By Scientia Professor Michelle Yvonne Simmons

Journal articles

Mazzola F; Edmonds MT; Høydalsvik K; Carter DJ; Marks NA; Cowie BCC; Thomsen L; Miwa J; Simmons MY; Wells JW, 2014, 'Determining the electronic confinement of a subsurface metallic state', ACS Nano, 8, pp. 10223 - 10228, http://dx.doi.org/10.1021/nn5045239

Calandrini E; Ortolani M; Nucara A; Scappucci G; Klesse WM; Simmons MY; Di Gaspare L; De Seta M; Sabbagh D; Capellini G; Virgilio M; Baldassarre L, 2014, 'Determination of the free carrier concentration in atomic-layer doped germanium thin films by infrared spectroscopy', Journal of Optics (United Kingdom), 16, pp. 094010, http://dx.doi.org/10.1088/2040-8978/16/9/094010

Capellini G; Klesse WM; Mattoni G; Simmons MY; Scappucci G, 2014, 'Invited; Alternative High n-Type Doping Techniques in Germanium', ECS Meeting Abstracts, MA2014-02, pp. 1651 - 1651, http://dx.doi.org/10.1149/ma2014-02/31/1651

Oberbeck L; Reusch TCG; Hallam T; Schofield SR; Curson NJ; Simmons MY, 2014, 'Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.48846541

Oberbeck L; Reusch TCG; Hallam T; Schofield SR; Curson NJ; Simmons MY, 2014, 'Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy', Applied Physics Letters, 104, pp. 253102, http://dx.doi.org/10.1063/1.4884654

Shamim S; Mahapatra S; Scappucci G; Klesse WM; Simmons MY; Ghosh A, 2014, 'Spontaneous breaking of time-reversal symmetry in strongly interacting two-dimensional electron layers in silicon and germanium', Physical Review Letters, 112, pp. 236602, http://dx.doi.org/10.1103/PhysRevLett.112.236602

Mazzola F; Polley CM; Miwa JA; Simmons MY; Wells JW, 2014, 'Disentangling phonon and impurity interactions in δ-doped Si(001)', Applied Physics Letters, 104, pp. 173108, http://dx.doi.org/10.1063/1.4874651

Lee WCT; McKibbin SR; Thompson DL; Xue K; Scappucci G; Bishop N; Celler GK; Carroll MS; Simmons MY, 2014, 'Lithography and doping in strained Si towards atomically precise device fabrication', Nanotechnology, 25, pp. 145302, http://dx.doi.org/10.1088/0957-4484/25/14/145302

Watson TF; Weber B; Miwa JA; Mahapatra S; Heijnen RMP; Simmons MY, 2014, 'Transport in asymmetrically coupled donor-based silicon triple quantum dots', Nano Letters, 14, pp. 1830 - 1835, http://dx.doi.org/10.1021/nl4045026

McKibbin SR; Polley CM; Scappucci G; Keizer JG; Simmons MY, 2014, 'Low resistivity, super-saturation phosphorus-in-silicon monolayer doping', Applied Physics Letters, 104, pp. 123502, http://dx.doi.org/10.1063/1.4869111

House MG; Peretz E; Keizer JG; Hile SJ; Simmons MY, 2014, 'Single-charge detection by an atomic precision tunnel junction', Applied Physics Letters, 104, http://dx.doi.org/10.1063/1.4869032

Miwa JA; Warschkow O; Carter DJ; Marks NA; Mazzola F; Simmons MY; Wells JW, 2014, 'Valley splitting in a silicon quantum device platform', Nano Letters, 14, pp. 1515 - 1519, http://dx.doi.org/10.1021/nl404738j

Salfi J; Mol JA; Rahman R; Klimeck G; Simmons MY; Hollenberg LCL; Rogge S, 2014, 'Spatially resolving valley quantum interference of a donor in silicon', Nature Materials, 13, pp. 605 - 610, http://dx.doi.org/10.1038/nmat3941

Weber B; Tan YHM; Mahapatra S; Watson TF; Ryu H; Rahman R; Hollenberg LCL; Klimeck G; Simmons MY, 2014, 'Spin blockade and exchange in Coulomb-confined silicon double quantum dots', Nature Nanotechnology, 9, pp. 430 - 435, http://dx.doi.org/10.1038/nnano.2014.63

Mattoni G; Klesse WM; Capellini G; Simmons MY; Scappucci G, 2013, 'Phosphorus Molecules on Ge(001): A Playground for Controlled n-Doping of Germanium at High Densities', ACS Nano, 7, pp. 11310 - 11316, http://dx.doi.org/10.1021/nn4051634

Carter DJ; Warschkow O; Gale JD; Scappucci G; Klesse WM; Capellini G; Rohl AL; Simmons MY; McKenzie DR; Marks NA, 2013, 'Electronic structure of phosphorus and arsenic δ-doped germanium', Physical Review B - Condensed Matter and Materials Physics, 88, http://dx.doi.org/10.1103/PhysRevB.88.115203

