By Scientia Professor Michelle Yvonne Simmons

Journal articles

Simmons M, 2020, 'Ask me anything: Michelle Simmons', PHYSICS WORLD, 33, pp. 55 - 55

Kranz L; Gorman SK; Thorgrimsson B; He Y; Keith D; Keizer JG; Simmons MY, 2020, 'Quantum Computing: Exploiting a Single‐Crystal Environment to Minimize the Charge Noise on Qubits in Silicon (Adv. Mater. 40/2020)', Advanced Materials, 32, http://dx.doi.org/10.1002/adma.202070298

Keith D; House MG; Donnelly MB; Watson TF; Weber B; Simmons MY, 2019, 'Single-Shot Spin Readout in Semiconductors Near the Shot-Noise Sensitivity Limit', Physical Review X, 9, pp. 041003, http://dx.doi.org/10.1103/PhysRevX.9.041003

He Y; Gorman SK; Keith D; Kranz L; Keizer JG; Simmons MY, 2019, 'A two-qubit gate between phosphorus donor electrons in silicon', Nature, 571, pp. 371 - 375, http://dx.doi.org/10.1038/s41586-019-1381-2

Keith D; Gorman SK; Kranz L; He Y; Keizer JG; Broome MA; Simmons MY, 2019, 'Benchmarking high fidelity single-shot readout of semiconductor qubits', New Journal of Physics, 21, pp. 063011, http://dx.doi.org/10.1088/1367-2630/ab242c

Koch M; Keizer JG; Pakkiam P; Keith D; House MG; Peretz E; Simmons MY, 2019, 'Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor', Nature Nanotechnology, 14, pp. 137 - 140, http://dx.doi.org/10.1038/s41565-018-0338-1

van der Heijden J; Kobayashi T; House MG; Salfi J; Barraud S; Laviéville R; Simmons MY; Rogge S, 2018, 'Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor', Science Advances, 4, http://dx.doi.org/10.1126/sciadv.aat9199

Weber B; Hsueh YL; Watson TF; Li R; Hamilton AR; Hollenberg LCL; Rahman R; Simmons MY, 2018, 'Spin–orbit coupling in silicon for electrons bound to donors', npj Quantum Information, 4, http://dx.doi.org/10.1038/s41534-018-0111-1

Broome MA; Gorman SK; House MG; Hile SJ; Keizer JG; Keith D; Hill CD; Watson TF; Baker WJ; Hollenberg LCL; Simmons MY, 2018, 'Two-electron spin correlations in precision placed donors in silicon', Nature Communications, 9, pp. 980, http://dx.doi.org/10.1038/s41467-018-02982-x

Pakkiam P; Timofeev AV; House MG; Hogg MR; Kobayashi T; Koch M; Rogge S; Simmons MY, 2018, 'Single-Shot Single-Gate rf Spin Readout in Silicon', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.041032

Dooley P; Simmons M, 2018, 'I'll make quantum reign supreme', NEW SCIENTIST, 240, pp. 42 - 43, http://dx.doi.org/10.1016/S0262-4079(18)31998-5

Salfi J; Voisin B; Tankasala A; Bocquel J; Usman M; Simmons MY; Hollenberg LCL; Rahman R; Rogge S, 2018, 'Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots', Physical Review X, 8, http://dx.doi.org/10.1103/PhysRevX.8.031049

Hile SJ; Fricke L; House MG; Peretz E; Chen CY; Wang Y; Broome M; Gorman SK; Keizer JG; Rahman R; Simmons MY, 2018, 'Addressable electron spin resonance using donors and donor molecules in silicon', Science Advances, 4, pp. eaaq1459, http://dx.doi.org/10.1126/sciadv.aaq1459

Pakkiam P; House MG; Koch M; Simmons MY, 2018, 'Characterization of a Scalable Donor-Based Singlet-Triplet Qubit Architecture in Silicon', Nano Letters, 18, pp. 4081 - 4085, http://dx.doi.org/10.1021/acs.nanolett.8b00006

Gorman SK; Broome MA; House MG; Hile SJ; Keizer JG; Keith D; Watson TF; Baker WJ; Simmons MY, 2018, 'Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot', Applied Physics Letters, 112, pp. 243105, http://dx.doi.org/10.1063/1.5021500

Tankasala A; Salfi J; Bocquel J; Voisin B; Usman M; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S; Rahman R, 2018, 'Two-electron states of a group-V donor in silicon from atomistic full configuration interactions', Physical Review B, 97, pp. 195301, http://dx.doi.org/10.1103/PhysRevB.97.195301

Simmons M, 2018, 'We must set the bar high and tell students we expect them to jump over it', Journal and Proceedings of the Royal Society of New South Wales, 151, pp. 14 - 21, http://dx.doi.org/10.5962/p.361814

