By Scientia Professor Sven Rogge

Preprints

Schofield SR; Fisher AJ; Ginossar E; Lyding JW; Silver R; Fei F; Namboodiri P; Wyrick J; Masteghin MG; Cox DC; Murdin BN; Clowes SK; Keizer JG; Simmons MY; Stemp HG; Morello A; Voisin B; Rogge S; Wolkow RA; Livadaru L; Pitters J; Stock TJZ; Curson NJ; Butera RE; Pavlova TV; Jakob AM; Spemann D; Räcke P; Schmidt-Kaler F; Jamieson DN; Pratiush U; Duscher G; Kalinin SV; Kazazis D; Constantinou P; Aeppli G; Ekinci Y; Owen JHG; Fowler E; Moheimani SOR; Randall JN; Misra S; Ivie J; Allemang CR; Anderson EM; Bussmann E; Campbell Q; Gao X; Lu T-M; Schmucker SW, 2025, Roadmap on Atomic-scale Semiconductor Devices, http://dx.doi.org/10.1088/2399-1984/ada901

Polino E; Villegas-Aguilar L; Poderini D; Walk N; Ghafari F; Quintino MT; Lyasota A; Rogge S; Chaves R; Pryde GJ; Cavalcanti EG; Tischler N; Slussarenko S, 2024, Experimental quantum randomness enhanced by a quantum network, http://dx.doi.org/10.48550/arxiv.2412.16973

Villegas-Aguilar L; Polino E; Ghafari F; Quintino MT; Laverick K; Berkman IR; Rogge S; Shalm LK; Tischler N; Cavalcanti EG; Slussarenko S; Pryde GJ, 2023, Nonlocality activation in a photonic quantum network, http://dx.doi.org/10.48550/arxiv.2309.06501

Berkman IR; Lyasota A; Boo GGD; Bartholomew JG; Lim SQ; Johnson BC; McCallum JC; Xu B-B; Xie S; Abrosimov NV; Pohl H-J; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2023, Millisecond electron spin coherence time for erbium ions in silicon, http://arxiv.org/abs/2307.10021v2

Zhang Y; Fan W; Yang J; Guan H; Zhang Q; Qin X; Duan C; de Boo GG; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, Photoionization detection of a single Er$^{3+}$ ion with sub-100-ns time resolution, http://dx.doi.org/10.48550/arxiv.2212.00440

Mikhail D; Voisin B; Medar DDS; Buchs G; Rogge S; Rachel S, 2022, Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation, http://dx.doi.org/10.48550/arxiv.2208.03906

Yang J; Fan W; Zhang Y; Duan C; Boo GGD; Ahlefeldt RL; Longdell JJ; Johnson BC; McCallum JC; Sellars MJ; Rogge S; Yin C; Du J, 2022, The Zeeman and hyperfine interactions of a single $^{167}Er^{3+}$ ion in Si, http://dx.doi.org/10.1103/PhysRevB.105.235306

Yang J; Wang J; Fan W; Zhang Y; Duan C; Hu G; Boo GGD; Johnson BC; McCallum JC; Rogge S; Yin C; Du J, 2022, Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor, http://dx.doi.org/10.1103/PhysRevApplied.18.034018

Joch DJ; Slussarenko S; Wang Y; Pepper A; Xie S; Xu B-B; Berkman IR; Rogge S; Pryde GJ, 2021, Certified Random Number Generation from Quantum Steering, http://dx.doi.org/10.48550/arxiv.2111.09506

Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2021, Valley population of donor states in highly strained silicon, http://dx.doi.org/10.48550/arxiv.2109.08540

Hu G; Ahlefeldt RL; de Boo GG; Lyasota A; Johnson BC; McCallum JC; Sellars MJ; Yin C; Rogge S, 2021, Optical and Zeeman spectroscopy of individual Er ion pairs in silicon, http://dx.doi.org/10.48550/arxiv.2108.07442

Berkman IR; Lyasota A; de Boo GG; Bartholomew JG; Johnson BC; McCallum JC; Xu B-B; Xie S; Ahlefeldt RL; Sellars MJ; Yin C; Rogge S, 2021, Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection, http://dx.doi.org/10.48550/arxiv.2108.07090

