Select Publications

Conference Papers

Lansbergen GP; Rahman R; Wellard CJ; Rutten PE; Caro J; Woo I; Colleart N; Biesemans S; Klimeck G; Hollenberg LCL; Rogge S, 2008, 'Determination of the eigenstates and wavefunctions of a single gated As donor', in Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology, ICONN 2008, pp. 164 - 167, http://dx.doi.org/10.1109/ICONN.2008.4639272

Lansbergen P; Rahman R; Caro J; Biesemans S; Klimeck G; Hollenberg L; Rogge S, 2008, 'Transport spectroscopy of a single atom in a FinFET', in Journal of Physics: Conference Series, http://dx.doi.org/10.1088/1742-6596/109/1/012003

Nguyen MH; Rogge S; Caro J; van der Drift E; Salemink H, 2008, 'Mach-Zehnder interferometer based on collimation effect of photonic crystal', in Optics InfoBase Conference Papers, http://dx.doi.org/10.1364/ipnra.2008.ima5

Lansbergen GP; Sellier H; Caro J; Collaert N; Ferain I; Jurczak M; Biesemans S; Rogge S, 2007, 'One-dimensional sub-threshold channels in nanoscale triple-gate silicon transistors', in AIP Conference Proceedings, pp. 1397 - 1398, http://dx.doi.org/10.1063/1.2730426

Lansbergen GP; Sellier H; Collaer N; Ferain I; Jurczak M; Biesemans S; Caro J; Rogge S, 2006, 'Single-dopant spectroscopy and sub-threshold channels at the corners of triple-gate FinFETs', in 2006 INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY, VOLS 1 AND 2, IEEE, AUSTRALIA, Brisbane, pp. 675 - +, presented at International Conference on Nanoscience and Nanotechnology, AUSTRALIA, Brisbane, 03 July 2006 - 07 July 2006, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000249051500174&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

Caro J; Smit GDJ; Sellier H; Loo R; Caymax M; Rogge S; Klapwijk TM, 2005, 'Towards tunneling through a single dopant atom', in AIP Conference Proceedings, pp. 1587 - 1588, http://dx.doi.org/10.1063/1.1994725

Vranken H; Hapke F; Rogge S; Chindamo D; Volkerink E, 2003, 'ATPG padding and ATE vector repeat per port for reducing test data volume', in INTERNATIONAL TEST CONFERENCE 2003, PROCEEDINGS, IEEE, NC, CHARLOTTE, pp. 1069 - 1078, presented at 34th International Test Conference, NC, CHARLOTTE, 28 September 2003 - 03 October 2003, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000186386600123&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

Bisch C; Rogge S; Mélin T; Janssen GCAM, 2000, 'Selective aluminum CVD on Si(100) from DMAH', in Gonis A; Turchi PE A; Ardell AJ (eds.), Materials Research Society Symposium - Proceedings, MATERIALS RESEARCH SOCIETY, BOSTON, MA, pp. 141 - 146, presented at Symposium on Nucleation and Growth Processes in Materials held at the 1999 MRS Fall Meeting, BOSTON, MA, 29 November - 01 December 1999, http://dx.doi.org/10.1557/PROC-580-141

Palasantzas G; Ilge B; Rogge S; Geerligs LJ, 1999, 'Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface', in Microelectronic Engineering, pp. 133 - 136, http://dx.doi.org/10.1016/S0167-9317(99)00035-0

TIGNER B; SALVINO DJ; ROGGE S; OSHEROFF DD, 1992, 'LOW-TEMPERATURE HISTORY-DEPENDENT DIELECTRIC-CONSTANT IN AMORPHOUS SIO2 AND SIO1.8 FILMS', in Meissner M; Pohl RO (ed.), PHONON SCATTERING IN CONDENSED MATTER VII, SPRINGER-VERLAG BERLIN, NY, CORNELL UNIV, ITHACA, pp. 285 - 286, presented at 7th International Conference on Phonon Scattering in Condensed Matter, NY, CORNELL UNIV, ITHACA, 03 August 1992 - 07 August 1992, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1993BB68D00112&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

ROGGE SM, 1959, 'SENSITOMETRIC EVALUATION WITH BASIC DATA PROCESSING EQUIPMENT', in PHOTOGRAPHIC SCIENCE AND ENGINEERING, I S & T - SOC IMAGING SCIENCE TECHNOLOGY, pp. 250 - 250, https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1959XG21500026&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=891bb5ab6ba270e68a29b250adbe88d1