嵩 小; Salfi J; Chua C; van der Heijden J; House MG; Culcer D; Hutchison WD; Johnson BC; McCallum JC; Riemann H; Abrosimov N; Becker P; Pohl H-J; Simmons MY; Rogge S, 2018, 'シリコン中のアクセプタ不純物スピン状態の制御による長いコヒーレンス時間の実現', , pp. 265 - 265, http://dx.doi.org/10.11316/jpsgaiyo.73.2.0_265

Gorman SK; He Y; House MG; Keizer JG; Keith D; Fricke L; Hile SJ; Broome MA; Simmons MY, 2017, 'Tunneling Statistics for Analysis of Spin-Readout Fidelity', Physical Review Applied, 8, pp. 034019, http://dx.doi.org/10.1103/PhysRevApplied.8.034019

Broome MA; Watson TF; Keith D; Gorman SK; House MG; Keizer JG; Hile SJ; Baker W; Simmons MY, 2017, 'High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon', Physical Review Letters, 119, http://dx.doi.org/10.1103/PhysRevLett.119.046802

Shamim S; Mahapatra S; Scappucci G; Klesse WM; Simmons MY; Ghosh A, 2017, 'Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P ω-layers', Scientific Reports, 7, pp. 46670, http://dx.doi.org/10.1038/srep46670

Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, 'Correction to Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies', ACS Nano, 11, pp. 3420 - 3420, http://dx.doi.org/10.1021/acsnano.6b08154

Tettamanzi GC; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY, 2017, 'Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies', ACS Nano, 11, pp. 2444 - 2451, http://dx.doi.org/10.1021/acsnano.6b06362

Watson TF; Weber B; Hsueh YL; Hollenberg LCL; Rahman R; Simmons MY, 2017, 'Atomically engineered electron spin lifetimes of 30 s in silicon', Science Advances, 3, http://dx.doi.org/10.1126/sciadv.1602811

Cooil SP; Mazzola F; Klemm HW; Peschel G; Niu YR; Zakharov AA; Simmons MY; Schmidt T; Evans DA; Miwa JA; Wells JW, 2017, 'In Situ Patterning of Ultrasharp Dopant Profiles in Silicon', ACS Nano, 11, pp. 1683 - 1688, http://dx.doi.org/10.1021/acsnano.6b07359

嵩 小; van der Heijden J; Salfi J; House MG; Johnson BC; McCallum JC; Riemann H; Abrosimov N; Becker P; Pohl H-J; Simmons MY; Rogge S, 2017, 'Spin Echo Study of Boron in 28Si at Millikelvin Temperature', , pp. 1023 - 1023, http://dx.doi.org/10.11316/jpsgaiyo.72.2.0_1023

Wang Y; Chen C-Y; Klimeck G; Simmons MY; Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques (vol 6, 31830, 2016)', SCIENTIFIC REPORTS, 6, http://dx.doi.org/10.1038/srep38120

House MG; Bartlett I; Pakkiam P; Koch M; Peretz E; Van Der Heijden J; Kobayashi T; Rogge S; Simmons MY, 2016, 'High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation', Physical Review Applied, 6, pp. 044016, http://dx.doi.org/10.1103/PhysRevApplied.6.044016

Shamim S; Weber B; Thompson DW; Simmons MY; Ghosh A, 2016, 'Ultralow-Noise Atomic-Scale Structures for Quantum Circuitry in Silicon', Nano Letters, 16, pp. 5779 - 5784, http://dx.doi.org/10.1021/acs.nanolett.6b02513

Usman M; Bocquel J; Salfi J; Voisin B; Tankasala A; Rahman R; Simmons MY; Rogge S; Hollenberg LCL, 2016, 'Spatial metrology of dopants in silicon with exact lattice site precision', Nature Nanotechnology, 11, pp. 763 - 768, http://dx.doi.org/10.1038/nnano.2016.83

Weber B; Simmons MY, 2016, 'Determining the quantum-coherent to semiclassical transition in atomic-scale quasi-one-dimensional metals', Physical Review B, 94, pp. 081412, http://dx.doi.org/10.1103/PhysRevB.94.081412

Broome MA; Gorman SK; Keizer JG; Watson TF; Hile SJ; Baker WJ; Simmons MY, 2016, 'Mapping the chemical potential landscape of a triple quantum dot', Physical Review B, 94, pp. 054314, http://dx.doi.org/10.1103/PhysRevB.94.054314

Wang Y; Chen CY; Klimeck G; Simmons MY; Rahman R, 2016, 'Characterizing Si:P quantum dot qubits with spin resonance techniques', Scientific Reports, 6, http://dx.doi.org/10.1038/srep31830

