Patent No. Australia patent no. 2015252050; Switzerland patent no. 3016034; Germany patent no. 602015048909.8; Spain patent no. E15192761; France patent no. 3016034; United Kingdom patent no. 3016034; Ireland patent no. 3016034; Netherlands patent no. 3016034, https://worldwide.espacenet.com/publicationDetails/biblio?II=1&ND=3&adjacent=true&locale=en_EP&FT=D&date=20160519&CC=AU&NR=2015252050A1&KC=A1

Simmons M; Hollenberg L; Rogge S; Hile S; House M; Fuechsle M; Peretz E; Hill C, 2019, Apparatus and method for quantum processing, Patent No. 10229365, http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=10229365.PN.&OS=PN/10229365&RS=PN/10229365

Mol J; Rogge S; Salfi J, 2017, Quantum computing with acceptor-based qubits, Australia, Patent No. 2014234949, https://worldwide.espacenet.com/publicationDetails/biblio?CC=AU&NR=2014234949B2&KC=B2&FT=D#

De Boo G; Mccallum J; Rancic M; Rogge S; Sellars M; Stavrias N; Yin C, 2017, Optical addressing of individual targets in solids, Patent No. 2013360022-B2, http://pericles.ipaustralia.gov.au/ols/auspat/pdfSource.do?fileQuery=%87%A0%A4%98%92%9Al%A0%A4%98%92%9AU%95%98%9B%94%9D%90%9C%94lp%84a_%60bbe__aaqaa_%60f_c_e%5D%9F%93%95U%93%9E%96l%93%9E%96

Rogge S; Sellars MJ; Yin C; McCallum JC; De Boo GG; Rancic M; Stavrias N, 2014, Optical addressing of individual targets in solids, Patent No. WO/2014/089621, Patent Agent:FB RICE & CO, http://patentscope.wipo.int/search/en/WO2014089621

Preprints

Villegas-Aguilar L; Polino E; Ghafari F; Quintino MT; Laverick K; Berkman IR; Rogge S; Shalm LK; Tischler N; Cavalcanti EG; Slussarenko S; Pryde GJ, 2023, Nonlocality activation in a photonic quantum network, , http://dx.doi.org/10.48550/arxiv.2309.06501

Berkman IR; Lyasota A; Boo GGD; Bartholomew JG; Lim SQ; Johnson BC; McCallum JC; Xu B-B; Xie S; Abrosimov NV; Pohl H-J; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2023, Millisecond electron spin coherence time for erbium ions in silicon, , http://arxiv.org/abs/2307.10021v2

Zhang Y; Fan W; Yang J; Guan H; Zhang Q; Qin X; Duan C; de Boo GG; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, Photoionization detection of a single Er$^{3+}$ ion with sub-100-ns time resolution, , http://dx.doi.org/10.48550/arxiv.2212.00440

Mikhail D; Voisin B; Medar DDS; Buchs G; Rogge S; Rachel S, 2022, Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation, , http://dx.doi.org/10.48550/arxiv.2208.03906

Yang J; Fan W; Zhang Y; Duan C; Boo GGD; Ahlefeldt RL; Longdell JJ; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, The Zeeman and hyperfine interactions of a single $^{167}Er^{3+}$ ion in Si, , http://dx.doi.org/10.1103/PhysRevB.105.235306

Yang J; Wang J; Fan W; Zhang Y; Duan C; Hu G; Boo GGD; Johnson BC; McCallum JC; Rogge S; Yin C; Du J, 2022, Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor, , http://dx.doi.org/10.1103/PhysRevApplied.18.034018

Joch DJ; Slussarenko S; Wang Y; Pepper A; Xie S; Xu B-B; Berkman IR; Rogge S; Pryde GJ, 2021, Certified Random Number Generation from Quantum Steering, , http://dx.doi.org/10.48550/arxiv.2111.09506

Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2021, Valley population of donor states in highly strained silicon, , http://dx.doi.org/10.48550/arxiv.2109.08540

Hu G; Ahlefeldt RL; de Boo GG; Lyasota A; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2021, Optical and Zeeman spectroscopy of individual Er ion pairs in silicon, , http://dx.doi.org/10.48550/arxiv.2108.07442

