By Associate Professor Rajib Rahman

Book Chapters

Ahmed S; Kharche N; Rahman R; Usman M; Lee S; Ryu H; Bae H; Clark S; Haley B; Naumov M; Saied F; Korkusinski M; Kennel R; McLennan M; Boykin TB; Klimeck G, 2015, 'Multimillion Atom Simulation of Electronic and Optical Properties of Nanoscale Devices Using NEMO 3-D', in Encyclopedia of Complexity and Systems Science, Springer Berlin Heidelberg, pp. 1 - 69, http://dx.doi.org/10.1007/978-3-642-27737-5_343-2

Verduijn J; Tettamanzi GC; Roggea S, 2013, 'Orbital structure and transport characteristics of single donors', in Prati E; Shinada T (ed.), Single-Atom Nanoelectronics, Pan Stanford Publishing, Stanford, pp. 211 - 230, http://dx.doi.org/10.1201/b14792-10

Rahman R; Hollenberg LCL; Klimeck G, 2013, 'Theory and Simulations of Controlled Electronic States Bound to a Single Dopant in Silicon', in Prati E; Shinada T (ed.), SINGLE-ATOM NANOELECTRONICS, PAN STANFORD PUBLISHING PTE LTD, pp. 41 - 59

, 2012, 'Dopant Metrology in Advanced FinFETs', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 417 - 443, http://dx.doi.org/10.1201/b13063-16

, 2012, 'New Tools for the Direct Characterisation of FinFETS', in CMOS Nanoelectronics, Jenny Stanford Publishing, pp. 379 - 416, http://dx.doi.org/10.1201/b13063-15

Tettamanzi G, 2012, 'Dopant Metrology in Advanced FinFETs', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 399 - 412, http://dx.doi.org/10.4032/9789814364034

Tettamanzi G, 2012, 'New Tools for the Direct Characterisation of FinFETS', in Collaert N (ed.), CMOS NANOELECTRONICS: INNOVATIVE DEVICES, ARCHITECTURES, AND APPLICATIONS, Pan Stanford Publishing 2012, Singapore, pp. 361 - 398, http://dx.doi.org/10.4032/9789814364034

Ahmed* S; Kharche* N; Rahman* R; Usman* M; Lee* S; Ryu H; Bae H; Clark S; Haley B; Naumov M; Saied F; Korkusinski M; Kennel R; McLennan M; Boykin TB; Klimeck G, 2009, 'Multimillion Atom Simulations with Nemo3D', in Encyclopedia of Complexity and Systems Science, Springer New York, pp. 5745 - 5783, http://dx.doi.org/10.1007/978-0-387-30440-3_343

Journal articles

Cifuentes JD; Tanttu T; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Serrano S; Otter D; Dunmore D; Mai PY; Schlattner F; Feng MK; Itoh K; Abrosimov N; Pohl HJ; Thewalt M; Laucht A; Yang CH; Escott CC; Lim WH; Hudson FE; Rahman R; Dzurak AS; Saraiva A, 2024, 'Bounds to electron spin qubit variability for scalable CMOS architectures', Nature Communications, 15, http://dx.doi.org/10.1038/s41467-024-48557-x

Cifuentes JD; Tanttu T; Steinacker P; Serrano S; Hansen I; Slack-Smith JP; Gilbert W; Huang JY; Vahapoglu E; Leon RCC; Stuyck ND; Itoh K; Abrosimov N; Pohl HJ; Thewalt M; Laucht A; Yang CH; Escott CC; Hudson FE; Lim WH; Rahman R; Dzurak AS; Saraiva A, 2024, 'Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays', Physical Review B, 110, http://dx.doi.org/10.1103/PhysRevB.110.125414

Hsueh YL; Keith D; Chung Y; Gorman SK; Kranz L; Monir S; Kembrey Z; Keizer JG; Rahman R; Simmons MY, 2024, 'Engineering Spin-Orbit Interactions in Silicon Qubits at the Atomic-Scale', Advanced Materials, 36, http://dx.doi.org/10.1002/adma.202312736

Reiner J; Chung Y; Misha SH; Lehner C; Moehle C; Poulos D; Monir S; Charde KJ; Macha P; Kranz L; Thorvaldson I; Thorgrimsson B; Keith D; Hsueh YL; Rahman R; Gorman SK; Keizer JG; Simmons MY, 2024, 'High-fidelity initialization and control of electron and nuclear spins in a four-qubit register', Nature Nanotechnology, 19, pp. 605 - 611, http://dx.doi.org/10.1038/s41565-023-01596-9