Zwanenburg FA; Dzurak AS; Morello A; Simmons MY; Hollenberg LCL; Klimeck G; Rogge S; Coppersmith SN; Eriksson MA, 2013, 'Silicon Quantum Electronics', Reviews of Modern Physics, 85, pp. 961 - 1019, http://dx.doi.org/10.1103/RevModPhys.85.961

Klesse WM; Scappucci G; Capellini G; Hartmann J; Simmons MY, 2013, 'Atomic layer doping of strained Ge-on-insulator thin films with high electron densities', Applied Physics Letters, 102, pp. 151103, http://dx.doi.org/10.1063/1.4801981

Simmons MY; Weber B; Hollenberg L; Klimeck G, 2013, 'Atomistic Modelling of metallic nanowires in silicon', Nanoscale, 5, pp. 8666 - 8674, http://dx.doi.org/10.1039/C3NR01796F

Miwa JA; Hofmann P; Simmons MY; Wells JW, 2013, 'Direct measurement of the band structure of a buried two-dimensional electron gas', Physical Review Letters, 110, pp. 136801, http://dx.doi.org/10.1103/PhysRevLett.110.136801

Huang TY; Liang CT; Chen YF; Simmons MY; Kim G; Ritchie DA, 2013, 'Direct measurement of the spin gaps in a gated GaAs two-dimensional electron gas', Nanoscale research letters, 8, pp. 1 - 6, http://dx.doi.org/10.1186/1556-276X-8-138

McKibbin S; Scappucci G; Pok W; Simmons MY, 2013, 'Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture', Nanotechnology, 24, pp. 045303-1 - 045303-6, http://dx.doi.org/10.1088/0957-4484/24/4/045303

Simmons MY; Polley CM; Miwa JA; Scappucci G, 2013, 'Exploring the limits of N-Type ultra-shallow junction formation', ACS Nano, 7, pp. 5499 - 5505, http://dx.doi.org/10.1021/nn4016407

Simmons MY; Miwa JA; Rogge S; Mol J; Salfi J, 2013, 'Interplay between quantum confinement and dielectric mismatch for ultra-shallow dopants', Physical Review B, 87, pp. 245417, http://arxiv.org/abs/1303.2712

Polley CM; Clarke WR; Miwa JA; Simmons MY; Wells JW, 2013, 'Microscopic four-point-probe resistivity measurements of shallow, high density doping layers in silicon', Applied Physics Letters, 101, http://dx.doi.org/10.1063/1.4773485

Simmons MY; Scappucci G, 2013, 'New avenues to an old material: controlled nanoscale doping of germanium', Nanoscale, 5, pp. 2600 - 2615, http://dx.doi.org/10.1039/c3nr34258a

Buch H; Mahapatra S; Rahman R; Morello A; Simmons MY, 2013, 'Spin readout and addressability of phosphorus-donor clusters in silicon', Nature communications, 4, pp. Article number: 2017, http://dx.doi.org/10.1038/ncomms3017

Simmons MY; Xue K, 2013, 'Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication', Applied Surface Science, 265, pp. 833 - 838, http://dx.doi.org/10.1016/j.apsusc.2012.11.129

Simmons MY; Miwa JA; Mol J; Rogge S; Salfi J, 2013, 'Transport through a single donor in p-type silicon', Applied Physics Letters, 103, pp. 043106, http://dx.doi.org/10.1063/1.4816439

Fuechsle M; Miwa JA; Mahapatra S; Ryu H; Lee S; Warschkow O; Hollenberg ; Klimeck ; Simmons MY, 2012, 'A single-atom transistor', Nature Nanotechnology, 7, pp. 242 - 246, http://dx.doi.org/10.1038/nnano.2012.21

Drumm D; Hollenberg ; Simmons MY; Friesen M, 2012, 'Effective mass theory of monolayer ä doping in the high-density limit', Physical Review B, 85, pp. 155419-1 - 155419-14, http://dx.doi.org/10.1103/PhysRevB.85.155419

Weber B; Mahapatra S; Watson T; Simmons MY, 2012, 'Engineering independent electrostatic control of atomic-scale (~4 nm) silicon double quantum dots', Nano Letters, 12, pp. 4001 - 4006, http://dx.doi.org/10.1021/nl3012903

Scappucci G; Warschkow O; Capellini G; Klesse WM; Mackenzie DR; Simmons MY, 2012, 'N-type doping of germanium from phosphine: Early stages resolved at the atomic level', Physical Review Letters, 109, pp. 076101-1 - 076101-4, http://dx.doi.org/10.1103/PhysRevLett.109.076101

Weber B; Mahapatra S; Mahapatra S; Ryu H; Lee S; Fuhrer A; Reusch TC; Thompson DL; Lee WC; Klimeck ; Hollenberg ; Simmons MY, 2012, 'Ohm's law survives to the atomic scale', Science, 335, pp. 64 - 67, http://dx.doi.org/10.1126/science.1214319