Berkman IR; Lyasota A; de Boo GG; Bartholomew JG; Johnson BC; McCallum JC; Xu B-B; Xie S; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2021, Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection, , http://dx.doi.org/10.48550/arxiv.2108.07090

Voisin B; Salfi J; Rahman R; Rogge S, 2021, Novel characterisation of dopant-based qubits, , http://dx.doi.org/10.48550/arxiv.2107.00784

Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2021, Valley interference and spin exchange at the atomic scale in silicon, , http://dx.doi.org/10.48550/arxiv.2105.10931

Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2021, Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon, , http://dx.doi.org/10.48550/arxiv.2105.02906

Osika EN; Kocsis S; Hsueh Y-L; Monir S; Chua C; Lam H; Voisin B; Rogge S; Rahman R, 2021, Spin-photon coupling for atomic qubit devices in silicon, , http://dx.doi.org/10.48550/arxiv.2105.02904

Xu B-B; de Boo GG; Johnson BC; Rančić M; Bedoya AC; Morrison B; McCallum JC; Eggleton BJ; Sellars MJ; Yin C; Rogge S, 2020, Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators, , http://dx.doi.org/10.48550/arxiv.2011.14792

Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2020, Isotopic enrichment of silicon by high fluence $^{28}$Si$^-$ ion implantation, , http://dx.doi.org/10.48550/arxiv.2009.08594

Ng KSH; Voisin B; Johnson BC; McCallum JC; Salfi J; Rogge S, 2020, Scanned single-electron probe inside a silicon electronic device, , http://dx.doi.org/10.48550/arxiv.2001.10225

de Boo GG; Yin C; Rančić M; Johnson BC; McCallum JC; Sellars M; Rogge S, 2019, High resolution spectroscopy of individual erbium ions in strong magnetic fields, , http://dx.doi.org/10.48550/arxiv.1912.05795

Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2019, Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits, , http://dx.doi.org/10.48550/arxiv.1911.11143

Everts J; King GGG; Lambert N; Kocsis S; Rogge S; Longdell JJ, 2019, Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare earth ion spins, , http://dx.doi.org/10.48550/arxiv.1911.11311

Philippopoulos P; Chesi S; Salfi J; Rogge S; Coish WA, 2019, Hole-Spin-Echo Envelope Modulations, , http://dx.doi.org/10.48550/arxiv.1906.11953

Bayat A; Voisin B; Buchs G; Salfi J; Rogge S; Bose S, 2019, Certification of spin-based quantum simulators, , http://dx.doi.org/10.48550/arxiv.1905.01724

Kobayashi T; Salfi J; van der Heijden J; Chua C; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov NV; Becker P; Pohl H-J; Simmons MY; Rogge S, 2018, Engineering long spin coherence times of spin-orbit systems, , http://dx.doi.org/10.48550/arxiv.1809.10859

Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, Single-shot single-gate RF spin readout in silicon, , http://dx.doi.org/10.48550/arxiv.1809.01802

Zhang Q; Hu G; de Boo GG; Rancic M; Johnson BC; McCallum JC; Du J; Sellars MJ; Yin C; Rogge S, 2018, Single rare-earth ions as atomic-scale probes in ultra-scaled transistors, , http://dx.doi.org/10.48550/arxiv.1803.01573

Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, Gigahertz Single-Electron Pumping Mediated by Parasitic States, , http://dx.doi.org/10.48550/arxiv.1803.00791

Usman M; Voisin B; Salfi J; Rogge S; Hollenberg LCL, 2017, Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon, , http://dx.doi.org/10.48550/arxiv.1706.09981

Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2017, Valley filtering and spatial maps of coupling between silicon donors and quantum dots, , http://dx.doi.org/10.48550/arxiv.1706.09261

Abadillo-Uriel JC; Salfi J; Hu X; Rogge S; Calderón MJ; Culcer D, 2017, Entanglement control and magic angles for acceptor qubits in Si, , http://dx.doi.org/10.48550/arxiv.1706.08858

Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2017, Two-electron states of a group V donor in silicon from atomistic full configuration interaction, , http://dx.doi.org/10.48550/arxiv.1703.04175

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