Aliyar T; Ma H; Krishnan R; Singh G; Chong BQ; Wang Y; Verzhbitskiy I; Yu Wong CP; Johnson Goh KE; Shen ZX; Koh TS; Rahman R; Weber B, 2024, 'Symmetry Breaking and Spin-Orbit Coupling for Individual Vacancy-Induced In-Gap States in MoS2 Monolayers', Nano Letters, 24, pp. 2142 - 2148, http://dx.doi.org/10.1021/acs.nanolett.3c03681

Kranz L; Osika EN; Monir S; Hsueh YL; Fricke L; Hile SJ; Chung Y; Keizer JG; Rahman R; Simmons MY, 2024, 'Exploiting Atomic Control to Show When Atoms Become Molecules', Advanced Functional Materials, 34, http://dx.doi.org/10.1002/adfm.202307285

Monir S; Osika EN; Gorman SK; Thorvaldson I; Hsueh YL; Macha P; Kranz L; Reiner J; Simmons MY; Rahman R, 2024, 'Impact of measurement backaction on nuclear spin qubits in silicon', Physical Review B, 109, http://dx.doi.org/10.1103/PhysRevB.109.035157

Krishnan R; Gan BY; Hsueh YL; Huq AMSE; Kenny J; Rahman R; Koh TS; Simmons MY; Weber B, 2024, 'Measurement of Enhanced Spin-Orbit Coupling Strength for Donor-Bound Electron Spins in Silicon', Advanced Materials, http://dx.doi.org/10.1002/adma.202405916

Munia MM; Monir S; Osika EN; Simmons MY; Rahman R, 2024, 'Superexchange coupling of donor qubits in silicon', Physical Review Applied, 21, http://dx.doi.org/10.1103/PhysRevApplied.21.014038

Roknuzzaman M; Bharadwaj S; Wang Y; Khandekar C; Jiao D; Rahman R; Jacob Z, 2023, 'First-principles study of large gyrotropy in MnBi for infrared thermal photonics', Physical Review B, 108, http://dx.doi.org/10.1103/PhysRevB.108.224307

Jones MT; Monir MS; Krauth FN; Macha P; Hsueh YL; Worrall A; Keizer JG; Kranz L; Gorman SK; Chung Y; Rahman R; Simmons MY, 2023, 'Atomic Engineering of Molecular Qubits for High-Speed, High-Fidelity Single Qubit Gates', ACS Nano, 17, pp. 22601 - 22610, http://dx.doi.org/10.1021/acsnano.3c06668

Jiang Y; Zhou S; Mofarah SS; Niu R; Sun Y; Rawal A; Ma H; Xue K; Fang X; Toe CY; Chen WF; Chen YS; Cairney JM; Rahman R; Chen Z; Koshy P; Wang D; Sorrell CC, 2023, 'Efficient and stable piezo-photocatalytic splitting of water and seawater by interfacial engineering of Na0.5Bi0.5TiO3/Na0.5Bi4.5Ti4O15 self-generated heterojunctions', Nano Energy, 116, http://dx.doi.org/10.1016/j.nanoen.2023.108830

Losert MP; Eriksson MA; Joynt R; Rahman R; Scappucci G; Coppersmith SN; Friesen M, 2023, 'Practical strategies for enhancing the valley splitting in Si/SiGe quantum wells', Physical Review B, 108, http://dx.doi.org/10.1103/PhysRevB.108.125405

Krishnan R; Biswas S; Hsueh YL; Ma H; Rahman R; Weber B, 2023, 'Spin-Valley Locking for In-Gap Quantum Dots in a MoS2 Transistor', Nano Letters, 23, pp. 6171 - 6177, http://dx.doi.org/10.1021/acs.nanolett.3c01779

Sun W; Bharadwaj S; Yang LP; Hsueh YL; Wang Y; Jiao D; Rahman R; Jacob Z, 2023, 'Limits to Quantum Gate Fidelity from Near-Field Thermal and Vacuum Fluctuations', Physical Review Applied, 19, http://dx.doi.org/10.1103/PhysRevApplied.19.064038

