By Scientia Professor Michelle Yvonne Simmons

Journal articles

Scappucci G; Capellini G; Klesse WM; Simmons MY, 2011, 'Phosphorus atomic layer doping of germanium by the stacking of multiple ä layers', Nanotechnology, 22, pp. 375203-1 - 375203-5, http://dx.doi.org/10.1088/0957-4484/22/37/375203

Klesse WM; Scappucci G; Capellini G; Simmons MY, 2011, 'Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices', Nanotechnology, 22, pp. 145604-1 - 145604-7, http://dx.doi.org/10.1088/0957-4484/22/14/145604

Shsmim S; Mahapatra S; Polley CM; Simmons MY; Ghosh A, 2011, 'Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P ä layers', Physical Review B, 83, pp. 233304-1 - 233304-4, http://dx.doi.org/10.1103/PhysRevB.83.233304

Ryu H; Lee S; Weber B; Mahapatra S; Simmons MY; Hollenberg LCL; Klimeck G, 2010, 'Quantum transport in ultra-scaled phosphorous-doped silicon nanowires', 2010 Silicon Nanoelectronics Workshop, SNW 2010, http://dx.doi.org/10.1109/SNW.2010.5562585

Lee WC; Scappucci G; Thompson DL; Simmons MY, 2010, 'Development of a tunable donor quantum dot in silicon', Applied Physics Letters, 96, pp. 43116-1 - 43116-3, http://dx.doi.org/10.1063/1.3299726

Lin H; Rauba J; Thygesen K; Jacobsen K; Simmons MY; Hofer W, 2010, 'First-principles modelling of scanning tunneling microscopy using non-equilibrium Green’s functions', Frontiers of Physics In China, 5, pp. 369 - 379, http://dx.doi.org/10.1007/s11467-010-0133-4

McKibbin S; Clarke WR; Fuhrer A; Simmons MY, 2010, 'Optimizing dopant activation in Si:P double δ-layers', Journal of Crystal Growth, 312, pp. 3247 - 3250, http://dx.doi.org/10.1016/j.jcrysgro.2010.08.003

Reusch TC; Fuhrer A; Fuchsle M; Weber B; Simmons MY, 2009, 'Aharonov-Bohm oscillations in a nanoscale dopant ring in silicon', Applied Physics Letters, 95, pp. 032110-1 - 032110-3, http://dx.doi.org/10.1063/1.3186031

Scappucci G; Capellini G; Lee WC; Simmons MY, 2009, 'Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy', Nanotechnology, 20, pp. 495302 - 495302

Fuhrer A; Fuechsle MM; Reusch TC; Weber B; Simmons MY, 2009, 'Atomic-scale, all epitaxial in-plane gated donor quantum dot in silicon', Nano Letters, 9, pp. 707 - 710, http://dx.doi.org/10.1021/nl803196f

Goh KE; Simmons MY, 2009, 'Impact of Si growth rate on coherent electron transport in Si:P delta-doped devices', Applied Physics Letters, 95, pp. 142104-1 - 142104-3, http://dx.doi.org/10.1063/1.3245313

Scappucci G; Capellini G; Simmons MY, 2009, 'Influence of encapsulation temperature on Ge:P δ-doped layers', Physical Review - Section B - Condensed Matter, 80, pp. 233202.1 - 233202.4, http://dx.doi.org/10.1103/PhysRevB.80.233202

McKibbin S; Clarke WR; Fuhrer A; Reusch TC; Simmons MY, 2009, 'Investigating the regrowth surface of Si:P a-layers toward vertically stacked three dimensional devices', Applied Physics Letters, 95, pp. 233111-1 - 233111-3, http://dx.doi.org/10.1063/1.3269924

McKibbin S; Clarke WR; Simmons MY, 2009, 'Investigating the surface quality and confinement of Si:P δ-layers at different growth temperatures', Physica E - Low - Dimensional Systems and Nanostructures, 42, pp. 1180 - 1183, http://dx.doi.org/10.1016/j.physe.2009.11.111

Scappucci G; Capellini G; Lee WC; Simmons MY, 2009, 'Ultradense phosphorus in germanium delta-doped layers', Applied Physics Letters, 94, pp. 162106-1 - 162106-3, http://dx.doi.org/10.1063/1.3123391

Danneau RJ; Klochan O; Clarke WR; Ho L; Micolich AP; Simmons MY; Hamilton AR; Pepper M; Ritchie DA, 2008, '0.7 Structure and zero bias anomaly in ballistic hole quantum wires', Physical Review Letters, 100

Graham AC; Simmons MY; Ritchie DA; Pepper M, 2008, 'Anticrossing of spin-spin subbands in quasi-one-dimensional wires', Physical Review Letters, 100, pp. 226804 - 226807