Patents

Simmons M; Hollenberg L; Rogge S; Hile S; House M; Fuechsle M; Peretz E; Hill C, 2021, Advanced processing apparatus, Patent No. Australian 2021 pat no.2015252051

Simmons M; Hollenberg L; Hill C; Peretz E; Hile S; Fuechsle M; Rogge S, 2019, A Quantum Processor, Patent No. Australia patent no. 2015252050; Switzerland patent no. 3016034; Germany patent no. 602015048909.8; Spain patent no. E15192761; France patent no. 3016034; United Kingdom patent no. 3016034; Ireland patent no. 3016034; Netherlands patent no. 3016034, https://worldwide.espacenet.com/publicationDetails/biblio?II=1&ND=3&adjacent=true&locale=en_EP&FT=D&date=20160519&CC=AU&NR=2015252050A1&KC=A1

Simmons M; Hollenberg L; Rogge S; Hile S; House M; Fuechsle M; Peretz E; Hill C, 2019, Apparatus and method for quantum processing, Patent No. 10229365, http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=10229365.PN.&OS=PN/10229365&RS=PN/10229365

Mol J; Rogge S; Salfi J, 2017, Quantum computing with acceptor-based qubits, Australia, Patent No. 2014234949, https://worldwide.espacenet.com/publicationDetails/biblio?CC=AU&NR=2014234949B2&KC=B2&FT=D#

De Boo G; Mccallum J; Rancic M; Rogge S; Sellars M; Stavrias N; Yin C, 2017, Optical addressing of individual targets in solids, Patent No. 2013360022-B2, http://pericles.ipaustralia.gov.au/ols/auspat/pdfSource.do?fileQuery=%87%A0%A4%98%92%9Al%A0%A4%98%92%9AU%95%98%9B%94%9D%90%9C%94lp%84a_%60bbe__aaqaa_%60f_c_e%5D%9F%93%95U%93%9E%96l%93%9E%96

Rogge S; Sellars MJ; Yin C; McCallum JC; De Boo GG; Rancic M; Stavrias N, 2014, Optical addressing of individual targets in solids, Patent No. WO/2014/089621, Patent Agent:FB RICE & CO, http://patentscope.wipo.int/search/en/WO2014089621

Preprints

Berkman IR; Lyasota A; Boo GGD; Bartholomew JG; Lim SQ; Johnson BC; McCallum JC; Xu B-B; Xie S; Abrosimov NV; Pohl H-J; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2023, Millisecond electron spin coherence time for erbium ions in silicon, , http://arxiv.org/abs/2307.10021v2

Zhang Y; Fan W; Yang J; Guan H; Zhang Q; Qin X; Duan C; de Boo GG; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, Photoionization detection of a single Er$^{3+}$ ion with sub-100-ns time resolution, , http://dx.doi.org/10.48550/arxiv.2212.00440

Mikhail D; Voisin B; Medar DDS; Buchs G; Rogge S; Rachel S, 2022, Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation, , http://dx.doi.org/10.48550/arxiv.2208.03906

Yang J; Fan W; Zhang Y; Duan C; Boo GGD; Ahlefeldt RL; Longdell JJ; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, The Zeeman and hyperfine interactions of a single $^{167}Er^{3+}$ ion in Si, , http://dx.doi.org/10.1103/PhysRevB.105.235306

Yang J; Wang J; Fan W; Zhang Y; Duan C; Hu G; Boo GGD; Johnson BC; McCallum JC; Rogge S; Yin C; Du J, 2022, Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor, , http://dx.doi.org/10.1103/PhysRevApplied.18.034018

Joch DJ; Slussarenko S; Wang Y; Pepper A; Xie S; Xu B-B; Berkman IR; Rogge S; Pryde GJ, 2021, Certified Random Number Generation from Quantum Steering, , http://dx.doi.org/10.48550/arxiv.2111.09506

Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2021, Valley population of donor states in highly strained silicon, , http://dx.doi.org/10.48550/arxiv.2109.08540

Hu G; Ahlefeldt RL; de Boo GG; Lyasota A; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2021, Optical and Zeeman spectroscopy of individual Er ion pairs in silicon, , http://dx.doi.org/10.48550/arxiv.2108.07442

Berkman IR; Lyasota A; de Boo GG; Bartholomew JG; Johnson BC; McCallum JC; Xu B-B; Xie S; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2021, Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection, , http://dx.doi.org/10.48550/arxiv.2108.07090