Donnelly MB; Munia MM; Keizer JG; Chung Y; Huq AMSE; Osika EN; Hsueh YL; Rahman R; Simmons MY, 2023, 'Multi-Scale Modeling of Tunneling in Nanoscale Atomically Precise Si:P Tunnel Junctions', Advanced Functional Materials, 33, http://dx.doi.org/10.1002/adfm.202214011

Hsueh YL; Kranz L; Keith D; Monir S; Chung Y; Gorman SK; Rahman R; Simmons MY, 2023, 'Hyperfine-mediated spin relaxation in donor-atom qubits in silicon', Physical Review Research, 5, http://dx.doi.org/10.1103/PhysRevResearch.5.023043

Kranz L; Gorman SK; Thorgrimsson B; Monir S; He Y; Keith D; Charde K; Keizer JG; Rahman R; Simmons MY, 2023, 'The Use of Exchange Coupled Atom Qubits as Atomic-Scale Magnetic Field Sensors', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202201625

Kranz L; Gorman SK; Thorgrimsson B; Monir S; He Y; Keith D; Charde K; Keizer JG; Rahman R; Simmons MY, 2023, 'The Use of Exchange Coupled Atom Qubits as Atomic‐Scale Magnetic Field Sensors (Adv. Mater. 6/2023)', Advanced Materials, 35, http://dx.doi.org/10.1002/adma.202370039

Ma H; Hsueh YL; Monir S; Jiang Y; Rahman R, 2022, 'Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach', Communications Physics, 5, http://dx.doi.org/10.1038/s42005-022-00948-6

Paquelet Wuetz B; Losert MP; Koelling S; Stehouwer LEA; Zwerver AMJ; Philips SGJ; Mądzik MT; Xue X; Zheng G; Lodari M; Amitonov SV; Samkharadze N; Sammak A; Vandersypen LMK; Rahman R; Coppersmith SN; Moutanabbir O; Friesen M; Scappucci G, 2022, 'Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots', Nature Communications, 13, http://dx.doi.org/10.1038/s41467-022-35458-0

Ma H; Hsueh YL; Monir S; Jiang Y; Rahman R, 2022, 'Author Correction: Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach (Communications Physics, (2022), 5, 1, (165), 10.1038/s42005-022-00948-6)', Communications Physics, 5, http://dx.doi.org/10.1038/s42005-022-01014-x

Sarkar A; Hochstetter J; Kha A; Hu X; Simmons MY; Rahman R; Culcer D, 2022, 'Optimisation of electron spin qubits in electrically driven multi-donor quantum dots', npj Quantum Information, 8, http://dx.doi.org/10.1038/s41534-022-00646-9

McJunkin T; Harpt B; Feng Y; Losert MP; Rahman R; Dodson JP; Wolfe MA; Savage DE; Lagally MG; Coppersmith SN; Friesen M; Joynt R; Eriksson MA, 2022, 'SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits', Nature Communications, 13, http://dx.doi.org/10.1038/s41467-022-35510-z

Osika EN; Gorman SK; Monir S; Hsueh YL; Borscz M; Geng H; Thorgrimsson B; Simmons MY; Rahman R, 2022, 'Shelving and latching spin readout in atom qubits in silicon', Physical Review B, 106, http://dx.doi.org/10.1103/PhysRevB.106.075418

Voisin B; Ng KSH; Salfi J; Usman M; Wong JC; Tankasala A; Johnson BC; McCallum JC; Hutin L; Bertrand B; Vinet M; Valanoor N; Simmons MY; Rahman R; Hollenberg LCL; Rogge S, 2022, 'Valley population of donor states in highly strained silicon', Materials for Quantum Technology, 2, pp. 025002 - 025002, http://dx.doi.org/10.1088/2633-4356/ac5d1d

Krauth FN; Gorman SK; He Y; Jones MT; Macha P; Kocsis S; Chua C; Voisin B; Rogge S; Rahman R; Chung Y; Simmons MY, 2022, 'Flopping-Mode Electric Dipole Spin Resonance in Phosphorus Donor Qubits in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054006

Osika EN; Kocsis S; Hsueh YL; Monir S; Chua C; Lam H; Voisin B; Simmons MY; Rogge S; Rahman R, 2022, 'Spin-Photon Coupling for Atomic Qubit Devices in Silicon', Physical Review Applied, 17, http://dx.doi.org/10.1103/PhysRevApplied.17.054007