Simmons MY; Ruess FJ; Goh KE; Pok W; Hallam T; Butcher M; Reusch TC; Scappucci G; Hamilton AR; Oberbeck L, 2008, 'Atomic-scale silicon device fabrication', INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 5, pp. 352 - 369, http://dx.doi.org/10.1504/IJNT.2008.016923

Ruess FJ; Scappucci G; Fuchsle M; Pok W; Fuhrer A; Thompson DL; Reusch TC; Simmons MY, 2008, 'Demonstration of gating action in atomically controlled Si:P nanodots defined by scanning probe microscopy', Physica E - Low - Dimensional Systems and Nanostructures, 40, pp. 1006 - 1009, http://dx.doi.org/10.1016/j.physe.2007.08.057

Ho L; Clarke WR; Micolich AP; Danneau RJ; Klochan O; Simmons MY; Hamilton AR; Pepper M; Ritchie DA, 2008, 'Effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems', Physical Review B: Condensed Matter and Materials Physics, 77

Liang CT; Li Y; Lin L; Lin P; Yang C; Tseng Y; Chen K; Cooper N; Simmons MY; Ritchie DA, 2008, 'Electron heating and huge positive magnetoresistance in an AlGaAs/GaAs high electron mobility transistor structure at high temperatures', Applied Physics Letters, 92, pp. 152117 - 152119, http://dx.doi.org/10.1063/1.2912526

Goh KE; Simmons MY; Hamilton AR, 2008, 'Electron-electron interactions in highly disordered two-dimensional systems', Physical Review - Section B - Condensed Matter, 77, pp. 235410 - 235418

Goh KE; Augarten Y; Oberbeck L; Simmons MY, 2008, 'Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal', Applied Physics Letters, 93, pp. 142105 - 142107

Bassett L; Michael C; Kataoka M; Simmons MY; Ritchie DA; Barnes CW; Ford CJ, 2008, 'Geometric suppression of single-particle energy spacings in quantum antidots', Physica E - Low - Dimensional Systems and Nanostructures, 40, pp. 1633 - 1636, http://dx.doi.org/10.1016/j.physe.2007.10.062

Clarke WR; Yasin CE; Hamilton AR; Micolich AP; Simmons MY; Muraki K; Hirayama Y; Pepper M; Ritchie DA, 2008, 'Impact of long- and short-range disorder on the metallic behaviour of two-dimensional systems', Nature Physics, 4, pp. 55 - 59

Sfigakis F; Ford CJ; Pepper M; Kataoka M; Ritchie DA; Simmons MY, 2008, 'Kondo effect from a tunable bound state within a quantum wire', Physical Review Letters, 100, pp. 26807 - 26810

Reusch TC; Goh KE; Pok W; Lo W; McKibbin S; Simmons MY, 2008, 'Morphology and electrical conduction of Si:P δ -doped layers on vicinal Si(001)', Journal of Applied Physics, 104, pp. 66104 - 66106

Ruess FJ; Micolich AP; Pok W; Goh KE; Hamilton AR; Simmons MY, 2008, 'Ohmic conduction of sub- 10 nm P-doped silicon nanowires at cryogenic temperatures', Applied Physics Letters, 92, http://dx.doi.org/10.1063/1.2840182

Hamilton AR; Klochan O; Danneau RJ; Clarke WR; Ho L; Micolich AP; Simmons MY; Pepper M; Ritchie DA; Muraki K; Hirayama Y, 2008, 'Quantum transport in one-dimensional GaAs hole systems', INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 5, pp. 318 - 330, http://dx.doi.org/10.1504/IJNT.2008.016921

Taskinen L; Starrett RP; Martin TP; Micolich AP; Hamilton AR; Simmons MY; Ritchie DA; Pepper M, 2008, 'Radio-frequency reflectometry on large gated two-dimensional systems', Review of Scientific Instruments, 79

Simmons MY, 2008, 'Scanning probe spectroscopy: Probing dopants at the atomic level', Nature Physics, 4, pp. 165 - 166

Hamilton AR; Danneau RJ; Klochan O; Clarke WR; Micolich AP; Ho L; Simmons MY; Ritchie DA; Pepper M; Muraki K; Hirayama Y, 2008, 'The 0.7 anomaly in one-dimensional hole quantum wires', Journal of Physics: Condensed Matter, 20, http://dx.doi.org/10.1088/0953-8984/20/16/164205

Clarke WR; Zhou X; Fuhrer A; Reusch TC; Simmons MY, 2008, 'The effect of surface proximity on electron transport through ultra-shallow ä-doped layers in silicon', Physica E - Low - Dimensional Systems and Nanostructures, 40, pp. 1566 - 1568, http://dx.doi.org/10.1016/j.physe.2007.09.180

Clarke WR; Zhou X; Fuhrer A; Thompson DL; Reusch TC; Simmons MY; Polley C, 2008, 'Using a four-probe scanning tunneling microscope to characterize phosphorus doped ohmic contacts for atomic scale devices in silicon', Physica E - Low - Dimensional Systems and Nanostructures, 40, pp. 2131 - 2133, http://dx.doi.org/10.1016/j.physe.2007.10.032