Voisin B; Salfi J; Rahman R; Rogge S, 2021, Novel characterisation of dopant-based qubits, http://dx.doi.org/10.48550/arxiv.2107.00784

Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2021, Valley interference and spin exchange at the atomic scale in silicon, http://dx.doi.org/10.48550/arxiv.2105.10931

Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2021, Flopping-mode electric dipole spin resonance in phosphorus donor qubits in silicon, http://dx.doi.org/10.48550/arxiv.2105.02906

Osika EN; Kocsis S; Hsueh Y-L; Monir S; Chua C; Lam H; Voisin B; Rogge S; Rahman R, 2021, Spin-photon coupling for atomic qubit devices in silicon, http://dx.doi.org/10.48550/arxiv.2105.02904

Xu B-B; de Boo GG; Johnson BC; Rančić M; Bedoya AC; Morrison B; McCallum JC; Eggleton BJ; Sellars MJ; Yin C; Rogge S, 2020, Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators, http://dx.doi.org/10.48550/arxiv.2011.14792

Holmes D; Johnson BC; Chua C; Voisin B; Kocsis S; Rubanov S; Robson SG; McCallum JC; McCamey DR; Rogge S; Jamieson DN, 2020, Isotopic enrichment of silicon by high fluence $^{28}$Si$^-$ ion implantation, http://dx.doi.org/10.48550/arxiv.2009.08594

Ng KSH; Voisin B; Johnson BC; McCallum JC; Salfi J; Rogge S, 2020, Scanned single-electron probe inside a silicon electronic device, http://dx.doi.org/10.48550/arxiv.2001.10225

de Boo GG; Yin C; Rančić M; Johnson BC; McCallum JC; Sellars M; Rogge S, 2019, High resolution spectroscopy of individual erbium ions in strong magnetic fields, http://dx.doi.org/10.48550/arxiv.1912.05795

Wang Z; Marcellina E; Hamilton AR; Cullen JH; Rogge S; Salfi J; Culcer D, 2019, Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits, http://dx.doi.org/10.48550/arxiv.1911.11143

Everts J; King GGG; Lambert N; Kocsis S; Rogge S; Longdell JJ, 2019, Ultrastrong coupling between a microwave resonator and antiferromagnetic resonances of rare earth ion spins, http://dx.doi.org/10.48550/arxiv.1911.11311

Philippopoulos P; Chesi S; Salfi J; Rogge S; Coish WA, 2019, Hole-Spin-Echo Envelope Modulations, http://dx.doi.org/10.48550/arxiv.1906.11953

Bayat A; Voisin B; Buchs G; Salfi J; Rogge S; Bose S, 2019, Certification of spin-based quantum simulators, http://dx.doi.org/10.48550/arxiv.1905.01724

Kobayashi T; Salfi J; van der Heijden J; Chua C; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov NV; Becker P; Pohl H-J; Simmons MY; Rogge S, 2018, Engineering long spin coherence times of spin-orbit systems, http://dx.doi.org/10.48550/arxiv.1809.10859

Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, Single-shot single-gate RF spin readout in silicon, http://dx.doi.org/10.48550/arxiv.1809.01802

Zhang Q; Hu G; de Boo GG; Rancic M; Johnson BC; McCallum JC; Du J; Sellars MJ; Yin C; Rogge S, 2018, Single rare-earth ions as atomic-scale probes in ultra-scaled transistors, http://dx.doi.org/10.48550/arxiv.1803.01573

Rossi A; Klochan J; Timoshenko J; Hudson FE; Möttönen M; Rogge S; Dzurak AS; Kashcheyevs V; Tettamanzi GC, 2018, Gigahertz Single-Electron Pumping Mediated by Parasitic States, http://dx.doi.org/10.48550/arxiv.1803.00791

Usman M; Voisin B; Salfi J; Rogge S; Hollenberg LCL, 2017, Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon, http://dx.doi.org/10.48550/arxiv.1706.09981

Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2017, Valley filtering and spatial maps of coupling between silicon donors and quantum dots, http://dx.doi.org/10.48550/arxiv.1706.09261

Abadillo-Uriel JC; Salfi J; Hu X; Rogge S; Calderón MJ; Culcer D, 2017, Entanglement control and magic angles for acceptor qubits in Si, http://dx.doi.org/10.48550/arxiv.1706.08858

Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2017, Two-electron states of a group V donor in silicon from atomistic full configuration interaction, http://dx.doi.org/10.48550/arxiv.1703.04175

van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Lavieville R; Simmons MY; Rogge S, 2017, Spin-orbit dynamics of single acceptor atoms in silicon, http://dx.doi.org/10.48550/arxiv.1703.03538

Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies, http://dx.doi.org/10.48550/arxiv.1702.08569

Klymenko MV; Rogge S; Remacle F, 2016, Linear and planar molecules formed by coupled P donors in silicon, http://dx.doi.org/10.48550/arxiv.1611.07154

Klymenko MV; Rogge S; Remacle F, 2016, Multi-valley envelope function equations and effective potentials for P impurity in silicon, http://dx.doi.org/10.48550/arxiv.1611.05908

van der Heijden J; Tettamanzi GC; Rogge S, 2016, Dynamics of a single-atom electron pump, http://dx.doi.org/10.48550/arxiv.1607.08696

Salfi J; Tong M; Rogge S; Culcer D, 2016, Quantum Computing with Acceptor Spins in Silicon, http://dx.doi.org/10.48550/arxiv.1606.04697

Agundez R; Hill CD; Hollenberg LCL; Rogge S; Blaauboer M, 2016, Superadiabatic quantum state transfer in spin chains, http://dx.doi.org/10.48550/arxiv.1604.04885

Kobayashi T; van der Heijden J; House MG; Hile SJ; Asshoff P; Gonzalez-Zalba MF; Vinet M; Simmons MY; Rogge S, 2016, Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot, http://dx.doi.org/10.48550/arxiv.1604.04020

Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LLC, 2016, Spatial Metrology of Dopants in Silicon with Exact Lattice Site Precision, http://dx.doi.org/10.48550/arxiv.1601.02326

Rahman R; Verduijn J; Wang Y; Yin C; De Boo G; Klimeck G; Rogge S, 2015, Bulk and sub-surface donor bound excitons in silicon under electric fields, http://dx.doi.org/10.48550/arxiv.1510.00065

Hile SJ; House MG; Peretz E; Verduijn J; Widmann D; Kobayashi T; Rogge S; Simmons MY, 2015, Radio frequency reflectometry and charge sensing of a precision placed donor in silicon, http://dx.doi.org/10.48550/arxiv.1509.03315

Salfi J; Mol JA; Culcer D; Rogge S, 2015, Charge-insensitive single-atom spin-orbit qubit in silicon, http://dx.doi.org/10.48550/arxiv.1508.04259

Saraiva AL; Salfi J; Bocquel J; Voisin B; Rogge S; Capaz RB; Calderón MJ; Koiller B, 2015, Donor Wavefunctions in Si Gauged by STM Images, http://dx.doi.org/10.48550/arxiv.1508.02772

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2015, Quantum Simulation of the Hubbard Model with Dopant Atoms in Silicon, http://dx.doi.org/10.48550/arxiv.1507.06125

Purches WE; Rossi A; Zhao R; Kafanov S; Duty TL; Dzurak AS; Rogge S; Tettamanzi GC, 2015, A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures, http://dx.doi.org/10.48550/arxiv.1506.01224

Usman M; Hill CD; Rahman R; Klimeck G; Simmons MY; Rogge S; Hollenberg LCL, 2015, Strain and Electric Field Control of Hyperfine Interactions for Donor Spin Qubits in Silicon, http://dx.doi.org/10.48550/arxiv.1504.06370

Urdampilleta M; Chatterjee A; Lo CC; Kobayashi T; Mansir J; Barraud S; Betz AC; Rogge S; Gonzalez-Zalba MF; Morton JJL, 2015, Charge dynamics and spin blockade in a hybrid double quantum dot in silicon, http://dx.doi.org/10.48550/arxiv.1503.01049

Mol JA; Salfi J; Rahman R; Hsueh Y; Miwa JA; Klimeck G; Simmons MY; Rogge S, 2015, Interface-induced heavy-hole/light-hole splitting of acceptors in silicon, http://dx.doi.org/10.48550/arxiv.1501.05669

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