Li T; Yeoh LA; Srinivasan A; Klochan O; Ritchie DA; Simmons MY; Sushkov OP; Hamilton AR, 2016, 'Erratum: Manifestation of a non-Abelian Berry phase in a p -type semiconductor system (Physical Review B - Condensed Matter and Materials Physics (2016) 93 (205424) DOI: 10.1103/PhysRevB.93.205424)', Physical Review B, 93, http://dx.doi.org/10.1103/PhysRevB.93.239903

Li T; Yeoh LA; Srinavasan A; Klochan O; Ritchie DA; Simmons MY; Sushkov OP; Hamilton AR; Srinivasan A, 2016, 'Manifestation of a non-Abelian Berry phase in a p -type semiconductor system', Physical Review B, 93, pp. 205424, http://dx.doi.org/10.1103/PhysRevB.93.205424

Gorman SK; Broome MA; Keizer JG; Watson TF; Hile SJ; Baker WJ; Simmons MY, 2016, 'Extracting inter-dot tunnel couplings between few donor quantum dots in silicon', New Journal of Physics, 18, pp. 053041, http://dx.doi.org/10.1088/1367-2630/18/5/053041

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2016, 'Quantum simulation of the Hubbard model with dopant atoms in silicon', Nature Communications, 7, http://dx.doi.org/10.1038/ncomms11342

Kobayashi T; Van Der Heijden J; House MG; Hile SJ; Asshoff P; Gonzalez-Zalba MF; Vinet M; Simmons MY; Rogge S, 2016, 'Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system', Applied Physics Letters, 108, http://dx.doi.org/10.1063/1.4945736

Warschkow O; Curson NJ; Schofield SR; Marks NA; Wilson HF; Radny MW; Smith PV; Reusch TCG; McKenzie DR; Simmons MY, 2016, 'Reaction paths of phosphine dissociation on silicon (001)', Journal of Chemical Physics, 144, pp. 014705, http://dx.doi.org/10.1063/1.4939124

Wang Y; Tankasala A; Hollenberg LCL; Klimeck G; Simmons MY; Rahman R, 2016, 'Highly tunable exchange in donor qubits in silicon', npj Quantum Information, 2, http://dx.doi.org/10.1038/npjqi.2016.8

Büch H; Fuechsle M; Baker W; House MG; Simmons MY, 2015, 'Quantum dot spectroscopy using a single phosphorus donor', Physical Review B - Condensed Matter and Materials Physics, 92, pp. 235309, http://dx.doi.org/10.1103/PhysRevB.92.235309

Watson TF; Weber B; Büch H; Fuechsle M; Simmons MY, 2015, 'Charge sensing of a few-donor double quantum dot in silicon', Applied Physics Letters, 107, pp. 233511, http://dx.doi.org/10.1063/1.4937576

Keizer JG; Koelling S; Koenraad PM; Simmons MY, 2015, 'Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers', ACS Nano, 9, pp. 12537 - 12541, http://dx.doi.org/10.1021/acsnano.5b06299

House MG; Kobayashi T; Weber B; Hile SJ; Watson TF; Van Der Heijden J; Rogge S; Simmons MY, 2015, 'Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots', Nature Communications, 6, pp. 8848, http://dx.doi.org/10.1038/ncomms9848

Watson TF; Weber B; House MG; Büch H; Simmons MY; Buch H, 2015, 'High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D- Charge State', Physical Review Letters, 115, pp. 166806, http://dx.doi.org/10.1103/PhysRevLett.115.166806

Hill CD; Peretz E; Hile SJ; House MG; Fuechsle M; Rogge S; Simmons MY; Hollenberg LCL, 2015, 'Quantum Computing: A surface code quantum computer in silicon', Science Advances, 1, http://dx.doi.org/10.1126/sciadv.1500707

Gorman SK; Broome MA; Baker WJ; Simmons MY, 2015, 'Impact of nuclear spin dynamics on electron transport through donors', Physical Review B - Condensed Matter and Materials Physics, 92, pp. 125413, http://dx.doi.org/10.1103/PhysRevB.92.125413

Hile SJ; House MG; Peretz E; Verduijn J; Widmann D; Kobayashi T; Rogge S; Simmons MY, 2015, 'Radio frequency reflectometry and charge sensing of a precision placed donor in silicon', Applied Physics Letters, 107, http://dx.doi.org/10.1063/1.4929827

Scappucci G; Klesse WM; Yeoh LA; Carter DJ; Warschkow O; Marks NA; Jaeger DL; Capellini G; Simmons MY; Hamilton AR, 2015, 'Bottom-up assembly of metallic germanium', Scientific Reports, 5, http://dx.doi.org/10.1038/srep12948

Keizer JG; McKibbin SR; Simmons MY, 2015, 'The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers', ACS Nano, 9, pp. 7080 - 7084, http://dx.doi.org/10.1021/acsnano.5b01638

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