Fuechsle MM; Miwa JA; Mahapatra S; Warschkow O; Hollenberg ; Simmons MY, 2012, 'Realisation of a single-atom transistor in silicon', Journal and Proceedings of Royal Society of New South Wales, 145, pp. 66 - 74, http://nsw.royalsoc.org.au/publications/journal_2000_on/J_Proc_RSNSW_Vol_145_Nos_443_444_Fuechsle.pdf

Fuechsle M; Miwa JA; Mahapatra S; Warschkow O; Hollenberg LCL; Simmons MY, 2012, 'Realisation of a single-atom transistor in silicon', Journal and proceedings of the Royal Society of New South Wales, 145, pp. 66 - 74, http://dx.doi.org/10.5962/p.361666

Scappucci G; Klesse WM; Hamilton AR; Capellini G; Jaeger DL; Bischof MR; Reidy RF; Simmons MY, 2012, 'Stacking of 2D electron gases in Ge probed at the atomic level and its correlation to low-temperature magnetotransport', Nano Letters, 12, pp. 4953 - 4959, http://dx.doi.org/10.1021/nl302558b

Scappucci G; Capellini G; Johnston B; Klesse WM; Miwa JA; Simmons MY, 2011, 'A complete fabrication route for atomic-scale, donor-based devices in single-crystal germanium', Nano Letters, 11, pp. 2272 - 2279, http://dx.doi.org/10.1021/nl200449v

Mahapatra S; Buch H; Simmons MY, 2011, 'Charge sensing of precisely positioned p donors in si', Nano Letters, 11, pp. 4376 - 4381, http://dx.doi.org/10.1021/nl2025079

Polley CM; Clarke WR; Simmons MY, 2011, 'Comparison of nickel silicide and aluminium ohmic contact metallizations for low-temperature quantum transport measurements', Nanoscale research letters, 6, pp. 538-1 - 538-5, http://dx.doi.org/10.1186/1556-276X-6-538

Scappucci G; Capellini G; Klesse WM; Simmons MY, 2011, 'Dual-temperature encapsulation of phosphorus in germanium d-layers toward ultra-shallow junctions', Journal of Crystal Growth, 316, pp. 81 - 84, http://dx.doi.org/10.1016/j.jcrysgro.2010.12.046

Lee S; Ryu H; Capbell H; Hollenberg ; Simmons MY; Klimeck , 2011, 'Electronic structure of realistically extended atomistically resolved disordered Si:P delta-doped layers', Physical Review B, 84, pp. 205309-1 - 205309-9, http://dx.doi.org/10.1103/PhysRevB.84.205309

Scappucci G; Capellini G; Klesse WM; Simmons MY, 2011, 'Phosphorus atomic layer doping of germanium by the stacking of multiple ä layers', Nanotechnology, 22, pp. 375203-1 - 375203-5, http://dx.doi.org/10.1088/0957-4484/22/37/375203

Klesse WM; Scappucci G; Capellini G; Simmons MY, 2011, 'Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices', Nanotechnology, 22, pp. 145604-1 - 145604-7, http://dx.doi.org/10.1088/0957-4484/22/14/145604

Shsmim S; Mahapatra S; Polley CM; Simmons MY; Ghosh A, 2011, 'Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P ä layers', Physical Review B, 83, pp. 233304-1 - 233304-4, http://dx.doi.org/10.1103/PhysRevB.83.233304

Ryu H; Lee S; Weber B; Mahapatra S; Simmons MY; Hollenberg LCL; Klimeck G, 2010, 'Quantum transport in ultra-scaled phosphorous-doped silicon nanowires', 2010 Silicon Nanoelectronics Workshop, SNW 2010, http://dx.doi.org/10.1109/SNW.2010.5562585

Lee WC; Scappucci G; Thompson DL; Simmons MY, 2010, 'Development of a tunable donor quantum dot in silicon', Applied Physics Letters, 96, pp. 43116-1 - 43116-3, http://dx.doi.org/10.1063/1.3299726

Lin H; Rauba J; Thygesen K; Jacobsen K; Simmons MY; Hofer W, 2010, 'First-principles modelling of scanning tunneling microscopy using non-equilibrium Green’s functions', Frontiers of Physics In China, 5, pp. 369 - 379, http://dx.doi.org/10.1007/s11467-010-0133-4

McKibbin S; Clarke WR; Fuhrer A; Simmons MY, 2010, 'Optimizing dopant activation in Si:P double δ-layers', Journal of Crystal Growth, 312, pp. 3247 - 3250, http://dx.doi.org/10.1016/j.jcrysgro.2010.08.003

Reusch TC; Fuhrer A; Fuchsle M; Weber B; Simmons MY, 2009, 'Aharonov-Bohm oscillations in a nanoscale dopant ring in silicon', Applied Physics Letters, 95, pp. 032110-1 - 032110-3, http://dx.doi.org/10.1063/1.3186031

Back to profile page