Tankasala A; Voisin B; Kembrey Z; Salfi J; Hsueh YL; Osika EN; Rogge S; Rahman R, 2022, 'Shallow dopant pairs in silicon: An atomistic full configuration interaction study', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.155158

Poursoti Z; Sun W; Bharadwaj S; Malac M; Iyer S; Khosravi F; Cui K; Qi L; Nazemifard N; Jagannath R; Rahman R; Jacob Z, 2022, 'Deep ultra-violet plasmonics: exploiting momentum-resolved electron energy loss spectroscopy to probe germanium', Optics Express, 30, pp. 12630 - 12638, http://dx.doi.org/10.1364/OE.447017

Gardin A; Monaghan RD; Whittaker T; Rahman R; Tettamanzi GC, 2022, 'Nonadiabatic quantum control of valley states in silicon', Physical Review B, 105, http://dx.doi.org/10.1103/PhysRevB.105.075406

Cao C; Zhong Y; Chandula Wasalathilake K; Tadé MO; Xu X; Rabiee H; Roknuzzaman M; Rahman R; Shao Z, 2022, 'A low resistance and stable lithium-garnet electrolyte interface enabled by a multifunctional anode additive for solid-state lithium batteries', Journal of Materials Chemistry A, 10, pp. 2519 - 2527, http://dx.doi.org/10.1039/d1ta07804f

Gyure MF; Kiselev AA; Ross RS; Rahman R; Van de Walle CG, 2021, 'Materials and device simulations for silicon qubit design and optimization', MRS Bulletin, 46, pp. 634 - 641, http://dx.doi.org/10.1557/s43577-021-00140-1

Voisin B; Salfi J; Rahman R; Rogge S, 2021, 'Novel characterization of dopant-based qubits', MRS Bulletin, 46, pp. 616 - 622, http://dx.doi.org/10.1557/s43577-021-00136-x

Chan KW; Sahasrabudhe H; Huang W; Wang Y; Yang HC; Veldhorst M; Hwang JCC; Mohiyaddin FA; Hudson FE; Itoh KM; Saraiva A; Morello A; Laucht A; Rahman R; Dzurak AS, 2021, 'Exchange Coupling in a Linear Chain of Three Quantum-Dot Spin Qubits in Silicon', Nano Letters, 21, pp. 1517 - 1522, http://dx.doi.org/10.1021/acs.nanolett.0c04771

Mazzola F; Chen CY; Rahman R; Zhu XG; Polley CM; Balasubramanian T; King PDC; Hofmann P; Miwa JA; Wells JW, 2020, 'The sub-band structure of atomically sharp dopant profiles in silicon', npj Quantum Materials, 5, http://dx.doi.org/10.1038/s41535-020-0237-1

Voisin B; Bocquel J; Tankasala A; Usman M; Salfi J; Rahman R; Simmons MY; Hollenberg LCL; Rogge S, 2020, 'Valley interference and spin exchange at the atomic scale in silicon', Nature Communications, 11, http://dx.doi.org/10.1038/s41467-020-19835-1

Sengupta P; Khandekar C; Van Mechelen T; Rahman R; Jacob Z, 2020, 'Electron g -factor engineering for nonreciprocal spin photonics', Physical Review B, 101, http://dx.doi.org/10.1103/PhysRevB.101.035412

Pang CS; Chen CY; Ameen T; Zhang S; Ilatikhameneh H; Rahman R; Klimeck G; Chen Z, 2019, 'WSe2 Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing', Small, 15, http://dx.doi.org/10.1002/smll.201902770

Nakamura J; Fallahi S; Sahasrabudhe H; Rahman R; Liang S; Gardner GC; Manfra MJ, 2019, 'Aharonov–Bohm interference of fractional quantum Hall edge modes', Nature Physics, 15, pp. 563 - 569, http://dx.doi.org/10.1038/s41567-019-0441-8

Wu P; Ameen T; Zhang H; Bendersky LA; Ilatikhameneh H; Klimeck G; Rahman R; Davydov AV; Appenzeller J, 2019, 'Complementary Black Phosphorus Tunneling Field-Effect Transistors', ACS Nano, 13, pp. 377 - 385, http://dx.doi.org/10.1021/acsnano.8b06441

Ameen TA; Ilatikhameneh H; Fay P; Seabaugh A; Rahman R; Klimeck G, 2019, 'Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs', IEEE Transactions on Electron Devices, 66, pp. 736 - 742, http://dx.doi.org/10.1109/TED.2018.2877753

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