Graham AC; Sawkey DL; Pepper M; Simmons MY; Ritchie DA, 2007, 'Energy-level pinning and the 0.7 spin state in one dimension: GaAs quantum wires studied using finite-bias spectroscopy', Physical Review B - Condensed Matter and Materials Physics, 75, http://dx.doi.org/10.1103/PhysRevB.75.035331

Goh KE; Oberbeck L; Butcher M; Curson NJ; Ruess FJ; Simmons MY, 2007, 'Comparison of GaP and PH3 as dopant sources for STM-based device fabrication', Nanotechnology, 18, pp. 65301 - 65306

Kershaw T; Usher A; Sachrajda AS; Gupta JM; Wasilewski Z; Elliott MJ; Ritchie DA; Simmons MY, 2007, 'Decay of long-lived quantum Hall induced currents in 2D electron systems', New Journal of Physics, 9, pp. 71 - 80, http://dx.doi.org/10.1088/1367-2630/9/3/071

Reusch TC; Warschkow O; Radny M; Marks N; Curson NJ; McKenzie DR; Simmons MY; Smith PV, 2007, 'Doping and STM tip-induced changes to single dangling bonds on Si(0 0 1)', Surface Science, 601, pp. 4036 - 4040, http://dx.doi.org/10.1016/j.susc.2007.04.072

Requicha A, 2007, 'Editorial', IEEE Transactions On Nanotechnology, 6, pp. 397 - 399, http://dx.doi.org/10.1109/tnano.2007.901886

Pok W; Reusch TC; Scappucci G; Ruess FJ; Hamilton AR; Simmons MY, 2007, 'Electrical characterization of ordered SiT dopant arrays', IEEE Transactions on Nanotechnology, 6, pp. 213 - 217

Chen P; Lin LC; Liang C; Lin JH; Chen J; Simmons MY; Ritchie DA, 2007, 'Electron heating and current scaling in a GaAs two-dimensional electron system', Journal of the Korean Physical Society, 50, pp. 1662 - 1665

Ruess FJ; Pok W; Goh KE; Hamilton AR; Simmons MY, 2007, 'Electronic properties of atomically abrupt tunnel junctions in silicon', Physical Review - Section B - Condensed Matter, 75, pp. 121303 - 121306

Chen J; Hang D; Huang CF; Huang TY; Lin JH; Lo S; Hsiao J; Lin M; Simmons MY; Ritchie DA; Liang C, 2007, 'Experimental studies of low-field Landau quantization in two-dimensional electron systems in GaAs/AlGaAs heterostructures', Journal of the Korean Physical Society, 50, pp. 776 - 780

Wang C; Liang C; Jiang YA; Chen YF; Cooper N; Simmons MY; Ritchie DA, 2007, 'Huge positive magnetoresistance of GaAs/AlGaAs high electron mobility transistor structures at high temperatures', Applied Physics Letters, 90, pp. 252106 - 252108

Ruess FJ; Goh KE; Butcher M; Reusch TC; Oberbeck L; Weber B; Hamilton AR; Simmons MY, 2007, 'Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy', Nanotechnology, 18, pp. 44023 - 44028, http://dx.doi.org/10.1088/0957-4484/18/4/044023

Ruess FJ; Weber B; Goh KE; Klochan O; Hamilton AR; Simmons MY, 2007, 'One-dimensional conduction properties of highly phosphorus-doped planar nanowires patterned by scanning probe microscopy', Physical Review - Section B - Condensed Matter, 76, pp. 85403 - 85410

Ruess FJ; Pok W; Reusch TC; Butcher M; Goh KE; Oberbeck L; Scappucci G; Hamilton AR; Simmons MY, 2007, 'Realization of atomically controlled dopant devices in silicon', Small, 3, pp. 563 - 567, http://dx.doi.org/10.1002/smll.200600680

Hallam T; Reusch TC; Oberbeck L; Curson NJ; Simmons MY, 2007, 'Scanning tunneling microscope based fabrication of nano- and atomic scale dopant devices in silicon: The crucial step of hydrogen removal', Journal of Applied Physics, 101, pp. 34305 - 034312, http://dx.doi.org/10.1063/1.2433138

Radny M; Reusch TC; Warschkow O; Marks N; Wilson HF; Curson NJ; McKenzie DR; Simmons MY; Smith PV; Schofield SR, 2007, 'Single hydrogen atoms on the Si(001) surface', Physical Review - Section B - Condensed Matter, 76, pp. 155302 - 155314

Radny M; Reusch TC; Warschkow O; Marks N; Shi H; McKenzie DR; Curson NJ; Simmons MY; Smith PV; Schofield SR, 2007, 'Single P and As dopants in the Si(001) surface', Journal of Chemical Physics, 127, pp. 184706 - 184714

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