Voisin B; Salfi J; Rahman R; Rogge S, 2021, Novel characterisation of dopant-based qubits, , http://dx.doi.org/10.48550/arxiv.2107.00784

Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2021, Valley interference and spin exchange at the atomic scale in silicon, , http://dx.doi.org/10.48550/arxiv.2105.10931

Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2021, Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon, , http://dx.doi.org/10.48550/arxiv.2105.02906

Osika EN; Kocsis S; Hsueh Y-L; Monir S; Chua C; Lam H; Voisin B; Rogge S; Rahman R, 2021, Spin-photon coupling for atomic qubit devices in silicon, , http://dx.doi.org/10.48550/arxiv.2105.02904

Xu B-B; de Boo GG; Johnson BC; Rančić M; Bedoya AC; Morrison B; McCallum JC; Eggleton BJ; Sellars MJ; Yin C; Rogge S, 2020, Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators, , http://dx.doi.org/10.48550/arxiv.2011.14792

Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2020, Isotopic enrichment of silicon by high fluence $^{28}$Si$^-$ ion implantation, , http://dx.doi.org/10.48550/arxiv.2009.08594

Ng KSH; Voisin B; Johnson BC; McCallum JC; Salfi J; Rogge S, 2020, Scanned single-electron probe inside a silicon electronic device, , http://dx.doi.org/10.48550/arxiv.2001.10225

de Boo GG; Yin C; Rančić M; Johnson BC; McCallum JC; Sellars M; Rogge S, 2019, High resolution spectroscopy of individual erbium ions in strong magnetic fields, , http://dx.doi.org/10.48550/arxiv.1912.05795

Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2019, Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits, , http://dx.doi.org/10.48550/arxiv.1911.11143

Everts J; King GGG; Lambert N; Kocsis S; Rogge S; Longdell JJ, 2019, Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare earth ion spins, , http://dx.doi.org/10.48550/arxiv.1911.11311

Philippopoulos P; Chesi S; Salfi J; Rogge S; Coish WA, 2019, Hole-Spin-Echo Envelope Modulations, , http://dx.doi.org/10.48550/arxiv.1906.11953

Bayat A; Voisin B; Buchs G; Salfi J; Rogge S; Bose S, 2019, Certification of spin-based quantum simulators, , http://dx.doi.org/10.48550/arxiv.1905.01724

Kobayashi T; Salfi J; van der Heijden J; Chua C; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov NV; Becker P; Pohl H-J; Simmons MY; Rogge S, 2018, Engineering long spin coherence times of spin-orbit systems, , http://dx.doi.org/10.48550/arxiv.1809.10859

Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, Single-shot single-gate RF spin readout in silicon, , http://dx.doi.org/10.48550/arxiv.1809.01802

Zhang Q; Hu G; de Boo GG; Rancic M; Johnson BC; McCallum JC; Du J; Sellars MJ; Yin C; Rogge S, 2018, Single rare-earth ions as atomic-scale probes in ultra-scaled transistors, , http://dx.doi.org/10.48550/arxiv.1803.01573

Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, Gigahertz Single-Electron Pumping Mediated by Parasitic States, , http://dx.doi.org/10.48550/arxiv.1803.00791

Usman M; Voisin B; Salfi J; Rogge S; Hollenberg LCL, 2017, Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon, , http://dx.doi.org/10.48550/arxiv.1706.09981

Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2017, Valley filtering and spatial maps of coupling between silicon donors and quantum dots, , http://dx.doi.org/10.48550/arxiv.1706.09261

Abadillo-Uriel JC; Salfi J; Hu X; Rogge S; Calderón MJ; Culcer D, 2017, Entanglement control and magic angles for acceptor qubits in Si, , http://dx.doi.org/10.48550/arxiv.1706.08858

Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2017, Two-electron states of a group V donor in silicon from atomistic full configuration interaction, , http://dx.doi.org/10.48550/arxiv.1703.04175

van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Lavieville R; Simmons MY; Rogge S, 2017, Spin-orbit dynamics of single acceptor atoms in silicon, , http://dx.doi.org/10.48550/arxiv.1703.03538

Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies, , http://dx.doi.org/10.48550/arxiv.1702.08569

Klymenko MV; Rogge S; Remacle F, 2016, Linear and planar molecules formed by coupled P donors in silicon, , http://dx.doi.org/10.48550/arxiv.1611.07154

Klymenko MV; Rogge S; Remacle F, 2016, Multi-valley envelope function equations and effective potentials for P impurity in silicon, , http://dx.doi.org/10.48550/arxiv.1611.05908


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